一种PDMS薄膜型微阀的制备与性能分析

通过厚胶光刻工艺在硅片上制备SU-8胶模板，利用该模板制备了高分子聚合物PDMS(Polvdimethvlsiloxane，聚二甲基硅氧烷)微流道和薄膜结构。通过对不同结构的两层PDMS的不可逆粘接得到一种简单的阀结构，在外加气源压力作用下薄膜产生变形实现对微流道的控制。实验测量了微阀的控制气源压力与被控制液体流量之间的关系，说明膜阀的开闭性能良好。根据弹性薄膜的变形理论，对影响微阀性能的参数进行了分析，并提出了几种可行的用于薄膜微阀控制的方法。     

Si基SiC微通道及其制备工艺

提出了一种用于MEMS的硅基SiC微通道(阵列)及其制备方法,它涉及半导体工艺加工硅晶片和化学气相淀积方法制备SiC。在Si(100)衬底上用半导体工艺刻蚀出凹槽微结构,凹槽之间留出台面,凹槽和台面的几何尺寸(深度、宽度、长度)及其分布方式根据需要而定,此凹槽微结构用作制备SiC微通道的模板;用化学气相淀积方法在模板上制备一厚层SiC材料,此层SiC不仅完全覆盖衬底表面的微结构包括凹槽和台面,还在凹槽顶部形成封闭结构,这样就在衬底上形成了以凹槽为模板的SiC微通道(阵列)。对淀积速率与微通道质量之间的关系进行初步分析,发现单纯地提高淀积速率不利于获得高质量的微通道。     

单晶硅微结构表面的制备及其减反射性能北大核心

利用聚苯乙烯胶体微球组装的单层胶体晶体阵列作为掩模板,分别采用反应离子刻蚀和等离子体刻蚀工艺在晶体硅表面构造出不同形态的微纳米结构,并研究不同刻蚀方法和不同刻蚀时间对微结构形态的影响作用。利用分光光度计测试得到微结构表面的反射光谱曲线。结果表明,在0.35-1.1μm太阳光有效吸收波段,单晶硅材料微结构表面的反射率显著降低,由于此时材料的透射率为零,材料在该波段的吸收得到有效增强。同时,具有规则微结构表面的减反射性能比无序微结构表面的减反射性能要更好一些。这为增强单晶硅对太阳能的有效吸收提供了一种简单可行的方法。     

基于PDMS薄膜的微透镜制作方法

提出了一种基于聚二甲基硅氧烷(PDMS)薄膜的软模压印制作微透镜的方法。首先,采用具有钝化层的普通硅片作为基底加工出PDMS薄膜;然后,将薄膜粘于刻有对应孔径的硅模板上,薄膜在负压作用下产生凹陷,滴入快速固化的光固化树脂,固化后得到反向的模具作为制备微透镜结构的母板;最后,通过两次复制模具的方法,在PDMS上得到和母板一致的微透镜。实验测试了微透镜的厚度、焦距和成像效果,结果表明所得微透镜具有良好的表面形貌和聚光效果。这种制作方法可以极大地缩短微透镜的加工时间,并降低成本,为制作微透镜提供了一种简捷的方法。     

MMI微压印模板的设计与研究

微纳米压印技术作为代替传统光刻的一种新兴技术,有着重要的应用潜力。近年来在直接加工微器件如微流体、微生物器件,特别是在微平面光学器件方面得到了较快的发展。采用微压印法直接加工聚合物微平面光学器件是一个具有实用价值和研究价值的课题。该文首先讨论并选取了聚甲基丙稀酸甲酯(PMMA),研究了聚合物多模干涉(MMI)耦合器器件的微压印模板的设计和加工,讨论了压印模板材料的影响。根据典型基于MMI聚合物分光器件模板的设计实例,由聚合物的光学性能和分光要求,设计出模板的几何尺寸,通过微细加工工艺加工出模板,并给出了初步的热压印实验结果。     

准分子激光微加工技术结合模塑技术加工微流控芯片

利用准分子激光微加工技术与模塑技术相结合的方法制造微流控芯片。用准分子激光在玻璃基胶层上刻蚀出加工质量较高的微流控生物芯片形貌,通过电铸技术对微流控芯片进行复制,得到反向金属模具。用金属模具通过注塑成型技术用聚碳酸酯注塑出微流控芯片。系统研究了准分子激光的能量密度和工作台移动速度对胶层微通道加工质量的影响;测量并分析了激光刻蚀加工出的微流控芯片原型、电铸的反向金属模板和注塑成型后的微流控芯片的轮廓精度和表面粗糙度,上表面尺度偏差不大于2μm,底面粗糙度小于20 nm。对注塑出的微流控芯片和激光直写刻蚀的几何结构相同的微流控芯片的流动性能进行比较测试。在流速较小时,用激光微加工技术与模塑技术相结合的方法加工的微通道比准分子激光直写法所加工的微通道流动性能更好。     

IPS Mode应用RM光电特性研究

在负性液晶里加活性单体聚合物经过两次UV制程,制得IPS-RM LCD,通过AOI光学自动检测设备以及DMS光学测量等对获得样品的预倾角、对比度、穿透率进行了测量,并研究了负性液晶加RM后的信赖性。结果表明:加RM后预倾角变小,其暗态亮度降低,对比度提高;经过两次UV光照,RM完全聚合,在配向层表面形成小颗粒聚合物,使液晶配向更加均匀,并得到更强的锚定能,电压保持率提升,直流电压残余降低。     

飞秒激光辅助制备熔石英表面的网格状微流体

报道了一种利用飞秒激光直写后再用化学腐蚀熔石英表面制备得到网格状微流体沟道,然后在其表面覆盖一层PDMS薄膜制备网格状半密闭微流体通道的方法。微流体沟道的形成机制可以定义为飞秒激光辐照导致基底材料改性,而改性区域对HF水溶液的溶解度增强。使用光学显微镜和扫描电子显微镜(SEM)表征了网格状微流体通道的形貌。此外,为了测试该微流体结构的流动特性,进行了液体注入实验。     

自组装法合成导电聚吡咯纳米线

以多孔氧化铝为模板,合成导电聚吡咯纳米线。利用SEM对聚吡咯进行了表征,结果表明:在吡咯单体浓度为0.2 mol/L,电压1.0 V,时间1 600 s的条件下,制得的聚吡咯会有大量的微触手结构出现,且表面光滑,比表面积较大,并初步探究了聚吡咯微触手结构的形成机理。     

热光效应的微流体光波导结构分析

提出了一种基于微流控芯片由热光效应引起的微流体光波导结构。光波导芯层及覆层材料均为微通道中同种不同温度的液体。在微通道的上下面分别设计金属铜电极,在电极两端施加电压,对通道内液体加热。通过液体热传导,使得接近沟道壁边缘层与沟道中间层之间产生由高到低的温度分布。根据液体热光效应,液体在不同温度下折射率不同,沿着通道壁边缘层到通道中间层之间折射率由低到高,实现折射率渐变型平面光波导。电极两端所施加的电压大小及加热时间长短控制微沟道内温度高低,温度的高低决定了液体折射率分布,从而调节光波导实现单/多模传输。这种可调谐光波导结构可望在微流控光学器件中得到应用。     

Theory of orientation textures due to surface energy anisotropies

The effect of surface free energy on the orientation of nuclei on a substrate is examined. In general, the orientation of the nuclei is not determined by minimizing the nucleus-substrate interfacial free energy alone: all interfacial anisotropies must be considered. That orientation preferences should result from anisotropies in the substrate-nucleus interfacial free energies is obvious, but we find that strong orientation effects are present even if this energy is assumed to be independent of the nucleus orientation, provided that the nutrient-nucleus interfacial free energies are anisotropic. Furthermore, varying the magnitude of even an isotropic nucleus-substrate energy will change the orientation of the nuclei. The theory points to some simple rules for prediction of nucleation orientations.     

脉冲YAG激光清洗轮胎模具的实验研究

为了获得激光清洗轮胎模具的工艺参量,采用自主研制的平均功率达250W的脉冲式YAG激光清洗设备开展了轮胎模具激光清洗实验研究。取得了不同激光参量对轮胎模具清洗效果的实验数据,并研究了激光峰值功率、能量密度等参量与轮胎模具清洗速度、清洗效果的关系。结果表明,清洗轮胎模具脉冲YAG激光比CO₂激光更高效;轮胎模具清洗的激光能量密度阈值约为250mJ/mm2,提高激光峰值功率和平均功率能提高清洗速度和清洁效果。此结果为激光清洗设备的研究提供了参考。     

薄膜光探测器绑定点的几何设计与仿真分析

目前,光器件在硅基衬底上的集成是光电领域的研究热点。将基于表面张力的流体自组装技术应用于薄膜金属-半导体-金属（MSM）光探测器的集成上,其集成效果的优劣与器件绑定点的几何形状有关。为了有效预测薄膜MSM光探测器绑定点的间距和形状对集成效果的影响,利用MATLAB对其集成过程中表面自由能的分布状况进行了仿真分析。首先,在介绍薄膜MSM光探测器的基础上,对其集成过程建立了平移和旋转仿真模型。然后,根据表面自由能与匹配度的线性关系,分别仿真出了不同间距和形状的绑定点在集成过程中匹配度的分布状况图。通过分析匹配度的斜率以及正确装配状态和误装配状态之间的关系,预测两端绑定点间距较长、绑定点形状为梯形时集成效果较好。最后,考虑到薄膜光电器件有可能需要区分正负极的情况,将其两端绑定点设计成不对称形状并进行仿真分析,尽量避免集成过程中出现正负极反接的状态。     

A Review of Experimental and Computational Advances in Thermal Boundary Conductance and Nanoscale Thermal Transport across Solid Interfaces

Interfacial thermal resistance is the primary impediment to heat flow in materials and devices as characteristic lengths become comparable to the mean‐free paths of the energy carriers. This thermal boundary conductance across solid interfaces at the nanoscale can affect a plethora of applications. The recent experimental and computational advances that have led to significant atomistic insights into the nanoscopic thermal transport mechanisms at interfaces between various types of materials are summarized. The authors focus on discussions of works that have pushed the limits to interfacial heat transfer and drastically increased the understanding of thermal boundary conductance on the atomic and nanometer scales near solid/solid interfaces. Specifically, the role of localized interfacial modes on the energy conversion processes occurring at interfaces is emphasized in this review. The authors also focus on experiments and computational works that have challenged the traditionally used phonon gas models in interpreting the physical mechanisms driving interfacial energy transport. Finally, the authors discuss the future directions and avenues of research that can further the knowledge of heat transfer across systems with broken symmetries.     

Effect of Wet Pretreatment on Interfacial Adhesion Energy of Cu-Cu Thermocompression Bond for 3D IC Packages

Quantitative analysis of the interfacial adhesion energy of Cu-Cu thermocompression bonds was performed using the four-point bending method with various wet pretreatment conditions. The evaluated interfacial adhesion energies for 1-μm-thick Cu bonding layers were 0.29 J/m², 1.28 J/m², 1.64 J/m², 1.17 J/m², and 0.43 J/m² for different acetic acid pretreatment times of 0 min, 1 min, 5 min, 10 min, and 15 min, respectively. There exists an optimum wet etch time for maximum adhesion strength. The change of surface properties with increasing wet etch time was believed to result in the variation of the interfacial adhesion energy. The decrease in interfacial adhesion energy after 5 min seems to result from a decrease in the plastic dissipation energy during interfacial crack propagation with thinner Cu film thickness caused by overetching.     

Ball Impact Reliability of Zn-Sn High-Temperature Solder Joints Bonded with Different Substrates

In this study, the high-speed deformation behavior of solder joints formed with Pb-free Zn-Sn and commercial Pb-Sn alloys bonded on different substrates was investigated by the ball impact test method. Overall, Zn-Sn joints exhibited greater impact strength but inferior impact toughness than Pb-Sn joints. This can be ascribed to the high hardness of Zn-Sn solders resulting in partial or overall interfacial fracture. In contrast, the joints with soft Pb-Sn solders all showed a ductile fracture feature. It is suggested that, for the joints revealing brittle fracture, the impact toughness (impact energy) increased with the plastic ability of interfacial intermetallic compounds, while for those showing a ductile fracture mode, the impact energy deteriorated with a hardened solder matrix resulting from substrate dissolution.     

Energy‐Level Alignment at the Organic/Electrode Interface in Organic Optoelectronic Devices

It is commonly believed that the work‐function reduction effect of the cathode interfacial material in organic electronic devices leads to better energy‐level alignment at the organic/electrode interface, which enhances the device performance. However, there is no agreement on the exact dipole direction in the literature. In this study, a peel‐off method to reveal the buried organic/metal interface to examine the energy‐level alignment is developed. By splitting the device at different interfaces, it is discovered that oppositely oriented dipoles are formed at different surfaces of the interfacial layer. Moreover, the function of the electrode interface differs in different device types. In organic light‐emitting diodes, the vacuum‐level alignment generally occurs at the organic/cathode interface, while in organic photovoltaic devices, the Fermi‐level pinning commonly happens. Both are determined by the integer charge‐transfer levels of the organic materials and the work‐function of the electrode. As a result, the performance enhancement by the cathode interfacial material in organic photovoltaic devices cannot be solely explained by the energy‐level alignment. The clarification of the energy‐level alignment not only helps understand the device operation but also sets up a guideline to design the devices with better performance.     

Effects of dimple and metal coating on interfacial adhesion in plastic packages

This paper reports on the effects of dimple and metallic coating of the Cu-alloy lead frame on interfacial adhesion with an epoxy-molding compound. Round dimples of varying number are introduced on one side of the lead frame by chemical etching. The plating materials studied include bare-Cu alloy and microetched Cu, Ag, Ni, Pd/Ni, and Au/Ni coatings. The surface characteristics, such as wettability, surface roughness, and element compositions, were evaluated based on several characterization tools, which, in turn, are correlated with adhesion performance. The dimples enhanced the interfacial-bond strengths through improved mechanical interlocking of the molding compound, depending on the type of coating. The improvement was much more significant for the coatings with inherently weak interfacial adhesion (e.g., microetched Cu and Ni coating) than those with inherently strong adhesion characteristics (e.g., Au and Pd coatings). The wettability of the metal surface represented by the surface energy or interfacial energy played a dominant role in the resulting interfacial adhesion. Elemental analysis of the fracture surface indicates that the silicon content had roughly a linear relationship with the interfacial-bond strengths for different coatings. The surface roughness was insensitive to the interfacial-adhesion performance. The silicon content measured from the lead-frame fracture surface was shown to directly correlate to the interfacial-bond strength. Higher silicon content was a reflection of larger surface-area coverage by the molding compound associated with cohesive failure.     

Study on the internal conversion dynamics following different electron transfer at a donor/acceptor polymer heterointerface

By constructing a donor/acceptor (D/A) polymer heterointerface, we theoretically study the internal conversion (IC) dynamics following different electron transfer at the D/A interface in the framework of a tight-binding model combined with a nonadiabatic evolution method. We find that different higher-lying charge-transfer (CT) states can form at the D/A interface with the natures determined by the transferred electron energy. As compared with the lowest-lying CT state, these higher-lying CT states are spatially more delocalized and energetically more prone to separate into free charges. By simulating the IC relaxation dynamics of these higher-lying CT states, we find that their timescales are closely related to the transferred electron energy, as well as the D/A interfacial electronic structure. In addition, considering that the IC relaxation dynamics is vibrationally assisted, effect of the vibrational damping on the process is discussed. These researches should be of crucial importance for further understanding the photovoltaic process at a D/A polymer heterointerface, especially the “hot CT mechanism” experimentally suggested to explain the highly efficient charge separation in high-performing D/A polymer solar cells.