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pH电极和传感器的进展 总被引:3,自引:0,他引:3
水溶液化学中用于非水溶液工作最有用的一个概念是溶液的pH。Sorensen首先作pH定量为水溶液中氢离子浓度的负对数;后来热力学活度概念的发展,又改浓度为活度。理论上只要有H~+离子或OH~-离子参与任何半反应都能用来测量pH,为了实验的实用性和方便,乃使用与氢离子活度非常接近的标准不同溶液中测量电极的电势差为根据,这种电极除氢电极以外有不少种类pH传感器。玻璃电极是后来应用最普通的传感器。 相似文献
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导波光学氢敏传感器研究进展 总被引:1,自引:0,他引:1
为了了解光学氢敏传感器研究与现状,我们介绍了导波光学氢敏传感器的主要应用场合和氢敏感膜的结构与镀膜工艺,对有代表性的光纤微透镜型、表面等离子共振光纤型、光纤倏逝波场型、光纤光栅和集成波导型氢敏传感器的结构及性能做了详细的分析,并对导波光学氢敏传感器的未来发展做了展望. 相似文献
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提出了一种新颖的基于波长调制的Au/Pd复合膜SPR氢敏传感器结构,采用遗传基因算法对Au/Pd复合膜氢敏传感器的灵敏度进行了数值计算和优化,优化结果表明:Au(2 nm)/Pd(27 nm)结构的复合膜氢敏传感器可获得最佳的灵敏度,与通常使用的单一纯Pd(20 nm)膜氢敏传感器相比,不仅氢敏传感器的敏感膜的稳定性得到改善,而且灵敏度也提高了近3倍. 相似文献
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用pH玻璃电极测定水溶液中氢离子活度,不受溶液颜色、粘稠性和溶解氧的影响,是目前在线检测发酵液值的最佳传感器.可消毒pH电极以瑞士Ingold公司最为著名.自1965年起我国也开始制备发酵pH电极.本文报道的则是自制的90型可消毒pH传感器的制备、性能和实际使用情况.1 电极的制备90型pH电极结构的关键部份是敏感膜.研制的电极敏感膜呈圆柱形,长度为15mm,它较球形敏感膜有明显的优点:机械强度高,可避免安装、试验过程中的人为不小心损坏;敏感区域长,可减少粘稠发酵液覆盖敏感膜引起的误差.pH敏感膜玻璃组分是决定电极性能的主要因素,所以对玻璃成分的设计要兼顾几个方面:玻璃成分与电极内阻的关系;玻璃成分与化学耐久性而高温蒸汽消毒性能的关系,玻璃组分与玻璃敏感膜成型工艺的关系,经 相似文献
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本文介绍为实现带有参比电极的ISFET测量探头微型化而研制成的一种新型探头。采用等离子聚合方法在ISFET敏感栅上覆盖一层聚苯烯薄膜(PPS),使其成为对H~+不敏感的参比场效应晶体管(REFET)。而后采用IC艺,将ISFET,REFET和伪参比电极集成化,得到可用于微量溶液测量的微型探头,将探头中的ISFET和REFET按差分对管方式连接于差放线路中,由于两管对溶液中pH值响应不同,可输出随pH值变化的差模信号。研制的REFET在pH4~pH11范围内几乎无响应,表明了PPS膜具有较少的表面态及良好的H~+掩蔽性。用集成化探头测量pH值,灵敏度可达55mV/pH。 相似文献
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Abstract
A finite element approximation of the thin film limit for a sharp interface bulk energy for martensitic crystals is given.
The energy density models the softening of the elastic modulus controlling the low-energy path from the cubic to the tetragonal
lattice, the loss of stability of the tetragonal phase at high temperatures and the loss of stability of the cubic phase at
low temperatures, and the effect of compositional fluctuation on the transformation temperature. The finite element approximation
is then used to simulate the hysteresis of a martensitic thin film obtained after applying a biaxial loading cycle to the
film below the transformation temperature.
Keywords: finite element, phase transformation, martensite, austenite, thin film
Mathematics Subject Classification (1991): 65C30, 65Z05, 74K35, 74N10, 74N15, 74S05 相似文献
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《Sensors and actuators. B, Chemical》2006,113(1):555-562
An approach to enhance accuracy of the output signal obtained from ISFET interface electronics due to the body effect is proposed. Based on an MOS drawing the same drain current as the ISFET, the scheme allows reduction of influence of body effect. The presented readout interface improves the accuracy of pH measurements, while maintaining operation at constant drain-source voltage and current condition. Using only one ISFET with a differential output configuration, we obtained temperature-dependency and long-term drift as well as common noise compensation. The proposed technique is simple and has a universal use for different ISFETs. In addition, a voltage-controlled dc offset error compensation circuit modulates the extracted signal to the desired dc level for the A/D converter for each sensor. Simulation and experimental results show a great effect on monolithic ISFET integration in CMOS technology. 相似文献
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《Sensors and actuators. B, Chemical》2004,97(1):122-131
CIMP (complementary ISFET/MOSFET pair)—a novel technique for implementation of readout interface in CMOS ISFET-based microsystems is described. This design technique allows body effect elimination, temperature compensation and design simplicity, while maintaining constant biasing of ISFET sensor. Several configurations of CIMP interface provide applicability for array-type sensors. The general concept presentation is followed by a detailed analysis, test results showing 0.1% accuracy and layout implementations in a standard 1.6 μm CMOS technology. 相似文献
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ZOU XuDong & ZHANG JinWen National Key Laboratory of Science Technology on Micro/Nano Fabrication 《中国科学:信息科学(英文版)》2011,(8)
In this paper, performance of PECVD SiO 2 /Si 3 N 4 double layers electrets with different thicknesses were investigated detailedly in respect of chargeability, storage charge stability in high temperature and reliability in high humidity environment. Samples with different thicknesses of Si 3 N 4 and SiO 2 were prepared on Pyrex 7740 glass substrates and characterized by isothermal and high humidity charge decay. The results of experiment approved that the PECVD SiO 2 /Si 3 N 4 double layers electrets on g... 相似文献
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针对标准体硅在CMOS和PD SOI CMOS两种工艺下的nMOSFETs,研究了沟道长度和宽度缩减对热载流子效应的影响。实验结果表明,在两种工艺下,热载流子的退化均随着沟道长度的减小而增强;然而,宽度的减小对两种工艺热载流子退化的影响却截然不同:体硅工艺的热载流子退化随宽度的减小而增强,SOI工艺的热载流子退化随宽度的减小而减小。基于界面态对热载流子效应的影响深入分析了长度减小导致两种工艺下热载流子退化均加重的原因;同时基于边缘电场分布对热载流子效应的影响解释了宽度减小导致两种工艺下热载流子退化规律截然相反的现象。研究结果对于实际深亚微米工艺下,集成电路设计中器件工艺尺寸和版图结构的选择具有一定指导意义。 相似文献
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介绍了基于ZnO压电薄膜的微型弯曲板波(FPW)器件的设计与制作。为减小薄膜的应力,器件采用LTO/ZnO/LTO/Si3N4多层复合板结构,并采用直流磁控溅射工艺制备ZnO压电薄膜,在压电复合板结构上沉积两对叉指电极,分别用于Lamb波的激发和接收。X射线衍射分析表明,沉积的ZnO薄膜C轴高度择优;扫描电子显微镜分析表明,制备的ZnO薄膜平整、致密,晶粒生长呈现明显的柱状结构;通过分析制备的高次谐波体声波谐振器(HBAR)器件性能来间接检验ZnO压电薄膜的电学性能,HBAR器件的品质因子较高,表明薄膜有较好的压电性能。利用安捷伦E5071C网络分析仪检测FPW器件的频率响应,结果表明反对称A0模式Lamb波的实测中心频率与理论计算的频率结果基本一致。 相似文献
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Gaur Surender P. Kumar Prem Rangra Kamaljit Kumar Dinesh 《Microsystem Technologies》2018,24(3):1603-1608
Microsystem Technologies - Pyroelectric infrared sensors utilize interfacial polymer bonding, thick porous silica layer and Si3N4 thin film as conventional methods of reducing heat sinking with... 相似文献