Low-power network-on-chip for high-performance SoC design

An energy-efficient network-on-chip (NoC) is presented for possible application to high-performance system-on-chip (SoC) design. It incorporates heterogeneous intellectual properties (IPs) such as multiple RISCs and SRAMs, a reconfigurable logic array, an off-chip gateway, and a 1.6-GHz phase-locked loop (PLL). Its hierarchically-star-connected on-chip network provides the integrated IPs, which operate at different clock frequencies, with packet-switched serial-communication infrastructure. Various low-power techniques such as low-swing signaling, partially activated crossbar, serial link coding, and clock frequency scaling are devised, and applied to achieve the power-efficient on-chip communications. The 5 /spl times/5 mm/sup 2/ chip containing all the above features is fabricated by 0.18-/spl mu/m CMOS process and successfully measured and demonstrated on a system evaluation board where multimedia applications run. The fabricated chip can deliver 11.2-GB/s aggregated bandwidth at 1.6-GHz signaling frequency. The chip consumes 160 mW and the on-chip network dissipates less than 51 mW.     

A 10-Gb/s 16:1 multiplexer and 10-GHz clock synthesizer in0.25-μm SiGe BiCMOS

A 10-Gb/s 16:1 multiplexer, 10-GHz clock generator phase-locked loop (PLL), and 6 × 16 b input data buffer are integrated in a 0.25-μm SiGe BiCMOS technology. The chip multiplexes 16 parallel input data streams each at 622 Mb/s into a 9.953-Gb/s serial output stream. The device also produces a 9.953-GHz output clock from a 622- or 155-MHz reference frequency. The on-board 10-GHz voltage-controlled oscillator (VCO) has a 10% tuning range allowing the chip to accommodate both the SONET/SDH data rate of 9.953 Gb/s and a forward error correction coding rate of 10.664 Gb/s. The 6 × 16 b input data buffer accommodates ±2.4 ns of parallel input data phase drift at 622 Mb/s. A delay-locked loop (DLL) in the input data buffer allows the support of multiple input clocking modes. Using a clock generator PLL bandwidth of 6 MHz, the 9.953-GHz output clock exhibits a generated jitter of less than 0.05 UI_P-P over a 50-kHz to 80-MHz bandwidth and jitter peaking of less than 0.05 dB     

A 2.5-Mb/s GFSK 5.0-Mb/s 4-FSK automatically calibratedΣ-Δ frequency synthesizer

This paper describes a new sigma-delta (Σ-Δ) frequency synthesizer for Gaussian frequency and minimum shift keying (GFSK/GMSK) modulation. The key innovation is an automatic calibration circuit which tunes the phase-locked loop (PLL) response to compensate for process tolerance and temperature variation. The availability of this new calibration method allows the use of precompensation techniques to achieve high data rate modulation without requiring factory calibration. The calibration method can be applied to GFSK/GMSK modulation and also M-ary FSK modulation. The PLL, including 1.8-GHz voltage controlled oscillator (VCO), Σ-Δ modulator, and automatic calibration circuit, has been implemented in a 0.6-μm BiCMOS integrated circuit. The test chip achieves 2.5 Mb/s using GFSK and 5.0 Mb/s using 4-FSK     

A 2-V, 1.8-GHz BJT phase-locked loop

This paper describes the design of a bipolar junction transistor phase-locked loop (PLL) for ΣΔ fractional-N frequency-synthesis applications. Implemented in a 0.8-μm BiCMOS technology, the PLL can operate up to 1.8 GHz while consuming 225 mW of power from a single -2-V supply. The entire LC-tuned negative-resistance variable-frequency oscillator is integrated on the same chip. A differential low-voltage current-mode logic circuit configuration is used in most of the PLL's functional blocks to minimize phase jitter and achieve low-voltage operation. The multimodulus frequency divider is designed to support multibit digital modulation. The new phase and frequency detector and loop filter contain only npn transistors and resistors and thus achieve excellent resolution in phase comparison. When phase locked to a 53.4-MHz reference clock, the measured phase noise of the 16-GHz output is -91 dBc/Hz at 10-kHz offset. The frequency switching time from 1.677 to 1.797 GHz is 150 μs. Die size is 4300×4000 μm², including the passive loop filter     

A 2.4-GHz monolithic fractional-N frequency synthesizer with robust phase-switching prescaler and loop capacitance multiplier

The design of a 2.4-GHz fully integrated /spl Sigma//spl Delta/ fractional-N frequency synthesizer in a 0.35-/spl mu/m CMOS process is presented. The design focuses on the prescaler and the loop filter, which are often the speed and the integration bottlenecks of the phase-locked loop (PLL), respectively. A 1.5-V 3-mW inherently glitch-free phase-switching prescaler is proposed. It is based on eight lower frequency 45/spl deg/-spaced phases and a reversed phase-switching sequence. The large integrating capacitor in the loop filter was integrated on chip via a simple capacitance multiplier that saves silicon area, consumes only 0.2 mW, and introduces negligible noise. The synthesizer has a 9.4% frequency tuning range from 2.23 to 2.45 GHz. It dissipates 16 mW and takes an active area of 0.35 mm/sup 2/ excluding the 0.5-mm/sup 2/ digital /spl Sigma//spl Delta/ modulator.     

A low spur, low jitter 10-GHz phase-locked loop in 0.13-μm CMOS technology

This paper presents a 10-GHz low spur and low jitter phase-locked loop (PLL).An improved low phase noise VCO and a dynamic phase frequency detector with a short delay reset time are employed to reduce the noise of the PLL.We also discuss the methodology to optimize the high frequency prescaler's noise and the charge pump's current mismatch.The chip was fabricated in a SMIC 0.13-μm RF CMOS process with a 1.2-V power supply.The measured integrated RMS jitter is 757 fs (1 kHz to 10 MHz); the phase noise is -89 and-118.1 dBc/Hz at 10 kHz and 1 MHz frequency offset,respectively; and the reference frequency spur is below -77 dBc.The chip size is 0.32 mm2 and the power consumption is 30.6 mW.     

A fully integrated 1.5-V 5.5-GHz CMOS phase-locked loop

A 1.5-V 5.5-GHz fully integrated phase-locked loop (PLL) has been implemented in a 0.25-μm foundry digital CMOS process. From a 5.5-GHz carrier, the in-band phase noise can be as low as -88 dBc/Hz at a 40-kHz offset, while the phase noise for the free-running VCO is -116 dBc/Hz at an 1-MHz offset. The VCO core current is 4.6 mA. The prescaler is implemented using a variation of the source-coupled logic (SCL) structure to reduce the switching noise, and thus to reduce the PLL side-band spurs. At -18 dBm signal power measured off chip, the switching noise coupled through substrate and metal interconnect generates spurs with power levels less than -99 dBm when the loop is open. A new charge-pump circuit is developed to reduce the current glitch at the output node. By incorporating a voltage doubler, the voltage dynamic range at the charge-pump output and thus the VCO control voltage range is increased from 1.3 to 2.6 V with immeasurable phase noise and spurious level degradation to the PLL. When the loop is closed, the power levels of side-band spurs at the offset frequency equal to the ~43-MHz reference frequency are < -69 dBc. The total power consumption of the PLL including that for the output buffers is ~23 mW     

宽带低相噪频率综合器设计与实现

为满足某雷达信号设计要求,文中基于国产小数锁相环芯片GM4704产生7.12～9.12 GHz的信号,采用传统的PLL方式产生,低相位噪声、低杂散的频率综合器。同时,给出了设计过程并对相关的设计参数进行分析,应用相关的PLL仿真软件对环路滤波器进行仿真设计,通过实际电路测试,相位噪声达到-97 dBc/Hz@1 kHz与理论计算较接近,杂散达到-70 dB。     

Modeling, design and characterization of a new low-jitter analog dual tuning LC-VCO PLL architecture

This paper describes the modeling, design, and characterization of a low-jitter 2.4-GHz LC-VCO PLL architecture realized in a standard 0.12-/spl mu/m CMOS technology. It features an analog dual control loop for fine and coarse VCO tuning that allows very low VCO gain (60 MHz/V) for noise rejection while maintaining a wide tuning range. The coarse input of the VCO is driven by an analog circuit that adjusts the VCO gain in a continuous manner. Measurements demonstrate an integrated jitter of 0.74 ps that is 43% lower compared to results from a standard PLL topology (STD PLL) with a single control loop. The PLLs have the same bandwidth and output frequency range and were built on the same wafer for comparison. The circuit area of the proposed LC-VCO PLL is 0.7 mm/sup 2/ and the power consumption is 32 mW. The area and power consumption of the proposed LC-VCO PLL are less than 1% larger compared to the STD PLL.     

A Silicon 60-GHz Receiver and Transmitter Chipset for Broadband Communications

A 0.13-mum SiGe BiCMOS double-conversion superheterodyne receiver and transmitter chipset for data communications in the 60-GHz band is presented. The receiver chip includes an image-reject low-noise amplifier (LNA), RF-to-IF mixer, IF amplifier strip, quadrature IF-to-baseband mixers, phase-locked loop (PLL), and frequency tripler. It achieves a 6-dB noise figure, -30 dBm IIP3, and consumes 500 mW. The transmitter chip includes a power amplifier, image-reject driver, IF-to-RF upmixer, IF amplifier strip, quadrature baseband-to-IF mixers, PLL, and frequency tripler. It achieves output P_1dB of 10 to 12dBm, P_sat of 15 to 17 dBm, and consumes 800 mW. The chips have been packaged with planar antennas, and a wireless data link at 630 Mb/s over 10 m has been demonstrated     

GaAs-Monolithic IC's for an X-Band PLL-Stabilized Local Source

X-band GaAs-monolithic voltage controlled-oscillator (VCO), divide-by-four analog frequency divider, and Wilkinson power splitter have been developed for frequency stabilization of an X-band Iocal source in a phase-locked loop (PLL) system.The VCO has a series feedback configuration and utilizes an optimized design procedure to yield the highest dc-RF efficiency ever reported for a GaAs-monolithic FET oscillator. The frequency divider has a novel structure which applies a dual-gate FET mixer and two RC-coupled FET amplifier stages to establish a closed loop for generating a 1/4 subharmonic component of an input frequency. The Wilkinson power splitter consists of an isolation resistor and two quarter-wavelength lines, which have been realized in both meander and spiral forms. A VCO-driven frequency divider system incorporating these IC's consumes 380-mW total power to provide the 1/4 subharmonic component of the VCO frequency with more than 3-dBm output power over a 10.86-- 11.01-GHz range.     

应用于2Mb/s GMSK调制的CMOS低功耗全差分Sigma-Delta频率综合器

设计了应用于GMSK调制,工作在2.4GHz,CMOS全差分的∑-△频率综合器.调制器中采用预补偿的分数N锁相环.推导了Ⅱ型三阶锁相环的传输函数,并指出影响环路传输函数的重要参数.介绍了校准重要的环路参数的方法.锁相环设计中采用差分调节的LC压控振荡器和全差分的电荷泵.设计的电路利用0.18μm 1P6M CMOS工艺进行仿真.由于锁相环的组成模块中采用了低功耗设计,锁相环的功耗仅为11mW左右,调制器的数据率达到2Mb/s.     

An ultralow power CMOS/SIMOX programmable counter LSI

We designed and fabricated an extremely low-power CMOS/SIMOX programmable counter large scale integrated circuits (LSI) for high-speed phase-locked loop (PLL) frequency synthesizer applications. This was to verify the potential usefulness of ultrathin-film 0.24-μm-gate CMOS/SIMOX process technology for creating an extremely low-power LSI containing high-speed circuits operating at frequencies of at least 1 GHz and at low supply voltages. While operating at up to 2.2 GHz and consuming only 4.5 mW at 1.5 V, it is capable of 4-GHz performance with power consumption of 19 mW at 2.5 V. Even at a low supply voltage of 1.5 V, high input-sensitivity was also achieved in the 1- to 2-GHz frequency range. These low-power and high input-sensitivity characteristics outperform those of state-of-the-art BiCMOS PLL LSIs     

A CMOS frequency synthesizer with an injection-locked frequencydivider for a 5-GHz wireless LAN receiver

A fully integrated 5-GHz phase-locked loop (PLL) based frequency synthesizer is designed in a 0.24 μm CMOS technology. The power consumption of the synthesizer is significantly reduced by using a tracking injection-locked frequency divider (ILFD) as the first frequency divider in the PLL feedback loop. On-chip spiral inductors with patterned ground shields are also optimized to reduce the VCO and ILFD power consumption and to maximize the locking range of the ILFD. The synthesizer consumes 25 mW of power of which only 3.8 mW is consumed by the VCO and the ILFD combined. The PLL has a bandwidth of 280 kHz and a phase noise of -101 dBc/Hz at 1 MHz offset frequency. The spurious sidebands at the center of adjacent channels are less than -54 dBc     

一种C波段小步进捷变频频率综合器的设计

本文介绍了一种小步进、低相噪、低杂散、捷变频锁相频率综合器的设计与实现,本设计选用超低相噪锁相环芯片,采用小数分频实现小步进,通过双锁相环“乒乓”工作实现捷变频,经过对环路参数的精心设计,较好的实现了相位噪声、杂散等技术指标。     

A 1.8-GHz Spur-Cancelled Fractional-N Frequency Synthesizer With LMS-Based DAC Gain Calibration

A 1.8-GHz wideband DeltaSigma fractional-N frequency synthesizer achieves the phase noise performance of an integer-N synthesizer using a spur-cancellation digital-to-analog converter (DAC). The DAC gain is adaptively calibrated with a least-mean-square (LMS) sign-sign correlation algorithm for better than 1% DAC and charge pump (CP) gain matching. The proposed synthesizer phase-locked loop (PLL) is demonstrated with a wide 400-kHz loop bandwidth while using a low 14.3-MHz reference clock, and offers a better phase noise and bandwidth tradeoff. Using an 8-bit gain-calibrated DAC, DeltaSigma-shaped divider ratio noise is suppressed by as much as 30 dB. The second-order DeltaSigma fractional-N PLL exhibits in-band and integrated phase noises of -98 dBc/Hz and 0.8deg. The chip, fabricated in 0.18-mum CMOS, occupies 2 mm², and consumes 29 mW at 1.8-V supply. The spur cancellation and correlation function consumes 30% additional power     

A 6-GHz integrated phase-locked loop using AlGaAs/GaAsheterojunction bipolar transistors

A fully integrated 6-GHz phase-locked-loop (PLL) fabricated using AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is described. The PLL is intended for use in multigigabit-per-second clock recovery circuits for fiber-optic communication systems. The PLL circuit consists of a frequency quadrupling ring voltage-controlled oscillator (VCO), a balanced phase detector, and a lag-lead loop filter. The closed-loop bandwidth is approximately 150 MHz. The tracking range was measured to be greater than 750 MHz at zero steady-state phase error. The nonaided acquisition range is approximately 300 MHz. This circuit is the first monolithic HBT PLL and is the fastest yet reported using a digital output VCO. The minimum emitter area was 3 μm×10 μm with f_t=22 GHz and f_max=30 GHz for a bias current of 2 mA. The speed of the PLL can be doubled by using 1-μm×10-μm emitters in next-generation circuits. The chip occupies a die area of 2-mm×3-mm and dissipates 800 mW with a supply voltage of -8 V     

一种宽带低相噪频率合成器的设计方法研究

提出了一种宽带低相噪频率合成器的设计方法.采用了数字锁相技术,该锁相技术主要由锁相环（phase locked loop,PLL）芯片、有源环路滤波器、宽带压控振荡器和外置宽带分频器等构成,实现了10~20 GHz范围内任意频率输出,具有输出频率宽、相位噪声低、集成度高、功耗低和成本低等优点.最后对该PLL电路杂散抑制和相位噪声的指标进行了测试,测试结果表明该PLL输出10 GHz时相位噪声优于-109 dBc/Hz@1 kHz,该指标与直接式频率合成器实现的指标相当.     

一种应用于阵列TDC的低抖动锁相环设计

传统的PLL（Phase Locked Loop）电路受限于环路参数的选定,其相位噪声与抖动特性已经难以满足大阵列、高精度TDC（Time-to-Digital Converter）的应用需求.本文致力于PLL环路带宽的优化选取,采取TSMC 0.35μm CMOS工艺实现了一款应用于TDC的具有低抖动、低噪声特性的锁相环（Phase Locked Loop,PLL）电路,芯片面积约为0.745mm×0.368mm.实际测试结果表明,在外部信号源输入15.625MHz时钟信号的条件下,PLL输出频率可锁定在250.0007MHz,频率偏差为0.7kHz,输出时钟占空比为51.59%,相位噪声为114.66dBc/Hz@1MHz,均方根抖动为4.3ps,峰峰值抖动为32.2ps.锁相环的相位噪声显著降低,输出时钟的抖动特性明显优化,可满足高精度阵列TDC的应用需要.     

基于电感电容振荡器的电荷泵锁相环的设计

设计并实现了一种采用电感电容振荡器的电荷泵锁相环,分析了锁相环中鉴频/鉴相器(PFD)、电荷泵(CP)、环路滤波器(LP)、电感电容压控振荡器(VCO)的电路结构和设计考虑。锁相环芯片采用0.13μm MS&RF CMOS工艺制造。测试结果表明,锁相环锁定的频率为5.6～6.9 GHz。在6.25 GHz时,参考杂散为-51.57 dBc;1 MHz频偏处相位噪声为-98.35 dBc/Hz;10 MHz频偏处相位噪声为-120.3 dBc/Hz;在1.2 V/3.3 V电源电压下,锁相环的功耗为51.6 mW。芯片总面积为1.334 mm2。