衬底和氧分压对Cu掺杂ZnO薄膜的结构及光学特性的影响

采用射频磁控溅射方法在玻璃和硅(100)衬底上制备了不同氧分压的Cu掺杂ZnO(ZnO∶Cu)薄膜。利用X射线衍射(XRD)、原子力显微镜(AFM)和光致荧光发光(PL)等表征技术,研究了衬底和氧分压对ZnO∶Cu薄膜的结晶性能和光学特性的影响。结果显示薄膜沉积在Si衬底上比玻璃衬底上有更好c轴择优取向,两种衬底上沉积的薄膜有相同的氧分压结晶规律,且在氧氩比为10∶10时,薄膜c轴取向同时达到最好。通过对光致发光的研究表明,在低氧环境时玻璃衬底较容易制得好的发光薄膜,可在富氧环境时Si衬底上制得的薄膜发光性能较好。     

Optical and structural investigations on spray-deposited CdS films

CdS and indium doped CdS thin films have been prepared by the spray pyrolysis method. The optical band gaps of CdS and doped CdS were found to be 2.35 and 2.39 eV, respectively. The carrier concentration of doped CdS, calculated from an optical method, was found to be 7.5×1018 cm-3. The X-ray diffraction (XRD) analysis revealed that the films were polycrystalline and exhibited hexagonal structure. In order to calculate theoretical XRD intensity values for CdS, the structure factor F(hkl)2 was derived. The temperature correction factor was employed for both Cd and S to correct intensity values. The theoretically calculated XRD intensity values of (hkl) coincided with those of experimental values. © 1998 Kluwer Academic Publishers     

Cu掺杂ZnO纳米粒子的光学性能及铁磁性

利用溶胶凝胶法制备了纳米结构的Cu掺杂ZnO基稀磁半导体,通过X射线衍射分析表明,样品为纯相ZnO纤锌矿结构,磁性测量表明样品在室温下呈室温铁磁性,铁磁性来源为氧化锌晶格中的缺陷与Cu2+离子之间的交换作用。室温光致发光(PL)谱观察到紫外带边和可见光区两个发射峰,且随着Cu掺杂量增加,紫外峰淬灭,可见峰发射增强。     

Optical and structural properties of PbI2 thin films

Lead iodide thin films were fabricated using the spray pyrolysis technique. Milli-Q water and N.N-dimethylformamide were used as solvents under varying deposition conditions. Films as thick as 60 μm were obtained. The optical and structural properties of the samples were investigated using Photoluminescence, Raman scattering, X-ray diffraction, and Scanning electron microscopy. In addition, the study included also the electronic properties which were investigated by measuring the dark conductivity as a function of temperature. The deposition technique seems to be promising for the development of thick films to be used in medical imaging.     

Optical and structural properties of LaF3 thin films

LaF(3) thin films of different thicknesses were deposited on CaF(2) (111) and silicon substrates at a relatively low substrate temperature of 150 degrees C. Optical (transmittance, reflectance, refractive index, and extinction coefficient) and mechanical (morphology and crystalline structure) properties have been investigated and are discussed. It is shown that LaF(3) thin films deposited on CaF(2) (111) substrates are monocrystalline and have a bulklike dense structure. Furthermore, it is presented that low-loss LaF(3) thin films can be deposited not only by boat evaporation but also by electron beam evaporation.     

Optical and magnetic properties of Cu-doped ZnO nanoparticles

Cu-doped ZnO nanoparticles were synthesized by a simple chemical method at low temperature with Cu:Zn atomic ratio from 0 to 5 %. The synthesis process was based on the hydrolysis of zinc acetate dehydrate and copper acetate tetrahydrate heated under reflux to 65 °C using methanol as a solvent. X-ray diffraction (XRD) analysis reveals that the Cu-doped ZnO crystallize in a wurtzite structure with a change of crystal size from 12 nm for undoped ZnO to 5 nm for Cu-doped ZnO. These nano size crystallites of Cu doped ZnO self-organized into microspheres. The XRD patterns, Scanning electron microscopy and transmission electron microscopy micrographs of doping of Cu in ZnO confirmed the formation of microspheres and indicated that the Cu²⁺ is successfully substituted into the ZnO host structure of the Zn²⁺ site. Cu doping shifts the absorption onset to blue from 373 to 350 nm, indicating an increase in the band gap from 3.33 to 3.55 eV. A relative increase in the intensity of the deep trap emission of Cu-doped ZnO is observed when increasing the concentration of Cu. Magnetic measurements indicate that Cu-doped ZnO samples are ferromagnetic at room temperature except pure ZnO.     

Optical and structural study of EB-PVD ZrO2 thin films

The behaviour of the crystalline properties of ZrO₂ films prepared by electron beam physical vapour deposition (EB-PVD) is investigated as a function of their deposition rates. In this paper, the conditions for the preparation of tetragonal zirconia from yttria stabilized zirconia and from monoclinic powder as starting materials are reported. The variation of the crystallite size as a function of the deposition rate is studied and, additionally, the optical characterization that permits to determine the refractive index is presented. The obtained values are in agreement with the bulk ones showing that EB-PVD prepared samples have good performance for optical and protective coatings.     

Optical and structural properties of flash evaporated HgTe thin films

Thin films of HgTe were thermally flash evaporated onto glass and quartz substrates at room temperature. The structural investigations showed that stoichiometric and amorphous films were produced. The transmittance, T, and reflectance, R, of thin films of HgTe have been measured over the wavelength ranges 300–2500 nm. From analysis of the transmittance and reflectance results, the refractive index, n, and the extinction coefficient, k, has been studied. Analysis of the refractive index yields a high frequency dielectric constant, ɛ_∞, and the energy of the effective oscillator, E_o, the dispersion energy, E_d, the covalent value β and the M₋₁ and M₋₃ moments of the imaginary dielectric function of optical spectrum. Also, the dependence of the real part dielectric constant ɛ₁(hν) on its imaginary part ɛ₂(hν) of HgTe films can be used to determine the molecular relaxation time τ, the distribution parameter α^\ and the macroscopic (electronic) relaxation time τ_o. The graphical representations of surface and volume energy loss functions, dielectric constant, the optical conductivity as well as the relaxation time as a function of photon energy revealed three transitions at 0.63, 2.21 and 2.76 eV.     

Optical absorption and structural studies of erbium biphthalocyanine sublimed films

Erbium biphthalocyanine (HErPc₂) thin films are prepared by vacuum deposition at various substrate temperatures. The effects of substrate temperature and film thickness on film morphology, crystalline structure, and optical absorption are studied. The HErPc₂ films exhibit fine-grain morphology and small degree of crystallization at low substrate temperature. The size of the crystallites is enlarged when the film thickness increases. If the substrate temperature is elevated to 100 °C, the HErPc₂ films exhibit a high crystallization, and fibre-like clusters are observed, with orientation mainly parallel to the substrate. The high photoresponse of the HErPc₂ films in the near-infrared (NIR) region presents potential application of rare earth biphthalocyanines as NIR photodetectors.     

Optical and structural properties of solution deposited nickel manganite thin films

Nickel manganite thin films of interest for microbolometer applications have been prepared using chemical solution and spin spray deposition and studied using transmission electron microscopy to quantify the material crystallinity and spectroscopic ellipsometry to extract the complex dielectric function (ε = ε₁ + iε₂) and film microstructure. A parameterization for ε over a spectral range from 0.04 to 5.15 eV has been developed to model well-crystallized nickel manganite, and the visible-range critical point features, infrared vibrations, and optical absorption onset have been identified. A multiple sample analysis structural model and procedure has been developed for spin spray deposited films exhibiting complicated void evolutions with thickness. Variations in ε and crystallite grain size have been observed as a function of film processing and indicate that the optical properties and microstructural information gained from spectroscopic ellipsometry is useful in process monitoring for this material system.     

Optical and structural properties of sol-gel prepared MgZnO alloy thin films

Mg_xZn_1−xO (x = 0-0.5) alloy thin films were prepared by a sol-gel dip-coating method. Mg_0.1Zn_0.9O and Mg_0.5Zn_0.5O films prepared were annealed in the range of 400-900 °C to investigate their thermal stability and temperature-dependent optical properties. The Mg_0.1Zn_0.9O films were thermally stable in the investigated annealing temperature range and exhibited the maximum ultraviolet emission at 800 °C. The segregation of MgO occurred in the Mg_0.5Zn_0.5O films, and the near-band-edge ultraviolet emission of this alloy was enhanced with increasing annealing temperature. The Mg saturation content in the sol-gel prepared MgZnO alloys was found to be about 0.23 where the band gap extended to 3.48 eV.     

Optical, structural and surface characterization of CdO:Mg films

In this work, we have tried to improve some physical properties of CdO films by Mg doping. Ultrasonic spray pyrolysis technique has been used to obtain the films. Thicknesses and refractive indices of the films have been determined by Spectroscopic ellipsometry technique using Cauchy-Urbach model for fitting. Transmission and reflectance spectra have been taken by UV Spectrophotometer, and band gap values have been determined by optical method. X-ray diffraction patterns have been used to study the structural properties. Texture coefficient, grain size and lattice constants have also been determined. AFM images have been taken to see the effect of Mg doping on surface topography and roughness of CdO films. Finally, it has been concluded that Mg doped CdO films (especially at 4%) have improved properties and are good candidates for photovoltaic applications.     

Optical and structural characterization of silver islands films on glass substrates

Metal island films (MIFs) of Ag on glass substrates were fabricated by the e-beam evaporation technique. The dependence of the surface plasmon (SP) absorption properties on the deposition mass thickness and substrate temperature was quantified. The structural and optical characterization of the MIFs, obtained using spectrometry, grazing-incidence small-angle X-ray scattering (GISAXS) and atomic force microscopy (AFM) evidences the evolution of SP characteristics depending on the fabrication parameters: the red shift of the absorption peaks with the increase of deposition thickness accompanied by peak widening and the blue-shift of peaks with the increase of deposition temperature followed by the peak narrowing. These findings were explained by the differences in the concentration, shape and size of the obtained silver islands.     

Optical characterizations of ZnO, SnO2, and TiO2 thin films for butane detection

The optogeometric properties of various sensitive thin films involved in gas sensing applications are investigated by using the m-line technique and atomic force microscopy. Variations of these optical properties are studied under butane and ozone exposure.     

Preparation and properties of p-type transparent conductive Cu-doped NiO films

The NiO-Cu composite films with various Cu contents of 0-18.17 at.% are deposited on a glass substrate. An ultra high electrical resistivity (ρ) is obtained and cannot be detected by a four point probe measurement when the Cu content in the films is lower than 6.97 at.%. The ρ value is reduced significantly to 35.8 Ω-cm as Cu content is increased to 9.18 at.%, and it further decreases to 0.02 Ω-cm when the Cu content further increases to 18.17 at.%. The Hall measurement for all Cu-doped NiO films shows p-type conduction. In addition, the transmittance of NiO films also decreases continuously from 96% to 43% as Cu content increases from 0 to 18.17 at.%. The XRD patterns of Cu-doped NiO films show that only NiO peaks appear and the crystallinity of NiO films degrades as Cu content exceeds 6.97 at.%. A large amount of lattice sites of Ni²⁺ ions in a NiO crystallite is replaced by the Cu⁺ ions that lead to p-type conduction and result in the degradation of crystallinity for NiO-Cu composite films that have a higher Cu content.     

Optical properties of Cu-doped ZnO nanoparticles experimental and first-principles theory research

Zn_1?x Cu _x O nanoparticles were synthesized by using sol–gel method. Structure and optical properties of Zn_1?x Cu _x O nanoparticles were studied experimentally and theoretically. The simulations are based upon the Perdew-Burke-Ernzerhof form of generalized gradient approximation within the density functional theory. The results showed that the UV emission is effectively quenched and the emission in visible-light region is enhanced by Cu-doping, which are theoretically explained to be attributed to the electronic intra-band transition from the occupied bands to the unoccupied ones under irradiation. Therefore, Zn_1?x Cu _x O system may be a potential candidate for photocatalytic in visible light range.     

Optical and structural features of silicon-rich hydrogenated amorphous silicon nitride thin films

A systematic study of fabrication and effect of post-deposition processing on the optical and structural features of silicon-rich hydrogenated amorphous silicon nitride thin films deposited by Hg-sensitized Photo-Chemical Vapour Deposition technique is presented. Both deposition parameters and post-deposition thermal treatment resulted into substantial change in the refractive index associated with the densification of the film. Our studies reveal that the presence of hydrogen and its out-diffusion upon thermal treatment play a crucial role in the overall structural evolution, specially the stabilization of individual phases such as Si and Si3N4. We further report the room-temperature photoluminescence from as-deposited films, which is due to formation of silicon nanostructures in crystalline and amorphous forms. These studies are of great interest from the prospective of commercially viable Si-based technology.     

Study of substrate temperature and copper doping effects on structural,electrical and optical properties of Cu-doped and undoped ZnO thin films

Undoped and Cu-doped ZnO (ZnO:Cu) thin films were prepared using magnetron co-sputtering. Effects of substrate temperature \(T_{s}\) on their structural, electrical and optical properties were comparatively investigated using X-ray diffraction, atom force microscopy, and ultraviolet visible spectrophotometer. ZnO:Cu thin films with different doping content were prepared and studied in order to investigate the effects of Cu-doping content. The results show that all the films exhibit a single phase (002)-oriented hexagonal wurtzite structure. Higher \(T_{s}\) enhances the crystallinity and reduces the compressive stress of the films. Cu-doping and increasing \(T_{s}\) lead to rougher surface and larger granules. The resistivity of both the ZnO and ZnO:Cu films increases with \(T_{s}\). Interestingly, optical band gap \(E_{g}\) of ZnO:Cu films increases significantly with \(T_{s}\), while \(E_{g}\) of undoped film is not obviously influenced by \(T_{s}\). Cu-doping content is an important factor affecting the physical properties of ZnO:Cu thin films. In our experiments, Cu-doping composition sightly decreases with \(T_{s}\) increasing. Cu-doping reduces the resistivity, leads to the red-shift of absorption edge, and narrows \(E_{g}\) of ZnO thin films.     

Optical, structural and electrical properties of Mn doped tin oxide thin films

Mn doped SnO_x thin films have been fabricated by extended annealing of Mn/SnO₂ bilayers at 200°C in air for 110 h. The dopant concentration was varied by controlling the thickness of the metal layer. The overall thickness of the film was 115 nm with dopant concentration between 0 and 30 wt% of Mn. The films exhibit nanocrystalline size (10-20 nm) and presence of both SnO and SnO₂. The highest transmission observed in the films was 75% and the band gap varied between 2.7 and 3.4 eV. Significantly, it was observed that at a dopant concentration of ∼4 wt% the transmission in the films reached a minimum accompanied by a decrease in the optical band gap. At the same value of dopant concentration the resistivity also reached a peak. This behaviour appears to be a consequence of valence fluctuation in Sn between the 2+ and 4+ states. The transparent conductivity behaviour fits into a model that attributes it to the presence of Sn interstitials rather than oxygen vacancies alone in the presence of Sn^{2 +}.