小型化高功率微波限幅器研究

电子装备现已被大量应用,在如此复杂的电磁环境下高功率微波可导致接收机灵敏度下降甚至失效。为了满足高功率微波的防护需求,介绍了一种基于PIN 二极管的小型化高功率微波限幅器,体积为34 mm×Φ9 mm。测试结果表明,在0.3~2 GHz 频带内,该限幅器实现了小信号插损小于1 dB,输入输出驻波比小于1.5;可承受脉宽100 μs,占空比0.1%,峰值功率超过1000 W,漏功率小于17 dBm。国内外尚无类似指标限幅器相关报导。该高功率微波限幅器体积小、频带宽、耐功率高,可大大提高接收机可靠性,具有广阔的应用前景。     

微波二极管限幅器的理论分析

本文通过对波导型微波二极管限幅器等效电路的分析,导出了小信号的插入损耗‘驻波带宽、大信号的隔离、衰减带宽的计算公式‘以及它们与电路参数、微波二极管参数之间的关系。还讨论了气体放电管与限幅器之间的距离对性能的影响及限制限幅器承受功率的有关因素。     

宽带微波限幅器模块的研究

采用微波混合集成电路设计方法，用二只并联 ＰＩＮ二极管芯片和一只检波二极管芯片，在很小的腔体内制作了微波限幅器模块。其电参数为：频率范围 ｆ＝１．０～５．０ＧＨｚ，插入损耗ＩＬ≤０．４３ｄＢ，输入输出电压驻波比ＶＳｗＲ≤１．５，漏功率Ｐｌｉｍ≤１．８ｍＷ（输入功率为连续波１Ｗ时）。     

PIN 限幅器微波脉冲效应数值模拟

分析微波脉冲作用下PIN 器件效应机理,基于半导体物理方程,热传导模型研究PIN 器件物理模型。基于大功 率微波脉冲作用下的器件高温强场特性的,选择Sentaurus-TCAD 软件中的相关物理模型,建立器件多物理模型-电路的 联合仿真模型;开展验证性实验结果与仿真结果在大于30dBm 的功率注入时比较吻合,证明仿真中使用的物理模型适用 于PIN 限幅器大功率微波脉冲效应机理分析。     

一种吸收式微波限幅器设计方法

本文介绍了一种基于lange电桥结构的吸收式微波限幅器设计方法。限幅电路采用PIN二极管和lange耦合器结构,可实现小型化和高性能限幅特性。测试结果表明,在S频段限幅器插入损耗小于0.9dB,可承受峰值超过100W的功率,限幅器隔离度大于26dB。该设计方法可显著缩小限幅器产品体积,提高限幅器性能,具有广阔的应用前景。     

一种性能良好的微波限幅器

本文介绍一种变容二极管微波限幅器的设计方法和实验结果。这种限幅器可保护混频晶体及高放的安全,从而提高雷达接收机的稳定性和可靠性。     

一种脉冲功率微波限幅器的设计

在限幅器最大输入功率理论分析基础上,根据PIN限幅二极管产品手册上最大连续波输入功率和给定脉宽下最大脉冲输入功率等条件,求解得到温度时间常数及任意脉宽下最大脉冲输入功率,给出了分析模型及计算公式。研制了实验验证电路,在频率1GHz、脉宽25μs、占空比1%条件下,最大脉冲输入功率43W,与理论分析相符。     

高功率微波对等离子体限幅器加热效应分析

等离子体限幅器利用入射的高功率微波电离气体,产生等离子体;该等离子体反射和吸收微波能量,保护电子设备不受来袭高功率微波损毁.基于射线跟踪理论,研究高功率微波透射功率随等离子体频率和电子碰撞频率的变化规律,分析加热效应对等离子体限幅器件防护性能的影响.对于长脉冲高功率微波,计算结果表明:随着温度升高,等离子体频率增高,使得微波透射功率减小,防护效果得以改善.在低气压限幅器中,考虑电子碰撞频率影响,选用Xe作为电离气体产生等离子体,能使限幅器更有效地发挥效能.     

一种C波段微波限幅器的研制

本文介绍了一种利用PIN二极管芯片而设计的C波段无源微波限幅器，并简要叙述了设计原理、设计过程及芯片的粘接技术。     

固体微波器件简介

近年来,固体微波器件的发展十分迅速,已经在各类电子设备中广泛地应用。固体微波器件的发展必然会对微波电子管发生影响,一些小功率的微波管已被固体器件所取代。我们根据一些国外资料,整理出一个固体微波器件简介,供同志们参考。 1.体效应二极管: 1963年美帝IBM公司的J.B.Gunn在研究砷化镓激光器的时候,发现了微波振荡,发明了体效应二极管(又叫耿氏二极管)。这种二极管不是利用P-N结来工作的,它有一个本征半导体的有源区域。当体效应二极管加上直流偏置电压后。就在负端产生电荷层并传播通过二     

Nonrefrigerated Bulk-Semiconductor Microwave Limiters

A microwave limiter using in intrinsic silicon that is operable at room temperature is described. The microwave non-linearity observed for the device is discussed in terms of intrinsic impact ionization, a behavior that is hypothesized from low-frequency studies of the V-I characteristics for the silicon element used. Thus the operation is thought to consist of a transition from essentially a dielectric medium at low RF applied fields to a medium of substantial conductivity resulting from plasma generation by impact ionization at high RF applied electric fields in the tens of kilovolts rms per centimeter. An appropriate circuit structure for the limiter in the form of a slotted metal diaphragm, or resonant waveguide iris is also discussed. In its center is placed the silicon element. The device transmits low-power signals but, shunted by the conductive silicon medium at high incident fields, reflects high power. Details for the fabrication of the limiter as well as a microwave characterization technique to determine absolute values of electric-field strength within and conductivity of the silicon specimen are presented. Finally, the operational details of an experimental model at 9.35 GHz are presented which demonstrate limiting action of 0.4 dB at low power up to 15 dB at a burnout power of 8-kW peak, 8 watts average with l- /spl mu/ s pulse width. Recovery time is about 5 /spl mu/ s.     

Practical Microwave Power Limiters

The near future holds considerable promise for the utilization of solid-state limiters as receiver protection elements. This correspondence describes the performance of ferrimagnetic limiters in the actual role of diode protection. The peak powers involved in the tests were up to 25 kw.     

Characteristics of Ferrite Microwave Limiters

Microwave ferrites that exhibit a nonlinear RF absorption as a function of RF power level can be utillzed in the construction of a passive microwave device which will allow small RF signals to be transmitted with very little attenuation but which will attenuate large RF signals considerably. Such a device tends to "limit" the amplitude of the microwave energy passing through the device and is therefore called a ferrite microwave limiter. One application of the ferrite limiter is in the protection of crystal detectors in pulsed radar sets. However, when a rectangular pulse of X-band RF energy is transmitted through the limiter, the output waveform is no longer rectangular but consists of a leading edge spike of 0.1-µsec duration followed by a plateau of highly attenuated RF energy. At the present time the leading edge spike is the major obstacle in the successful use of the ferrite microwave limiter as a TR cell in the protection of crystal detectors. Experimental techniques used to improve the performance of the limiter are presented, and the performance characteristics of an X-band ferrite microwave limiter are shown.     

微波固态功放组件中的电容器

介绍了固态功放组件中谐振、隔直、储能三类电容器的工作状态、阻抗特性及其失效机理,得出它们各自的等效电路,指出潜在的不稳定因素,并提出相应的解决方法。     

微波固态功放CAD研究

介绍了微波固态功放阻抗匹配电路的网络综合方法,提出了用精确的微带线模型实现匹配电路的新思路。选用Matlab语言,用计算机数值算法求解。用EESOF仿真软件对上述结果进行仿真,获得了令人满意的结果。     

Interaction of Signals in Ferromagnetic Microwave Limiters

A weak secondary signal is partially absorbed in a ferromagnetic microwave limiter that is saturated by a strong primary signal; the absorption is greatest when the two signals are close in frequency. The width of this absorption is determined here, and is found to be proportional to the spin wave linewidth and to the square root of the excess power in the primary signal. The theory of this effect is presented and is found to agree well with experiment.     

微波固态器件与单片微波集成电路技术的新发展

对不同时代的单片微波集成电路(MMIC)的器件工艺发展和应用发展状况进行概况总结,并结合当前的研究与应用热点,重点分析以砷化镓(GaAs)、氮化镓(GaN)为代表的微波化合物固态器件和基于MMIC的异构异质集成新技术路径,并就今后发展的趋势做出展望.     

Nonlinear Resonant Circuits for Microwave Low Power Limiters

The letter comprises an analysis of nonlinear coupled resonant circuits for application in limiting low power microwave signals. It presents a novel approach to the use of the resonant circuit containing a nonlinear element which concerns obtaining power dependence of the quality factor and transmission losses without tuning resonant frequency. The basic theory of the single circuit is presented and examples provided of simulations in Microwave Office and measurements results of the designed two-stage limiter. The effect of transforming the input signal amplitude causes this type of circuit to be power-sensitive and allows to limit low power signals.     

Ku频段微波宽频带固态功率放大器

本文对用微波宽带功率单片集成电路的功率合成技术和实现方法进行了讨论,并用 Ku 波段宽带微波功率单片集成电路合成出功率大于 200W、频带宽度大于 30%Ku 波段固态放大器。对合成中的关键技术进行了分析。     

X波段固态微波频率合成器的研制

本文报道一种可用计算机控制输出频率的 X 波段固态微波频率合成器,其输出频率在100MHz 范围内以100kHz 步进可调,秒级频率稳定度为1.722×10~(-9),长期频率稳定度与主晶振相同。最后给出了利用差频法测量短期频率稳定度的测量系统框图及其测量结果。