硅场致发射阵列的工艺研究

介绍了硅场致发射阵列工艺研究的初步结果。应用湿法化学腐蚀、硅锥切削及介质平坦化技术成功地制备出了理想形状的场致发射阵列。     

MEMS中硅湿法深槽刻蚀工艺的研究

针对硅基MEMS湿法深槽刻蚀技术的难点,在硅材料各向异性腐蚀特性的基础上探索了湿法工艺。对腐蚀液含量、温度、添加剂含量对刻蚀速率及表面粗糙度的影响,掩膜技术等进行了实验研究,优化得到了最佳刻蚀条件。应用该技术成功地刻蚀出深度高达330μm的深槽,为MEMS元器件的加工提供了一种参考方法。     

一种用于药物释控系统的微针阵列及其制作方法的研究

 通过皮肤输送药物最大的障碍是皮肤最外层的角质层．传统的静脉注射用针只有刺透皮肤深入到深层组织内部,才能有效地输送药物,这容易引起感染和疼痛,给患者造成很大的不适．介绍了一种采用硅微加工技术制作的微针,它长度适中,既能穿透皮肤的角质层,又刺激不到深层组织的神经,实现无痛注射的目的．其加工工艺是采用硅的HNA(硝酸+氢氟酸+乙酸)腐蚀系统,是一种硅的各项同性的湿法腐蚀方法．     

硅超薄可动悬空薄膜的弹性模量测试分析

利用纳米硬度计通过对超薄悬空薄膜的弯曲试验来测定硅可动悬空薄膜的弹性模量。硅悬空薄膜采用各向异性湿法腐蚀自停止技术制备。纳米硬度计测试方法精确测量了硅悬空薄膜的弯曲形变。试验研究表明,尺寸为2mm×1μm的硅悬空薄膜的弹性模量平均值为152GPa,差异为3.9%-6.8%。     

硅湿法磷酸体系中不锈钢的冲刷腐蚀研究

采用动态旋转冲刷腐蚀装置，在含硅湿法磷酸体系中，分别考察了不锈钢316L和904L在冲刷条件下浆体的组成、硅砂含量和硅砂粒度对材料冲刷腐蚀速率的影响，并在不同硅含量下讨论了流速对不锈钢的腐蚀规律。试验结果表明，316L以腐蚀为主，当硅砂质量百分含量达10％时，冲刷作用增强；而904L耐液相腐蚀性能优异，但在流速大于4m/s时，硅砂质量百分含量高于3％，粒度大于200μm时，冲刷腐蚀速度增加明显。     

Pyrex7740玻璃通孔湿法腐蚀技术研究

本文研究报道了Pyrex7740玻璃湿法腐蚀通孔技术.将四寸硅玻璃键合圆片的玻璃衬底减薄,并在玻璃上分别制备PECVD SiC、W/Au和PECVD多晶硅三种不同掩膜及其开口,最终利用40％ HF腐蚀实现玻璃通孔.整个工艺过程与IC工艺兼容,并可进行圆片级批量加工.观察并研究纵向和横向腐蚀过程和通孔形貌,对比三种不同腐...     

基于MEMS技术集成硅微棱镜耦合和微流道的近红外表面等离子体谐振芯片

为促进表面等离子体谐振（surface plasmon resonance, SPR）测试技术在片上的实现,提出硅基近红外SPR芯片,由硅微棱镜、金属膜和聚合物微流体通道组成．利用有掩膜和无掩膜各向异性湿法腐蚀加工出底角为25．24。的单微硅棱镜阵列,用有掩膜各向异性湿法腐蚀加工出底角为54．74。的双微硅棱镜阵列,利用聚合物的复制注塑技术加工得到微流体通道．在波长1550nm时进行仿真与实验测试,实验测得以空气、水和乙醇为测试介质的SPR角分别为16．75°、22．58°和22．72°,这些值比以玻璃棱镜加工SPR传感器测得的SPR角要小很多．通过实验表明,近红外SPR芯片可以实现表面等离子体谐振传感器微型化,进而推动微全分析系统的实现,降低其成本并提高其性能．     

一种FIB刻蚀结合KOH腐蚀的制造纳米梁的新方法

常规的通过干法刻蚀制作纳米梁的方法会不可避免地在梁上引入晶格损伤层。本文提出一种制造无晶格损伤层纳米梁的新工艺方法。在常规光刻后,辅助利用FIB(聚焦离子束)刻蚀修改硅梁中部上方的SiO2掩模。根据单晶硅的材料和工艺特点,通过KOH各向异性腐蚀,硅梁两侧壁与硅片表面垂直,并自停止为(111)面。自停止面自校正地沿112晶向自硅梁中部向两端扩展,直至硅梁成型。经过冷冻干燥,最终在(110)SOI硅片上制得了宽度为112nm的单晶硅纳米梁。自校正的腐蚀方式提升了工艺稳定性,并且由于结合利用了湿法腐蚀和FIB技术,此工艺方法具有无晶格损伤层、工艺重复性好、加工精度高等优点。     

铝及铝合金与熔融钠反应的研究

研究了纯铝和铝硅合金在３５０～４５０℃与熔融钠的反应,采用光镜（ＯＭ）和Ｘ射线衍向射分析（ＸＲＤ）观察和分析腐蚀产物组织形貌,分布和腐蚀产物的动力学生长机制,。实验结果表明,试样受熔融钠腐蚀的程度与铝中硅含量多少有关,铝硅合金在熔融钠中的腐蚀是受扩散控制的固相反应。     

基于MEMS技术的微型模具制作工艺研究

针对微型模具的结构和精度要求,在研究硅模具和背板生长两种工艺路线的基础上,提出了无背板生长工艺路线,并介绍了工艺路线中所涉及的三种MEMS加工方法,即UV-LIGA技术中的光刻、微电铸以及硅MEMS加工技术中的湿法刻蚀.实验结果表明,硅模具和背板生长模具呈54.74°的斜面,且硅模具容易损坏,背板生长模具受应力影响易产生变形;而无背板生长工艺能够获得侧壁垂直、表面细致、使用寿命长的模具,满足结构和精度要求.     

Wet etching of GaN,AlN, and SiC: a review

The wet etching of GaN, AlN, and SiC is reviewed including conventional etching in aqueous solutions, electrochemical etching in electrolytes and defect-selective chemical etching in molten salts. The mechanism of each etching process is discussed. Etching parameters leading to highly anisotropic etching, dopant-type/bandgap selective etching, defect-selective etching, as well as isotropic etching are discussed. The etch pit shapes and their origins are discussed. The applications of wet etching techniques to characterize crystal polarity and defect density/distribution are reviewed. Additional applications of wet etching for device fabrication, such as producing crystallographic etch profiles, are also reviewed.     

Highly ordered hexagonally arranged nanostructures on silicon through a self-assembled silicon-integrated porous anodic alumina masking layer

A combined process of electrochemical formation of self-assembled porous anodic alumina thin films on a Si substrate and Si etching through the pores was used to fabricate ideally ordered nanostructures on the silicon surface with a long-range, two-dimensional arrangement in a hexagonal close-packed lattice. Pore arrangement in the alumina film was achieved without any pre-patterning of the film surface before anodization. Perfect pattern transfer was achieved by an initial dry etching step, followed by wet or electrochemical etching of Si at the pore bottoms. Anisotropic wet etching using tetramethyl ammonium hydroxide (TMAH) solution resulted in pits in the form of inverted pyramids, while electrochemical etching using a hydrofluoric acid (HF) solution resulted in concave nanopits in the form of semi-spheres. Nanopatterns with lateral size in the range 12-200?nm, depth in the range 50-300?nm and periodicity in the range 30-200?nm were achieved either on large Si areas or on pre-selected confined areas on the Si substrate. The pore size and periodicity were tuned by changing the electrolyte for porous anodic alumina formation and the alumina pore widening time. This parallel large-area nanopatterning technique shows significant potential for use in Si technology and devices.     

硅量子线的研究

利用常规硅工艺的反应离子刻蚀、各向异性化学腐蚀、热氧化和超低压ＣＶＤ生长技术，成功地硅单晶衬底上制作了硅／二氧化硅异质界面结构超精细硅量子线。本项研究结果对开展低维量子结构物理及硅量子器件的研究具有十分重要的意义。     

Anisotropic multi-step etching for large-area fabrication of surface microstructures on stainless steel to control thermal radiation

Controlling the thermal radiation spectra of materials is one of the promising ways to advance energy system efficiency. It is well known that the thermal radiation spectrum can be controlled through the introduction of periodic surface microstructures. Herein, a method for the large-area fabrication of periodic microstructures based on multi-step wet etching is described. The method consists of three main steps, i.e., resist mask fabrication via photolithography, electrochemical wet etching, and side wall protection. Using this method, high-aspect micro-holes (0.82 aspect ratio) arrayed with hexagonal symmetry were fabricated on a stainless steel substrate. The conventional wet etching process method typically provides an aspect ratio of 0.3. The optical absorption peak attributed to the fabricated micro-hole array appeared at 0.8 μm, and the peak absorbance exceeded 0.8 for the micro-holes with a 0.82 aspect ratio. While argon plasma etching in a vacuum chamber was used in the present study for the formation of the protective layer, atmospheric plasma etching should be possible and will expand the applicability of this new method for the large-area fabrication of high-aspect materials.     

PZT厚膜的气雾化湿法减薄制备技术

锆钛酸铅（PZT）厚膜的制备技术是制作基于PZT厚膜的微传感器和微驱动器的关键技术之一．传统的制备方法难以兼顾厚膜制备中对厚度、性能、工艺复杂度以及成本等方面的要求,因此,提出了一种新的利用气雾化湿法减薄体材料制备PZT厚膜的技术．该技术结合传统的PZT湿法化学刻蚀方法和刻蚀雾滴的物理轰击效应,在反应中实时去除化学反应残留物,在减薄前后样品厚度均匀性几乎不变的情况下,平均刻蚀速率可达3．3μm/min,且工艺过程简单,成本低廉．实验结果表明,用该技术制备的PZT厚膜可满足微机电系统（MEMS）领域中微传感器和微致动器对于厚膜具备较高灵敏度和较大驱动能力的性能要求,     

Efficient nanostructured heterogeneous catalysts by electrochemical etching of partially crystallized Fe-based metallic glass ribbons

Although an increasing interest has been attracted to further develop heterostructured catalysts from metallic glasses(MGs) by heat treatment, overcoming surface oxidation effect is still a critical problem for such environmental catalysts. Herein, a short-time electrochemical etching of partially crystallized Febased ribbons in 0.3 M H3 PO4 electrolyte enables the formation of honeycomb-like nanoporous structure as effective catalytic active sites in Fenton-like process. Studies of structure and surface morphologies reveal that the formation of nanoporous structure by potentiostatic etching originates from electrochemical potential difference of nanocrystals(a-Fe(Si) and Fe2 B) and residual amorphous phase in partially crystallized ribbons, where Fe2 B having a lower open circuit potential tends to be selectively dissolved.Simultaneously, thin oxide layer after electrochemical etching exposes more active sites for H2 O2 activation and provides an effective protection of nanocrystals from massive loss during etching. Investigation of optimal processing conditions suggests that the selection of electrolyte plays an important role;dye degradation rates of etched ribbons in HNO3 and Na2 SO4 electrolytes can also achieve at least 2 times higher than that of as-annealed ribbons. This work holds the promise to develop novel environmental catalysts by effective electrochemical etching of partially crystallized ribbons.     

Nano-fabrication with a flexible array of nano-apertures

We report fabrication and use of a flexible array of nano-apertures for photolithography on curved surfaces. The batch-fabricated apertures are formed of metal-coated silicone tips. The apertures are formed at the end of the silicone tips by either electrochemical etching of the metal or plasma etching of a protective mask followed by wet chemical etching. The apertures are as small as 250 nm on substrates larger than several millimeters. We demonstrate how the nano-aperture array can be used for nano-fabrication on flat and curved substrates, and show the subsequent fabrication steps to form large arrays of sub-micron aluminum dots or vertical silicon wires.     

Anisotropic multi-step etching for large-area fabrication of surface microstructures on stainless steel to control thermal radiation

Abstract

Controlling the thermal radiation spectra of materials is one of the promising ways to advance energy system efficiency. It is well known that the thermal radiation spectrum can be controlled through the introduction of periodic surface microstructures. Herein, a method for the large-area fabrication of periodic microstructures based on multi-step wet etching is described. The method consists of three main steps, i.e., resist mask fabrication via photolithography, electrochemical wet etching, and side wall protection. Using this method, high-aspect micro-holes (0.82 aspect ratio) arrayed with hexagonal symmetry were fabricated on a stainless steel substrate. The conventional wet etching process method typically provides an aspect ratio of 0.3. The optical absorption peak attributed to the fabricated micro-hole array appeared at 0.8 μm, and the peak absorbance exceeded 0.8 for the micro-holes with a 0.82 aspect ratio. While argon plasma etching in a vacuum chamber was used in the present study for the formation of the protective layer, atmospheric plasma etching should be possible and will expand the applicability of this new method for the large-area fabrication of high-aspect materials.     

Fabrication of precisely controlled silicon wire and cone arrays by electrochemical etching

There is an exponentially growing need for well-oriented, vertical silicon nano/micro-structure arrays, particularly in high-density integrated electronic devices. Here, we demonstrate that precisely controlled vertical arrays of silicon wires and cones can be fabricated by a combined treatment strategy of electrochemical and chemical etchings. First, a periodically ordered array of silicon wires was readily fabricated at microscale by simple electrochemical etching in which the current density played a critical role in determining the wire diameter and interspacing. The microstructures fabricated by electrochemical etching were more precisely tuned by further chemical etching, thereby transforming into cone arrays with extremely sharp tips where the cone height was controlled by the etching time. This approach could have broad utility in many electronics requiring miniaturization and high-density integration such as field emitters, photovoltaic and thermoelectric devices.