High dielectric constant and low-loss dielectric ceramics of Ba5LnZnNb9O30 (Ln = La,Nd and Sm)

Polycrystalline Ba₅LnZnNb₉O₃₀ (Ln = La, Nd and Sm) ceramics were prepared as single-phase materials through conventional solid-state ceramics route. The structure was characterized by X-ray diffraction methods and scanning electron microscopy (SEM) and the dielectric properties were measured from − 120 °C to 150 °C. All three compounds are paraelectric phases adopting the filled tetragonal tungsten–bronze (TB) structure at room temperature, and the Curie temperature (at 1 MHz) were − 60, − 25 and − 5 °C for Ba₅LaZnNb₉O₃₀, Ba₅NdZnNb₉O₃₀, and Ba₅SmZnNb₉O₃₀ respectively. At 1 MHz their dielectric constant (ε_r) varies from 258 to 310, dielectric loss (tanδ) from 0.0033 to 0.0068, and the temperature coefficients of the dielectric constant (τ_ε) from − 1220 to − 1390 ppm °C^− 1.     

Preparation,characterization and dielectric properties of Ba3−xSrxM4Ti4O21 (M = Nb,Ta and 0 ≤ x ≤ 3) ceramics

Ba_3−xSr_xM₄Ti₄O₂₁ (M = Nb, Ta and 0 ≤ x ≤ 3) ceramics have been prepared through solid state ceramic route. The structure and microstructure of the compositions have been studied using powder X-ray diffraction and Scanning Electron Microscopic studies. In the present study, both Ba₃Nb₄Ti₄O₂₁ and Ba₃Ta₄Ti₄O₂₁ are obtained as single phase compositions whereas strontium rich compositions exhibit multiphase in nature. Energy dispersive X-ray analysis has been performed to identify the nature of additional phases present in the strontium rich compositions. The dielectric constant, dielectric loss and temperature variation of dielectric constant of the well sintered ceramic specimens have been studied in the low frequency region (< 13 MHz) using an impedance analyzer. The present study reveals that high dielectric compositions can be realized by Sr-substitution in the BaO–TiO₂–Nb₂O₅/Ta₂O₅ ternary systems.     

Effect of Sb5+ substitution on the dielectric properties of Ag(Nb0.8Ta0.2)O3 ceramics

Sb₂O₅ were selected to substitute (Nb_0.8Ta_0.2)₂O₅ and the effects of substitution on the dielectric properties of Ag(Nb_0.8Ta_0.2)O₃ ceramics were studied. The dielectric properties of Ag(Nb_0.8Ta_0.2)_1−xSb_xO₃ ceramics were found to be improved by the substitution of Sb for Nb/Ta. The ε value of Ag(Nb_0.8Ta_0.2)_1−xSb_xO₃ ceramics sintered at 1060 °C increased from 430 to 825 with x increasing from 0 to 0.08, the tanδ value decreased sharply from 0.0085 to 0.0023 (at 1 MHz) with x increasing from 0 to 0.04, and then kept to a lower tanδ value ∼ 0.0024 with x to 0.08. The TCC values decreased from + 1450 ppm/°C for x = 0 to − 38.5 ppm/°C for x = 0.08. The Ag(Nb_0.8Ta_0.2)_1−xSb_xO₃ ceramics with x = 0.08 sintered at 1050 °C exhibited the optimum dielectric properties of ε ∼ 854, tanδ ∼ 0.0024 (1 MHz), and TCC ∼ 36.86 ppm/°C.     

Synthesis and microwave dielectric properties of Ba4Ti3P2O15 ceramics

Present work introduces a new kind of microwave dielectric ceramic, Ba₄Ti₃P₂O₁₅. Ba₄Ti₃P₂O₁₅ ceramic can be prepared by solid state reaction method and be well densified after being sintered at above 1175 °C for 4 h in air. All the XRD patterns can be fully indexed as single-phase structure. The best microwave dielectric properties can be obtained in ceramic sintered at 1200 °C for 4 h with permittivity about 20.7, Q × f about 42,210 GHz and TCF about 37 ppm °C^?1. Measurements of the microwave dielectric properties of Ba₄Ti₃P₂O₁₅ ceramic revealed the existence of a maximum in the temperature dependence of the dielectric loss because of the defect dipoles relaxation.     

Effect of bottom electrodes on dielectric relaxation and defect analysis of (Ba0.47Sr0.53)TiO3 thin film capacitors

The dielectric relaxation and defect analysis of (Ba_0.47Sr_0.53)TiO₃ (BST) thin films deposited on various bottom electrodes, such as Pt, Ir, IrO₂/Ir, Ru, RuO₂/Ru before and after annealing in O₂ ambient was investigated. Through the measurement of dielectric dispersion as a function of frequency (100 Hz ≤ f ≤ 10 MHz) and temperature (27°C ≤ T ≤ 150°C), we studied the trapping dielectric relaxation and defect quantity of the films, and proposed an equivalent circuit on the basis of the capacitance, admittance and impedance spectra. A shallow trap level located at 0.005–0.01 eV below the conduction band was observed from the admittance spectral studies in the temperature range of 27–150°C. The origin of dielectric relaxation and defect concentration was attributed to the existence of the grain boundary defect, interface defect and shallow trap level in the films. An equivalent circuit was established which can well explain the AC response and identify the contribution of defects on electrical properties of BST thin film. From the viewpoint of trapping phenomena and dielectric relaxation analyses, we propose Ir as the optimum material for bottom electrode to withstand the post-annealing treatment.     

Effect of B2O3 and CuO additives on the sintering temperature and microwave dielectric properties of Ba(Mg1/3Nb2/3)O3 ceramics

B₂O₃ added Ba(Mg_1/3Nb_2/3)O₃ (BBMN) ceramics cannot be sintered below 930 °C. However, when CuO was added to them, they were sintered even at 850 °C. The amount of the Ba₂B₂O₅ second phase, which was formed in the BBMN ceramics decreased with the addition of CuO. Therefore, the CuO additive is considered to react with the B₂O₃ inhibiting the reaction between B₂O₃ and BaO. A dense microstructure without pores developed with the addition of a small amount of CuO. The bulk density, dielectric constant (ɛ_r) and Q-value increased with the addition of CuO, but decreased when a large amount of CuO was added. Excellent microwave dielectric properties were obtained for the Ba(Mg_1/3Nb_2/3)O₃ + 2.0 mol% B₂O₃ + 10.0 mol% CuO ceramic sintered at 875 °C for 2 h, with values Q_xf = 21 500 GHz, ɛ_r = 31 and temperature coefficient of resonance frequency (τ_f) = 21.3 ppm/°C.     

Effect of ZrO2 doping on the tunable and dielectric properties of Ba0.55Sr0.45TiO3/MgO composites for microwave tunable application

Undoped and ZrO₂ doped (0.5, 1.0, 2.0, 3.0 wt.%) Ba_0.55Sr_0.45TiO₃/MgO composites were prepared by traditional ceramic processing. The ZrO₂ doping effect on the structural, surface morphological, tunability and dielectric properties were systemically investigated. The result shows that the tunability of Ba_0.55Sr_0.45TiO₃/MgO composites was improved by using ZrO₂ dopant. The Ba_0.55Sr_0.45TiO₃/MgO composite with 1.0 wt.% ZrO₂ dopant exhibits high tunability (17% at 2.5 kV/mm), low dielectric constant (200) and a low microwave loss (0.005, 2.7 GHz), which are suitable for microwave tunable application.     

Microwave dielectric properties of Ba3La2Ti2Nb2−xTaxO15 ceramics

High dielectric constant and low loss ceramics in the system Ba₃La₂Ti₂Nb_2−xTa_xO₁₅ (x = 0–2) have been prepared by conventional solid-state ceramic route. Ba₃La₂Ti₂Nb_2−xTa_xO₁₅ solid solutions adopted A₅B₄O₁₅ cation-deficient hexagonal perovskite structure for all compositions. The materials were characterized at microwave frequencies. They show a linear variation of dielectric properties with the value of x. Their dielectric constant varies from 49.8 to 45.1, quality factor Q_u × f from 22,000 to 31,040 GHz and temperature variation of resonant frequency from + 6.9 to − 13.4 ppm/°C as the value of x increases. These low loss ceramics might be used for dielectric resonator (DR) applications.     

Synthesis of the giant dielectric constant oxide CaCu3Ti4O12 via ethylenediaminetetraacetic acid precursor

CaCu₃Ti₄O₁₂ powders were prepared via EDTA route and single-phase CaCu₃Ti₄O₁₂ was obtained at 800 °C for 2 h. DTA/TG and XRD were used to characterize the precursor and derived oxide powders. The dielectric properties of CaCu₃Ti₄O₁₂ ceramics were presented. Increasing sintering temperature leads to the increase in dielectric constant. CaCu₃Ti₄O₁₂ ceramics sintered at 1090 °C for 3 h exhibited giant dielectric constant of up to 2.1 × 10⁵ at room temperature and 100 Hz, which is significantly higher than those obtained from other chemical methods.     

Preparation,characterization and dielectric properties of Ba5LnZnTa9O30 (Ln=La,Sm) ceramics

Ba₅LnZnTa₉O₃₀ (Ln=La, Sm) ceramics were prepared by high temperature solid-state reaction route. The samples were characterized by X-ray diffraction, scanning electron microscopy (SEM), and differential scanning calorimetry (DSC) methods. They belong to paraelectric phase of filled tetragonal TB structure at room temperature with unit cell a=12.5909(4) Å, c=3.9622(2) Å for Ba₅LaZnTa₉O₃₀; and a=12.5777(4) Å, c=3.9544(2) Å for Ba₅SmZnTa₉O₃₀. At 1 MHz, Ba₅LaZnTa₉O₃₀ has high dielectric constants of 89 with low dielectric loss 0.0067, and temperature coefficients of the dielectric constant (τ_ε) −811 ppm °C⁻¹; Ba₅LaZnTa₉O₃₀ has dielectric constants of 74 with low dielectric loss 0.0035, and τ_ε −474 ppm °C⁻¹.     

Effect of V2O5 additive to 0.4SrTiO3–0.6La(Mg0.5Ti0.5)O3 ceramics on sintering behavior and microwave dielectric properties

The effect of V₂O₅ addition on the microwave dielectric properties and the microstructures of 0.4SrTiO₃–0.6La(Mg_0.5Ti_0.5)O₃ ceramics sintered for 5 h at different sintering temperature were investigated systematically. It was found that the sintering temperature was effectively lowered about 200 °C by increasing V₂O₅ addition content. The grain sizes, bulk density as well as microwave dielectric properties were greatly dependent on sintering temperature and V₂O₅ content. The 4ST–6LMT ceramics with 0.25% V₂O₅ sintered at 1400 °C for 5 h in air exhibited optimum microwave dielectric properties of ɛ_r = 50.7, Q × f = 15049.6 GHz, T_f = −1.7 ppm/°C.     

Structure and microwave dielectric characteristics of lithium-excess Ca0.6Nd0.8/3TiO3/(Li0.5Nd0.5)TiO3 ceramics

Compositions based on (1−x)Ca_0.6Nd_8/3TiO₃−x(Li_1/2Nd_1/2)TiO₃ + yLi (CNLNTx + yLi, x = 0.30–0.60, y = 0–0.05), suitable for microwave applications have been developed by systematically adding excess lithium in order to tune the microwave dielectric properties and lower sintering temperature. Addition of 0.03 excess-Li simultaneously reduced the sintering temperature and improved the relative density of sintered CNLNTx ceramics. The excess Li addition can compensate the evaporation of Li during sintering process and decrease the secondary phase content. The CNLNTx (x = 0.45) ceramics with 0.03 Li excess sintered at 1190 °C have single phase orthorhombic perovskite structure, together with the optimum combination of microwave dielectric properties of ɛ_r = 129, Q × f = 3600 GHz, τ_f = 38 ppm/°C. Obviously, excess-Li addition can efficiently decrease the sintering temperature and improve the microwave dielectric properties. The high permittivity and relatively low sintering temperatures of lithium-excess Ca_0.6Nd_0.8/3TiO₃/(Li_0.5Nd_0.5)TiO₃ ceramics are ideal for the development of low cost ultra-small dielectric loaded antenna.     

Microstructures and microwave dielectric properties of Ba4LiNb3O12–BaWO4 composite ceramics

Composite ceramics of (1 ? x)Ba₄LiNb₃O₁₂–xBaWO₄ (x = 0.36–0.69) had been synthesized by co-firing the mixtures of Ba₄LiNb₃O₁₂ and BaWO₄ powders. The structures and microwave dielectric properties of the ceramics were studied by XRD, SEM, and TEM. These ceramics consisted of hexagonal Ba₄LiNb₃O₁₂ and tetragonal BaWO₄. The two phases co-existed well in the ceramics, and there was not obvious reaction at interfacial areas among grains. These ceramics had low sintering temperatures and excellent microwave dielectric properties, especially the small temperature coefficients of resonant frequency (τ_f) and high quality factor (Q × f) values. For composition at x = 0.69, the ceramic sintered at 1070 °C had Q × f value of 75,500 GHz and τ_f value of +8.7 ppm/°C.     

Low-firing of BiSbO4 microwave dielectric ceramic with V2O5–CuO addition

Effects of 1.0 wt.% V₂O₅–CuO mixture addition on the sintering behavior, phase composition and microwave dielectric properties of BiSbO₄ ceramics have been investigated. BiSbO₄ ceramics can be well densified below temperature about 930 °C with 1.0 wt.% V₂O₅–CuO mixtures addition with different ratios of CuO to V₂O₅. The formation of BiVO₄ phase and substitution of Cu²⁺ can explain the decrease of sintering temperature. Dense BiSbO₄ ceramics sintered at 930 °C for 2 h exhibited good microwave dielectric properties with permittivity between 19 and 20.5, Qf values between 19,000 and 40,000 GHz and temperature coefficient of resonant frequency shifting between ?71.5 ppm °C^?1 and ?77.8 ppm °C^?1. BiSbO₄ ceramics could be a candidate for microwave application and low temperature co-fired ceramics technology.     

Microwave dielectric properties of Sr2Ce2Ti5O16 ceramics

Sr₂Ce₂Ti₅O₁₆ dielectric ceramics were prepared by conventional solid-state ceramic route. The structure and microstructure of the ceramics were investigated by X-ray diffraction and scanning electron microscopic methods. The Sr₂Ce₂Ti₅O₁₆ has a psuedocubic structure. It has ɛ_r of 113, unloaded quality factor (Q_u × f) of 8000 GHz and temperature coefficient of resonant frequency of 306 ppm/°C. The effects of various dopants on the structure, microstructure and microwave dielectric properties of the material have been investigated. It is found that addition of small amount of dopants such as PbO, Al₂O₃, Nd₂O₃, MoO₃, CeO₂, La₂O₃, Fe₂O₃ and NiO improve the microwave dielectric properties of Sr₂Ce₂Ti₅O₁₆.     

Effect of La2O3 doping on the tunable and dielectric properties of BST/MgO composite for microwave tunable application

Undoped and La₂O₃doped (0.5, 1.0, 2.0, 3.0 wt.%) Ba_0.55Sr_0.45TiO₃/MgO composites were prepared by traditional ceramic processing and their structural, surface morphological, tunable properties and their dielectric properties at low frequency and microwave frequency were systemically examined. The result shows that La₂O₃ dopant has a strong effect on the average grain size. The La₂O₃ doped samples have lower temperature coefficient of capacitance than the undoped. The 0.5 wt.% La₂O₃ doped sample has a little higher tunability than the undoped and the tunability of other doping concentration samples is lower as compared to the undoped. The addition of La₂O₃ decreases the dielectric constant and increases quality factor (Q × f) at microwave frequency. The 0.5 wt.% La₂O₃ doped samples have the best properties among these samples and have a higher tunability, lower dielectric constant and lower dielectric loss tangent at microwave frequency and these properties are very beneficial to the development of the tunable devices application.     

Gd2O3 doped 0.82Bi0.5Na0.5TiO3–0.18Bi0.5K0.5TiO3 lead-free piezoelectric ceramics

Gd₂O₃ (0–0.8 wt.%)-doped 0.82Bi_0.5Na_0.5TiO₃–0.18Bi_0.5K_0.5TiO₃ (BNKT18) lead-free piezoelectric ceramics were synthesized by a conventional solid-state process. The effects of Gd₂O₃ on the microstructure, the dielectric, ferroelectric and piezoelectric properties were investigated. X-ray diffraction (XRD) data shows that Gd₂O₃ in an amount of 0.2–0.8 wt.% can diffuse into the lattice of BNKT18 ceramics and form a pure perovskite phase. Scanning electron microscope (SEM) images indicate that the grain size of BNKT18 ceramics decreases with the increase of Gd₂O₃ content; in addition, all the modified ceramics have a clear grain boundary and a uniformly distributed grain size. At room temperature, the ferroelectric and piezoelectric properties of the BNKT18 ceramics have been improved with the addition of Gd₂O₃, and the BNKT18 ceramics doped with 0.4 wt.% Gd₂O₃ have the highest piezoelectric constant (d₃₃ = 137 pC/N), highest relative dielectric constant (ε_r = 1023) and lower dissipation factor (tan δ = 0.044) at a frequency of 10 kHz. The BNKT18 ceramics doped with 0.2 wt.% Gd₂O₃ have the highest planar coupling factor (k_p = 0.2463).     

Powder synthesis and properties of LiTaO3 ceramics

The LiTaO₃ powders with sub micrometer grade grain size have been synthesized successfully using a molten salt method. Lithium tantalate began to form at 400 °C reaction temperature and transformed to pure phase without residual reactants when it was processed at 500 °C for 4 h in static air. The undoped LiTaO₃ ceramics with a Curie temperature about 663 °C were obtained by pressureless sintering at 1300 °C for 3 h. The relative dielectric constant (ɛ_r) increases from 50 to 375 at temperature ranging from 30 to 663 °C and then decreases quickly as the temperature increases above 663 °C. The ceramics shows a relative dielectric constant of 49.4, a dielectric loss factor (tan δ) of 0.007, a coercive field (Ec) of 28.66 kV/cm and a remnant polarization (Pr) of 32.48 μC/cm² at room temperature.     

Phase formation and microwave dielectric properties of Pb2+ and Sr2+ doped La4Ti9O24 ceramics

Phase formation and microwave dielectric properties of the Pb²⁺ and Sr²⁺ doped La₄Ti₉O₂₄ ceramics were investigated. Using electron diffraction and Rietveld analysis of the X-ray powder diffraction patterns, we show that the increase in the concentration of Pb²⁺ and Sr²⁺ doping results in the structural transition from La₄Ti₉O₂₄ to a La_2/3TiO₃-type phase (Ibmm, No. 74). A change in the crystalline phase considerably affects the microwave dielectric properties, increasing the ɛ_r from 37 to 130, reducing Q × f from 25,000 to 5500, and increasing temperature coefficient of the resonant frequency (TCF) from 15 to 300 ppm/°C.     

Preparation,phase structure and microwave dielectric properties of CoLi2/3Ti4/3O4 ceramic

A new low loss microwave dielectric ceramic with composition of CoLi_2/3Ti_4/3O₄ was prepared by a conventional solid-state reaction method. The compound has a cubic spinel structure [Fd-3m (227)] similar to MgFe₂O₄ with lattice parameters of a = 8.3939 Å, V = 591.42 Å³, Z = 8 and ρ = 4.30 g/cm³. This ceramic has a low sintering temperature (～1050 °C) and good microwave dielectric properties with relative permittivity of 21.4, Q × f value of 35,000 GHz and τ_f value of ?22 ppm/°C. Furthermore, the addition of BaCu(B₂O₅) (BCB) can effectively lower the sintering temperature from 1050 °C to 900 °C and does not induce much degradation of the microwave dielectric properties. Compatibility with Ag electrode indicates that the BCB added CoLi_2/3Ti_4/3O₄ ceramics are good candidates for LTCC applications.