任意形状隐身斗篷和电磁旋转器的研究

以无限长超材料任意形状壳为理论模型,研究超材料这种新型人工复合材料。在变换光学中,空间变换可以被认为是材料的变形,变换空间的介电常数和磁导率张量是材料的变形场得到的。通过数值求解拉普拉斯方程,根据光学变换理论,可以获得超材料的材料参数。利用全波仿真的方法仿真二维任意形状的隐身衣,电磁旋转器和集中器。当斗篷的介电常数和磁导率满足理论值时,隐身衣和电磁旋转器表现出完美的隐身和电磁旋转等特性。     

人工介质电磁参数随空间变化的特性研究

人工介质的本构参数描述了它的电磁特性。为了设计人工介质,需要了解其本构参数的变化规律。首先通过Maxwell方程分析了具有负电磁参数的人工介质的产生机理,然后在此机理下,通过S参数提取方法计算并分析了导体杆位置、结构大小和空间间距的变化对其本构参数的影响。通过HFSS仿真得到了比较精准的特性曲线。仿真结果解释了人工介质本构参数随结构特性的变化规律。     

基于RWG基函数的伽略金法中奇异性积分 的精确快速计算

利用电磁场积分方程的伽略金法求解理想导体电磁散射问题时需要计算奇异性的二重面积分(即4维积分).伽略金法的基函数和检验函数广泛采用RWG(Rao-Wilton-Glisson)矢量基函数.传统上采用奇异值提取技术和Duffy坐标变换法处理该奇异性积分,本文提出了一种更为精确和高效的计算方法,该新方法通过参数坐标变换、相对坐标变换、积分区域分解和广义Duffy坐标变换相结合的技术消除了被积函数的奇异性并降低了原4维奇异性积分的数值积分维数.通过计算实例证明该方法的精确性和高收敛特性.     

基于神经网络的曲面加工路径优化研究

针对曲面加工中截面法路径规划的优化问题,提出了极坐标变换展开的优化方法,该方法结合BP神经网络,对实体特征点轨迹进行拟合,从而得到可用于路径规划的点集。仿真实验表明,该方法能够实现对封闭曲线的拟合,转换后的曲线平滑度较好,拟合误差小于直接点轨迹拟合。     

一种超混沌自动转换系统的设计与分析

在一种超混沌系统的基础上,通过改变系统第三个方程中的非线性项的方法,构造了一个新的超混沌系统,并利用常用开关函数来实现超混沌自动转换系统。通过matlab对超混沌系统进行仿真,产生超混沌吸引子,并对其子系统和转换系统Lyapunov指数进行分析与研究,仿真满足超混沌系统产生必要条件。结果表明所设计的自动转换系统可以实现两个超混沌系统的相互转换。     

低谐振频率电磁超材料单元设计与仿真

针对目前人工电磁超材料的谐振频率(吉赫兹(GHz)或太赫兹(THz))较大的问题,该文提出了一种新型尺寸较大的双面螺旋结构单元模型。通过HFSS仿真软件,建立了电磁超材料单元模型,分析了结构单元的S参数。采用Smith提取算法,得出了等效介电常数和等效磁导率的数学表达式。仿真结果表明,在2.0～2.1 MHz时,等效介电常数恒正,等效磁导率实部达到负极值,而等效磁导率的虚部也达到了最大值,即该频段为材料板的谐振频段,呈磁单负材料属性。     

一种K波段电磁超材料的设计及其在微带天线中的应用

根据电磁材料的相关理论,设计出一种由新型谐振器和金属线组成的电磁双负超材料,即介电常数和磁导率同时为负的电磁材料。新型谐振器通过较小谐振腔并联的方式,在较大的单元尺寸下提高了谐振频率,既使该电磁超材料在K波段实现了双负特性,又保证了材料的辐射面积,克服了高频段超材料由于尺寸太小而难以应用的困难。设计出一种K波段的微带天线,将新型谐振器加载在天线上,并用HFSS软件对未加载谐振器和加载谐振器的天线进行仿真对比。仿真结果表明,相比普通天线,加载新型谐振器的微带天线性能得到明显提升,驻波比2 d B以下的带宽增加了58.3%,增益变大,并且由于谐振器对天线副瓣的抑制,提高了天线的方向性。     

一种基于电磁超材料的抗干扰天线

设计了一种基于电磁超材料的抗干扰天线.该抗干扰天线由矩形波导腔体,铺设于波导腔体底部宽边的电磁超材料以及位于波导腔体上部宽边的辐射缝隙构成.当电磁超材料表现为完美电导体时,该抗干扰天线同传统波导缝隙天线类似,可高效辐射电磁波.当电磁超材料表现为完美磁导体时,该抗干扰天线的性能与带阻滤波器相似,可抑制特定频段的干扰电磁波.该抗干扰天线实现了天线与滤波器的高度集成,结构紧凑.仿真与测试结果显示该抗干扰天线在工作频段具有良好的辐射特性,同时对干扰频段电磁波的抑制可达40 dB.     

金属衬底多层各向异性介质电波反射特性研究

通过分析和计算多层各向异性介质的电磁波传输矩阵,导出了金属衬底上多层各向异性介质的电磁波反射系数计算方法,举例验证了该计算方法的正确性.作为一个应用例子,初步分析了金属衬底上各向异性材料的极化转换特性,为复杂电磁材料的电磁散射近似计算提供了理论基础.     

基于J-A磁滞理论的变压器谐波损耗研究

文中提出了一种考虑铁芯铁磁磁滞的变压器电磁暂态模型,仿真研究了谐波存在时变压器的损耗。基于目前工程中应用较为广泛的Jiles-Atherton铁磁磁滞原理建立铁芯磁滞磁化曲线模块,通过设置适合的参数计算得到了与实际测量值较为吻合的B-H曲线;通过分析单相三绕组变压器铁芯绕组结构及其电路模型,得到其电磁暂态计算模型。最后,利用该模型对电力变压器的谐波损耗进行仿真和实验研究,证明了模型的有效性和实用性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.