AlxGa1—xAs／GaAs太阳电池的结构观察和器件性能

运用不同的液相外延生长工艺，制备了两种结构的ＡｌｘＧａ１－ｘＡｓ／ＧａＡｓ太阳电池，并结合透射电子显微镜等技术分析了外延工艺对器件性能的影响。结果表明，与过冷生长技术相比，回溶工艺对衬底质量的要求不严格，且能形成有利于光生少子被收集的带隙结构。     

分子束延GaAs1—xSbx／GaAs及界面失配研究

本文以开发长波长半导体光电子材料为目的，对ＧａＡｓ１－ｘＳｂｘ／ＧａＡｓ这一大失配质结材料开展了较为深入的研究，利用国产ＭＢＥＩＩＩ型设备外延生长了全组分的ＧａＡｓ１－ｘＳｂｘ材料，化学热力学数据分析表明Ｓｂ结合到ＧａＡｓＳｂ中的速率比Ａｓ高得多，实验表明，合金组分可由Ｓｂ／Ｇａ束流比控制，也发现Ｓｂ束流的支配使用随温度升高而降低，利用ＴＥＭ和ＲＢＳ技术研究了异质结界面及外延层的晶体质量，实验表明     

多片LPE生长AlxGa1—xAs／GaAs单晶薄膜

介绍了一种新的“分离三室水平推挤式多片外延舟”，可在国产水平外延炉中实现多片单晶薄膜外延。同时，研究了适合于多片外延的各种工艺条件。用于研制的ｐ－ＡｌｘＧａ１－ｘＡｓ／ｐ－ｎ－ｎ＾＋－ＧａＡｓ太阳通电池，ＡＭ０．２５℃，１２０ｍＷ．ｃｍ＾－２的转换室１９．８％。     

MBE生长高质量GaAs／AlGaAs量子阱激光器

我们利用分子束外延方法研制了ＧａＡｓ／ＡｌＧａＡｓ缓交折射率分别限制（ＧＲＩＮ－ＳＣＨ）单量子阱和双量子阱激光器．对腔长为６００μｍ的端面不镀膜的宽接触条型Ｆ－Ｐ腔激光器，阈值电流密度（平均值）分别为２９０Ａ／ｃｍ２和２４０Ａ／ｃｍ２．腔长在１２００μｍ的双量子阱激光器的阈电流密度低达１９０Ａ／ｃｍ２．对出光面和背面分别镀以增透膜和高反膜的宽接触条型（８０μｍ）．激光器，线性输出功率高达１．８２Ｗ；出光面的斜率效率达到１．０４Ｗ／Ａ；利用湿法化学腐蚀所制备的脊形波导结构单量子阱激光器阈值电流最低可达８ｍＡ     

GaAs和AlGaAs MBE外延生长动力学研究

研究了在ＧａＡｓ（００１）衬底上外延生长ＧａＡｓ、ＡｌＧａＡｓ材料过程中反射高能电子衍射（ＲＨＥＥＤ）的各级条纹及其强度随生长过程的变化。通过对各级条纹强度振荡周期和位相的分析,应用二维成核层状生长模型解释了实验结果：生长表面形貌的周期性变化导致了ＲＨＥＥＤ各级条纹及其强度的周期性变化。     

MOCVD生长碳掺杂GaAs/AlGaAs大功率半导体激光器

利用低压金属有机金属化合物气相沉积方法,以液态ＣＣｌ,为掺杂源生长了高质量Ｃ掺杂ＧａＡｓ／ＡｌＧａＡｓ材料,并对生长机理、材料特性以及Ｃ掺杂对大功率半导体激光器的影响进行了分析。在材料研究的基础上生长了以Ｃ为Ｐ型掺杂剂的ＧａＡｓ／ＡｌＧａＡｓ／ＩｎＧａＡｓ应变量子阱半导体激光器结构,置备了高性能９８０ｎｍ大功率半导体激光器。     

GaAs／AlGaAs分子束外延量子阱材料的研究

采用进口分子束外延设备生长了ＧａＡｓ／ＡｌＧａＡｓ单量子阱和多量子阱材料。在理论分析和实验总结的基础上，对材料结构进行了优化，增加了ＧａＡｓ／ＡｌＧａＡｓ超晶格缓冲层来进行缺陷抑制，并在外延时精确地控制生长，这样获得的量子阱材料通过Ｘ射线双晶衍射和Ｃ－Ｖ测量表明：得到的材料性能良，为新型光电器件的制作和进一步的材料研究打下了基础。     

Characterizing the layer properties of AlGaAs/GaAs heteroface solar cell structures by specular spectral reflectance

A cheap and non-destructive method for characterizing wafers prior to, during, and after processing is presented. This method is based on optical reflectance measurements. Its application to AlGaAs/GaAs heteroface solar cell structures allows the determination of the thickness of both the cap and window layers, the aluminum composition (even if it is graded) of the window layer and both the thickness and composition of surface oxide (if any). The feasibility of the procedure and method here presented is demonstrated by applying it to two kinds of structures grown by MOCVD (metal organic chemical vapor deposition) and LPE (liquid phase epitaxy). The results obtained are validated experimentally by SIMS and Raman. Finally, the influence of several calculation parameters on the final result is analyzed.     

用回熔再生长LPE工艺制备高效AlGaAs／GaAs太阳电池

报道了采用欠饱和溶液的回熔—再生长液相外延（ＬＰＥ）方法制备高效ＡＩｘＧａ１－ｘＡｓ／ＧａＡｓ异质结构太阳电池的工艺。研究表明，与传统的过冷生长技术相比，回熔工艺对衬底质量的要求不严格，且能形成有利于光生少子被收集的带隙结构。在工艺优化的情况下，获得大阳电池的全面积转换效率在ＡＭ０，１ｓｕｎ的测试条件下为１８．７８％（０．７２ｃｍ２），在ＡＭ１．５，１ｓｕｎ下为２３．１７％。     

AlGaAs/GaAs superlattice solar cells

A theoretical model is performed to study the viability of the AlGaAs/GaAs superlattice solar cell (SLSC). Using the Transfer Matrix Method, the conditions for resonant tunneling are established for a particular SL geometry with variably spaced quantum wells. The effective density of states and the absorption coefficient are calculated to determinate the J–V characteristic. Radiative, non‐radiative, and interface recombination were evaluated from a modeled SLSC, and their values were compared with a multiple quantum well solar cell of the same aluminum composition. A discussion about the conditions, where SLSC performance overcomes that of a multiple quantum well solar cell, is addressed. Copyright © 2011 John Wiley & Sons, Ltd.     

GaAs的中子嬗变掺杂

文章介绍了ＧａＡｓ的中子嬗变掺杂的优点，砷化镓的ＮＴＤ原理，以及ＮＴＤ－ＧａＡｓ的退火过程，并简要介绍了国外ＧａＡｓ的ＮＴＤ研究进展和结果。     

AlxGa1—xAs Solar Cell Grown by Multi—substrate Liquid Phase Epitaxy

A novel horizontal push-pull multi-substrate epitaxy boat with three separate cells is introduced in this article, with multi-substrate LPE processing is feasible in horizontal LPE furnace. The processes of LPE Alx Ga1-xAs/GaAs solar cells are studied and the efficiency of the solar cells achieved 19.8%(AM0,25℃,120mW/cm^2).     

Si薄膜低温液相外延

选用Ａｕ／Ｂｉ合金熔体在低温下实现了硅薄膜的外延生长，外延温度４００℃～５００℃，采用Ｓｎ源内的饱和硅来保护衬底的方法，以防止升温饱和过程中衬底的氧化，运用扫描电镜，Ｃ－Ｖ法及俄歇能谱对外延膜形貌和结深附近载流子浓度进行了观察和测量。     

Transient-mode liquid phase epitaxy of GaAs on InP and AlGaAs on GaP

Transient-mode liquid epitaxy (TMLE), where a cooler substrate is inserted into a hotter solution, has been used to grow layers on substrates which are mismatched ± 3,7%, Both AlGaAs on GaP and GaAs on InP have been sucessfully deposited. An improved surface morphology is observed in both cases when this technique is employed and is shown by IR transmission and x-ray topography to be caused by a very fine uniformly dispersed initial nucleation, A model for growth in this mode which assumes a diffusion-limited process is derived and is seen to agree well with GaAs experimental data originally presented by Deitch. The work was supported by the Energy Research and Development Administration, Washington DC, under contract E(04-3)-1250.     

Al_xGa_(1-x)As/GaAs Solar Cell Grown by Multi-substrate Liquid Phase Epitaxy

A novel horizontal push-pull multi-substrate epitaxy boat with three separate cells is introduced in this article, with which multi-substrate LPE processing is feasible in horizontal LPE furnace. The processes of LPE Al_xGa_(1-x))As/ GaAs solar cells are studied and the efficiency of the solar cells achieved 19.8% (AMO, 25℃, 120 mW/cm~2).     

A revised ideal model for AlGaAs/GaAs quantum well solar cells

Quantum well solar cells (QWSCs) are heterostructure devices intended to achieve higher efficiencies than conventional cells. This paper extends a previous model for QWSC current-voltage characteristics by revising the equations for the absorbed flux and by introducing expressions to calculate radiative recombination coefficients and well effective densities-of-states. This revised model is in agreement with previous experimental results for AlGaAs/GaAs. Since the revised model incorporates detailed balance calculations, its predictions are consistent with the efficiency restrictions of this theory. The revised model, however, does predict efficiency enhancements for QWSCs in some configurations if non-radiative recombination is dominant, even in such a poor QWSC material as AlGaAs/GaAs.     

高亮度GaAlAs／GaAs双异质结红色发光二极管

报道了高亮度ＧａＡｌＡｓ／ＧａＡｓ双异质结红色发光二极管的制作和实验结果。该器件在２０ｍＡ工作电流下，最大发光强度约５００ｍｃｄ。