Synthesis of single-crystal GaN nanowires on Si(111) substrate by ammonification technology

GaN nanowires have been synthesized on Si(111) substrate through ammoniating Ga₂O₃/BN films under flowing ammonia atmosphere at the temperature of 900 °C. The as-synthesized GaN nanowires were characterized by X-ray diffraction (XRD), selected-area electron diffraction (SAED), Fourier transform infrared (FTIR) spectroscopy, scanning electron microscope (SEM) and transmission electron microscope (TEM). The results demonstrated that the nanowires are hexagonal wurtzite GaN and possess a smooth surface with diameters ranging from 40 to 100 nm and lengths up to several tens of micrometers. The growth mechanism of crystalline GaN nanowires is discussed briefly.     

Synthesis of GaN nanorods by ammoniating Ga2O3 films on TiO2 (rutile) layer deposited on Si(111) substrates

GaN nanorods have been synthesized by ammoniating Ga₂O₃ films on a TiO₂ middle layer deposited on Si(111) substrates. The products were characterized by X-Ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transformed infrared spectra (FTIR) and high-resolution transmission electron microscopy (HRTEM). The XRD analysis indicates that the crystallization of GaN film fabricated on TiO₂ middle layer is rather excellent. The FTIR, SEM and HRTEM demonstrate that these nanorods are hexagonal GaN and possess a rough morphology with a diameter ranging from 200 nm to 500 nm and a length less than 10 μm, the growth mechanism of crystalline GaN nanorods is discussed briefly.     

Synthesis of GaN nanowires through Ga2O3 films' reaction with ammonia

GaN nanowires were synthesized by ammoniating Ga₂O₃ films on Ti layers deposited on Si (111) substrates at 950 °C. The products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transformed infrared spectroscopy (FTIR) and high-resolution transmission electron microscopy (HRTEM). The XRD, FTIR and HRTEM studies showed that these nanowires were hexagonal GaN single crystals. SEM observation demonstrated that these GaN nanorods with diameters ranging from 50 nm to 100 nm and lengths up to several micrometers intervene with each other on the substrate.     

Fabrication and structure properties of GaN nanowires by ammoniating Ga2O3 films

The GaN nanowires were successfully synthesized on Si(111) substrates by ammoniating the Ga₂O₃/ZnO films at 900 °C. The structure and morphology of the as-prepared GaN nanowires were studied by X-ray diffraction (XRD), Fourier transform infrared spectrum (FTIR), scanning electron microscopy (SEM) and field-emission transmission electron microscopy (FETEM). The results show that the single-crystal GaN nanowires have a hexagonal wurtzite structure with lengths of about several micrometers and diameters ranging from 30 nm to 120 nm, which are conducive to the application of nanodevices. Finally, the growth mechanism is also briefly discussed.     

Gallium nitride nanowires doped with magnesium

GaN nanowires doped with Mg have been synthesized on Si (111) substrate through ammoniating Ga₂O₃ films doped with Mg under flowing ammonia atmosphere. The Mg-doped GaN nanowires were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL). The results demonstrate that the nanowires were single crystalline with hexagonal wurzite structure. The diameters of the nanowires ranged 20-30 nm and the lengths were about hundreds of micrometers. The intense PL peak at 359 nm showed a blueshift from the bulk band gap emission, attributed to Burstein-Moss effect. The growth mechanism of the crystalline GaN nanowires is discussed briefly.     

Influence of reaction time on growth of GaN nanowires fabricated by CVD method

GaN nanowires have been fabricated successfully on Si (111) substrates coated with NiCl₂ thin films by chemical vapor deposition method using Ga₂O₃ as raw material. The growth of GaN nanowires was investigated as a function of reaction times so as to study the influence of different durations on the components, microstructure, morphologies and optical properties of GaN samples in particular by X-ray diffraction, FT-IR spectrophotometer, scanning electron microscope, and photoluminescence. The results show that the samples after reaction are single crystal GaN with hexagonal wurtzite structure and high-quality crystalline after reaction at 1,100 °C for 60 min, which have good optical properties as revealed by PL spectra. Reaction time greatly influences the growth of GaN nanowires, that is, with the increase in reaction time, the crystalline quality of GaN nanowires is improved accordingly. The growth of the GaN nanowires follows the vapor–liquid-solid mechanism and Ni plays an important role as catalyst, which forms nucleation point in the growth of GaN nanowires.     

Initial growth behaviors of GaN layers overgrown by HVPE on one-dimensional nanostructures

We developed a novel technique for obtaining a residual-strain-free GaN layer by the hydride vapor phase epitaxy (HVPE) method using one-dimensional nanostructures. The GaN layer was grown on a Si(1 1 1) substrate with a conventional AlN film and one-dimensional GaN nanostructures. The nanostructures were grown for 2 h with a HCl:NH₃ gas flow ratio of 1:50. The growth rate of nanoneedles at 600 °C and nanorods at 650 °C were 2.553 and 2.193 μm/h, respectively. The overgrown GaN layer was grown at 1050 °C for 5 and 10 min. We obtained a GaN layer of 1.833 μm thickness and c = 5.1849 Å. The morphology, crystalline structure, and optical characteristics of the GaN layer were examined by field emission scanning electron microscopy, X-ray diffraction, and photoluminescence.     

Low temperature growth of SnO2 nanowires by electron beam evaporation and their application in UV light detection

For the first time, high quality tin oxide (SnO₂) nanowires have been synthesized at a low substrate temperature of 450 °C via vapor–liquid–solid mechanism using an electron beam evaporation technique. The grown nanowires have shown length of 2–4 μm and diameter of 20–60 nm. High resolution transmission electron microscope studies on the grown nanowires have shown the single crystalline nature of the SnO₂ nanowires. We investigated the effect of growth temperature and oxygen partial pressure on SnO₂ nanowires growth. Variation of substrate temperature at a constant oxygen partial pressure of 4 × 10⁻⁴ mbar suggested that a temperature equal to or greater than 450 °C was the best condition for phase pure SnO₂ nanowires growth. The SnO₂ nanowires grown on a SiO₂ substrate were subjected to UV photo detection. The responsivity and quantum efficiency of SnO₂ NWs photo detector (at 10V applied bias) was 12 A/W and 45, respectively, for 12 μW/cm² UV lamp (330 nm) intensity on the photo detector..     

GaN nanowires: CVD synthesis and properties

The growth of GaN nanowires from Ga and NH₃ sources in the flow of Ar carrier gas using a chemical vapor deposition (CVD) system was systematically studied. The substrates used were Si(111) and Si(100). Fabricated nanowires were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX). We investigated the influence of growth temperature, catalyst used, Ga amount, and the ratio of Ar and NH₃ flow rates on the morphology and properties of GaN nanowires. We found that the best results were obtained for a growth temperature of 950 °C. Optimal catalysts were Au and metallic Ni, while the use of nickel nitrate was found to lead to formation of SiO_x nanowire bunches in addition to GaN nanowires. For the optimal temperature and catalyst used, the influence of the Ga to N ratio on the nanowire growth was studied. It was found that different types of nanostructures are observed in relatively Ga-rich and in relatively N-rich conditions. Growth mechanisms of different types of nanowires, including the stacked-cone nanowires and the microscale structures formed by lateral growth under N-rich conditions, are discussed.     

Large-scale SnO2 nanowires synthesized by direct sublimation method and their enhanced dielectric responses

In this paper, we developed a direct sublimation method to synthesize large-scale rutile SnO₂ nanowires on 6H–SiC substrate using SnO₂ nanoparticles as starting material. The structural properties of these straight nanowires were investigated in detail. These nanowires grow along [121], and the average diameter and length of these nanowires are 80 nm and 5 μm, respectively. In addition, the dielectric measurement indicates that the dielectric response of the SnO₂ nanowires is significantly enhanced in the low-frequency range. It is suggested that both the rotation direction polarization (RDP) and the space charge polarization (SCP) process should be responsible for the enhancement of ε_r of these SnO₂ nanowires.     

A simple method for fabricating single-crystalline Fe nanowires

This work reports a simple and environmental friendly approach for the fabrication of Fe nanowires under normal pressure and low temperature in the absence of any inorganic or organic templates, substrate, surfactant, external field or magnetic field. This approach involved the production of Fe(OH)₃/NaCl by mechanically milling a mixture of Fe(OH)₃ and NaCl, and the reduction of Fe(OH)₃/NaCl to Fe nanowires. The as-prepared product (Fe/NaCl) and the Fe nanowires obtained by dissolving the NaCl from Fe/NaCl were characterized using transmission electron microscopy, X-ray diffraction and vibrating sample magnetometer. The results showed that the Fe nanowires are about 10-100 nm in diameter and 8-16 μm in length and their saturation magnetization (M_s) and coercivity (H_c) values are 145 emu/g and 206 Oe, respectively.     

Field emission of Co nanowires in polycarbonate template

The Co nanowire arrays were synthesized by electrodeposition in polycarbonate template (PC) with 4 μm thickness. Electron field emission properties of cobalt nanowires were studied for wires with different aspect ratios, R ranged between 10 and 60, while the diameter of wires was fixed about 50 nm. The field emission properties of the samples showed low turn on electric field (E_to) with values varying between 2.9 and 11.3 V/μm showing a minimum value for R = 20 (E_to < 3 V/μm). On the other hand, the enhancement factor shows a peak for nanowires length about 1 μm. Field emission data using the Fowler-Nordhiem theory showed nearly straight-line nature confirming cold field emission of electrons. The fabricated field emitter arrays of cobalt nanowires in the PC templates opens the possibility of fabricating flexible flat panel displays.     

GaN nanowires grown on silicon substrates engraved using stainless-steel micro-tip

GaN nanostructures have been synthesized on silicon substrates using chemical vapor deposition. Prior to growth silicon substrates were engraved using stainless-steel micro-tips. Straight as well as twisted nanowires were observed along the engraved lines/regions. Straight nanowires were few tens of microns in length and the twisted ones were few microns in length with diameter variation between 30 nm and 100 nm. The electron microscopy analysis indicates that the nanowires were grown parallel to the c-axis and possible growth mechanism is described. Raman scattering indicates good quality of nanowires exhibiting intense E₂(high) mode and A₁(LO) mode and a huge red-shift in the mode position indicates nano-size effects. Such engraved substrates without any explicit catalyst can provide site controlled growth of nanowires and this methodology is extendable for growing nanowires of related materials.     

Study of using aqueous NH3 to synthesize GaN nanowires on Si(1 1 1) by thermal chemical vapor deposition

High-quality GaN nanowires (NWs) and zigzag-shaped NWs were grown on catalyst-free Si(1 1 1) substrate by thermal chemical vapor deposition (TCVD). Gallium (Ga) metal and aqueous NH₃ solution are used as a source of materials. Ga vapor was directly reacts with gaseous NH₃ under controlled nitrogen flow at 1050 °C. Scanning electron microscopy (SEM) images showed that the morphology of GaN displayed various densities of NWs and zigzag NWs depending on the gas flow rate, and increased nitrogen flow rate caused density reduction. The GaN NWs exhibited clear X-ray diffraction analysis (XRD) peaks that corresponded to GaN with hexagonal wurtzite structures. The photoluminescence spectra showed that the ultraviolet band emission of GaN NWs had a strong near band-edge emission (NBE) at 361–367 nm. Yellow band emissions were observed at low and high flow rates due to nitrogen and Ga vacancies, respectively. Moderate N₂ flow resulted in a strong NBE emission and a high optical quality of the NWs. This study shows the possibility of low-cost synthesis of GaN nanostructures on Si wafers using aqueous NH₃ solution.     

Large-scale synthesis of single-crystal alpha manganese sesquioxide nanowires via solid-state reaction

Smooth single-crystal α-Mn₂O₃ nanowires have been fabricated using a one-step solid-state reaction method. X-ray diffraction patterns show that the nanowires have pure phase of α-Mn₂O₃. Transmission electron microscopy was employed to investigate the size and morphology of the products. The α-Mn₂O₃ nanowires exhibit mean diameter of 50 nm and length of 10 μm. Selected-area electron diffraction pattern demonstrates the single-crystal structure of the α-Mn₂O₃ nanowires, which are in good agreement with the X-ray diffraction results. The processes of the reactions and the phase transitions were also studied by using a simultaneous thermal gravimetric/differential thermal analyzer. It is found that the concentration of the precursor MnCO₃ is a crucial factor in the formation of the nanowires. This work provides the probability of the industrialization of fabricating smooth single-crystal α-Mn₂O₃ nanowires.     

Synthesis of GaN nanorods by ammoniating Ga2O3 films on In2O3 layer deposited on Si (111) substrates

GaN nanorods were synthesized by ammoniating Ga₂O₃/In₂O₃ thin films deposited on Si (111) with magnetron sputtering. X-ray diffraction, Scanning electronic microscope and high-resolution TEM results show that they are GaN single crystals, the sizes of which vary from 2 to 7 μm in length and 200 to 300 nm in diameter. In₂O₃ middle layer plays an important role in the GaN nanorod growth.     

Synthesis of ZnGa2O4 nanowires with β-Ga2O3 templates and its photoluminescence performance

This paper focuses on a new but much simple approach in synthesizing cubic spinel-structure ZnGa₂O₄ nanowires through the reaction of β-Ga₂O₃ nanowires templates and ZnO vapor at high temperature. Characterization has been achieved by means of X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The length of as-synthesized ZnGa₂O₄ nanowires is scaled over 10 μm and the diameter is 80 nm respectively. It has been noticed that the concentration of ZnO vapor plays an important role for synthesizing ZnGa₂O₄ nanowires. And with different concentration of ZnO vapor, the very nanowires could be compounded in the form of β-Ga₂O₃:ZnGa₂O₄, ZnGa₂O₄ and ZnO:ZnGa₂O₄. The corresponding photoluminescence emission bands centered at 460 nm, 405 nm and 381 nm have also been observed.     

Synthesis of polypyrrole coated manganese nanowires and their application in hydrogen peroxide detection

This study focuses on the synthesis and application of polypyrrole coated manganese nanowires (Mn/PPy NWs) as an enzyme-less sensor for the detection of hydrogen peroxide (H₂O₂). The X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) results confirm a core–shell structure with the Mn nanowires encapsulated by the PPy. An electrochemical sensor based on the Mn/PPy NWs for amperometric determination of H₂O₂ is prepared. The electrochemical behaviour of H₂O₂ is investigated by cyclic voltammetry with the use of modified glassy carbon electrode (GCE) with Mn/PPy NWs film. The modified glassy carbon electrode (GCE) with Mn/PPy NWs shows enhanced amperometric response for the detection of H₂O₂. This is due to the high available surface area of Mn/PPy NWs which can provide a suitable area for the reaction of H₂O₂. The detection limit and limit of quantification (S/N = 3) for two linear segments (low and high concentration of H₂O₂) are estimated to be 2.12 μmol L⁻¹, 7.07 μmol L⁻¹ and 22.3 μmol L⁻¹, 74.5 μmol L⁻¹, respectively. In addition, the sensitivity for these two linear segments is 0.4762 μA mM⁻¹ and 0.0452 μA mM⁻¹ respectively.     

Synthesies and properties of Tb-doped GaN nanowires

The synthesis of Tb-doped GaN nanowires on Si (111) substrates through ammoniating Ga₂O₃ films doped with Tb was investigated. X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscope, high-resolution transmission electron microscopy and photoluminescence were used to characterize the composition, structure, morphology and optical properties of the products. The results show that the as-synthesized GaN nanowires doped with 3 at % Tb are of single-crystalline hexagonal wurtzite structure. The nanowires have diameters ranging from 30 to 50 nm and the lengths up to tens of micrometers. An f-f intra-atomic transition of rare earth at 545 nm corresponding to ⁵ D ₄–⁷ F ₅ of the Tb³⁺ and other two peaks related with doping are observed in PL spectrum, confirming the doping of Tb into GaN. The growth mechanism of GaN nanowires was discussed briefly.     

Enhanced field emission from the ZnO nanowires by hydrogen gas exposure

ZnO nanowires (ZNWs) were synthesized on Co-coated Si wafer via a carbon thermal reduction vapor transport method. Scanning electron microscopy, X-ray diffraction and transmission electron microscopy investigations show that these ZNWs present a high-quality single-crystalline hexagonal structure. Field emission (FE) characteristics of the ZNWs film were measured. A low turn-on voltage for driving a current density of 0.1 μA/cm² is about 3.9 V/μm. The field enhancement factor was determined to be ∼ 1180 for ZNWs film. Exposure of H₂ during FE causes a permanent increase in the FE current and a decrease in the turn-on field. Also, the field enhancement factor γ was finally increased from 1180 ± 20 to 1510 ± 20 after FE saturation.