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反应磁控溅射直接生长绒面结构ZnO:Al-TCO薄膜及其特性研究 总被引:1,自引:1,他引:0
利用反应磁控溅射技术,在玻璃衬底上直接生长获得了"弹坑状"绒面结构的ZnO:Al-TCO薄膜。通过梯度O2生长(GOG,gradual oxygen growth)方法改善ZnO薄膜的透过率和绒度特性,并且具有较好的电学性能。通过优化实验,GOG方法生长ZnO:Al薄膜(薄膜结构:11.0sccm/10R+9.5sccm/15R)的"弹坑状"特征尺寸为300~500nm,可见光范围透过率达到90%,方块电阻约为4.0Ω/□,电子迁移率为17.4cm2/V-1.s-1。大面积镀制的ZnO:Al具有良好的绒面结构和电学均匀性,可应用于光伏(PV)产业化推广应用。 相似文献
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通过优化ZnO缓冲层(buffer layer),有效地改善了由金属有机化学气相沉积(MOVCD)法制备的ZnO:B薄膜的光电特性。结果表明,"富氧"的缓冲层有效增加了ZnO:B-TCO的近红外区域透过率,使其更适应宽光谱薄膜太阳电池的发展要求。经过优化的ZnO:B,"类金字塔"状晶粒尺寸约300~500nm,波长550nm处绒度(haze)为10.8%,薄膜电子迁移率为20.7cm2/Vs,电阻率为2.14×10-3Ω.cm,载流子浓度为1.41×1020cm-3,且在400~1 500nm波长范围内的平均透过率为83%(含2mm厚玻璃衬底)。 相似文献
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研究了MOCVD技术制备的不同B2H6掺杂流量下ZnO薄膜的微观结构和光电性能变化.XRD和SEM的研究结果表明,ZnO薄膜具有(110)峰择优取向的绒面结构特征.当B2H6流量为10sccm时,在6cm×6cm面积玻璃衬底上生长出厚度为1000nm,方块电阻为~12Ω/□,平均透过率大于80%,迁移率为30.5cm2/(V·s)的绒面结构ZnO薄膜.PL谱测试表明B掺杂提高了ZnO薄膜的晶体质量,有力地说明了B掺杂ZnO薄膜具有更好的电学稳定性;低压H2氛围中退火可以有效提高ZnO薄膜的电子迁移率.将其用作Si薄膜太阳电池的前电极,电池性能与日本Asahi-U type SnO2作前电极的电池具有同等效果. 相似文献
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绒面ZnO薄膜的生长及其在太阳电池前电极的应用 总被引:1,自引:0,他引:1
研究了MOCVD技术制备的不同B2H6掺杂流量下ZnO薄膜的微观结构和光电性能变化.XRD和SEM的研究结果表明,ZnO薄膜具有(110)峰择优取向的绒面结构特征.当B2H6流量为10sccm时,在6cm×6cm面积玻璃衬底上生长出厚度为1000nm,方块电阻为~12Ω/□,平均透过率大于80%,迁移率为30.5cm2/(V·s)的绒面结构ZnO薄膜.PL谱测试表明B掺杂提高了ZnO薄膜的晶体质量,有力地说明了B掺杂ZnO薄膜具有更好的电学稳定性;低压H2氛围中退火可以有效提高ZnO薄膜的电子迁移率.将其用作Si薄膜太阳电池的前电极,电池性能与日本Asahi-U type SnO2作前电极的电池具有同等效果. 相似文献
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研究了反应压力对金属有机化学气相沉积(MOCVD)技术制备未掺杂ZnO薄膜的微观结构和光电特性影响.X射线衍射(XRD)和扫描电子镜(SEM)的研究结果表明,随着反应压力的降低,ZnO薄膜(002)择优峰的强度呈现相对减弱趋势,并且出现了较强的(110)峰;Hall测量表明,低的反应压力有助于提高薄膜电学特性.200 Pa时制备出的ZnO薄膜具有明显的"类金字塔"状绒面结构,电阻率为1.28×10-2 Ω·cm.实验中沉积的ZnO薄膜在600~2 600 nm内平均透过率超过80%,而短波长范围由于光散射作用,ZnO薄膜的垂直透过率有所下降. 相似文献
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磁控反应溅射直接生长绒面H化Ga掺杂ZnO-TCO薄膜及其特性研究 总被引:3,自引:3,他引:0
采用直流磁控溅射技术,在玻璃衬底上直接生长出了具有绒面结构的H化Ga掺杂ZnO(HGZO)薄膜。研究了H2流量对薄膜结构、表面形貌及光电特性的影响。实验表明,在溅射过程中引入H2明显改善HGZO薄膜电学性能,并且能够直接获得具有绒面结构的薄膜。在H2流量为2.0sccm时,所制备的HGZO薄膜具有特征尺寸约200nm的类金字塔状表面形貌,同时薄膜方阻为4.8Ω,电阻率达到8.77×10-4Ω.cm。H2的引入可以明显改善薄膜短波区域的光学透过,生长获得的HGZO薄膜可见光区域平均透过率优于85%,近红外区域波长到1 100nm时仍可达80%。为了进一步提高薄膜光散射能力和光学透过率,根据不同H2流量下HGZO薄膜性能的优点,提出了梯度H2技术生长HGZO薄膜;采用梯度H2工艺生长获得的HGZO薄膜长波区域透过率有了一定的提高,薄膜具有弹坑状表面形貌,并且其光散射能力有了明显提高。 相似文献
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利用低压MOCVD技术在玻璃衬底上生长了改进型绒面结构ZnO:B薄膜。改进型ZnO:B薄膜包含两层薄膜,第一层采用传统工艺技术生长了类金字塔状晶粒,第二层借助相对低温生长技术获得了类球状晶粒。典型的双层生长技术获得的MOCVD-ZnO:B薄膜具有相对高的电子迁移率~27.6 cm2/Vs,主要归因于提高了晶界质量,减少了缺陷态。随着第二层修饰层厚度的增加,MOCVD-ZnO:B薄膜的绒度提高,而光学透过率有所下降。相比于传统工艺生长的ZnO薄膜,双层结构的MOCVD-ZnO:B薄膜应用于硅基薄膜太阳电池展现了较高的太阳电池转化效率。 相似文献
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研究了利用LP-MOCVD技术制备的不同B掺杂浓度对ZnO薄膜的微观结构和光电特性影响.对XRD和SEM的研究结果表明,B掺杂对ZnO薄膜的微观结构有重大影响.通过优化工艺,当B2H6流量为17sccm(约1%掺杂浓度)时,在20cm×20cm大面积衬底上生长出厚度为700nm,方块电阻为38Ω/□,透过率大于85%,迁移率为17.8cm2/(V·s)的绒面结构ZnO薄膜.其应用于太阳电池背反射电池后,可使电池短路电流提高将近3mA,使20cm×20cm面积的a-Si集成电池效率高达9.09%. 相似文献
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研究了利用LP-MOCVD技术制备的不同B掺杂浓度对ZnO薄膜的微观结构和光电特性影响.对XRD和SEM的研究结果表明,B掺杂对ZnO薄膜的微观结构有重大影响.通过优化工艺,当B2H6流量为17sccm(约1%掺杂浓度)时,在20cm×20cm大面积衬底上生长出厚度为700nm,方块电阻为38Ω/□,透过率大于85%,迁移率为17.8cm2/(V·s)的绒面结构ZnO薄膜.其应用于太阳电池背反射电池后,可使电池短路电流提高将近3mA,使20cm×20cm面积的a-Si集成电池效率高达9.09%. 相似文献
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Preparation of transparent conducting ZnO:Al films on glass substrates by ultrasonic spray technique 总被引:3,自引:3,他引:0
Transparent conductive Al doped ZnO thin films were deposited by ultrasonic spray technique.Conditions of preparation have been optimized to get good quality.A set of aluminum(Al) doped ZnO(between 0 and 5 wt%) thin films were grown on glass substrate at 350℃.Nanocrystalline films with a hexagonal wurtzite structure show a strong(002) preferred orientation.The maximum value of grain size G = 32.05 nm is attained of Al doped ZnO film with 3 wt%.All the films have low absorbance in the visible region,thus the films are transparent in the visible region;the band gap energy increased from 3.10 to 3.26 eV when Al concentration increased from 0 to 3 wt%.The electrical conductivity of the films increased from 7.5 to 15.2(Ω·cm)-1.So the best results are achieved in Al doped ZnO film with 3 wt%. 相似文献
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金属有机化学气相沉积(MOCVD)技术生长的绒面ZnO透明导电(ZnO-TCO)薄膜应用于Si基薄膜太阳电池上能够形成"陷光结构",以提高薄膜太阳电池效率和稳定性。本文将电子束反应蒸发技术生长的掺W的In2O3(In2O3:W,(IWO)薄膜作为缓冲层,应用于MOCVD-ZnO:B薄膜与玻璃之间,可促进ZnO:B薄膜的生长,并且有效提升薄膜的光散射特性。当IWO缓冲层厚度为20nm时,获得的IWO/ZnO:B薄膜的电阻率为2.07×10-3Ω.cm,迁移率为20.9cm2.V-1.s-1,载流子浓度为1.44×1020 cm-3;同时,薄膜具有的透过率大于85%,且在550nm处绒度较ZnO:B薄膜提高了约9.5%,在800nm处绒度较ZnO:B薄膜提高了约4.5%。 相似文献
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B. M. Ataev V. V. Mamedov A. K. Omaev B. A. Magomedov 《Materials Science in Semiconductor Processing》2003,6(5-6):535-537
A low-temperature modification of the Chemical vapor deposition (CVD) growth with the RF-discharge plasma generated in CVD reactor during the growth process has been reported. This method allows us to significantly increase the effective pressure of atomic oxygen during the deposition, and to shift the stoichiometry of the growing film to oxygen excess. With RF activation we could lower the substrate temperature by more than 200°C, down to 420°C. The obtained zinc oxide/α-sapphire films feature high crystallinity, perfect surface morphology and good electrical and optical properties at the expense of both the decrease in the width of the transition layer and amount of the uncontrolled impurities. 相似文献
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We put forward an n-ZnO/p-Si heterojunction solar cell model based on AFORS-HET simulations and provide experimental support in this article. ZnO:B (B-doped ZnO) thin films deposited by metal-organic chemical vapor deposition (MOCVD) are planned to act as electrical emitter layer on p-type c-Si substrate for photovoltaic applications. We investigate the effects of thickness, buffer layer, ZnO:B affinity and work function of electrodes on performances of solar cells through computer simulations using AFORS-HET software package. The energy conversion efficiency of the ZnO:B(n)/ZnO/c-Si(p) solar cell can achieve 17.16% (Voc: 675.8 mV, Jsc:30.24 mA/cm2, FF: 83.96%) via simulation. On a basis of optimized conditions in simulation, we carry out some experiments, which testify that the ZnO buffer layer of 20 nm contributes to improving performances of solar cells. The influences of growth temperature, thickness and diborane (B2H6) flow rates are also discussed. We achieve an appropriate condition for the fabrication of the solar cells using the MOCVD technique. The obtained conversion efficiency reaches 2.82% (Voc: 294.4 mV, Jsc: 26.108 mA/cm2, FF: 36.66%). 相似文献
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Matj Hla Shohei Fujii Alex Redinger Yukari Inoue Germain Rey Maxime Thevenin Valrie Deprdurand Thomas Paul Weiss Tobias Bertram Susanne Siebentritt 《Progress in Photovoltaics: Research and Applications》2015,23(11):1630-1641
We present an approach for deposition of highly conductive nominally undoped ZnO films that are suitable for the n‐type window of low band gap solar cells. We demonstrate that low‐voltage radio frequency (RF) biasing of growing ZnO films during their deposition by non‐reactive sputtering makes them as conductive as when doped by aluminium (ρ≤1·10−3Ω cm). The films prepared with additional RF biasing possess lower free‐carrier concentration and higher free‐carrier mobility than Al‐doped ZnO (AZO) films of the same resistivity, which results in a substantially higher transparency in the near infrared region (NIR). Furthermore, these films exhibit good ambient stability and lower high‐temperature stability than the AZO films of the same thickness. We also present the characteristics of Cu(InGa)Se2, CuInSe2 and Cu2ZnSnSe4‐based solar cells prepared with the transparent window bilayer formed of the isolating and conductive ZnO films and compare them to their counterparts with a standard ZnO/AZO bilayer. We show that the solar cells with nominally undoped ZnO as their transparent conductive oxide layer exhibit an improved quantum efficiency for λ > 900 nm, which leads to a higher short circuit current density JSC. This aspect is specifically beneficial in preparation of the Cu2ZnSnSe4 solar cells with band gap down to 0.85 eV; our champion device reached a JSC of nearly 39 mAcm−2, an open circuit voltage of 378mV, and a power conversion efficiency of 8.4 %. Copyright © 2015 John Wiley & Sons, Ltd. 相似文献