16 Gbit/s multiplexer IC using double mesa Si/SiGe heterojunction bipolar transistors

A double mesa Si/SiGe heterojunction bipolar transistor (HBT) was developed for application in integrated circuits. The HBT is characterised by an emitter base heterojunction and consequently by a high base doping concentration. By using these transistors an integrated digital circuit, a multiplexer, was implemented. The measured bit rate of this first Si/SiGe HBT circuit was 16 Gbit/s.<>     

Over 40 Gbit/s 16:1 multiplexer IC using InP/InGaAs HBT technology

A low-power 16:1 multiplexer (MUX) IC using undoped-emitter InP/InGaAs heterojunction bipolar transistors (HBTs) has been successfully designed and fabricated. To minimise power consumption, the collector current density of each HBT was optimised taking into account the required operating speed and the number of fan-outs. Up to 47 Gbit/s error-free operation was confirmed with low power consumption of about 3.2 W. These results demonstrate that InP/InGaAs HBT technology is attractive for fabricating over 40 Gbit/s, low-power medium-scale-integration (MSI) circuits.     

16 Gbit/s fibre transmission experiment using optical time-division multiplexing

An experimental four-channel optical time-division multiplexed transmission system is described, and the first demonstration of fibre transmission at a bit rate of 16Gbit/s is reported. In this experiment, data at 16Gbit/s have been transmitted over 8 km of fibre with a bit error rate below 10-9.     

1 Tbit/s km transmission experiment at 16 Gbit/s using conventional fibre

Describes a single-channel optical transmission experiment that achieved a bit rate-distance product of 1 Tbit/s km over conventional (non-dispersion-shifted) fibre. The transmitter was a directly modulated, 1.3 mu m-wavelength, distributed feedback laser. The receiver employed a semiconductor optical preamplifier and a high-impedance pinHEMT front-end.<>     

25 Gbit/s decision circuit, 34 Gbit/s multiplexer, and 40 Gbit/s demultiplexer IC in selective epitaxial Si bipolar technology

A 25 Gbit/s decision circuit, a 34 Gbit/s multiplexer, and a 40 Gbit/s demultiplexer IC have been realised with selective epitaxial silicon bipolar technology using 0.8 mu m lithography. The data rates achieved are the highest values reported for these types of circuit in any IC technology.<>     

A versatile ECL multiplexer IC for the Gbit/s range

A new approach to digital multiplexing for communication systems operating in the Gbit/s range is presented. With a single function, monolithically integrated in the established silicon bipolar process, many operations required by the communication system's multiplex equipment are achieved at data rates of up to 3 Gbits/s. The IC is a four-channel multiplexer designed to interface readily with ECL families. Demonstrations of the ICs performance include pseudorandom pattern generation by multiplexing ECL inputs up to 2 Gbits/s, demultiplexing into ECL registers at 1 Gbits/s, clock extraction in a 560 Mbit/s coaxial cable transmission system, and a modulo-n divider technique for timing generation using ECL feedback shift registers for frequencies up to 1.6 GHz. The demonstrations highlight the multiplexer's ability to effectively extend the system speed limit of commercially available ECL from a few hundred Mbits/s to the Gbit/s range. An eight-input multiplexer using three chips in a hybrid assembly is demonstrated multiplexing a static input pattern up to 2.8 Gbits/s.     

Wavelength-tunable 16 optical channel transmission experiment at 2Gbit/s and 600 Mbit/s for broadband subscriber distribution

Reports a 16 optical-channel single-mode fibre transmission experiment based on dense-WDM and tunable-etalon channel selection. Experiments at 2 Gbit/s and 600 Mbit/s over 10 km of single-mode fibre show little crosstalk penalty when the optical channel spacing is 2 nm. The system architecture is useful for high-capacity broadband subscriber distribution     

16 Gbit/s all-optical demultiplexing using four-wave mixing

A novel, purely optical technique for demultiplexing high-speed time-division multiplexed data is proposed and demonstrated. The technique uses optical fibre nonlinearity induced four-wave mixing with a data signal and a probe signal located at different wavelengths. Using only semiconductor laser light sources, 1:4 demultiplexing of 20 ps long, subpicojoule, 2/sup 15/-1 RZ pulses at a data rate of 16 Gbit/s with less than 1 dB penalty is demonstrated.<>     

11.4 Gbit/s silicon bipolar multiplexer IC employing 2 mu m lithography transistors

A very high-speed 2:1 multiplexer IC operating up to 11.4 Gbit/s has been implemented. The circuit was fabricated using a 12 GHz non-polysilicon-emitter self-aligning bipolar process with 2 mu m lithography. Despite realisation in a relatively simple technology, this is the highest operating speed yet achieved with any technology.<>     

50 Gbit/s 2:1 multiplexer in 0.13 /spl mu/m CMOS technology

A fully integrated 2:1 multiplexer IC which operates at up to 50 Gbit/s data rate is presented. The MUX uses inductive shunt peaking and an output series inductor for higher bandwidth. The MUX directly drives the 50 /spl Omega/ load. The IC is fabricated in a 0.13 /spl mu/m bulk CMOS technology and draws 65 mA at 1.5 V supply voltage. The output voltage swing is 2/spl times/100 mV.     

1.4 Gbit/s optical DPSK heterodyne transmission system experiment

The authors report the performance of a 1.4 Gbit/s differential phase shift keying (DPSK) coherent fibre system experiment using a balanced receiver. They show that the detection sensitivity as a function of local oscillator power follows the same functional dependence as the theoretical prediction     

5 Gbit/s optical phase diversity homodyne detection experiment

A 5 Gbit/s phase diversity homodyne detection experiment has been performed by using a high-speed 1.5 mu m distributed-feedback laser diode with frequency-shift-keying modulation, a 3*3 optical fibre coupler for a 120 degrees optical hybrid, three matched wideband receivers and wideband squaring circuits for signal demodulation.<>     

Monolithic integrated 4:1 multiplexer and demultiplexer operating up to 4.8 Gbit/s

The letter describes the high-speed performance of a 4:1 time-division MSI multiplexer and demultiplexer, which are fabricated using advanced super self-aligned process technology (SST). The maximum operation speed of the multiplexer is 5.02 GHz under 576 mW power dissipation. The system, which is composed of a multiplexer and a demultiplexer, operates at up to 4.80 GHz. The demultiplexer has a power dissipation of 1148 mW. Interchannel interference is also examined.     

Optical time-division multiplexed transmission system experiment at 8 Gbit/s

We describe the design and performance of an experimental two-channel optical time-division multiplexed fibre transmission system operating at a wavelength of 1.3 ?m and a bit rate of 8 Gbit/s. Transmission over 8 km of single-mode fibre with low crosstalk and transmission error rates as low as 10?10 is demonstrated.     

Cabled-fibre, 1.6Gbit/s, 1550nm transmission experiment

We report on a 1.6Gbit/s transmission experiment through 82.5 km of production-type low-loss pure-silica-core cable (stranded and ribbon) with 43 rotary splices and 2 biconic connectors. A packaged 1.55?m distributed feedback (DFB) laser was the light source. A bit error rate of 2 × 10?10 was achieved using manufacturable transmitters and receivers with no observable error floor.     

Three-node, 40 Gbit/s OTDM network experiment using electro-opticswitches

The authors demonstrate, for the first time, a three node optically time division multiplexed network with a maximum capacity of 40 Gbit/s. Electro-optical switches were used for both `drop and insert' and demultiplexing, and electronic clock recovery provided synchronisation throughout the network     

60 Gbit/s time-division multiplexer in SiGe-bipolar technology withspecial regard to mounting and measuring technique

A 2:1 time-division multiplexer is presented which operates at up to 60 Gbit/s. This is the highest data rate ever achieved by an integrated circuit in any technology. The output voltage swing is 0.5 V _p-p (for 50Ω on-chip matching and 50Ω external load). The chips were fabricated using an advanced SiGe-bipolar technology (f_T=68 GHz) and then mounted on a comparatively simple measuring socket     

5 Gbit/s optical transmission system experiment employing laser amplifier repeater

The performance of a packaged semiconductor laser amplifier has been investigated for use in an optical transmission system at 5 Gbit/s. With optical filtering at the receiver input only small system penalties were found, as expected from the analysis of the dominant noise contributions.<>     

Generation and coding of a 100 Gbit/s signal by an InP-basedoptical multiplexer integrated with modulators

The authors demonstrate a novel InP-based optical multiplexer integrated with MQW electroabsorption modulators for 100 Gbit/s transmission. A 100 GHz optical pulse train is generated and coded with a pseudorandom NRZ pattern