Comments on `X-band 0.5, 1, and 2 watt power amplifierswith marked improvement in power-added efficiency'

For the original article see ibid., vol.38, no.6, p.707-11 (1990). Power-added efficiency results from MMIC amplifiers which were designed, fabricated, and tested based on efforts reported in the above-named work have caused a reassessment of measurements made for that work. The new MMIC amplifiers exhibited a maximum power-added efficiency of 32% in X-band at 1-W output power. These results are significantly lower than the 53% average power-added efficiency for the 1-W hybrid amplifiers previously reported. In a recent experiment on one of the original hybrid amplifiers, the previous efficiency results could not be replicated or confirmed. It is prudent to assume that the earlier amplifier efficiency measurements were in error     

X-band power AlGaAsInGaAs P-n-p HBTs

AlGaAs/InGaAs P-n-p heterojunction bipolar transistors (HBTs) were fabricated using carbon-doped material grown by nonarsine metal-organic vapor-phase epitaxy (MOVPE). F_max of 39 GHz and f_t of 18 GHz were obtained. Operated in common-base mode, a P-n-p HBT achieved 0.5-W output power with 8-dB gain at 10 GHz; saturated output power was 0.69 W. Results are presented for devices with emitter lengths from 120 to 600 μm     

X-band low phase distortion MMIC power limiter

Describes the design and performance of an 8-GHz MMIC (monolithic microwave integrated circuit) MESFET (metal-semiconductor FET) power limiter. This limiter incorporates a special gate biasing scheme and makes use of appropriate load conditions which reduce the unexpected phase variations experienced by the signal through the device. Measured performances (phase variations less than 8 over a 22-dB input power range) are found to be in agreement with the theoretical ones obtained from large signal simulations     

High-performance Ka-band and V-band HEMTlow-noise amplifiers

Quarter-micron-gate-length high-electron-mobility transistors (HEMTs) have exhibited state-of-the-art low-noise performance at millimeter-wave frequencies, with minimum noise figures of 1.2 dB and 32 GHz and 1.8 dB at 60 GHz. At Ka-band, two-stage and three-stage HEMT low-noise amplifiers have demonstrated noise figures of 1.7 and 1.9 dB, respectively, with associated gains of 17.0 and 24.0 dB at 32 GHz. At V-band, two stage and three-stage HEMT amplifiers yielded noise figures of 3.2 and 3.6 dB, respectively, with associated gains of 12.7 and 20.0 dB and 60 GHz. The 1-dB-gain compression point of all the amplifiers is greater than +6 dBm. The results clearly show the potential of short-gate-length HEMTs for high-performance millimeter-wave receiver application     

An X-band high-efficiency MMIC power amplifier with 20-dBreturn losses

Describes the design principles and measured performance of an X-band high-efficiency monolithic-microwave-integrated-circuit (MMIC) power amplifier and discuss pertinent factors of the ion-implantation process. Also presented is a worst-case power prediction of the chip performance and a large-signal design using small-signal simulation. This balanced amplifier is fully monolithic with input and output return losses of better than 20 dB provided by Lange couplers. These return losses make it very convenient to cascade with other components. For high-efficiency operation, the drain voltage is 6 V. Across the 40% bandwidth from 8 to 12 GHz, the amplifier produces 1.6 to 2.1 W of output power at 33 to 40% power-added efficiency. For high-power operation, the drain voltage is 8.5 V. The amplifier can produce 2.4 to 2.8 W of output power at 26 to 29% power-added efficiency across the same 40% bandwidth     

X-band MMIC amplifier with pulse-doped GaAs MESFET's

The design and test of an X-band monolithic four-stage low-noise amplifier (LNA) with 0.5 μm-gate pulse-doped GaAs MESFETs for application in a direct broadcast satellite (DBS) converter is presented. The key feature of the research is a detailed demonstration of the advantages of using series feedback with experiments and simulations. This LNA shows an excellent input VSWR match under 1.4 as well as a noise figure of 1.67 dB and a gain of 24 dB at 12 GHz. The noise figure, the gain and VSWRs exhibit very little bias current dependence due to the exceptional features of the pulse-doped structure FETs and the optimized circuit design. Insensitivity to bias current implies performance stability in the face of process fluctuations. Thus, the yield of chips with noise figures of less than 2.0 dB is as high as 62.5%, and the variations of gain and VSWR are highly uniform as well     

Dual passband dichroic plate for X-band

A need arose in the NASA Deep Space Network, a worldwide tracking system, for a dichroic plate that would be transparent at two desired frequency bands in the X-band region and be totally reflective at S-band. The dual-passband dichroic plate that was developed to meet the technical requirements is a thick metallic plate having an array of periodic round holes filled with Teflon plugs. Test results on an experimental prototype plate indicate that it is technically possible to design a dielectrically filled dichroic plate that meets all of these technical requirements     

X-band HBT VCO with high-efficiency CB buffer amplifier

A monolithic AlGaAs-GaAs HBT VCO with common-base (CB) buffer amplifier was demonstrated at X-band. Overall efficiency of 30% was achieved with 93-mW output power at 9.8 GHz. The MMIC chip is only 1 mm×2 mm, including the monolithic varactor diode. The circuit design offers several unique advantages: (1) the CB buffer amplifier reduces the frequency-pull effect from the external load; (2) the design for the oscillation condition and the output impedance match for power are separated; and (3) the overall efficiency can be high. A step-by-step design procedure is discussed     

Estimation of X-band scattering properties of treecomponents

An X-band FM-CW very-fine-range resolution scatterometer was used to acquire backscattering data for individual branches for a number of tree species. Using a model to describe the scattering source function and an experimental procedure for selected removal of plant parts, an estimation was made of η, the volume backscatter coefficient, and κ, the volume extinction coefficient. It is found that: (1) leaves are strong attenuators as well as scatterers; (2) the albedo (the ratio η/κ), at a given angle of incidence, is nearly independent of the tree type; (3) the tree limbs are good attenuators but rather poor scatterers; and (4) te albedo changes as a function of the angle of incidence and for deciduous trees is also a function of the season     

Microstrip linear slot array antenna for X-band

The X-band microstrip slot antenna array is described as an attempt to achieve moderate bandwidth and overcome the problems of radiation from microstrip feed lines and surface waves in the dielectric. The discussion covers development of a mathematical simulation that computes the radiation pattern of a single microstrip slot and the feeding microstripline; construction of a uniform broadband microstrip slot antenna array; development of a mathematical simulation that computes the radiation pattern in the H- and E-planes; and investigation of the mutual coupling between the slots. A comparison is made between computed and measured results at X-band frequencies     

Transmit/receive module technology for X-band active arrayradar

Phased array radar system developments using X-band transmit/receive (T/R) module technology are summarized. Requirements are developed from systems concepts for fighter aircraft radar applications. Factors influencing system performance are discussed in terms of the allowable tradeoffs that must be considered for deployable systems. T/R module architectures are investigated in light of the system derived performance requirements. These module requirements are reduced to the individual circuit function level, and examples of circuits developed to meet these requirements are presented. Critical T/R module technologies are discussed in view of the latest developments in microwave active and control devices, manufacturing assembly processes and equipment, package materials and fabrication processes, and test automation. Module developments during the past 25 years are discussed chronologically and described in terms of the performance characteristics attained. Test requirements unique to module integration and aperture-level performance verification are highlighted. Module price targets are derived from affordability constraints imposed by the fighter aircraft radar application     

Effect of tree structure on X-band microwave signature ofconifers

Experimental studies are performed on some coniferous trees, Austrian pine, Nordmann spruce, and Norway spruce, to investigate the relation between the tree architecture and radar signal at X-band. For a single tree, the radar cross section (RCS) is measured as a function of the scatterer location at 90° incidence. It is found that the main scatterers are the leafy branches, and the difference between σ_vv and σ_hh is significant at the upper portion of the tree. At the lower portion of the tree σ^o_vv and σ°_hh have almost the same level. For a group of trees the angular trends of σ°_vv and σ°_hh are measured. It is found that the levels of σ°_vv and σ° _hh are of the same order, but their angular trends vary from one tree species to the other, depending on the tree species structure. The experimental results are interpreted with the help of a theoretical model which accounts for the structure of the tree     

High-gain, V-band, low-noise MMIC amplifiers usingpseudomorphic MODFETs

State-of-the-art, 60-GHz, low-noise MMICs based on pseudomorphic modulation-doped FETs, with 0.25-μm×60-μm gates offset 0.3 μm from the source ohmic, are discussed. Single-state low-noise amplifiers (LNAs) exhibited minimum noise figures of 2.90 dB with 4.1 dB of associated gain at 59.25 GHz. Dual-state MMICs had minimum noise figures of 3.5 dB and 10.8 dB of associated gain at 58.50 GHz. Cascaded four-stage LNAs (two dual-stage MMICs) had minimum noise figures of 3.7 dB and over 20.7 dB of associated gain at 58.0 GHz. Finally, when biased for maximum gain, the four-stage amplifier exhibited over 30.4 dB of gain at 60.0 GHz     

Design of an X-band transformer-coupled amplifier withimproved stability and layout

The authors present a push-pull transformer-coupled amplifier for monolithic microwave applications, and discuss how its stability and layout have been improved with respect to conventional approaches by means of opposite-phase feedback and fully symmetrical layout. The circuit provides state-of-the-art performance (10-dB gain and 18-dBm saturated power in the 4-8-GHz band) with only 165-mW DC power consumption     

An X-band experimental model of a millimeter-waveinterinjection-locked phased array system

An interinjection-locked 10 GHz model of a millimeter-wave phased-array system has been built and tested. It has been successfully demonstrated that this novel technique can be used to control limited-scan phased-array antennas. A beam shift of ±5° has been achieved with only one phase shifter in a four-oscillator system. Adaptability to monolithic fabrication and a reduction in the number of phase shifters required make this method attractive for use at millimeter-wave frequencies     

An X-band spacecraft transponder for deep spaceapplications-design concepts and breadboard performance

The design concepts and measured performance characteristics of an X-band breadboard deep-space transponder (DST) for future spacecraft applications are summarized. The DST consists of a double-conversion, superheterodyne, automatic phase tracking receiver, and an X-band exciter to drive redundant downlink power amplifiers. The receiver acquires and coherently phase tracks the modulated or unmodulated X-band uplink carrier signal. The exciter phase modulates the X-band downlink signal with composite telemetry and ranging signals. The measured tracking threshold, automatic gain control (AGC), static phase error, and phase jitter characteristics of the breadboard DST are in good agreement with the expected performance. The measured results show a receiver tracking threshold of -158 dBm and a dynamic signal range of 88 dB     

Response of X- and K-band cross section of thesea surface to small current variations

The modulation of the energy of centimetre waves on the sea surface by slowly varying currents is studied. An energy balance is used that contains effects of refraction, input of energy by wind, dissipation, and nonlinear triad interactions. This model predicts modulation factors on the order of 100 to 1000. The nonlinearity of the model makes it possible to find these large values, which, under certain circumstances, are also encountered in experiments     

High-efficiency Ku-band HBT MMIC power amplifier

A Ku-band monolithic HBT power amplifier was developed using a metal-organic chemical vapor deposition (MOCVD)-grown AlGaAs/GaAs heterojunction bipolar transistor (HBT) operating in common-emitter mode. At a 7.5 V collector bias, the amplifier produced 0.5 W CW output power with 5.0 dB gain and 42% power-added efficiency in the 15-16 GHz band. When operated at a single frequency (15 GHz), 0.66 W CW output power and 5.2 dB of gain were achieved with 43% PAE     

A high-performance, miniaturized X-band active mixer forDBS receiver application with on-chip IF noise filter

A GaAs monolithic microwave integrated circuit (MMIC) dual-gate FET active mixer at X-band is described that is designed for direct broadcast satellite (DBS) applications. All of the components of the mixer, including biasing circuitry, RF, LO, and IF matching networks, as well as the IF noise filter, are implemented monolithically into a 25-mil×30-mil area. The design was process tolerant, and layout was compact for manufacturability and low cost. The mixer was integrated monolithically into a complete single-chip DBS low-noise block (LNB) converter. The active mixer has a conversion gain of 5.5 dB and a single-sideband noise figure of 8.5 dB. The circuit is manufactured using a 0.5-μm gate length, buried p^- depletion mode MESFET process without substrate-through via holes     

An MMAC C-band FET feedback power amplifier

A feedback power amplifier using miniaturized microwave active circuit (MMAC) technology was developed for satellite C-band applications. This design demonstrates that a strong negative feedback can be implemented in the microwave frequencies to improve amplifier linearity and output power over a 750 MHz bandwidth. The amplifier provides a third-order intermodulation distortion improvement of 7 to 9 dB across the band at backoff, compared to results obtained using the conventional approach without feedback. The theory, proof-of-concept experiment, design, and MMAC implementation of the feedback amplifier are presented