共查询到19条相似文献,搜索用时 98 毫秒
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通过优化张应变量子阱外延结构和设计线列阵双沟道深隔离槽腐蚀工艺,采用低压金属有机化学气相沉积法(LP-MOCVD)生长了GaAsP/GalnP/AlGaInP单量子阱分别限制异质结激光器材料,并利用该材料制备r填充因子为50%的lcm宽线列阵激光巴条,用扫描电子显微镜(SEM)分析了隔离槽的形貌.在准连续工作条件(200μs脉宽,2%占空比)下,封装在被动制冷标准铜热沉上的器件在测试设备允许的最大驱动电流300A时可获得259W的输出功率,未观察到腔面光学灾变性损伤的发生.最高功率转换效率在工作电流为104A时达52%,此时输出功率为100W,激射光谱的中心波长为807.8nm,半高宽为2.4nm,快慢轴远场发散角分别为29.3°和7.5°. 相似文献
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分析了影响列阵半导体激光器输出功率的因素。利用分子束外延生长方法生长出InGaAs/GaAs应变量子阱激光器材料。利用该材料制作出的应变量子阱列阵半导体激光器准连续(100Hz,100μs)输出功率达到80W(室温),峰值波长为978-981nm。 相似文献
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940nm列阵窗口半导体激光器 总被引:1,自引:1,他引:0
本文分析了影响列阵半导体激光器输出功率的因素。利用分子束外延生长方法生长出InGaAs/GaAs应变量子阱激光器材料。利用该材料制作出的应变量子阱列阵窗口半导体激光器,准连续(500μs,100Hz)输出功率达到80W(室温),峰值波长为939-941nm。 相似文献
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晓晨 《激光与光电子学进展》2000,(6)
亚利桑那光功率公司从一个单片二极管激光列阵获得240W、930nm最高输出功率。1cm宽的列阵总发射孔径为4800μm,填充因子为70%,装在多扩散层铜散热片上,用20°C水冷却,用240A驱动电流时可提供240W输出功率。公司还从类似的125A驱动电流时发射115W连续波的808nm列阵中获得最高功率密度。该列阵的发射孔径为2600μm,填充因子为26%,用温度为20°C的冷却液工作。目前虽没有可靠数据,但商品化改进型作为高功率固态激光器的抽运组件在材料加工、医学应用中颇具吸引力。240W连续波二极管列阵@晓晨… 相似文献
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808nm大功率连续半导体激光器研究 总被引:2,自引:1,他引:1
利用金属有机化学气相淀积(MOCVD)技术,生长了AlGaInAs/AlGaAs分别限制压应变单量子阱材料,利用该材料制成3mm宽、填充因子20%的半导体激光器阵列(版型100μm/500μm,6个发光单元),通过腔面反射率设计确定了最佳反射率,采用CS载体标准封装。在输入电流8A、水冷19℃条件下测试,输出功率达到8.4W,阈值电流为1.8A,斜率效率为1.26W/A,功率转换效率为59.4%,波长为805.7nm,光谱半宽为1.8nm;输入电流12A时,输出功率达到13W,斜率效率为1.22W/A,功率转换效率为58.9%,波长为807.9nm,光谱半宽为2.0nm。 相似文献
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准连续17 kW 808 nm GaAs/AlGaAs叠层激光二极管列阵 总被引:4,自引:5,他引:4
高功率激光二极管列阵广泛应用于抽运固体激光器.报道了17 kW GaAs/AlGaAs叠层激光二极管列阵的设计、制作过程和测试结果.为了提高器件的输出功率,一方面采用宽波导量子阱外延结构,降低腔面光功率密度,提高单个激光条的输出功率,通过金属有机物化学气相沉积(MOCVD)方法进行材料生长,经过光刻、金属化、镀膜等工艺制备1 cm激光条,填充密度为80%,单个激光条输出功率达100 W以上;另一方面器件采用高密度叠层封装结构,提高器件的总输出功率,实现了160个激光条叠层封装,条间距0.5 mm.经测试,器件输出功率达17kW,峰值波长为807.6 nm,谱线宽度为4.9 nm. 相似文献
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高饱和电流14xx nm应变量子阱激光器的研制 总被引:1,自引:1,他引:1
报道了14xx nm应变量子阱(SQW)激光器管芯的研制成果。通过金属有机化学气相沉积(MOCVD)生长工艺生长14xx nm AlGaInAs/AlInAs/InP应变量子阱外延片,采用带有锥形增益区的脊型波导结构制作激光器管芯。生长好的外延片按照双沟脊型波导激光器制备工艺进行光刻、腐蚀,制作P面电极(溅射 TiPtAu)、减薄、制作N面电极(蒸发AuGeNi),然后将试验片解理成Bar;为获得高的单面输出功率,用电子回旋共振等离子体化学气相沉积(ECR)进行腔面镀膜,HR=90%,AR=5%;解理成的管芯P面朝下烧结到铜热沉上,TO3封装后在激光器综合测试仪进行测试。管芯功率达到440 mW以上,饱和电流3 A以上,峰值波长1430 nm,远场发散角为40°×14°。 相似文献
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Wada O. Yamakoshi S. Sanada T. Fujii T. Horimatsu T. Sakurai T. 《Electronics letters》1984,20(22):936-937
An AlGaAs/GaAs graded-index-waveguide separate-confinement-heterostructure (GRIN-SCH) single-quantum-well (SQW) laser has been monolithically integrated with a couple of field-effect-transistor drivers on a semi-insulating GaAs substrate. The adoption of the GRIN-SCH SQW laser has enabled an improvement in the laser/FET performance, exhibiting a low laser threshold current (12 mA) and a high sensitivity of the output light power to the input gate voltage (7.5 mW/facet/V). 相似文献
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I. Pollentier L. Buydens P. Van Daele P. Demeester 《Photonics Technology Letters, IEEE》1991,3(2):115-117
The epitaxial liftoff (ELO) of a GaAs-AlGaAs graded-index separate-confinement-heterostructure (GRIN-SCH) single-quantum-well (SQW) laser diode and the subsequent transfer to a Si substrate are described. It is the first time that a layer structure containing Al/sub 0.60/Ga/sub 0.40/As has been lifted off, and the 5- mu m thin film was cleaved after ELO by a novel process, called wedge-induced facet cleaving (WFC). The pulsed operation performance of the ELO WFC laser was similar to that of conventionally processed GRIN-SCH SQW lasers. These results hold promise for integrating III-V short-cavity lasers on arbitrary substrates.<> 相似文献
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Nagarajan R. Fukushima T. Bowers J.E. Geels R.S. Coldren L.A. 《Electron Devices, IEEE Transactions on》1991,38(12):2689-2690
Summary form only given. The authors report damping factors an order of magnitude lower than previously reported for SQW lasers. They also report bandwidths of 15 GHz obtained in SQW (single quantum well) lasers as a result of proper design of the quantum-well structure. The laser samples were grown on (100) n-type GaAs by molecular beam epitaxy (MBE). The SQW lasers had a minimum broad area threshold of 125 A/cm2. A self-aligned technique was used to fabricate the narrow-ridge waveguide lasers. The ridges were dry-etched using Cl2 . A model was developed that quantitatively explains the large enhancement in the dynamic response in the SQW lasers compared to those reported previously. This leads to an optimal design of quantum-well lasers for large-modulation bandwidths 相似文献
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Nobuhara H. Kuno M. Makiuchi M. Fujii T. Wada O. 《Quantum Electronics, IEEE Journal of》1987,23(2):160-163
An AlGaAs/GaAs one-chip optoelectronic integrated transmitter with an inner mirror facet laser has been fabricated, and stable CW, high-speed operation has been demonstrated. The successful results obtained are mainly due to a low threshold current of the integrated laser, a graded index waveguide separate confinement heterostructure single quantum well (GRIN-SCH SQW) laser with a microcleaved facet (MCF) of good quality. 相似文献
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本文介绍了用分子束外延法制作的梯度折射率分别限制式单量子阱GaAs/AlGaAs半导体激光器。该器件具有较低的阈值电流密度和单模运转特性,连续输出功率可达55mw。 相似文献
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Zmudzinski C.A. Zory P.S. Lim G.G. Miller L.M. Beernink K.J. Cockerill T.L. Coleman J.J. Hong C.S. Figueroa L. 《Photonics Technology Letters, IEEE》1991,3(12):1057-1060
Differential gain (g ') of bulk and single-quantum-well (SQW) lasers was determined from threshold current density and differential quantum efficiency measurements. The threshold measurement technique was used to show that g ' is a function of cavity length (L ) in SQW lasers and independent of L in bulk lasers. It was found that g ' of long SQW lasers (1000 μm) is about 7×10-16 cm2 , approximately two times that of bulk lasers. At short cavity lengths (250 μm), g ' is about the same for both laser types 相似文献
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We demonstrate here 1.2-μm laser emission from a GaAsP-InGaAs strain compensated single-quantum-well (SQW) diode. This development enables the fabrication of vertical-cavity surface-emitting lasers for optical interconnection through Si wafers. Strain compensation and low temperature growth were used to extend the wavelength of emission to the longest yet achieved on a GaAs substrate in this materials system. The minimum threshold density achieved was 273.4 A/cm2 at a cavity length of 610 μm. We have also demonstrated an 1.144-μm lasing wavelength in a 820-μm-long cavity on a GaAs substrate with a strained InGaAs-GaAs SQW laser for comparison using a low-temperature metal-organic chemical vapor deposition growth technique. The threshold current density for a 590-μm-long cavity under CW operation was 149.7 A/cm2 相似文献
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The use of a strained superlattice buffer (SSLB) layer composed of a short-period (InGaAs)(GaAs) superlattice in a lattice-matched AlGaAs/GaAs system in order to reduce the internal stress is discussed. A five-times-higher photoluminescence peak intensity has been observed from a single quantum well (SQW) with the SSLB than without the SSLB. A high-quantum efficiency, a small cavity loss, and high-output power operation have been achieved in a narrow ridge-waveguide 770-nm graded-index-separate confinement heterostructure SQW laser diode with the SSLB.<> 相似文献