Stopping cross-section and energy straggling of protons in SiC obtained by nuclear resonant reaction of protons with 12C and 28Si

In order to evaluate stopping cross-section and energy straggling of protons in compound material SiC and its constituents C and Si, resonant backscattering spectra have been measured using proton beams in an energy range 4.9–6.1 MeV per a 100 keV step. We have observed two sharp nuclear resonances at proton energies of 4.808 MeV by ¹²C and 4.879 MeV by ²⁸Si. By systematic analyses of the resonance peak profiles, i.e., energy shift of the peak position and broadening of the peak width, the values of the stopping cross-section and the energy straggling have been deduced to be compared with SRIM-2006 and Bohr’s prediction.     

Stopping power of GaAs for swift protons: Dielectric function and optical-data model calculations

The energy-loss-function (ELF) of GaAs determined from optical data has been used to calculate the electronic stopping power (SP) of swift protons in the Born approximation. Along the lines of the Ritchie–Howie scheme, a sum of Drude-type ELFs with finite damping was used to obtain an analytic representation of the experimental data at the optical limit of zero momentum transfer. Consistency was ensured by satisfying both the KK- and f-sum-rule to better than 1%. The mean excitation energy (I-value) of GaAs was calculated at 349 eV which is about 3% higher than the recent estimate of Heredia-Avalos and co-workers [S. Heredia-Avalos, J.C. Moreno-Marin, I. Abril, R. Garcia-Molina, Nucl. Inst. Meth. B 230 (2005) 118]. A simple quadratic dispersion relation used to extend the ELF to arbitrary momentum transfers was found adequate for SP calculations above ～300 keV where our results are in good agreement with the available experimental data and other sources in the literature. The limitation of the present scheme at lower proton energies is discussed.     

Molecular dynamics simulations of argon cluster impacts on a nickel film surface

In this study we probe the surface phenomena that occur on nickel thin films after argon cluster impacts by performing several simulations using various energies. The simulations are carried out based on a molecular dynamics (MD) approach. The argon cluster consists of 353 atoms with energies ranging from 1 keV to 3.0 keV. The simulation results show that when the incident energy is 1 keV, the surface retains its smoothness after impact although a slight thermal effect appears near the surface beneath the impact area. Increasing the argon cluster energy to 2 keV causes the atoms in the film to shift slightly under impact and a small hillock appears on the film surface after impact. When the cluster energy increases to 3 keV, a hemispherical crater will appear on the film surface after impact. In addition, a shock wave is generated within the film due to the impact, which propagates toward to the substrate in a hemispherical shape. These shock wave related phenomena are difficult to probe experimentally on an atomic level however molecular dynamics simulations are a suitable tool for investigating the shock wave phenomena in thin film.     

Effect of <200 keV proton radiation on electric properties of silicon solar cells at 77 K

The change in electric properties of back-field silicon solar cells was investigated under the irradiation of protons with the energies less than 200 keV at 77 K. Experimental results showed that the short circuit current, maximum output power and open circuit voltage decrease to different extent with increasing the fluence and energy of protons. Under the 120 keV proton irradiation for the fluence of 1 × 10¹⁶ cm⁻², a large amount of radiation-induced defects with the energy level H1 +0.47 eV were formed. In terms of analyzing the time dependence of electric properties, the performance lifetime of the silicon cells under the exposure of <200 keV protons was predicted.     

PIGE analysis of magnesium and beryllium

In this work, we present an alternative method for PIGE analysis of magnesium and beryllium in thick samples. This method is based on the ERYA – Emitted Radiation Yield Analysis – code, which integrates the nuclear reaction excitation function along the depth of the sample. For this purpose, the excitations functions of the ²⁵Mg(p,p′γ)²⁵Mg (E_γ = 585 keV) and ⁹Be(p,γ)¹⁰B (E_γ = 718 keV) reactions were employed. Calculated gamma-ray yields were compared, at several proton energy values, with experimental yields for thick samples made of inorganic compounds containing magnesium or beryllium. The agreement is better than 5%. Taking into consideration the experimental uncertainty of the measured yields and the errors related to the stopping power values, this agreement shows that effects as the beam energy straggling, ignored in the calculation, seem to play a minor role.     

Proton inelastic mean free path in amino acids and protein over the energy range of 0.05–10 MeV

The inelastic mean free paths (MFP) of 0.05–10 MeV protons in a group of 15 amino acids and a protein have been systematically calculated. The calculations are based on the method newly derived from the Ashley’s optical-data model and from the higher-order correction terms in stopping power calculations. Especially, in this method the new and empirical Bloch correction for the inelastic MFP was given. An evaluation for the optical energy loss function is incorporated into the present calculations because of the lack of available experimental optical data for the bioorganic compounds under consideration. The proton inelastic MFPs for these 15 amino acids and the protein in the energy range from 0.05 to 10 MeV are presented here for the first time, and the combination of these inelastic MFP data and our previous data of the SP calculations for these bioorganic compounds may form a useful database for Monte Carlo track-structure studies of various radiation effects in these materials.     

Soft X-ray fluorescence measurements of irradiated polymer films

Fluorescent soft X-ray carbon Kα emission spectra (XES) have been used to characterize the bonding of carbon atoms in polyimide (PI) and polycarbosilane (PCS) films. The PI films have been irradiated with 40 keV nitrogen or argon ions, at fluences ranging from 1 × 10¹⁴ to 1 × 10¹⁶ cm⁻². The PCS films have been irradiated with 5 × 10¹⁵ carbon ions cm⁻² of 500 keV and/or annealed at 1000°C. We find that the fine structure of the carbon XES of the PI films changes with implanted ion fluence above 1 × 10¹⁴ cm⁻² which we believe is due to the degradation of the PI into amorphous C:N:O. The width of the forbidden band as determined from the high-energy cut-off of the C Kα X-ray excitation decreases with the ion fluence. The bonding configuration of free carbon precipitates embedded in amorphous SiC which are formed in PCS after irradiation with C ions or combined treatments (irradiation and subsequent annealing) is close to either to that in diamond-like films or in silicidated graphite, respectively.     

Proton energy loss in allotropic forms of carbon

We have investigated theoretically the electronic stopping of protons in different solid forms of carbon: glassy, amorphous, graphite, diamond and C₆₀-fullerite. The energy loss is described within the dielectric formalism and the target properties are modelled by a sum of Mennin-type energy loss functions. For each allotropic carbon form, we observe remarkable differences in the stopping cross section and in the energy loss straggling at proton velocities around and lower than that corresponding to the maximum in the energy loss. A comparison of our results with available experimental data shows a reasonably good agreement.     

CdTe detector use for PIXE characterization of TbCoFe thin films

Peltier cooled CdTe detectors have good efficiency beyond the range of energies normally covered by Si(Li) detectors, the most common detectors in PIXE applications. An important advantage of CdTe detectors is the possibility of studying K X-rays lines instead the L X-rays lines in various cases since CdTe detectors present an energy efficiency plateau reaching 70 keV or more. The ITN CdTe useful energy range starts at K-K_α (3.312 keV) and goes up to 120 keV, just above the energy of the lowest γ-ray of the ¹⁹F(p, p’γ)¹⁹F reaction. In the new ITN HRHE-PIXE line, a CdTe detector is associated to a POLARIS microcalorimeter X-ray detector built by Vericold Technologies GmbH (an Oxford Instruments Group Company). The ITN POLARIS has a resolution of 15 eV at 1.486 keV (Al-K_α) and 24 eV at 10.550 keV (Pb-L_α1). In the present work, a TbCoFe thin film deposited on a Si substrate was analysed at the HRHE-PIXE system. The good efficiency of the CdTe detector at 45 keV (Tb-K_α), and the excellent resolution of POLARIS microcalorimeter at 6.403 keV (Fe-K_α), are presented and the new possibilities open to the IBA analysis of systems with traditionally overlapping X-rays and near mass elements are discussed.     

Effect of keV ion irradiation on mechanical properties of hydrogenated amorphous silicon

The susceptibility of mechanical properties of hydrogenated amorphous silicon (a-Si:H) to the implantation-enhanced disorder has been studied with the aim to extend the application field of this material in the technology of micro-electromechanical systems. Effect of keV ion irradiation on the elastic modulus, E, of hardness, H, and of root-mean-squared roughness to silicon ion implantation has been determined. The mechanical properties were evaluated by nanoindentation testing. E of 119 GPa and H of 12.3 GPa were determined for the as-prepared a-Si:H film. The implantation of silicon ions leads to a decrease in E and H, evaluated for a series of the implantation fluences in the range of 1.0 × 10¹³–5.0 × 10¹⁶ cm^?2. Surface smoothing has been observed at high fluences and low ion energy of 18 keV, suggesting that ion beam may be used as a tool to reduce the roughness of the a-Si:H surface, while keeping intact the mechanical properties inside the film. The conducted experiments show that it is possible to prepare a-Si:H films with hardness and smoothness comparable to crystalline silicon.     

External scanning micro-PIXE for the characterization of a polycapillary lens: Measurement of the collected X-ray intensity distribution

We developed a PIXE detection system for the analysis of medium-light elements which exploits a weakly focusing polycapillary lens for the transmission of the X-rays emitted from the target material to a Silicon Drift Detector. The polycapillary lens efficiently collects X-rays, while prevents back-scattered protons from impinging on the detector chip, thus avoiding electronics perturbation and consequent quality loss of PIXE spectra. The system is optimized for the detection of X-rays in the energy range 1–10 keV, when the emission from the target is induced by MeV proton beams with size of the order of a few hundreds of micrometers.This work reports the results of the lens characterization in terms of X-ray collection spot, i.e. the area of the sample actually “seen” by the lens, and its dependence on the X-ray energy. The lens properties have been measured using the external scanning microbeam facility of the Tandetron accelerator at LABEC-INFN in Florence. The detection system was used to detect X-rays from a set of pure elemental standards with an incident 3 MeV proton beam focused to a size of about 30 μm scanning an area of 1.9 × 1.6 mm². By measuring the spatial distribution of characteristic X-rays from each given material, the collection profile of the lens at the corresponding X-ray energy was obtained. Using several standards, the behaviour throughout the range 1–10 keV was examined. The sensitivity of the lens collection profile on the lens-sample out-of-focus distance was also investigated.     

MD simulations to evaluate effects of applied tensile strain on irradiation-induced defect production at various PKA energies

Molecular Dynamics (MD) simulations were conducted to investigate the influence of applied tensile strain on defect production during cascade damages at various Primary Knock-on Atom (PKA) energies of 1–30 keV. When 1% strain was applied, the number of surviving defects increased at PKA energies higher than 5 keV, although they did not increase at 1 keV. The rate of increase by strain application was higher with higher PKA energy, and attained the maximum at 20 keV PKA energy with a subsequent gradual decrease at 30 keV PKA energy The cluster size, mostly affected by strain, was larger with higher PKA energy, although clusters with fewer than seven interstitials did not increase in number at any PKA energy.     

Measurements of K-shell ionization cross-sections of S,Ca and Zn by 7–30 keV electron impact

The absolute K-shell ionization cross-sections of S, Ca and Zn by 7–30 keV electron impact have been measured. The targets were prepared by evaporating the compounds ZnS and CaF₂ to the thick pure carbon substrates. The effects of multiple scattering of electrons penetrating the target films, electrons reflected from the thick pure carbon substrates and Bremsstrahlung photons produced when incident electrons impacted on the targets are corrected by using Monte Carlo method. The uncertainties of our measured K-shell ionization cross-sections are, respectively, ～13% for S, ～15% for Ca and ～12% for Zn. The experimental results were compared with some theoretical results and available experimental data from the literature. The experimental data for S K-shell ionization cross-sections by 7–30 keV electron impact are given here for the first time.     

Interaction of fast hydrogen ions with silicon surface at glancing angles of incidence

Angular distributions of 380 keV protons reflected from (1 1 1) surface of Si monocrystal were measured in the range of projectiles glancing angle from 0.3° up to 0.8°. It is shown that increase of glancing angle causes non-linear change of such distribution parameters as angular width of the front rise, angular width of the distribution, the maximum yield value. Registered energy spectrum of reflected particles for glancing angle of 0.5° consists of several peaks with practically constant angular intervals between them and maxima weakly reducing towards lower energy region. It is experimentally shown that the most energetic peak relates to the reflection from the very surface and the rest ones are caused by successive scattering of ions by inner silicon crystallographic planes.     

Combination of resonance integral and Maxwellian 30 keV data – A sensitive test of the resonance region

This paper presents the approach of a combined use of resonance integrals and average Maxwellian cross sections (MACS) at kT = 30 keV to test and validate the resolved resonance range or its reconstructed cross section curve. Based on these two integral measurements a sensitive and energy dependent test can be provided. These two integral quantities cover with their neutron spectra the energy region between E_n = 0.5 eV up to several hundred keV, respectively, with different weighting. Our principal motivation is to produce a validation tool, sensitive to the lower and upper parts of the resonance region through the difference in the applied 1/E and kT = 30 keV Maxwell–Boltzmann spectra of the resonance integral and MACS data.     

Damage creation in α-Al2O3 by MeV fullerene impacts

Single crystals of α-Al₂O₃ were irradiated at room temperature with C₆₀ clusters at normal and grazing incidences. The extent of the induced damage was determined using Rutherford backscattering spectrometry in channeling geometry (RBS-C). A damage cross-section of 3.1 × 10⁻¹² cm² was obtained for the highest electronic stopping power (76.2 keV nm⁻¹). From electron microscopy observations continuous amorphous tracks were evidenced around the projectile trajectory and an electronic stopping power threshold for damage creation of 18 keV nm⁻¹ was also determined. The spatial correlation in depth of the cluster components were deduced from both direct track length measurements and the damage profiles extracted from RBS-C analysis. The maximal correlation length represents about one-third of the projected range (R_p) of a free carbon. Using atomic force microscopy (AFM), conically shaped hillocks corresponding to the out of plane expansion of the latent tracks were observed. These structures characterize nanometric changes of the plastic properties of sapphire induced by high electronic excitations.     

Optical contrast formation in amorphous silicon carbide with high-energy focused ion beams

Thin films (d ～ 1 μm) of hydrogenated amorphous silicon carbide (a-Si_1?xC_x:H), deposited by RF reactive magnetron sputtering with different carbon content x, have been implanted with high fluences (Φ = 1016–1017 cm^?2) of high-energy (E = 0.2–1 MeV) He⁺ ions as the implant species. The induced structural modification of the implanted material results in a considerable change of its optical properties, best manifested by a significant shift of the optical absorption edge to lower photon energies as obtained from photo-thermal-deflection spectroscopy (PDS) data. This shift is accompanied by a remarkable increase of the absorption coefficient over one order of magnitude (photo-darkening effect) in the measured photon energy range (0.6–3.8 eV), depending on the ion fluence, energy and carbon content of the films. These effects could be attributed both to additional defect introduction and increased graphitization, as confirmed by Raman spectroscopy and infra-red (IR) optical transmission measurements. The optical contrast thus obtained (between implanted and unimplanted film material) could be made use of in the area of high-density optical data storage using focused high-energy He⁺ ion beams.     

Damage accumulation in gallium nitride irradiated with various energetic heavy ions

In this work a study of damage production in gallium nitride via elastic collision process (nuclear energy deposition) and inelastic collision process (electronic energy deposition) using various heavy ions is presented. Ordinary low-energy heavy ions (Fe⁺ and Mo⁺ ions of 110 keV), swift heavy ions (²⁰⁸Pb²⁷⁺ ions of 1.1 MeV/u) and slow highly-charged heavy ions (Xeⁿ⁺ ions of 180 keV) were employed in the irradiation. Damage accumulation in the GaN crystal films as a function of ion fluence and temperature was studied with RBS-channeling technique, Raman scattering technique, scanning electron microscopy (SEM) and transmission electron microscopy (TEM).For ordinary low-energy heavy ion irradiation, the temperature dependence of damage production is moderate up to about 413 K resulting in amorphization of the damaged layer. Enhanced dynamic annealing of defects dominates at higher temperatures. Correlation of amorphization with material decomposition and nitrogen bubble formation was found. In the irradiation of swift heavy ions, rapid damage accumulation and efficient erosion of the irradiated layer occur at a rather low value of electronic energy deposition (about 1.3 keV/nm³), which also varies with irradiation temperature. In the irradiation of slow highly-charged heavy ions (SHCI), enhanced amorphization and surface erosion due to potential energy deposition of SHCI was found. It is indicated that damage production in GaN is remarkably more sensitive to electronic energy loss via excitation and ionization than to nuclear energy loss via elastic collisions.     

Experimental stopping powers of Al,Mg, F and O ions in ZrO2 in the 0.1–0.6 MeV/u energy range

The study of the stopping and range of heavy ions (Z > 3) in matter isdsc cfddc of both fundamental and practical interest as heavy ions find increasing usage in a wide range of ion beam based techniques. While semi-empirical formulations like the widely used SRIM code can predict the stopping powers of hydrogen and helium in many elemental and compound targets over a wide range of energies quite well, their predictive accuracy for heavy ions is not as good. This is mainly due to the lack of heavy ion experimental stopping power data on which such codes are based. We present results of measurements performed using a Time of Flight–Energy spectrometer to determine the stopping powers of O, F, Mg and Al ions in the oxide ceramic ZrO₂ within the 0.1–0.6 MeV/u energy range. Possible SRIM correction (or correlation) factors for F, Mg and Al ions were extracted from quantitative comparisons of experimental and predicted stopping power values.     

Early stage of the crystallization in amorphous Fe–Si layers: Formation and growth of metastable α-FeSi2

Crystallization processes of amorphous Fe–Si layers have been investigated using transmission electron microscopy (TEM). Si(1 1 1) substrates were irradiated with 120 keV Fe ions at ?150 °C to a fluence of 1.0 × 10¹⁷ cm². An Fe-rich amorphous layer embedded in an amorphous Si was formed in the as-irradiated sample. Plan-view TEM observations revealed that a part of the amorphous Fe–Si layer crystallized to the metastable α-FeSi₂ after thermal annealing at 350 °C for 8 h. The lattice parameter of c-axis decreased with thermal annealing. It was considered that the change in the lattice parameter originates from the decrease of the Fe occupancy at (0, 0, 1/2) and its equivalent positions in the unit cell of the metastable α-FeSi₂.