共查询到20条相似文献,搜索用时 31 毫秒
1.
Changyi Yang David Jamieson 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2010,268(11-12):2034-2037
Avalanche silicon photodiodes have potential applications to detect low energy single ions for counting single ion impacts in shallow implant depths for the deterministic doping of nanoscale electronic devices. This paper reports the investigation of avalanche photodiode detectors in the linear operation mode for detection of 0.5–2 MeV helium ions. The measured charge gain was found to be up to 100 depending on bias voltage. The charge gain was found to saturate at a level that correlated with the ion stopping depth in silicon. The measured charge gain for energetic ions, which have a well-defined depth in a silicon substrate for the deposition of ionization energy, is compared with that of X-rays and photons, which deposit the ionization energy over a wider range of depth. This allowed the identification of a suitable structure for an avalanche photodiode optimised for the detection of sub-10 keV heavy ions with an internal charge gain above 10 achievable. This offers significant advantages over conventional PIN devices where the signals from such ions would be lost in the noise. 相似文献
2.
M. Msimanga C.M. Comrie C.A. Pineda-Vargas S. Murray 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2010,268(11-12):1772-1775
The study of the stopping and range of heavy ions (Z > 3) in matter isdsc cfddc of both fundamental and practical interest as heavy ions find increasing usage in a wide range of ion beam based techniques. While semi-empirical formulations like the widely used SRIM code can predict the stopping powers of hydrogen and helium in many elemental and compound targets over a wide range of energies quite well, their predictive accuracy for heavy ions is not as good. This is mainly due to the lack of heavy ion experimental stopping power data on which such codes are based. We present results of measurements performed using a Time of Flight–Energy spectrometer to determine the stopping powers of O, F, Mg and Al ions in the oxide ceramic ZrO2 within the 0.1–0.6 MeV/u energy range. Possible SRIM correction (or correlation) factors for F, Mg and Al ions were extracted from quantitative comparisons of experimental and predicted stopping power values. 相似文献
3.
G. Kalinka M. Novák A. Simon Ž. Pastuović M. Jakšić Á.Z. Kiss 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2009,267(12-13):2203-2207
The spectral deterioration of Hamamatsu S5821 silicon photodiodes for ion types and energies frequently used in Ion Beam Analysis was investigated. Focused proton beams with energies 430 keV and 2 MeV were applied to generate radiation damage via an area selective ion implantation in unbiased diodes at room temperature. The variations of spectroscopic features were measured “in situ” by Ion Beam Induced Current (IBIC) method as a function of fluence, within the 109–5 × 1012 ion/cm2 range and diode bias voltages, between 0 and 100 V.An empirical model has been developed to describe the radiation damage. Equations are derived for the variations of the normalized peak position and peak width. The derived empirical equations are physically correct, as far as they account for the superposition of the influence of charge carrier trapping by native and radiation-induced defects and for the effect of charge carrier velocity saturation with electric field strength, as well. 相似文献
4.
T. Seki T. Aoki J. Matsuo 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2009,267(8-9):1444-1446
Cluster ion beam processes can produce high rate sputtering with low damage compared with monomer ion beam processes. Cl2 cluster ion beams with different size distributions were generated with controlling the ionization conditions. Size distributions were measured using the time-of-flight (TOF) method. Si substrates and SiO2 films were irradiated with the Cl2 cluster ions at acceleration energies of 10–30 keV and the etching ratio of Si/SiO2 was investigated. The sputtering yield increased with acceleration energy and was a few thousand times higher than that of Ar monomer ions. The sputtering yield of Cl2 cluster ions was about 4400 atoms/ion at 30 keV acceleration energy. The etching ratio of Si/SiO2 was above eight at acceleration energies in the range 10–30 keV. Thus, SiO2 can be used as a mask for irradiation with Cl2 cluster ion beam, which is an advantage for semiconductor processing. In order to keep high sputtering yield and high etching ratio, the cluster size needs to be sufficiently large and size control is important. 相似文献
5.
Takeshi Ohshima Naoya Iwamoto Shinobu Onoda Tomihiro Kamiya Katsuyasu Kawano 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2009,267(12-13):2189-2192
N+p and p+n diodes were fabricated on p- and n-type 6H–SiC substrates with epitaxial layers, respectively. The charge induced in the diodes by 9 MeV oxygen (O) and nickel (Ni) ions was measured using Transient Ion Beam Induced Current (TIBIC) to clarify the capability of these diodes as particle detectors. As a result of the TIBIC measurements using 9 MeV O, the Charge Collection Efficiency (CCE) of around 83% was obtained for both p+n and n+p diodes. Since the CCE value includes the consumption of incident ion energy in an Al electrode and the n+ (p+) region as well as the decay of charge in the measurement system, the CCE value obtained in this study indicates that SiC n+p as well as p+n diodes are suitable for particle detectors. On the other hand, in the case of 9 MeV Ni ion irradiation, the CCE for both n+p and p+n diodes decreases due to the Auger recombination in dense electron–hole pairs. 相似文献
6.
《Fusion Engineering and Design》2014,89(7-8):1101-1106
China Low Activation Martensitic (CLAM) steel has been chosen as the primary candidate structural material for the first wall/blanket for fusion reactor. The excessive helium irradiation induced damage of CLAM steel at high temperatures and the evolution of defects were investigated in this paper. The samples were homogeneously implanted with 1e + 17 ions/cm2 and 100 keV of helium at room temperature, 473, 673, and 873 K. Irradiation induced damage of CLAM steel and the annealing behavior of defects were probed by slow positron beam Doppler broadening technique. Helium implantation produced a large number of vacancy-type defects which bound with helium and formed helium–vacancy complexes. Target atoms’ displacement capacity was strengthened with rising irradiation temperatures, so the S parameter increased with increasing irradiation temperatures, and helium–vacancy complexes were main defects after helium implantation at damage layers. Helium bubbles would be unstable and the desorption of helium bubbles would promote the density of defects above 673 K. By analyzing the curves of S–W and annealing tests of irradiated specimen, it suggested that there werenot only one type of defect in damage layers. Though helium–vacancy complexes were primary defects after helium implanted, introducing excessive helium might also generated other point defects or dislocation loops in the material. 相似文献
7.
N. Srinivasa Rao A.P. Pathak N. Sathish G. Devaraju S.A. Khan K. Saravanan B.K. Panigrahi K.G.M. Nair D.K. Avasthi 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2010,268(11-12):1741-1743
Ge nanocrystals embedded in SiO2 matrix have been synthesized by swift heavy ion irradiation of Ge implanted SiO2 films. In the present study, 400 keV Ge+ ions were implanted into SiO2 films at dose of 3 × 1016 ions/cm2 at room temperature. The as-implanted samples were irradiated with 150 MeV Ag12+ ions with various fluences. Similarly 400 keV Ge+ ions implanted into Silicon substrate at higher fluence at 573 K have been irradiated with 100 MeV Au8+ ions at room temperature (RT). These samples were subsequently characterized by XRD and Raman to understand the re-crystallization behavior. The XRD results confirm the presence of Ge crystallites in the irradiated samples. Rutherford backscattering spectrometry (RBS) was used to quantify the concentration of Ge in the SiO2 matrix. Variation in the nanocrystal size as a function of ion fluence is presented. The basic mechanism of ion beam induced re-crystallization has been discussed. 相似文献
8.
K. Yasuda C. Batchuluun R. Ishigami S. Hibi 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2010,268(11-12):2023-2027
A time-of-flight ERDA (TOF-ERDA) measurement system has been developed for the analysis of light elements. He ions are used for the incident beam, and recoil light ions are detected with the system. The system consists of a time detector and a silicon detector, and energy and velocity of recoil ion are measured simultaneously. The depth resolution of 21.6 ± 2.2 nm (FWHM) has been obtained by an ERDA measurement of a thin carbon layer onto a silicon wafer using a 5.7 MeV He beam. The mass resolution is better than 1 for elements up to oxygen. Maximum detectable depth of carbon in a PET film is about 650 nm. An ERDA measurement of implanted carbon in a silicon wafer has been demonstrated. 相似文献
9.
G. Vizkelethy S. Onoda T. Hirao T. Ohshima T. Kamiya 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2009,267(12-13):2185-2188
As overlayers on electronic devices become progressively thicker, radiation effects microscopy using traditional microbeams (with ion energies up to a few tens of MeVs) is becoming less and less viable. To penetrate to the sensitive regions of these devices, much higher energies, several hundreds of MeVs are necessary. These high energies are available only from cyclotrons. A nuclear microprobe has been developed on the AVF cyclotron of the Takasaki Ion Accelerators for Advanced Radiation Applications (TIARA) facility. In this paper we will present the first results using 260 MeV Ne and 520 MeV Ar microbeams to perform Time Resolved Ion Beam Induced Current (TRIBIC) measurements on Metal-Oxide-Semiconductor (MOS) capacitors. The results will be compared to data taken with a traditional 15 MeV O microbeam. 相似文献
10.
V.Kh. Alimov B. Tyburska-Püschel Y. Hatano J. Roth K. Isobe M. Matsuyama T. Yamanishi 《Journal of Nuclear Materials》2012,420(1-3):370-373
Samples prepared from polycrystalline ITER-grade tungsten were damaged by irradiation with 20 MeV W ions at room temperature to a fluence of 1.4 × 1018 W/m2. Due to the irradiation, displacement damage peaked near the end-of-range, 1.35 μm beneath the surface, at 0.89 displacements per atom. The damaged as well as undamaged W samples were then exposed to low-energy, high-flux (1022 D/m2 s) pure D and helium-seeded D plasmas to an ion fluence of 3 × 1026 D/m2 at various temperatures. Trapping of deuterium was examined by the D(3He,p)4He nuclear reaction at 3He energies varied from 0.69 to 4.0 MeV allowing determination of the D concentration at depths up to 6 μm. It has been found that (i) addition of 10% helium ions into the D plasma at exposure temperatures of 440–650 K significantly reduces the D concentration at depths of 0.5–6 μm compared to that for the pure plasma exposure; (ii) generation of the W-ion-induced displacement damage significantly increases the D concentration at depths up to 2 μm (i.e., in the damage zone) under subsequent exposures to both pure D and D–He plasmas. 相似文献
11.
《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》1999,147(1-4):181-186
Different ion-implanted p-type Hg0.78Cd0.22Te samples were analyzed by infrared reflectivity in the 2–20 μm wavelength range. We show how to derive some characteristic values of the free carriers induced by ion implantation from simple models of the implanted samples. For low energy implantations (Al (320 keV)) an excess of electrons with concentration n+ ≈ 5 × 1017 cm−3 for doses 1012 and 1014 ions cm−2 is observed between the surface and the projected range Rp of the ions, in agreement with the well-known change of type of the free carriers induced by the ion implantation in this kind of samples. High energy α particle (0.8 and 2 MeV, 1014 ions cm−2) implantations lead to a pronounced inhomogeneous concentration of free electrons with n+ ≈ 9.2 × 1016 cm−3 between the surface and Rp where a negligible amount of defects due to the nuclear energy loss is formed, and n+ ≈ 1.6 × 1017 cm−3 between Rp and Rp + ΔRp, ΔRp being the longitudinal straggling, where the defect production rate through the nuclear energy loss mechanism is maximum. 相似文献
12.
L. Torrisi L. Giuffrida M. Rosinski C. Schallhorn 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2010,268(17-18):2808-2814
Laser ion sources (LIS) are employed with success to generate, in vacuum, Ge and Ti ion beams with high current, ion energy, charge states and directivity.Nanoseconds infrared laser pulses, with intensities of the order of 1010 W/cm2, induce high ablation in Ge and Ti targets. Ions are produced in vacuum with energy distribution following the Coulomb–Boltzmann-shifted distribution and they are ejected mainly along the normal to the target surface. The free ion expansion process occurs in a constant-potential chamber placed at 30 kV positive voltage. An electric field of 5 kV/cm was used to accelerate the ions emitted from the plasma at INFN-LNS laser facility. Time-of-flight technique is employed to measure the mean ion energies of the post-accelerated particles. Ion charge states and energy distributions were measured through an ion energy spectrometer. 相似文献
13.
J.Y. Hsu Y.C. Yu K.M. Chen 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2010,268(11-12):1786-1789
Stopping force and straggling of 0.6–3.5 MeV 1H ions, 2.0–4.7 MeV 4He ions and 1.4–4.4 MeV 7Li ions in the polyhydroxybutyrate (PHB) foil were measured by means of a transmission technique. The measured stopping forces are in well agreement with the SRIM 2008 calculation and the ICRU Report tables, except for the lower energy region. The obtained energy loss straggling deviates from the Bohr’s value by as much as 23.6% for the energies under study. The validity of the Bragg’s rule has also been demonstrated in the stopping force and straggling for 1H, 4He and 7Li ions in the PHB foil. 相似文献
14.
《Journal of Nuclear Materials》2006,348(1-2):33-39
The deuterium and helium retention properties of V–4Cr–4Ti alloy were investigated by thermal desorption spectroscopy (TDS). Ion energies of deuterium and helium were taken at 1.7 and 5 keV, respectively. The retained amount of deuterium in the sample irradiated at 380 K increased with the ion fluence and was not saturated to fluence of up to 1 × 1023 D/m2. For the irradiation at 773 K, 0.1% of implanted deuterium was retained at the highest fluence. For the helium ion irradiation at room temperature, three groups of desorption peaks appeared at around 500, 850, and 1200 K in the TDS spectrum. In the lower fluence region (<1 × 1021 He/m2), the retained helium desorbed mainly at around 1200 K. With increasing fluence, the amount desorbed at 500 K increased. Total amount of retained helium in the samples saturated at fluence up to 5 × 1021 He/m2 and saturation level was 2.7 × 1021 He/m2. 相似文献
15.
Satoshi Abo Naoyuki MasudaFujio Wakaya Shinobu OnodaTakahiro Makino Toshio HiraoTakeshi Ohshima Toshiaki IwamatsuHidekazu Oda Mikio Takai 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2011,269(20):2360-2363
Soft errors induced by proton, helium and oxygen ion irradiations were measured as a function of distance between a body electrode under partial trench isolation and a metal pad connected to a tungsten via for the first metal layer of a silicon-on-insulator (SOI) static random access memory. Abnormal drain charges induced by ion irradiations with various distances in the SOI metal oxide semiconductor field effect transistor were simulated to be compared with the experimental results. The soft errors were found to depend on the distance between the body electrode and the metal pad in the case of the abnormal drain charge, which is induced by incident ions, lower than the critical charge of the SRAM cells. The soft errors did not depend on the distance for the abnormal drain charges higher than the critical charge. 相似文献
16.
N.-T.H. Kim-Ngan A.G. Balogh L. Havela T. Gouder 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2010,268(11-12):1875-1879
Thickness, composition, concentration depth profile and ion irradiation effects on uranium nitride thin films deposited on fused silica have been investigated by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He+ ions. The films were prepared by reactive DC sputtering at the temperatures of ?200 °C, +25 °C and +300 °C. A perfect 1U:1N stoichiometry with a layer thickness of 660 nm was found for the film deposited at ?200 °C. An increase of the deposition temperature led to an enhancement of surface oxidation and an increase of the thickness of the mixed U–N–Si–O layers at the interface. The sample irradiation by 1 MeV Ar+ ion beam with ion fluence of about 1.2–1.7 × 1016 ions/cm2 caused a large change in the layer composition and a large increase of the total film thickness for the films deposited at ?200 °C and at +25 °C, but almost no change in the film thickness was detected for the film deposited at +300 °C. An enhanced mixing effect for this film was obtained after further irradiation with ion fluence of 2.3 × 1016 ions/cm2. 相似文献
17.
M. Usman M. Nour A.Yu. Azarov A. Hallén 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2010,268(11-12):2083-2085
Ion implantation induced damage formation and subsequent annealing in 4H–SiC in the temperature range of 100–800 °C has been investigated. Silicon Carbide was implanted at room temperature with 200 keV 40Ar ions with two implantation fluences of 4 × 1014 and 2 × 1015 ions/cm2. The samples were characterized by Rutherford backscattering and nuclear reaction analysis techniques in channeling mode using 2.00 and 4.30 MeV 4He ion beams for damage buildup and recovery in the Si and C sublattices, respectively. At low ion fluence, the restoration of the Si sublattice is evident already at 200 °C and a considerable annealing step occurs between 300 and 400 °C. Similar results have been obtained for the C sublattice using the nuclear resonance reaction for carbon, 12C(α,α)12C at 4.26 MeV. For samples implanted with the higher ion fluence, no significant recovery is observed at these temperatures. 相似文献
18.
T. Kamiya K. Takano Y. Ishii T. Satoh M. Oikawa T. Ohkubo J. Haga H. Nishikawa Y. Furuta N. Uchiya S. Seki M. Sugimoto 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2009,267(12-13):2317-2320
In TIARA facility of Japan Atomic Energy Agency (JAEA) Takasaki, we have produced three-dimensional micro/nano-structures with high aspect ratio using cross linking process based on negative resist such as SU-8 by a technique of mask less ion beam lithography. By bombarding high energy heavy ions such as 450 MeV Xe23+ to SU-8, on the other hand, it appeared that a nanowire could be produced just with a single ion hitting. Then we tried to produce nanowires, of which both ends were fixed in the three-dimensional structure. This paper shows a preliminary experiment for this purpose using a combination of 15 MeV Ni4+ ion microbeam patterning and the 450 MeV 129Xe23+ hitting on SU-8. 相似文献
19.
D. Abriola P. Carnelli A. Arazi J.M. Figueira O.A. Capurro M.A. Cardona J.O. Fernández Niello D. Hojman L. Fimiani P. Grinberg D. Martinez Heimann G.V. Martí A.E. Negri A.J. Pacheco 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2010,268(11-12):1793-1796
Elastic cross sections for the 7Li + 27Al system were measured at laboratory energies between 7 and 11 MeV in steps of 0.25 MeV, and angles between 135° and 170° in steps of 5°. Excitation functions for the elastic scattering were measured using an array of eight Si surface-barrier detectors whereas a solid-state telescope was used to estimate and subtract background from other reactions. Contamination from α particles arising from the 7Li breakup process at Elab ? 10 MeV makes the use of these energies inadvisable for RBS applications. The present results are compared with previous data obtained at 165° (Elab ? 6 MeV), 140° and 170° (Elab ? 8 MeV). The experimental data were analyzed in terms of the Optical Model. Two different energy-independent potentials were found. These optical potentials allow an interpolation with physical meaning to other energies and scattering angles. The experimental cross sections will be uploaded to the IBANDL database. 相似文献
20.
《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2004,226(3):385-391
The features of the oxygen sublattice in a crystal YBa2Cu3O7 are investigated by channeling technique. It has been measured the angular dependence of resonant reaction yield of 3.055 MeV He+ ions channeled from oxygen nuclei along 〈0 0 1〉 direction. The best agreement of the calculated angular dependence of the reaction yield with experimental data is achieved with the assumption that the oxygen sublattice is partly disordered. About 20% of oxygen atoms are situated in the plane (1 1 0) randomly; the oxygen atoms in oxygen chains are displaced from crystal sites at ∼0.3 Å in the (1 1 0) plane. 相似文献