Co-precipitation technique for the preparation of nanocrystalline ferroelectric SrBi2Ta2O9

A simple co-precipitation technique had been successfully applied for the preparation of pure ultrafine single phase SrBi₂Ta₂O₉. Ammonium hydroxide was used to precipitate Sr²⁺, Bi³⁺ and Ta⁵⁺ cations simultaneously. No pyrochlore phase was found while heating powder at 800 °C and pure SrBi₂Ta₂O₉ phase was found to be formed by X-ray diffraction. Particle size and morphology was studied by scanning electron spectroscopy. Ferroelectric hysteresis loop parameters of these samples were also studied.     

Sintering and dielectric properties of Sr(Bi2Ta2)0.95Ti0.2O9 ceramics

In this study, TiO₂ is used to substitute the Bi₂O₃ and Ta₂O₅ sites of the SrBi₂Ta₂O₉ ceramics to form Sr(Bi₂Ta₂)_0.95Ti_0.2O₉ composition. From the X-ray patterns, the 2θ values shift to higher values as the sintering temperatures increase. At lower sintering temperatures of 1200–1250 °C, the Sr(Bi₂Ta₂)_0.95Ti_0.2O₉ ceramics reveal a two-phase structure, bar-typed grains and disk-typed grains coexist; when 1300 °C is used as the sintering temperature, only the bar-typed grains are revealed. The sintering temperatures also have large influences on the maximum dielectric constants and the Curie temperatures of Sr(Bi₂Ta₂)_0.95Ti_0.2O₉ ceramics.     

Synthesis and characterization of nanocrystalline ferroelectric Sr0.8Bi2.2Ta2O9 by conventional and microwave sintering: A comparative study

In recent years mechanical activation technique has been utilized to synthesize the nanocrystalline form of compounds resulting in enhancement in the properties. Also, microwave sintering is being preferred over conventional sintering due to rapid processing and uniform temperature distribution throughout the specimen. In the present work, nanocrystalline non-stoichiometric strontium bismuth tantalate (SBT) of the composition Sr_0.8Bi_2.2Ta₂O₉ ferroelectric ceramics were synthesized by microwave sintering process (with sintering temperatures of 1000 °C and 1100 °C) and conventional solid state reaction process (with sintering temperature of 1100 °C) with an objective of comparing the properties of the synthesized specimens by the two processes. X-ray diffraction analysis shows the formation of single phase layered perovskite structure formation by both the processes. Scanning electron microscopy reveals the formation of a finer granular microstructure in the specimen synthesized by microwave sintering compared to that in the specimen prepared by conventional sintering. The specimen prepared by microwave sintering process exhibits improved electrical properties with higher dielectric constant, higher piezoelectric and pyroelectric coefficients and lower dielectric loss.     

Influence of V2O5 additions to Ba(Mg1/3Ta2/3)O3 ceramics on sintering behavior and microwave dielectric properties

The microstructures and the microwave dielectric properties of barium magnesium tantalate ceramics prepared by conventional mixed oxide route have been investigated. The prepared Ba(Mg_1/3Ta_2/3)O₃ exhibited a mixture of cubic perovskite and a hexagonal superstructure with Mg and Ta showing 1:2 order in the B-site. It is found that low level doping of V₂O₅ (up to 0.5 wt.%) can significantly improve densification of the specimens and their microwave dielectric properties. The density of doped Ba(Mg_1/3Ta_2/3)O₃ ceramics can be increased beyond 95% of its theoretical value by 1500 °C-sintering, which is caused by the liquid-phase effect of V₂O₅ addition. The detected second phase Ta₂O₅ was mainly the result of V⁵⁺ substitution in the ceramics. Dielectric constant (ε_r) and temperature coefficient of resonant frequency (τ_f) were not significantly affected, while the unloaded quality factors Q were effectively promoted by V₂O₅ addition due to the increase in B-site ordering. The ε_r value of 24.1, Q×f value of 149,000 (at 10 GHz) and τ_f value of 7.2 ppm/°C were obtained for Ba(Mg_1/3Ta_2/3)O₃ ceramics with 0.25 wt.% V₂O₅ addition sintered at 1500 °C for 3 h.     

Influence of CuO addition to BaSm2Ti4O12 microwave ceramics on sintering behavior and dielectric properties

Microwave dielectric ceramics of tungsten–bronze-type BaSm₂Ti₄O₁₂ were prepared by doping CuO (up to 2 wt.%) as the liquid-phase sintering aid. The effects of CuO additive on the densification, micro structure and dielectric properties were investigated. Due to the liquid-phase effect, the sintering temperature of BaSm₂Ti₄O₁₂ ceramics with 1 wt.% CuO addition can be effectively reduced to 1160 °C, about 200 °C lower than that of pure BaSm₂Ti₄O₁₂ ceramics, while good microwave dielectric properties of ɛ_r = 75.8, Q*f = 4914.6 GHz and τ_f = −7.65 ppm/°C were still achieved.     

Low-temperature firing and microwave dielectric properties of MgTiO3 ceramics with Bi2O3–V2O5

The effects of Bi₂O₃–V₂O₅ additive on the microstructures, the phase formation and the microwave dielectric properties of MgTiO₃ Ceramics were investigated. The Bi₂O₃–V₂O₅ addition lowered the sintering temperature of MgTiO₃ ceramics effectively from 1400 to 875 °C due to the liquid-phase effect. The microwave dielectric properties were found to strongly correlate with the amount of Bi₂O₃–V₂O₅ addition. The saturated dielectric constant decreased and the maximum Qf values increased with the increasing V₂O₅ content, which is attributed to the variation of the second phase including Bi₂Ti₂O₇, Bi₄V_1.5Ti_0.5O_10.85 and BiVO₄. At 875 °C, MgTiO₃ ceramics with 5.0 mol% Bi₂O₃–7 mol% V₂O₅ gave excellent microwave dielectric properties: ε_r = 20.6,Qf = 10420 GHz (6.3 GHz).     

Crystallization of nanosized Aurivillius phase Bi2W2O9 from amorphous precursor

Nanoparticles of bismuth layered Aurivillius phase, Bi₂W₂O₉, have been synthesized by annealing of precursor prepared by high energy milling in ball mill. The obtained powders have been investigated using the XRD, TEM, SEM, diffuse reflectivity, Raman and infrared spectroscopy. The results show that mechanochemical activation allows obtaining Bi₂W₂O₉ at much lower temperatures than those required in a conventional solid state reaction or synthesis through a complex organic precursor. As a result, material with smaller grain size can be obtained. Therefore this synthesis method is the best route to enhance photocatalytic activity of Bi₂W₂O₉. Our results also show that milling time has great impact on the crystallization mechanism. Bi₂W₂O₉ crystallizes easily already at 600 °C from precursor milled by 8 h. However, prolong milling time results in stabilization of an unknown phase or phases, which crystallize below 700 °C, and transform into the well-known Bi₂W₂O₉ phase after annealing at 750 °C.     

Fabrication and properties of mechanically alloyed and Ni activated sintered W matrix composites reinforced with Y2O3 and TiB2 particles

Microstructural and physical properties of W–1 wt.% Ni matrix composites reinforced with Y₂O₃ and TiB₂ particles produced via mechanical alloying and sintering at 1400 °C for 1 h under Ar, H₂ gas flowing conditions were investigated. XRD patterns of the sintered samples revealed the presence of W, Ni and TiB₂ phases, whereas W₂B and NiTi phases were detected in the samples containing 4 wt.% and 5 wt.% TiB₂. Relative density value of W–1 wt.% Ni sample was measured as 97%, which decreased to 95.4% with the addition of 0.5 wt.% Y₂O₃. Relative density values varied between 95.4% and 97.3% for the sintered samples containing varying TiB₂ between 1 wt.% and 5 wt.%. Average W grain size in the sintered samples decreased with the addition of Y₂O₃ and TiB₂ particles, from 5.38 μm in the W–1 wt.% Ni sample to 0.8 μm in the W–1 wt.% Ni sample containing 0.5 wt.% Y₂O₃ and 5 wt.% TiB₂ particles. Vickers microhardness values varied between 4.53 GPa and 8.54 GPa. The sample with the composition of W–1 wt.% Ni/0.5 wt.% Y₂O₃ and 5 wt.% TiB₂ had a relative density value of about 95.7% and hardness value of 8.54 GPa after sintering at 1400 °C for 1 h.     

Gd2O3 doped 0.82Bi0.5Na0.5TiO3–0.18Bi0.5K0.5TiO3 lead-free piezoelectric ceramics

Gd₂O₃ (0–0.8 wt.%)-doped 0.82Bi_0.5Na_0.5TiO₃–0.18Bi_0.5K_0.5TiO₃ (BNKT18) lead-free piezoelectric ceramics were synthesized by a conventional solid-state process. The effects of Gd₂O₃ on the microstructure, the dielectric, ferroelectric and piezoelectric properties were investigated. X-ray diffraction (XRD) data shows that Gd₂O₃ in an amount of 0.2–0.8 wt.% can diffuse into the lattice of BNKT18 ceramics and form a pure perovskite phase. Scanning electron microscope (SEM) images indicate that the grain size of BNKT18 ceramics decreases with the increase of Gd₂O₃ content; in addition, all the modified ceramics have a clear grain boundary and a uniformly distributed grain size. At room temperature, the ferroelectric and piezoelectric properties of the BNKT18 ceramics have been improved with the addition of Gd₂O₃, and the BNKT18 ceramics doped with 0.4 wt.% Gd₂O₃ have the highest piezoelectric constant (d₃₃ = 137 pC/N), highest relative dielectric constant (ε_r = 1023) and lower dissipation factor (tan δ = 0.044) at a frequency of 10 kHz. The BNKT18 ceramics doped with 0.2 wt.% Gd₂O₃ have the highest planar coupling factor (k_p = 0.2463).     

Sintering temperature dependence of microwave dielectric properties in Mg4(TaNb1−xVx)O9 compounds

The relationship between the sintering temperature and the microwave dielectric properties of Mg₄(TaNb_1−xV_x)O₉ (MTNV) compounds were investigated in this study in order to reduce the sintering temperature of the compound. A small amount of V₂O₅ doping lowered the sintering temperature of the MTNV compounds. The variations in the dielectric constant and the quality factor of the MTNV compounds depended on the amount of V₂O₅ doping and the sintering temperature; a small amount of V₂O₅ doping was effective in allowing low sintering temperatures without a detrimental effect on these dielectric properties. As a result, a dielectric constant of approximately 12 and a quality factor of approximately 200,000 GHz were obtained when the MTNV compounds with x = 0.2 was sintered at 1200 °C. The temperature coefficient of resonant frequency of the MTNV compound with x = 0.025 slightly changed from −63 to −73 ppm/ °C with an increased sintering temperature because of the presence of a secondary phase.     

Preparation, sintering, and microstructures of strontium barium bismuth tantalate layered perovskite ceramics

The solid solutions of Ba-doped SrBi₂Ta₂O₉ layered perovskite ceramic powders have been successfully prepared via a two-step process using BiTaO₄ as a precursor. The lattice constants of the solid solutions monotonically increase with increasing barium-ion content. The sinterability of (Sr_1–xBa_x)Bi₂Ta₂O₉ powders is significantly improved by increasing the barium-ion content. When the specimens with high barium-ion contents are sintered at 1100°C, they thermally decompose to form rod-like grains and the matrix expands, leading to a lower density. The addition of barium ions to SrBi₂Ta₂O₉ also results in significant variation in the morphology of the sintered specimens and the occurrence of c-axis preferred orientation which is ascribed to the anisotropic growth of plate-like grains. The precise control of the barium-ion content as well as the sintering conditions is critical for obtaining densified barium-ion doped SrBi₂Ta₂O₉ ceramics with a pure, layered perovskite structure.     

Lithium solubility limit in ZnGa2O4:Bi0.0013+,Li+ phosphor

The lithium solubility limit, photoluminescence (PL) and photoluminescence excitation (PLE) properties of lithium ion co-activated ZnGa₂O₄:Bi³⁺,Li⁺ phosphor have been investigated. A LiGaO₂ second phase began to appear from 3 mol% Li⁺ ion co-activated ZnGa₂O₄:Bi³⁺,Li⁺ phosphor. The enhanced brightness of blue (λ_ex = 254 nm) and white (λ_ex = 315 nm) colors of bismuth ions doped ZnGa₂O₄:Bi³⁺,Li⁺ phosphor was assigned to the formation of LiGaO₂. Bi³⁺ activated lithium zinc gallate phosphor showed a more enhanced PLE peak around 315 nm than that of lithium zinc gallate phosphor when λ_em = 520 nm. Thus, we observed that the PL intensity of ZnGa₂O₄:Bi³⁺,Li⁺ phosphor with λ_em = 520 nm was much greater than that of ZnGa₂O₄:Li⁺ phosphor. Also, ZnGa₂O₄:Bi³⁺,Li⁺ phosphor exhibited a shorter decay time than that of ZnGa₂O₄:Li⁺ phosphor by about a factor of about 2.     

Effect of annealing conditions and concentration of oxygen vacancies on vanadium doped SrBi2Ta2O9

This paper studied the annealing effects on the dielectric characteristics of vanadium doped SrBi₂Ta₂O₉ (SBT). SBT was synthesized at 1000 °C and vanadium doped SBT at 900 °C by solid-state reaction. Crystallization structure and phase purity of the prepared ceramic samples was observed by X-ray diffraction analysis. XRD analysis indicated a single layered perovskite structure without any secondary phases up to 15% of vanadium doping in SBT ceramics. Detailed dielectric study on vanadium doped SBT ceramics indicated that post-sinter annealing enhances the peak dielectric permittivity, which is attributed to the increased homogeneity in the system at atomic scale upon annealing. Annealing for larger time interval suppresses the permittivity growth beyond transition temperature which gives a direct evidence for the existence of lower valance state of vanadium (V⁺⁴) in as-sintered SBTV ceramics and also the permittivity growth is related to the oxygen ions or oxygen vacancies created during sintering. UV–Vis spectroscopy was also performed to confirm the lower valance state of the vanadium ions in the ceramics.     

Structure and electrical properties of Er2O3 doped 0.82Bi0.5Na0.5TiO3–0.18Bi0.5K0.5TiO3 lead-free piezoelectric ceramics

Er₂O₃ (0–0.8 wt.%)-doped 0.82Bi_0.5Na_0.5TiO₃–0.18Bi_0.5K_0.5TiO₃ (BNKT18) lead-free piezoelectric ceramics were synthesized by a conventional solid-state reaction method. The effects of Er₂O₃ on the microstructure and electrical properties were investigated. X-ray diffraction (XRD) data shows that Er₂O₃ in an amount of 0.2–0.8 wt.% can diffuse into the lattice of the BNKT18 ceramics and form the pure perovskite phase. Scanning electron microscope (SEM) images indicate that the grain sizes of BNKT18 ceramics decrease with the increase of Er₂O₃ content; in addition, the modified ceramics have the clear grain boundary and a uniformly distributed grain size. At room temperature, the electrical properties of the BNKT18 ceramics have been improved with the addition of Er₂O₃, and the BNKT18 ceramics doped with 0.6 wt.% Er₂O₃ have the highest piezoelectric constant (d₃₃ = 138 pC/N), the highest planar coupling factor (k_p = 0.2382), the highest remnant polarization (P_r = 25.2 μC/cm²), the higher relative dielectric constant (ε_r = 936) and lower dissipation factor (tanδ = 0.047) at a frequency of 10 kHz. Moreover, the T_m and T_d of the samples increase with the addition of Er₂O₃.     

Effects of WO3 addition on the structure and electrical properties of Pb3O4 modified PZT–PFW–PMN piezoelectric ceramics

The ceramics were prepared successfully by Pb₃O₄ and WO₃ additions to 0.90Pb(Zr,Ti)O₃–0.03Pb(Fe_2/3W_1/3)O₃–0.07Pb(Mn_1/3Nb_2/3)O₃ (0.90PZT–0.03PFW–0.07PMN). Effects of the additions on the structure, bulk density and electrical properties of ceramics were investigated. The results revealed that the proper additions of WO₃ with 2.0 wt.% Pb₃O₄ excess could form liquid phase that promoted the densification of the ceramics. The fracture mode changed from transgranular to intergranular as increasing WO₃ with 2.0 wt.% Pb₃O₄ excess. The piezoelectric and dielectric properties were also promoted by excess of Pb₃O₄ and WO₃ additions. The optimized electrical properties were obtained at excess of 2.0 wt.% Pb₃O₄ and 0.15 wt.% WO₃. The parameters were as follows: d₃₃ = 351 pC/N, K_p = 0.64, Q_m = 1882, ɛ_r = 1798, tan δ = 0.0052, P_r = 19.94 μC/cm² and E_c = 11.98 kV/cm, which shows high K_p, Q_m, d₃₃ and low tan δ can be obtained simultaneously by adding WO₃ addition to Pb₃O₄ modified PZT–PFW–PMN system.     

Low-temperature sintering and microwave dielectric properties of CaTi1−x(Fe0.5Nb0.5)xO3 ceramics with B2O3 addition

CaTi_1−x(Fe_0.5Nb_0.5)_xO₃ (0 ≤ x ≤ 1) dielectrics were synthesized via the solid state reaction route and structure analysis was performed together with the dielectric characterization. The substitution of Ti⁴⁺ by Fe³⁺/Nb⁵⁺ and developed phase were studied by X-ray diffraction. The dielectric constant and temperature coefficient of resonant frequency decrease rapidly with an increase of x. The influence of 1–5 wt.% B₂O₃ as a sintering additive investigated at CaTi_0.5(Fe_0.5Nb_0.5)_0.5O₃ solid solutions. The dielectric properties were found to strongly depend on the sintering conditions and contents of B₂O₃ additions. ɛ_r = 52.3, Q × f_o = 2930 GHz and T_f = 13 ppm/°C were obtained for CaTi_0.5(Fe_0.5Nb_0.5)_0.5O₃ specimen 3 wt.% B₂O₃ sintered at 900 °C for 2 h.     

Preparation,phase structure and microwave dielectric properties of CoLi2/3Ti4/3O4 ceramic

A new low loss microwave dielectric ceramic with composition of CoLi_2/3Ti_4/3O₄ was prepared by a conventional solid-state reaction method. The compound has a cubic spinel structure [Fd-3m (227)] similar to MgFe₂O₄ with lattice parameters of a = 8.3939 Å, V = 591.42 Å³, Z = 8 and ρ = 4.30 g/cm³. This ceramic has a low sintering temperature (～1050 °C) and good microwave dielectric properties with relative permittivity of 21.4, Q × f value of 35,000 GHz and τ_f value of ?22 ppm/°C. Furthermore, the addition of BaCu(B₂O₅) (BCB) can effectively lower the sintering temperature from 1050 °C to 900 °C and does not induce much degradation of the microwave dielectric properties. Compatibility with Ag electrode indicates that the BCB added CoLi_2/3Ti_4/3O₄ ceramics are good candidates for LTCC applications.     

Facile preparation of heterostructured Bi2O3/Bi2MoO6 hollow microspheres with enhanced visible-light-driven photocatalytic and antimicrobial activity

Hierarchical β-Bi₂O₃/Bi₂MoO₆ heterostructured flower-like microspheres assembled from nanoplates with different β-Bi₂O₃ loadings (0–26.5 mol%) were synthesized through a one-step template-free solvothermal route. Under visible-light illumination (λ > 420 nm), over 99% of rhodamine B was degraded within 90 min on the 21.9 mol% of β-Bi₂O₃ loading Bi₂O₃/Bi₂MoO₆ microspheres. The remarkable enhancement of photocatalytic activity of the hierarchical Bi₂O₃/Bi₂MoO₆ micro/nanostructures can be attributed to the effective separation of the photoinduced charge carriers at the interfaces and in the semiconductors. The electrons (e⁻) are the main active species in aqueous solution under visible-light irradiation. The Bi₂O₃/Bi₂MoO₆ also displays visible-light photocatalytic activity for the destruction of E. coli. In addition, the β-Bi₂O₃ in the hierarchical Bi₂O₃/Bi₂MoO₆ microspheres is very stable and the composite can be easily recycled by a simple filtration step, thus the second pollution can be effectively avoided. A possible photocatalytic mechanism was proposed based on the experimental results.     

Synthesis and characteristics of nature-superlattice-structured Bi3TiNbO9–Bi4Ti3O12 ferroelectric thin films by MOD

Natural-superlattice-structured ferroelectric thin films, Bi₃TiNbO₉–Bi₄Ti₃O₁₂ (BTN–BIT), have been synthesized on Pt/Ti/SiO₂/Si by metal organic decomposition (MOD) using BTN–BIT (1 mol:1 mol) solution. BTN–BIT films show natural-superlattice peaks below 2θ = 20° in X-ray diffraction patterns, which indicate that the BTN–BIT films annealed at 700–800 °C in O₂ ambient are consisted of iteration of two unit cells of Bi₃TiNbO₉ and one unit cell of Bi₄Ti₃O₁₂. As the annealing temperature increases from 600 to 750 °C, uniform and crack-free films, better crystallinity and ferroelectric properties can be obtained, but the pyrochlore phase in BTN–BIT films annealed over 800 °C would impair the ferroelectric properties. With the increase of O₂ flow rate from 0.5 to 1.5 L/min, both remanent polarization P_r and coercive electric field E_C increase, which are mainly attributed to reduction of the vacanvies of Bi and oxide ions in the films. Natural-superlattice-structured BTN–BIT thin films having 2–1 superlattice annealed at 750 °C in O₂ ambient with a flow rate of 1.5 L/min exhibit superior ferroelectric properties of P_r = 23.5 μC/cm² and E_C = 135 kV/cm.     

Effect of V2O5 additive to 0.4SrTiO3–0.6La(Mg0.5Ti0.5)O3 ceramics on sintering behavior and microwave dielectric properties

The effect of V₂O₅ addition on the microwave dielectric properties and the microstructures of 0.4SrTiO₃–0.6La(Mg_0.5Ti_0.5)O₃ ceramics sintered for 5 h at different sintering temperature were investigated systematically. It was found that the sintering temperature was effectively lowered about 200 °C by increasing V₂O₅ addition content. The grain sizes, bulk density as well as microwave dielectric properties were greatly dependent on sintering temperature and V₂O₅ content. The 4ST–6LMT ceramics with 0.25% V₂O₅ sintered at 1400 °C for 5 h in air exhibited optimum microwave dielectric properties of ɛ_r = 50.7, Q × f = 15049.6 GHz, T_f = −1.7 ppm/°C.