为红外激光器生长高质量的InAs量子点

美国喷气推进实验室最近研究出了一种用于生长高质量InAs量子点的改进型方法。用这种改进型方法制作的InAs／InGaAs／InP量子点半导体激光器,能够在室温下在≥1．8μm波长上工作。而以前报道的基于InP衬底的InAs量子点激光器却只能在77K的低温下在1．9μm波长上工作。     

GSMBE-Grown InGaAs/InGaAsP Strained Quantum Well Lasers at 1.84 Micron Wavelength

报道了GSMBE方法生长波长1.84μm的InGaAs/InGaAsP/InP应变量子阱激光器．40μm条宽、800μm腔长的平面电极条形结构器件,室温下以脉冲方式激射,20℃下阈值电流密度为3.8kA／cm2,外微分量子效率为9.3%．     

气源分子束外延生长的InAs/InP(100)量子点激光器

利用气源分子束外延(GSMBE)技术,在InP(100)衬底上生长InAs量子点激光器.有源区包含5层InAs量子点,每层量子点的平均尺寸是2.9 nm和76 nm,面密度在1010 cm-2左右,势垒层为InGaAsP.室温下量子点的光致发光中心波长在1.55 μm,发光峰半高宽为108 imeV.通过化学湿法腐蚀制备双沟道8μm宽脊条激光器,在20℃连续波工作模式下,腔长为0.7 mm的激光器的阈值电流为143 mA(2.5 kA/cm2),器件的激射中心波长在1.55 μm.由于量子点尺寸的非均匀性,在大电流注入,激光器的激射谱展宽.器件单端面最大输出功率为27 mW,功率斜率效率为130 mW/A.     

2~3微米波段InP基无锑激光器和光电探测器

介绍了我们基于InP衬底采用无锑材料体系开展的2~3μm波段激光器及光电探测器方面的持续探索,包括采用赝配三角形量子阱方案的2~2.5μm波段I型InGaAs多量子阱激光器、采用虚拟衬底异变方案的2.5~3μm波段I型InAs多量子阱激光器、以及截止波长大于1.7μm的高In组分InGaAs光电探测器等,这些器件结构均采用GSMBE方法生长,其中2.5μm以下波长的激光器已实现了高于室温的CW激射并获实际应用,2.9μm波长的激光器也在热电制冷温度下实现了脉冲激射,含超晶格电子阻挡势垒层的截止波长2.6μm InGaAs光电探测器暗电流显著减小,此类光电探测器材料已用于航天遥感焦平面组件的研制.     

新型长波长InP基谐振腔增强型光探测器

介绍了一种新型长波长InP基谐振腔增强型(RCE)光探测器。通过V(FeCl3):V(H2O)溶液对InGaAs牺牲层的选择性湿法腐蚀,制备出具有InP/空气隙的高反射率分布布拉格反射镜(DBR),并将该选择性湿法腐蚀技术成功地应用到长波长InP基谐振腔增强型光探测器的制备中去,从而彻底解决了InP/InGaAsP高反射率分布布拉格反射镜难以外延生长的问题。所制备出的谐振腔增强型光探测器,其台面面积为50μm×50μm,底部反射镜为1.5对的InP/空气隙分布布拉格反射镜,顶部反射镜靠InGaAsP与空气的界面反射来实现。测试结果表明,该谐振腔增强型光探测器在波长1.510μm处获得了约59％的峰值量子效率,在3V反偏压下暗电流为2nA,3dB响应带宽达到8GHz。     

刻蚀腔InGaAsP/InP双异质结激光器的制作与特性

本文报道了用反应离子刻蚀（RIE）与晶向湿法化学腐蚀（XWCE）相结合沿InP衬底（110）方向获得工作波长1．3μm的InGaAsP／InP双异质结激光器的腔面的方法．用CH4：H2：Ar2的混合物作干法刻蚀的反应气体，用H2SO4：HCl：H2O2作湿法腐蚀的腐蚀剂，我们获得了质量较好的激光器的光学腔面．用一个刻蚀腔面与一个解理面组成激光器的F－P腔，我们获得了它的宽接触阈值电流和微分量子效率与用传统的解理腔面的激光器的宽接触阈值电流与微分量子效率相当的激光器．     

侧向腐蚀在1.3μm垂直腔面发射激光器中的应用

研究了广泛应用于垂直腔面发射激光器(VCSEL)等I-V族光电子器件制作的侧向腐蚀技术.分别采用C6H8O7:H2O2溶液、HCl:H3PO4溶液对InAlAs材料,InP材料进行了侧向腐蚀试验,获得了较稳定的速率,并对其腐蚀机制和晶向选择性进行了分析.采用侧向腐蚀技术制备了电流限制孔径分别为11μm和5 μm的1.3...     

1.3μm自组织InGaAs/InAs/GaAs量子点激光器分子束外延生长

报道了分子束外延生长的1.3μm多层InGaAs/InAs/GaAs自组织量子点及其室温连续激射激光器.室温带边发射峰的半高宽小于35meV,表明量子点大小比较均匀.原子力显微镜图像显示,量子点密度可以控制在(1～7)×1010cm-2范围之内,而面密度处于4×1010cm-2时有良好的光致发光谱性能.含有三到五层1. 3μm量子点的激光器成功实现了室温连续激射.     

1.3μm自组织InGaAs/InAs/GaAs量子点激光器分子束外延生长

报道了分子束外延生长的1.3μm多层InGaAs/InAs/GaAs自组织量子点及其室温连续激射激光器.室温带边发射峰的半高宽小于35meV,表明量子点大小比较均匀.原子力显微镜图像显示,量子点密度可以控制在(1～7)×1010cm-2范围之内,而面密度处于4×1010cm-2时有良好的光致发光谱性能.含有三到五层1. 3μm量子点的激光器成功实现了室温连续激射.     

1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy

报道了分子束外延生长的1.3μm多层InGaAs/InAs/GaAs自组织量子点及其室温连续激射激光器. 室温带边发射峰的半高宽小于35meV，表明量子点大小比较均匀. 原子力显微镜图像显示，量子点密度可以控制在(1～7)E10cm-2范围之内，而面密度处于4E10cm-2时有良好的光致发光谱性能. 含有三到五层1.3μm量子点的激光器成功实现了室温连续激射.     

Room-temperature operation of InP-based InAs quantum dot laser

A ridge waveguide quantum dot (QD) laser with a stripe width of 15 /spl mu/m was fabricated by using the seven-stacked InAs QD layers based on the InAlGaAs-InAlAs material system on InP [001] substrate. Room-temperature lasing operation was observed at 1.501 /spl mu/m, which is the first observation from the InAs QDs with the InAlGaAs-InAlAs structure. The characteristic temperature of the InAs QD laser calculated from the temperature dependence of threshold current density was 135 K in the temperature range from 200 K to room temperature.     

Reactive Ion Etching of GaAs, GaSb, InP and InAs in Cl2／Ar Plasma

Reactive ion etching characteristics of GaAs,GaSb,InP and InAs using Cl_2/Ar plasma have been investigated,it is that,etching rates and etching profiles as functions of etching time,gas flow ratio and RF power.Etch rates of above 0.45 μm/min and 1.2 μm/min have been obtained in etching of GaAs and GaSb respectively, while very slow etch rates (<40 nm/min) were observed in etching of In-containing materials,which were linearly increased with the applied RF power.Etched surfaces have remained smooth over a wide range of plasma conditions in the etching of GaAs,InP and InAs,however,were partly blackened in etching of GaSb due to a rough appearance.     

1516nm room temperature CW operation of quantum dot InAs/InP(311)B singlemode laser

Reported is the first demonstration of the performance and properties of a singlemode Fabry-Perot laser processed from InAs/InP(311)B quantum dot material, which gives emission at 1.516 mum under continuous-wave operation at room temperature     

低温酸刻蚀对多晶硅表面织构化的影响

采用低温酸刻蚀,通过优化HF-HNO3-H2O腐蚀溶液体系配比及相关工艺参数,在多晶硅材料的表面制备了绒面结构,并进行SEM表面形貌分析和反射谱的测试。结果表明,低温刻蚀比常温刻蚀在生产工艺中更有利于控制反应速度,从而得到效果较好的绒面结构。研究中发现,在不同HF-HNO3-H2O腐蚀溶液体系配比中,温度对反应速率的影响有较大差异,当HNO3含量相对较低时,低温刻蚀工艺有较好的效果。所得最佳绒面制备方案为:酸腐蚀溶液体系配比为VHF∶VHNO3∶VH2O=1∶4∶2,温度为3℃,反应速率控制为2.6μm/min。该方案已在25MW多晶硅太阳电池生产线上实施,不增加工艺难度和生产成本,适合于工业生产。     

Low chirp operation in 1.6 μm quantum dot laser under 2.5 GHzdirect modulation

A long wavelength InAs quantum dot laser on an InP substrate was operated under continuous wave current at room temperature and had a threshold current of 20 mA. Modulation bandwidth was 4 GHz and the low chirp of around 0.01 nm in lasing wavelength was achieved during 2.5 GHz current modulation     

Butt joint integrated extended cavity InAs/ InP (100) quantum dot laser emitting around 1.55 μm

The first butt joint integrated extended cavity InAs/InP (100) quantum dot (QD) Fabry-Perot laser emitting around 1.55 mum is demonstrated. Continuous wave lasing at room temperature on the QD ground state transition is achieved. The threshold current is comparable to that of all-active QD lasers. The Butt joint reflectivity for straight waveguides is below -40 dB.     

InGaAs quantum dot lasers with submilliamp thresholds and ultra-lowthreshold current density below room temperature

Continuous-wave operation of InGaAs quantum dot lasers is studied. A very low threshold current of 460 μA is achieved at 200 K for a 5 μm×1170 μm oxide-confined stripe laser. For a larger stripe width of 11 μm, a threshold current density of 5.2A/cm² is demonstrated. The characteristic threshold temperature is -700 K in the temperature range of 14-200 K, and drops rapidly around room temperature     

利用限制扩散湿法刻蚀法制作GaAs微透镜

采用微透镜作为输出耦合镜,与垂直腔面发射激光器(VCSEL)的p-DBR和n-DBR构成复合腔,可以获得大功率单横模激光输出,改善光束质量。在GaAs衬底上采用限制扩散湿法刻蚀技术制作出不同直径的微透镜,研究了微透镜形成的基本原理、工艺流程,通过控制腐蚀的时间和腐蚀溶液的配比度,得到了不同曲率半径的微透镜,并且对微透镜表面形貌进行了研究。     

Room-temperature optically pumped InAs/GaAs quantum dots microdisk lasers on SiO2/Si chip

We report on room temperature continuous-wave optically pumped InAs/GaAs quantum dot whispering gallery mode microdisk lasers,heterogeneously integrated on silica/silicon chips.The microdisks are fabricated by photolithography and inductively coupled plasma etching.The lasing wavelength is approximately 1200 nm and the obtained lowest laser threshold is approximately 28μW.The experimental results show an approach of possible integrated Ⅲ-Ⅴ optical active materials on silica/silicon chip for low threshold WGM microdisk lasers.