ZAO特性及其在CIGS电池中的应用

透明导电氧化物薄膜(Transparent Conductive Oxides,简称TCO)用途广泛,介绍了TCO应用于光伏领域中的铜铟镓硒薄膜(CIGS)太阳电池,是CIGS太阳电池中不可缺少的一部分。简要阐述了其可见光范围内的透明性和导电性及其成因,以及作为CIGS薄膜太阳电池中窗口层的作用。将ITO和ZAO透明导电薄膜在CIGS太阳电池的应用进行相比,以掺铝的氧化锌(ZnO∶Al简称ZAO)透明导电薄膜为例,对其性能、制备方法及过程进行了简要阐述,并概括了大面积ZAO薄膜的性能。     

ZnO基紫外光透明导电薄膜的研究进展

ZnO是一种宽禁带半导体材料,通过阳离子Al^3＋掺杂可以改善其导电性,而且通过掺杂MgO进行“能带剪裁”可以实现从紫外到可见光范围内的完全透明。因此,ZnO基紫外光透明导电薄膜近年来逐渐成为半导体光电材料与器件的研究热点之一。本文介绍了紫外光透明导电薄膜MgxZn1-xO：Al的基本特性、制备方法及研究进展。     

氧气分压和衬底温度对铝掺杂氧化锌透明导电薄膜性能的影响（英文）

通过直流磁控溅射法在玻璃衬底上制备了一系列铝掺杂氧化锌透明导电薄膜,研究了氧气分压和衬底温度对铝掺杂氧化锌透明导电薄膜的结构和光电性能的影响。X-射线衍射研究表明铝掺杂氧化锌薄膜是沿c-轴方向堆积的具有六方结构的多晶薄膜,实验获得的最佳沉积衬底温度和氧分压分别为400℃和5∶100(O_2/Ar),在该条件下制备的铝掺杂氧化锌薄膜具有较低的表面电阻(80Ω/sq)和较高的平均透过率(80%)。     

功能型聚酰亚胺薄膜研究进展

概述了功能型聚酰亚胺（PI）薄膜的主要种类和特点,分别介绍了透明聚酰亚胺薄膜、耐电晕聚酰亚胺薄膜、黑色聚酰亚胺薄膜、导电聚酰亚胺薄膜和高导热聚酰亚胺薄膜的研究进展,并对功能型薄膜将来的发展趋势进行了展望。     

采用USP-CVD沉积SnO2透明导电膜--F、Sb掺杂及特性研究

以F、Sb掺杂,采用超声雾化喷涂化学气相沉积工艺制备出二氧化锡透明导电膜。对SnO2∶F薄膜的沉积工艺进行了研究,探索出最佳的工艺条件,沉积出方块电阻低达6 赘/□左右的高透过率透明导电薄膜,其可见光平均透过率可以达到85%。分析了HF和NH4F掺杂的不同点。对在两种最佳工艺条件下沉积的膜的结构、电学性质进行了研究。对SnO2∶Sb薄膜的电学性质进行了研究,用X射线衍射方法分析了在同一温度下,不同Sb掺杂浓度的膜的结构。并对薄膜的透过率、折射率及光学带隙等光学性质进行了分析。     

溶胶-凝胶法制备ZAO透明导电氧化物薄膜的研究进展

溶胶-凝胶法是一种高效的制膜技术。本文综述了溶胶-凝胶法制备氧化锌铝(ZAO)透明导电氧化物薄膜(TCO)的原理、特点及研究进展,指出了采用溶胶-凝胶法制备ZAO薄膜今后急需解决的问题。     

溶胶-凝胶法制备ZAO透明导电氧化物薄膜的研究进展

溶胶-凝胶法是一种高效的制膜技术。本文综述了溶胶-凝胶法制备氧化锌铝（ZAO）透明导电氧化物薄膜（TCO）的原理、特点及研究进展,指出了采用溶胶-凝胶法制备ZAO薄膜今后急需解决的问题。     

室温无反应磁控溅射法制备ZAO导电薄膜及其特性研究

以氧化铝(Al2O3)掺杂的ZnO陶瓷靶材为基础,室温下采用无氧直流磁控溅射法在载玻片衬底上制备了ZnO∶Al(ZAO)透明导电薄膜,研究了不同的Al2O3掺杂量对薄膜微观结构、电阻率和透光率性能的影响。结果表明:掺杂量大于1%(质量分数,下同)的薄膜均呈c轴择优取向生长,薄膜致密无裂纹,具有光滑表面;掺杂量对薄膜的电阻率影响显著,当掺杂量为3%时,薄膜的电阻率最小,仅为7.4×10-3Ω.cm;掺杂量对薄膜的透光性无明显影响,不同掺杂量的薄膜在可见光区的平均透光率接近90%。     

热电池用FeS_2/电解质复合薄膜正极的制备及性能

采用超声喷涂技术及丝网印刷薄膜化工艺制备了FeS_2/电解质隔膜复合薄膜正极,研究了薄膜正极中电解质添加量、三种碳材料导电剂及导电剂的不同添加量对单体电池放电性能的影响,通过扫描电子显微镜(SEM)对FeS_2正极在电解质隔膜上的表面形态进行了表征。实验结果表明,一体化薄膜正极中电解质添加量对正极材料的影响较小,含量为15%时较为适宜。一体化薄膜正极中乙炔黑、活性炭和CNTs的适宜添加量分别为3%,3%和1%。     

长寿命荧光灯玻壳材料及其表面工艺学

玻壳使普通荧光灯流明维持率降低的主要原因是：（１）在玻壳内表面和荧光粉粒表面生成了吸收可见光的碱金属汞齐;（２）在玻璃体内生成了吸收可见光的“色心”。本文介绍：（１）选择玻壳的材料,以减少生成汞齐和色心;（２）采用在玻壳内表面涂敷透明连续的阻挡薄膜,以制止生成汞齐;（３）采用在玻壳内表面涂敷透明连续的保护薄膜,以防止强烈紫外辐射对玻璃体的“过度曝光”。本文还特别介绍,在无极感应放电荧光灯玻壳表面涂敷透明连续的导电薄膜,以抑制电磁辐射干扰     

Preparation and research of silver nanowires transparent conductive films on glass

ABSTRACT

In this paper, we use a simple coating method to prepare silver nanowires transparent conductive films on glass. The optimal condition of preparation of the silver nanowires transparent conductive films were examined. Experimental result shows that the coating is a kind of convenient operation and suitable for mass production to prepare silver nanowires transparent conductive films. The main influence factors are the thickness of the silver nanowires layer, the thickness of the resin layer, the degree of dilution of the resin and the hot pressing temperature. In the experiments, the optimal condition is the dilution ratio of resin and ethyl acetate is 1:10, the thickness of resin layer is 10µm, hot-pressing temperature is 100°C and the thickness of silver nanowires layer is 100µm. And we got the sample whose square resistance is 38 Ω/sq and the light transmittance is 86%.     

Optimization of gallium-doped ZnO thin films grown using Grey–Taguchi technique

In this paper, optimization of the process parameters considering multiple performance characteristics to prepare the transparent conducting gallium-doped zinc oxide thin films with radio frequency (RF) magnetron sputtering was investigated. Experiments based on the Grey–Taguchi technique were conducted to examine the effect of deposition parameters including RF power, process pressure, substrates temperature and process time, aiming to obtain highly transparent and conductive films. Comparing with the optimal parameter set selected from orthogonal array by Taguchi method, the optimal grey theory prediction design (GTPD) can receive an improvement of 5.75?% in electrical resistivity and 1.47?% in optical transmittance. Further refinements respectively to RF power and process pressure with fixing other parameters level in GTPD were explored. The results show the alteration on RF power and process pressure in the GTPD can receive over 31?% and 51?% of improvement in electrical resistivity, respectively, with keeping the visible range optical transmittance over?85?%.     

Study on the electrical and optical properties of ITO and AZO thin film by oxygen gas flow rate

Transparent conductive oxide (TCO) thin films such as tin doped indium oxide (ITO), zinc doped indium oxide (IZO) and Al doped zinc oxide (AZO) have been widely used as transparent electrode for display. ITO and AZO thin films for display was prepared by the facing targets sputtering (FTS) system. The FTS method is called a plasma-free sputter method because the substrate is located apart from plasma. This system can deposit the thin film with low bombardment by high energetic particles in plasma such as γ-electrons, negative ions and reflected Ar atoms. ITO and AZO thin films were deposited on glass substrate at room temperature with oxygen gas flow rate and input power. And the electrical, structural and optical properties of the thin films were investigated. As a result, the resistivity of ITO, AZO thin film is 6?×?10^?4 Ω cm, 1?×?10^?3 Ω cm, respectively. And the optical transmittance of as-deposited thin films is over 80% at visible range.     

Surface modification of stainless steel bipolar plates for PEMFC (proton exchange membrane fuel cell) application

Stainless steel 316 and 304 plates were deposited with a metallic film (top layer) and a conductive oxide film (intermediate layer) by a sputtering method and an E-beam method, respectively. The conductive oxide film was formed on the stainless steel plates in the range of thickness of 200, 400, and 600 nm. The XRD patterns of the conductive oxide films showed a typical indium-tin oxide (ITO) crystalline phase. The metallic films of 100 nm thickness were subsequently formed on the surface region of the bare stainless steel plates and the stainless steel plates deposited with ITO thin film. Surface morphologies of the stainless steel bipolar plates deposited with conductive film and metallic film were observed by AFM and FE-SEM. The metallic films on the stainless steel plates represented the microstructural morphology of the fine columnar grains of 10 nm diameter and 60 nm length. The electrical resistivity and contact angle of the stainless steel bipolar plates modified were examined as a function of the thickness of the conductive oxide film.     

铁电薄膜漏电流研究现状

铁电薄膜的漏电流问题一直是困扰铁电存储器发展的重要问题。文章介绍了铁电薄膜的主要导电机理如热激发电子电导、空间电荷限制电流(SCLC)、Pool-Frenkel发射、肖特基发射等,影响漏电流大小的主要因素如薄膜厚度、工艺温度、晶粒尺寸、电极材料、搀杂离子等。同时介绍了漏电流对铁电薄膜极化和抗疲劳特性的影响。     

Chemical Design and Thin Film Preparation of p-Type Conductive Transparent Oxides

Chemical design to find a new transparent conductive oxide having p-type conductivity has been proposed. Following the chemical design, we have selected CuGaO₂ and CuAlO₂ as candidate materials. CuGaO₂ thin films were prepared on silica glass substrates by RF sputtering method. The optical band gap of the film was estimated to be 3.4 eV. Positive sign of Seebeck coefficient demonstrated the p-type conductivity of the film. The dc conductivity of the film was 5.6 × 10^–3S·cm^-1 and the activation energy was 0.22 eV at room temperature. Because of rough texture of the film, the observed conductivity was not an intrinsic property of the material. Further, CuAlO₂ thin films were prepared by laser ablation. The film deposited in O₂ atmosphere of 1.3 Pa at 690°C showed higher optical transmission in visible and near-infrared regions than previously reported. Contribution of Cu 3d components to upper edge of valence band in CuGaO₂ and CuAlO₂ were confirmed by photoemission spectroscopic measurements.     

染污复合绝缘子交流电场特性研究

为了揭示复合绝缘子在污秽潮湿环境中运行时的电场分布特性,笔者基于复合绝缘子的污闪理论,研究了绝缘污秽电场模型和计算方法,采用污层表面电导率和模拟导电污层的电阻层边界条件,应用有限元电场计算软件ElecNet对复合绝缘子污秽电场进行了交流时谐电场计算分析,比较了污层沿绝缘子轴向均匀分布和不均匀分布两种情况下的绝缘子电场分布,分析了污层表面电导率大小(即不同的污秽度)以及污层分布状态对绝缘子表面电场分布的影响。得出,当伞裙上表面电导率高于下表面时,沿泄漏路径的电位分布线性度降低;当伞裙上表面电导率低于下表面时,沿泄漏路径的电位分布变化不明显。     

磁控溅射法沉积TCO薄膜的电源技术

电源在磁控溅射法制备透明导电氧化物(TCO)薄膜的技术中起着重要的作用。本文重点介绍了磁控溅射TCO薄膜的电源技术发展现状及进展,首先简要说明了目前应用最广泛的直流电源技术及具备灭弧能力的脉冲电源技术的原理和主要优缺点。进一步的,介绍了具备快速灭弧补偿功能的新型直流电源技术和模块化电源技术。最后进一步分析了代表新一代技术的高功率脉冲磁控溅射(HPPMS)电源的基本原理和优良特性,并指出其发展所面临的挑战。     

Electron‐beam‐pumped light sources using graphite nanoneedle field emitters and Si electron‐transparent films

Sputter‐induced carbon nanoneedle field emitters and Si electron‐transparent films have been developed for electron‐beam‐pumped light sources. The sputter‐induced carbon nanoneedle field emitters exhibited a stable electron emission of 0.1 mA at an average field of 13 V/µm. The 1.5‐µm thick Si electron‐transparent films achieved an electron transmittance of about 60% at an acceleration voltage of 27 kV. An electron‐beam‐pumped light source was demonstrated from the excitation of N₂ gas, and a N₂ gas spectrum was clearly observed. The increase of the beam current is important for increasing the light intensity. Copyright © 2007 Institute of Electrical Engineers of Japan© 2007 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.