控制降温对近空间升华法沉积CdZnTe薄膜形貌与结构的影响

采用场发射扫描电镜和X射线衍射技术研究了生长结束后的降温过程对以近空间升华法生长的CdZnTe薄膜形貌与结构的影响。分析了快速(炉冷,673K以上-8K/min)和慢速(-2K/min)两种降温速率下获得的CdZnTe薄膜的结构与形貌,并考察了降温中是否阻断生长源向薄膜的传质的影响。结果表明,所得到的薄膜均为闪锌矿结构,降温时薄膜的持续生长将抑制晶粒在平面内铺展而使其棱角钝化的趋势,以较慢的速率降温和降温时阻断传质均有利于提高薄膜的致密度,降低粗糙度及薄膜的织构强度。     

CSS法制备CdZnTe薄膜时衬底温度的影响规律

采用近空间升华法(close-spaced sublimation,CSS),以CdZnTe化合物粉料为原料制备了CdZnTe薄膜,采用XRD、SEM、紫外光谱仪等对其进行了性能表征,并研究了不同生长温度对薄膜生长速率、结构、Zn含量和光学特性的影响规律.研究结果表明,薄膜的生长速率随着生长温度的升高而增大,且温度>5...     

溅射功率对CdZnTe薄膜成分和结构的影响

采用Cd0.9Zn0.1Te晶体作为溅射靶在玻璃衬底上利用磁控溅射法制备出CdZnTe薄膜,研究了溅射功率对CdZnTe薄膜的成分、结构特性的影响。制备的CdZnTe薄膜是具有闪锌矿结构的多晶薄膜,沿（111）择优取向。随着溅射功率的增大,薄膜沉积速率增大,薄膜结晶质量提高。采用晶体靶Cd0.9Zn0.1Te溅射CdZnTe薄膜时,无论是在何种功率下CdZnTe薄膜中的Cd原子成分均高于Te原子成分,Cd原子表现为择优溅射原子。     

纳米TiO2薄膜的制备及其表面形貌AFM观测

采用溶胶-凝胶法在玻璃载波片及ITO导电玻璃片上制备出负载型纳米TiO2薄膜,并用原子力显微镜(AFM)对不同条件下制备的TiO2的表面形貌进行了表征.结果表明,TiO2薄膜能较好地负载在玻片表面,并且TiO2薄膜的表面形貌与前驱物的配比浓度、基片、热处理温度等都有密切的关系.随浓度和镀膜层数的增大,薄膜中TiO2纳米微晶的颗粒尺寸逐渐增大,从细小均匀粒子膜变为较大不规则的板块结构.在ITO薄膜面形成的TiO2薄膜具有较小的颗粒和均匀的分布.     

化学气相沉积制备纳米结构碳化钨薄膜

采用氟化钨(WF6)和甲烷(CH4)为前驱体,采用等离子体增强化学气相沉积(PECVD)方法制备具有纳米结构的碳化钨薄膜。采用SEM、XRD、EDS等方法表征了碳化钨薄膜的形貌、晶体结构和化学组成。通过表征,表明在前驱体混合气体中的甲烷与氟化钨气体的流量比(碳钨比)为20、基底温度为800℃的条件下得到的碳化钨薄膜是由直径为20～35nm的圆球状纳米晶构成。通过分析影响薄膜的晶体结构、化学组成的因素后,认为要得到具有纳米晶结构的碳化钨薄膜,主要应控制前驱体气体中的碳钨比以及基底温度。     

掠射角溅射沉积纳米结构氧化钨薄膜

采用掠射角反应磁控溅射法在室温下沉积了纳米结构氧化钨(WO₃)薄膜, 并对薄膜进行热处理。利用场发射扫描电镜(FE-SEM)和X射线衍射仪(XRD)对氧化钨薄膜的形貌和结构进行了表征。当掠射角度为80°时, 采用直流电源沉积的氧化钨薄膜具有纳米斜柱状结构, 而采用脉冲直流电源沉积的薄膜呈现纳米孔结构。纳米薄膜经450℃热处理3 h后, 纳米斜柱彼此连接, 失去规整结构, 而纳米孔结构的孔尺寸变大。XRD分析表明室温沉积的氧化钨薄膜具有无定形结构, 经450℃热处理1 h后, 转变为单斜晶相。具有纳米斜柱状或纳米孔结构氧化钨薄膜的光学调制幅度在波长600 nm时达到60%, 且电致变色性能可逆。     

沉积温度对ZrO2薄膜结构及表面形貌的影响

采用反应磁控溅射方法,在室温～550℃的沉积温度下,在Si(100)和玻璃基片上沉积了厚度在纳米量级的ZrO2薄膜.通过高分辨电子显微镜、原子力显微镜和透射光谱分析,研究了沉积温度对ZrO2薄膜的相结构、表面形貌和折射率的影响.研究结果表明沉积温度低于250℃时,ZrO2薄膜的结构完全呈非晶态,但250℃沉积的薄膜有比较高的致密度;随着沉积温度的升高,薄膜出现了明显的结晶现象,主要为单斜ZrO2相;沉积温度为450℃时,ZrO2薄膜晶化不完全,在晶粒堆砌处有非晶ZrO2相存在;沉积温度为550℃时,ZrO2薄膜完全晶化,在晶粒堆砌处有四方ZrO2相存在.此外,根据薄膜相结构和表面形貌的研究结果,探讨了沉积温度对薄膜生长行为的影响及其物理机制.     

离子束溅射生长Ge纳米薄膜的表面形貌观察

采用离子束溅射技术并按正交试验方案生长了不同厚度以及在不同条件下退火的Ge纳米薄膜,用AFM图谱对薄膜的表面形貌进行了表征.结果表明厚度为2.8nm的Ge膜在600℃下退火10min,出现了高4nm、直径50nm左右的Ge岛,而10nm厚的Ge膜在720℃下退火120min,岛的数量较多且分布比较均匀.通过离子束溅射机理和沉积原子之间的扩散运动,对这些现象进行了较为合理的解释.     

真空蒸发沉积聚苯胺晶态薄膜的研究

利用傅里叶变换红外光谱、透射电子显微镜、高分辨扫描电子显微镜和扫描隧道显微镜等多种分析技术，对用真空蒸发沉积技术制备的不同聚苯胺薄膜试样进行了综合表征。研究发现，ＰＡＮＩ薄膜是无定形态的绝缘膜；经ＨＣｌ掺杂的ＰＡＮＩ薄膜尽管其电导率有很大提高，但仍是非晶态的薄膜；而ＰＡＮＩ－ＴＣＮＱ薄膜确是多晶薄膜，且薄膜的电导率较ＰＡＮＩ薄膜提高几个数量级。研究发现ＰＡＮＩ－ＴＣＮＱ薄膜中的ＰＡＮＩ聚合链与ＴＣ     

AFM研究表面活性剂对Fe2O3纳米薄膜形貌的影响

用ＦｅＣｌ３为起始原料水解法制备了Ｆｅ２Ｏ３纳米薄膜。实验中加入了不同的表面活性剂改善胶体与基片的附着力。使用原子力显微镜（ＡＦＭ）对簿膜的形貌进行了表征,讨率了表面活性剂影响簿膜中氧化铁纳米颗粒形貌的因素。     

The growth and the interfacial layer of CdZnTe nano-crystalline films by vacuum evaporation

Nano-crystalline CdZnTe films were fabricated by thermal vacuum evaporation. The structure and surface morphology of the CdZnTe films were determined by XRD and SEM. The CdZnTe films were poly-crystalline with preferential (111) orientation. The CdZnTe films exhibited a typical particle size of 15 nm and a blue shift in the absorption with an effective band gap of 2.26 eV. An amorphous Te interfacial layer with thickness of 3 nm was observed with high resolution transmission electron microscopy, which should be formed at the initial stage of the growth. This is because the equilibrium vapor pressure of Cd is largely higher than that of Te₂ at the growth temperature, and the desorption rate of Cd atoms is much higher than that of and Te₂ molecules. The amorphous interfacial layer should be favorable for the formation of nano-crystalline CdZnTe film.     

The growth and the interfacial layer of CdZnTe nano-crystalline films by vacuum evaporation

Nano-crystalline CdZnTe films were fabricated by thermal vacuum evaporation. The structure and surface morphology of the CdZnTe films were determined by XRD and SEM. The CdZnTe films were poly-crystalline with preferential (111) orientation. The CdZnTe films exhibited a typical particle size of 15 nm and a blue shift in the absorption with an effective band gap of 2.26 eV. An amorphous Te interfacial layer with thickness of 3 nm was observed with high resolution transmission electron microscopy, which should be formed at the initial stage of the growth. This is because the equilibrium vapor pressure of Cd is largely higher than that of Te₂ at the growth temperature, and the desorption rate of Cd atoms is much higher than that of and Te₂ molecules. The amorphous interfacial layer should be favorable for the formation of nano-crystalline CdZnTe film.     

CdZnTe单晶的机械抛光及其表面损伤层的测定

研究了CdZnTe单晶片的机械抛光工艺.采用SiO2和MgO进行分步机械抛光后的晶片光亮平整,在光学显微镜下观察没有划伤,采用New View5000TM测得抛光后晶片的表面粗糙度Ra为8.752nm.采用X射线摇摆曲线的半峰宽表征了表面损伤程度.通过分析不同时间腐蚀后晶片的质量和半峰宽值,计算出机械抛光产生的表面损伤层厚度约为26.7μm.     

近空间升华法制备CdZnTe厚膜及其性能研究

采用近空间升华法在FTO玻璃衬底上制备CdZnTe多晶厚膜,并采用扫描电镜(SEM)、能谱仪(EDS)、X射线衍射仪(XRD)、紫外-可见光谱仪、I-V测试仪等对CdZnTe厚膜的表面形貌、成分、结构以及光电性能进行分析表征。结果表明,所制备的CdZnTe膜均匀致密,随生长时间的延长,晶粒尺寸明显增大;不同厚度的CdZnTe膜均表现出沿(111)晶面的择优生长;CdZnTe厚膜的禁带宽度在1.53～1.56eV之间;电阻率在1010Ω.cm数量级,具有较好的光电响应,试制的薄膜探测器可用作计数型探测器。     

Control of morphology and optical properties of PbS nanostructured thin films by deposition parameters: study of mechanism

PbS thin films were grown on glass substrates by chemical bath deposition (CBD) using lead nitrate, thiourea and sodium hydroxide in aqueous solutions at three different temperatures (22, 36 and 50?°C). The microstructure and morphology evolution of the films were investigated using X-ray diffraction, scanning electron microscopy and atomic force microscopy. Optical properties were studied using UV–Vis–IR spectroscopy. The results indicate that temperature plays an important role in controlling the morphology and optical properties of nanostructured PbS thin films through changing deposition mechanism. The active deposition mechanism changed from cluster to ion-by-ion mechanism with an increase in deposition temperature from 22 to 50?°C, and consequently, film properties such as morphology, optical absorption and preferred orientation changed completely.     

Surface morphology and properties of GaAs epilayers controlled by temperature difference method of liquid phase epitaxy

Epilayers of gallium arsenide were grown by using the steady-state temperature difference method of liquid phase epitaxy. The surface of grown layers was smooth and shiny. Carrier concentrations of films varying from 10¹⁶ to 10¹⁷ cm⁻³ could be obtained with good reproducibility. The surface morphology growth rate, carrier concentration and Hall mobility of the epilayers were studied. Several distinct types of surface features were also investigated and explained. A segregation coefficient for the net carrier concentration versus tin concentration in the growth melt was calculated as 1·84 × 10⁻⁴ at 700°C for (100) GaAs substrate. Thickness control for epilayers down to submicron can be obtained reproducibly.     

Local surface morphology and chemistry of SnO2 thin films deposited by rheotaxial growth and thermal oxidation method for gas sensor application

In this paper experimental results of a comparative X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS) study of the crystalline structure, the local morphology, and the surface and in-depth chemistry of SnO₂ thin films obtained by Rheotaxial Growth and Thermal Oxidation (RGTO) method are presented. XRD rules out even a minor presence of a coexisting SnO phase. AFM and SEM show a fractal like morphology of nanograins (20 nm typical size) agglomerated in clusters of crystallites with a bimodal size distribution. XPS shows that the surface of the SnO₂ crystallites is slightly under-stoichiometric as expected from the oxygen deficient termination of their facets. Noteworthy, as evidenced by XPS depth profiles, there are no significant changes of the surface chemistry of the RGTO film with argon ion sputtering.     

Structure of vacuum deposited SnSe films

Tin selenide (SnSe) thin films prepared on mica and glass substrates by vacuum sublimation technique and examined by scanning electron microscopy and transmission electron diffraction techniques showed epitaxial and polycrystalline nature respectively irrespective of substrate temperature. Grain size of the films deposited on glass substrate increased with increase in substrate temperature.