退火温度对Al掺杂ZnO薄膜结构和性能的影响

采用直流磁控溅射技术,在玻璃衬底上制备了ZnO:Al(ZAO)薄膜样品。其他参数不变,在不同的温度下对样品进行了退火处理,研究了薄膜的结构性质、电学和光学性质随退火温度的变化关系。实验结果表明:在退火温度为200℃时,ZAO薄膜具有较优的光电性能,其电阻率为9.62×10-5.cm,可见光区平均透射率为89.2%。     

原子力显微镜在ZAO薄膜表征中的应用

利用磁控溅射法在溅射功率分别为30,50,80,100W条件下制备ZAO薄膜,并通过原子力显微镜(AFM)、X射线衍射(XRD)谱对制得的薄膜样品进行表面形貌、结构特性和黏附性能进行研究。XRD结果表明,随着溅射功率的增加,ZAO薄膜呈现了明显的(002)择优取向,结晶质量获得提高。通过原子力显微镜对样品的二维、三维以及剖面线图进行分析。随着溅射功率增大,薄膜样品表面较均匀致密,晶粒生长较充分,结晶质量较高,粗糙度和黏附力均增大。     

不同掺Al3+浓度的ZnO:Al薄膜性能研究

采用溶胶-凝胶法制备ZnO:Al (ZAO)薄膜,得到了不同掺Al3+浓度的ZAO薄膜;利用X射线衍射仪分析、原子力显微镜、紫外-可见分光光度计及四探针法等仪器与方法对其性能进行了测试。通过分析比较,得出所制备的ZAO薄膜为多晶纤锌矿结构,薄膜表面平整、晶粒致密均匀;Al3+掺杂能提高其导电性能:低掺杂时,薄膜在紫外-可见光范围的透过率超过80%,并伴有蓝移现象产生;高掺杂时,其透过率无明显增加,但蓝移现象加剧,最大蓝移量达340 nm。     

升温模式对热处理TiN薄膜结构及性能的影响

为了比较不同热处理方式及工艺对TiN薄膜结构和性能的影响,在真空条件下、300~900℃范围内,对采用非平衡磁控溅射方法在单晶硅基底上沉积TiN薄膜后进行了热处理实验,考查了热处理模式（不同升温速率）和温度对薄膜结构和性能的影响．利用X射线衍射仪（XRD）对薄膜微结构进行表征,并利用扫描电镜观察了不同热处理模式下薄膜的表面形貌．同时,对不同工艺下薄膜的硬度、表面粗糙度和电阻率进行了表征．结果表明,薄膜经过热处理后,其晶体结构、择优取向、硬度、粗糙度和电阻率发生明显变化,并且随着热处理模式和温度的不同而产生较大差异．无论哪种模式,真空热处理后TiN薄膜的硬度均有所下降,其表面粗糙度亦有相似的变化趋势．两种模式下,经过450℃热处理后薄膜的硬度和粗糙度均达到最大值,与其高度择优取向的晶体结构有明显的相关性．     

梯度掺杂AZO薄膜的制备及其性能表征

采用Sol-Gel法,以不同铝离子浓度的溶胶梯度掺杂的方法制备了Al掺杂ZnO（AZO）薄膜,用XRD衍射仪和SEM扫描电镜对该薄膜进行了结构和形貌分析,并对其电学性能和光学性能进行了研究。结果表明,梯度掺杂的AZO薄膜比单一浓度掺杂5.0 at%（原子数百分比）的薄膜具有更明显的c轴择优取向,更强的本征紫外发光峰和近紫外发光峰。当薄膜的退火温度在500~650℃区间时,薄膜电阻率稳定在10-2Ω.cm,高于700℃时,薄膜电阻率明显升高。     

退火温度对MgB2超导薄膜的影响

本实验是研究退火温度对MgB2超导薄膜的影响。在多晶Al2O3衬底上,以B2H6作为硼源,化学气相沉积先驱硼薄膜,采用Mg扩散方法,在不同退火温度条件下制备了MgB2超导薄膜;还采用了测量电阻-温度曲线、X射线衍射分析和扫描电子显微镜形貌观测方法。结果表明,退火温度对MgB2薄膜的超导特性、晶体结构和相纯、表面形貌有影响。退火温度高,生成的MgB2晶粒较大,晶形好,正常态电阻也增大,杂相越少。     

氮分压对离子束溅射镍铬合金薄膜的影响

研究了氮气分压对薄膜沉积速率、表面形貌、电阻温度系数（TCR）以及电阻率的影响。利用原子力显微镜表征了薄膜的表面形貌，用Alpha—Step IQ台阶仪和四探针测量了薄膜的厚度和方块电阻。结果表明：薄膜沉积速率随氮气分压增大而减小；热处理使薄膜颗粒尺寸均匀，电阻率减小，电阻迟滞减小且TCR由负值变为正值。     

Al掺杂对ZnO薄膜结构和光学性能的影响

研究了Al掺杂对采用直流磁控溅射方法制备的ZnO薄膜结构及光学性能的影响。X射线衍射结果揭示薄膜具有良好的C轴择优取向生长特性,同时,衬底温度对它们的透射谱和荧光谱有着明显影响,所有薄膜都有大于86%的可见光透过率和陡峭的本征吸收边,但ZAO薄膜的光学透过率略低。Al掺杂导致了更宽的光学带隙,光致发光光谱显示ZnO具有较强的近带本征吸收峰和深能级发射峰,但Al掺杂使得深能级发射峰降低。随着衬底温度的升高,近带边吸收峰蓝移,与光学带隙Eg变化趋势一致。     

Influence of thickness on the properties of solution-derived LiMn<Subscript>2</Subscript>O<Subscript>4</Subscript> thin films

LiMn₂O₄ thin films of different thickness were derived from solution deposition and heat treated by rapid thermal annealing. The phase identification and surface morphology were studied by X-ray diffraction and scanning electron microscopy. The electrochemical properties of the films were examined by galvanostatic charge-discharge experiments and electrochemical impedance spectroscopy. LiMn₂O₄ thin films of different thickness derived from solution deposition and rapid thermal annealing are homogeneous and crack free with the grain size between 20 nm and 50 nm. The specific capacity of these films is between 42 and 47 μAh·cm²·μm⁻¹. The capacity decreases with the increase of discharge current density. The capacity loss per cycle increases from 0.012% to 0.16% after being cycled 50 times as the film thickness increases from 0.18 μm to 1.04 μm. The lithium diffusion coefficients of these films are in the same order of 10⁻¹¹ cm²·s⁻¹.     

溅射时间对CIGS薄膜的结构及性能影响

选择铜铟镓硒(CIGS)四元合金靶材,采用一步磁控溅射法在钠钙硅玻璃衬底上制备CIGS薄膜。重点研究了溅射时间对CIGS薄膜结构及性能的影响。采用XRD、SEM、UV-Vis及四探针测试仪对薄膜进行表征。结果表明,随着溅射时间的增加,薄膜增厚,薄膜的结晶度变好,颗粒增大尺寸约1mm,电阻率明显降低,可见光的吸收系数接近105 cm-1。CIGS吸收层的性能对改善CIGS薄膜光伏电池的光转换效率非常有利。     

Surface and electrical properties of NiCr thin films prepared by DC magnetron sputtering

Several batches of NiCr alloy thin films with different thickness were prepared in a multi-targets magnetron sputtering apparatus by changing sputtering time while keeping sputtering target power of Ni and Cr fixed. Then the as-deposited films were characterized by energy-dispersive X-Ray spectrometer （EDX）, Atomic Force Microscope （AFM） and four-point probe （FPP） to measure surface grain size, roughness and sheet resistance. The film thickness was measured by Alpha-Step IQ Profilers. The thickness dependence of surface roughness, lateral grain size and resistivity was also studied. The experimental results show that the grain size increases with film thickness and the surface roughness reaches the order of nanometer at all film thickness. The as-deposited film resistivity decreases with film thickness.     

TiO2薄膜的制备及其对304不锈钢防腐性能的研究

采用过氧钛酸溶胶凝胶法（sol-gel）制备 TiO2溶胶,并用浸渍-提拉法在304不锈钢（304SS）上制备TiO2薄膜。利用X射线衍射仪（XRD）,原子力显微镜（AFM ）和紫外-可见分光光度计（UV/Vis）表征了 TiO2晶型、薄膜表面形貌以及光吸收性能。通过极化曲线法分别研究了在暗态和光照条件下TiO2薄膜对304SS的防腐性能。结果表明：在暗态下,镀膜厚度为240．7 nm ,表面粗糙度为3．64 nm的 T iO2薄膜有最佳的机械防腐性能,腐蚀速率可从6．32×10-6 mm/a降低到5．65×10-9 mm/a;在光照条件下,膜厚294．3 nm ,处理温度为400℃,只有单一锐钛矿晶型的TiO2薄膜,对304SS的阴极保护性能较好,腐蚀电位可由-130 mV降到-319 mV。     

Eleetrodeposition and Characterization of CulnSe2 Thin Films for Solar Cells

CulnSe2 （CIS） thin films were prepared by electrodeposition from the de-ionized water solution consisting of CuCl2, InCl3, H2SeO3 and Na-citrate onto Mo/soda-lime glass （SLG） substrates. A thermal processing in Se atmosphere at 450℃ was carried out for the electrodepositied films to improve the stoichiometry. The composition and morphology of selenized CIS thin films were studied using energy dispersive spectroscopy （EDS） and scanning electron microscopy （SEM）, respectively. X-ray diffraction （XRD） studies show that the annealing in Se atmosphere at 450℃ promotes the structural formation of CIS chalcopyrite structure.     

铝对草酸法生产混合稀土氧化物的影响

本文研究了用草酸法从离子型稀土矿的浸出液中得到混合稀土氧化物时,杂质铝的影响。找到稀土、铝、草酸根等离子间的定量关系。得到随着铝含量的增加,要使稀土定量沉淀,必须加入过量草酸的规律。这是由于草酸沉淀稀土过程中 Al~(3+)·Re~(3+)和 C_2O_4~(2-)离子间形成了复杂的溶解性较大的配合物所致。     

Grain Size and Photocatalytic Activity of Nanometer TiO_2 Thin FilmsPrepared by the Sol-gel Method

Transparent anatase TiO2 nanometer thin films with photocatalytic activity were prepared via the sol-gel method on soda-lime glass. The thickness , crystalline phase, grain size, surface hydroxyl amount and so on were characterized by scanning electron microscopy (SEM) , X-ray diffraction (XRD), transmission electron microscopy ( TEM), X-ray photoelectron spectroscopy (XPS) and UV-visible spectrophotometer ( UV-VIS). The photocatalytic activity of TiO2 thin films was evaluated for the photocatalytic decolorization of aqueous methyl orange . The effects of film thickness on the crystalline phase, grain size, transmittance and photocatalytic activity of nanometer Ti02 thin films were discussed.     

氮气流量对反应磁控溅射制备TiN_x薄膜的影响

采用直流磁控溅射法,在S i基底上制备TiNx薄膜。研究了溅射沉积过程中氮气流量对TiNx薄膜生长及性能的影响。研究发现:在其它工艺参数不变的情况下,改变N2流量,薄膜的主要成分是(110)择优取向的四方相Ti2N。随着N2流量的增加,薄膜的厚度逐渐增加,薄膜粗糙度、颗粒尺寸和电阻率     

纳米VO2薄膜相变特性的红外透射表征研究

采用双离子束溅射VOx薄膜附加热处理的方式制备纳米VO2薄膜,利用X射线衍射仪和扫描电子显微镜分别对其结晶结构和表面形貌进行了测试,利用傅立叶变换红外光谱仪(FTIR)对热驱动下纳米VO2薄膜相变过程中的光学性能进行测试与分析。实验结果表明,经400℃N2热处理后,获得了由纳米颗粒组成的VO2薄膜;在所测试的红外波段,纳米VO2薄膜内颗粒发生相变的初始温度随波长的增加而升高,薄膜的相变温度点随波长增加也逐渐升高。 更多还原     

基于溶胶凝胶法ITO薄膜材料的制备与表征

基于溶胶凝胶法制备了掺铟二氧化锡（ITO）薄膜,探讨聚乙二醇（PEG）、退火温度、退火过程氧气浓度等因素对ITO薄膜性能的影响。实验结果表明：在相同实验条件下,添加PEG能够降低ITO薄膜表面粗糙度,退火温度会改变ITO薄膜的结晶度,提高含锡量和氧浓度会增加ITO薄膜的电阻率。本研究为ITO埋栅结构气敏传感器制备提供了实验基础。     

Preparation and electrical properties of BaPbO3 thin film

BaPbO3 thin films were deposited on Al2O3 substrates by sol-gel spin-coating and rapid thermal annealing. The microstructure and phase of BaPbO3 thin films were determined by X-ray diffractometry, scanning electrons microscopy and energy dispersive X-ray spectrometry. The influence of annealing temperature and annealing time on sheet resistance of the thin films was investigated. The results show that heat treatment, including annealing temperature and time, causes notable change in molar ratio of Pb to Ba, resulting in the variations of sheet resistance. The variation of electrical properties demonstrates that the surface state of the film changes from two-dimensional behavior to three-dimensional behavior with the increase of film thickness. Crack-free BaPbO3 thin films with grain size of 90 nm can be obtained by a rapid thermal annealing at 700 ℃ for 10 min. And the BaPbO3 films with a thickness of 2.5 μm has a sheet resistance of 35 Ω·-1.     

Influence of deposition pressure on properties of ZnO: Al films fabricated by RF magnetron sputtering

Transparent conductive aluminum doped zinc oxide(ZnO:Al,AZO) films were prepared on glass substrates by rf(radio frequency) magnetron sputtering from ZnO: 3wt% Al_2O_3 ceramic target. The effect of argon gas pressure(PAr) was investigated with small variations to understand the influence on the electrical, optical and structural properties of the films. Structural examinations using X-ray diffraction(XRD) and scanning electron microscopy(SEM) showed that the ZnO:Al thin films were(002) oriented. The resistivity values were measured by four-point probe with the lowest resistivity of 5.76×10~(-4) Ω?cm(sheet resistance=9.6 Ω/sq. for a thickness=600 nm) obtained at the PAr of 0.3 Pa. The transmittance was achieved from ultravioletvisible(UV-VIS) spectrophotometer, 84% higher than that in the visible region for all AZO thin films. The properties of deposited thin films showed a significant dependence on the PAr.