InGaAsP-InP ridge-waveguide DBR lasers with first-order surfacegratings fabricated using CAIBE

The design and operation of InGaAsP-InP ridge-waveguide (RW) distributed Bragg reflector (DBR) multiple quantum-well lasers with first-order surface gratings are presented. The RW DBR lasers are fabricated using only a single growth step without growth on a corrugated surface. Uncoated devices with grating etch depths of 0.6 and 0.5-μm exhibit pulsed threshold currents of 32 and 43 mA with slope efficiencies of 0.34 and 0.24 W/A, respectively. The device with a grating etch depth of 0.5-μm operates on a single longitudinal mode with about 40 dB side-mode suppression. All these results are from devices with Bragg condition wavelengths which are red-shifted from the peak spontaneous emission wavelength by over 400 Å     

Single-frequency 1310-nm AlGaInAs-InP grating-outcoupled surface-emitting lasers

Single-frequency 1310-nm grating-outcoupled surface-emitting (GSE) semiconductor lasers with output slope efficiencies exceeding 0.1 mW/mA into multimode fibers, threshold currents below 22 mA, and >30-dB sidemode suppression ratios are reported. These GSE lasers consist of 500-/spl mu/m-long active ridges that excite one end of surface-emitting second-order outcoupling gratings with 200-/spl mu/m-long first-order distributed Bragg reflector gratings terminating the laser cavities at both ends. The grating outcouplers range from 10 to 50 /spl mu/m in length. These lasers have an open eye pattern for nonreturn-to-zero signals at 2.5 Gb/s into single-mode fibers. The full-width half-maximum far-field beam divergences range from 1.5/spl deg/ /spl times/ 8/spl deg/ to 5/spl deg/ /spl times/ 8/spl deg/.     

Asymmetric cladding InGaAs-GaAs-AlGaAs ridge waveguide distributed Bragg reflector lasers with operating wavelengths of 915-935 nm

The design and operation of InGaAs-GaAs-AlGaAs asymmetric cladding ridge waveguide distributed Bragg reflector lasers is presented. Targeted for the remote sensing of water vapor with absorption lines in the /spl lambda//spl sim/930 nm region, these devices operate CW with threshold currents as low as 11 mA and slope efficiencies as high as 0.37 W/A. They also operate with over 30-dB side-mode suppression, and the typical CW characteristic temperature, T/sub 0/, is 95 K.     

MQW DBR lasers with monolithically integrated external-cavity electroabsorption modulators fabricated without modification of the active region

In this letter, we report the design and operation of multiple-quantum-well distributed Bragg reflectors (MQW DBR) lasers with monolithically integrated external-cavity electroabsorption (EA) modulators without modification of the active region fabricated using only a single growth step. Devices were fabricated with operating wavelengths of 1.06, 1.07, and 1.08 /spl mu/m, which are red-shifted from the material gain peak wavelength (/spl lambda/=1.05 /spl mu/m) by 100, 200, and 300 /spl Aring/, respectively. The /spl lambda/=1.06-/spl mu/m device has a continuous-wave (CW) threshold current of 16 mA and a slope efficiency of 0.09 W/A from the modulator facet, while the /spl lambda/=1.08 /spl mu/m device has a CW threshold current of 33 mA and a slope efficiency of 0.40 W/A from the modulator facet. The /spl lambda/=1.06-, 1.07-, and 1.08-/spl mu/m device exhibits an extinction ratio of /spl ges/20 dB at a modulator bias of 1.0, 1.4, and 2 V, respectively.     

MQW wavelength-tunable DBR lasers with monolithically integrated external cavity electroabsorption modulators with low-driving voltages fabricated by selective-area MOCVD

The design and operation of multiple-quantum-well (MQW) wavelength-tunable distributed Bragg reflector (DBR) InGaAs QW lasers with nonabsorbing gratings and monolithically integrated external cavity electroabsorption modulators fabricated by selective-area MOCVD are presented. Uncoated devices exhibit CW threshold currents as low as 10.5 mA with slope efficiencies of 0.21 W/A from the laser facet. Wavelength tuning of 7 nm is obtained by injection current heating of the DBR section. These devices also exhibit extinction ratios of 18 dB from the modulator facet at a low modulator bias of 1 V, when measured with a broad-area detector. When coupled to a singlemode fiber, these devices exhibited high extinction ratios of 40 dB at a modulator bias of 1.25 V.     

Photopumped lasing at 1.25 /spl mu/m of GaInNAs-GaAs multiple-quantum-well vertical-cavity surface-emitting lasers

We report room-temperature (RT) continuous-wave (CW) photopumped operation of long-wavelength vertical-cavity surface-emitting lasers (VCSELs) employing a Ga/sub 0.7/In/sub 0.3/N/sub 0.007/As/sub 0.993/-GaAs multiple-quantum-well (MQW) active layer grown directly on a GaAs-AlAs distributed Bragg reflector (DBR). Evidence for laser oscillation includes spectral linewidth narrowing, clamping of spontaneous emission, and a distinct increase in slope efficiency at threshold. By taking advantage of lateral growth rate nonuniformity, we obtained laser emission over an extremely broad 110-nm wavelength range, from 1.146-1.256 /spl mu/m. Equivalent threshold current density over this range was estimated at 3.3-10 kA/cm/sup 2/.     

Widely tunable 850-nm metal-filled asymmetric cladding distributed Bragg reflector lasers

Broadly tunable distributed Bragg reflector (DBR) lasers utilizing metal-filled surface-etched diffraction gratings were fabricated on a GaAs-unstrained quantum well with AlGaAs core and cladding layers. Devices with 200- and 400-/spl mu/m gratings sections were fabricated. Single-mode devices are fabricated over a broad spectral range, exhibiting over 55 mW of single-facet output power. The optical properties of this structure are analyzed in terms of effective index step between the peak and valley of the grating and scattering loss in the DBR. Discrete devices were fabricated with lasing wavelengths between 846.6 and 862.9 nm at intervals of 1.44nm, representing a range of 16.3 nm. Wavelength tuning by current injection into the DBR section is explored, and a broad tuning range of over 18 nm is measured while single-mode performance is maintained. The spectral linewidth of these devices is measured. The temperature dependence of light versus current, threshold current values, and spectral characteristics are also examined.     

Lasing characteristics of high-performance narrow-stripe InGaAs-GaAs quantum-well lasers confined by AlAs native oxide

High-performance narrow-stripe InGaAs-GaAs quantum-well lasers with integral buried AlAs native-oxide layers have been fabricated. AlAs native-oxide layers above and below waveguide region were employed for current and optical confinement to form narrow-stripe lasers. A low temperature (400/spl deg/C) anisotropic wet oxidation technique was used to selectively oxidize AlAs layers in the epitaxial structure. The devices demonstrated continuous wave threshold currents of 3.5 mA, external quantum efficiencies of 82%, and a characteristic temperature of 133 K for 1.8 /spl mu/m-wide aperture, 400 /spl mu/m-long devices. Threshold currents of 1.7 mA were obtained by applying HR/HR coatings.     

A fully integratable 1.55-/spl mu/m wavelength continuously tunable asymmetric twin-waveguide distributed Bragg reflector laser

We demonstrate a single-frequency continuously tunable three-section distributed Bragg reflector laser operating at a center wavelength of /spl lambda//sub 0/=1.548 /spl mu/m using a fully integratable asymmetric twin-waveguide structure. A low-loss tapered mode transformer couples the light between the active waveguide, or gain region, and the passive ridge waveguide where the phase and grating tuning sections are located. The device has a threshold current of 50 mA and output power of nearly 13 mW, with a slope efficiency of 0.12 W/A and a tuning range of 4.8 nm under pulsed operation. An independent phase section is used to continuously tune the wavelength, thus avoiding mode hops. Using a delayed self-heterodyne technique, we determine the linewidth to be (146/spl plusmn/2) kHz.     

Wavelength-tunable asymmetric cladding ridge-waveguide distributedBragg reflector lasers with very narrow linewidth

Narrow-linewidth ridge-waveguide distributed Bragg reflector (DBR) lasers with asymmetric cladding are demonstrated. This design requires only a single epitaxial growth of an asymmetric cladding laser structure while the grating and the ridge waveguide are fabricated after the growth. These lasers have a threshold current as low as 9 mA, a slope efficiency of 0.3 W/A, and a T₀ of 100 K. Wavelength tuning of 8 nm is achieved by current injection heating of the DBR section. A spectral-linewidth minimum of 36 kHz is achieved at an output power of 20 mW and is limited by linewidth rebroadening due to current injection in both the gain section and DBR section     

Low-threshold native-oxide confined narrow-stripe folded-cavity surface-emitting InGaAs-GaAs lasers

Narrow-stripe folded-cavity surface-emitting InGaAs-GaAs lasers are demonstrated, AlAs native-oxide layers above and below waveguide region are employed for current and optical confinement to form narrow-stripe InGaAs-GaAs quantum-well lasers. A low-temperature (400/spl deg/C) selective wet-oxidation technique and an ion-beam-etching technique are used to fabricate insulator confined narrow-stripes and internal 45/spl deg/ deflectors, respectively. Continuous-wave threshold currents as low as 4.5 mA and 59% surface-emitting quantum efficiencies are achieved on the devices with 2-/spl mu/m-wide aperture and a 420-/spl mu/m-long cavity.     

Fabrication and Characteristics of high-speed oxide-confined VCSELs using InGaAsP-InGaP strain-compensated MQWs

This paper presents the fabrication and characteristics of high-performance 850-nm InGaAsP-InGaP strain-compensated multiple-quantum-well (MQW) vertical-cavity surface-emitting lasers (VCSELs). The InGaAsP-InGaP MQW's composition was optimized through theoretical calculations, and the growth condition was optimized using photoluminescence. These VCSELs exhibit superior performance with characteristics threshold currents /spl sim/0.4 mA and slope efficiencies /spl sim/0.6 mW/mA. The threshold current change with temperature is less than 0.2 mA, and the slope efficiency drops less than /spl sim/30% when the substrate temperature is raised from room temperature to 85/spl deg/C. A high modulation bandwidth of 14.5 GHz and a modulation current efficiency factor of 11.6 GHz/(mA)/sup 1/2/ are demonstrated. The authors have accumulated life test data up to 1000 h at 70/spl deg/C/8 mA.     

1.42 /spl mu/m continuous-wave operation of GaInNAs laser diodes

Continuous-wave (CW) operation of GaInNAs laser diodes in the 1.4 /spl mu/m range has been realised for the first time. A GaInNAs double quantum well separate confinement heterostructure was grown by solid source molecular beam epitaxy. Threshold currents as low as 66 mA and external efficiencies as high as 0.29 W/A could be demonstrated in CW operation. Lasing was observed up to 150/spl deg/C and a characteristic temperature T/sub 0/ of 111K was demonstrated. The emission wavelength at room temperature was centred at 1417 nm.     

Laterally coupled DBR laser emitting at 1.55 /spl mu/m fabricated by focused ion beam lithography

By using focused ion beam lithography high performance 1.55-/spl mu/m emitting distributed Bragg reflector lasers were realized suitable for high-speed optical telecommunication. Threshold currents of 8 mA and continuous-wave efficiencies of 0.37 W/A for 600-/spl mu/m-long devices were achieved. Stable single-mode emission with sidemode suppression ratios of > 40 dB were observed for the entire operation range. By relative intensity noise measurements an intrinsic 3-dB modulation frequency of > 10 GHz was estimated for a single-mode output power of 23 mW.     

可调谐单频掺镱光纤DBR激光器

对分布布拉格反射(DBR)的透射特性进行了分析,制作了一个单频窄线宽掺镱光纤DBR激光器.在977 nm半导体激光器泵浦下,在1052.5 nm波长处输出功率可达4 mW,线宽小于8 MHz(受测量仪器分辨率限制).采用弧形梁调谐光纤光栅,实现了DBR光纤激光器在单纵模工作状态下的连续调谐,调谐范围可达20.4 nm(1036.1～1056.5 nm),并研究了调谐对激光器的泵浦阈值和斜率效率的影响.     

Study on high-temperature performances of 1.3-/spl mu/m InGaAsP-InP strained multiquantum-well buried-heterostructure lasers

Stripe-width and cavity length dependencies of high-temperature performances of 1.3-/spl mu/m InGaAsP-InP well-designed buried-heterostructure strained multiquantum-well (MQW) lasers were investigated. The threshold currents as low as 4.5/10.5 mA and slope efficiencies as high as 0.48/0.42 mW/mA at 25/spl deg/C/85/spl deg/C were obtained in the MQW lasers with 1.5-/spl mu/m width, 250-/spl mu/m length, and 0.3/0.85 facet reflectivity. With temperature increasing from 25/spl deg/C to 85/spl deg/C, the MQW lasers exhibited lower output power degradation, the minimum value was 1.78 dB at an operation current of 45 mA. The MQW lasers were suitable for application in optical access networks.     

Low threshold current 1.3-/spl mu/m GaInNAs VCSELs grown by MOVPE

The structure of the conventional contact 1.3-/spl mu/m GaInNAs-GaAs vertical-cavity surface-emitting lasers (VCSELs) was optimized and low threshold current 1.3-/spl mu/m GaInNAs VCSELs grown by metal-organic vapor-phase epitaxy were reported. The idea is to optimize the active region, the doping profiles, and the pairs of p-distributed Bragg reflectors, and the detuning between the emission wavelength and the photoluminescence gain peak wavelength. The continuous-wave 1.0-mA threshold current was achieved for the single-mode VCSEL. For the multiple-mode VCSELs, the below 2-mA threshold currents at 5/spl deg/C-85/spl deg/C , the 1.13-mA threshold current at 55/spl deg/C, and 1.52-mA threshold current at 85/spl deg/C are the best results for 1.3-/spl mu/m GaInNAs VCSELs.     

CW electrooptical properties of InGaAsP(λ = 1.3 µm) buried-heterostructure lasers

The fabrication procedure, electrical properties, optical-bean characteristics, spectral characteristics, and temperature dependence of emission wavelength and threshold of InGaAsP buried-heterostructure (BH) lasers emitting at 1.3 μm are described. The dimensional requirements for fundamental-transverse mode operation have been determined. BH devices are characterized by low threshold currents, fundamental transverse mode operation, linear light output, and narrow spectral width. For 380 μm long devices threshold currents of 40 mA, slope efficiencies of 18 percent, forward resistance of 5 Ω, and T0values of 75 K have been attained.     

Very narrow linewidth asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector lasers

Asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector (RW-DBR) lasers are demonstrated with a spectral linewidth as low as 39 kHz for an output power of 24 mW. The fabrication requires only a single standard epitaxial growth of a laser structure while the use of a thin top cladding layer allows for a shallow reactive ion etch of the distributed Bragg reflector. These RW-DBR lasers have a threshold current of 12.4 mA, a slope of 0.3 W/A, and over 40 dB side-mode suppression at a wavelength of 1010 nm.     

A theoretical model of multielectrode DBR lasers

A theoretical model for two- and three-section tunable distributed Bragg reflector (DBR) lasers is presented. The static tuning properties are studied in terms of threshold current, linewidth, oscillation frequency, and output power. Regions of continuous tuning for three-section DBR lasers are presented. Different routes for continuous tuning, when the injection currents to the passive sections are varied, are discussed and the limitations on the continuous tuning range are clarified. By proper control of these currents, a tuning range of approximately 400 GHz is predicted at 1.55 μm wavelength, which is in good agreement with the experimental results published thus far