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1.
研究并制作了12信道并行光接收模块,单信道传输速率大于等于3.318Gbit/s,12信道并行总传输速率为40Gbit/s。模块采用工作波长在850nm的高速PIN型光电探测器(PD)列阵作为光接收器件,PD列阵与接收电路芯片直接用Au丝压焊连接,输入光信号直接由12信道的光纤阵列耦合进入PD列阵中。对光接收模块进行眼...  相似文献   

2.
10Gbit/s甚短距离传输系统接收模块研究   总被引:1,自引:0,他引:1  
本文研究了符合OIF—VSR4—01.0规范的甚短距离(VSR)并行光传输系统转换器集成电路,实现了接收部分转换器集成电路中帧同步、8B/10B解码、12路通道去斜移、检错纠错等模块的设计。在Altera的Stratix GX系列的FPGA上实现了接收部分转换器集成电路。仿真分析的结果表明所设计的各个模块能正确的实现接收部分转换器集成电路的功能,给出了仿真结果。  相似文献   

3.
A 5 Gbit/s optical receiver module was developed by using a wideband transimpedance Si IC and a high gain-bandwidth product GaInAs APD. A 6 GHz bandwidth Si IC utilising a f/sub t/=20 GHz Si MMIC process, bare chip mounting of a Si IC and an APD to minimise parasitic capacitance, made it possible to realise high speed operation and high receiver sensitivity of -31.8 dBm.<>  相似文献   

4.
A novel optical receiver module using a plastic package, a glass V-groove substrate, an edge-illuminated refracting facet photodiode and a Si bipolar preamplifier IC has been developed. Its signal lines were designed using a three-dimensional electromagnetic field analysis. For a fabricated module, a frequency response of 7.7 GHz and a sensitivity of less than -14 dBm at 10 Gbit/s were achieved  相似文献   

5.
A uni-travelling-carrier photodiode module with a 1 mm connector output port has been developed. The fabricated module shows clear eye opening at data rates of 100 and 160 Gbit/s. A high output peak voltage of 0.8 V is also achieved at a data rate of 100 Gbit/s, demonstrating a significant advantage of the uni-travelling-carrier photodiode.  相似文献   

6.
InAlAs avalanche photodiodes (APD) and SiGe-HBT preamplifier 10 Gbit/s optical receiver modules have been developed. The measured back-to-back minimum sensitivity and the optical overload with a pseudorandom binary sequence of 231 - 1 at a bit error rate of 10-9 are -29.5 and +0.4 dBm, respectively. The dynamic range is 29.9 dB. These results show the highest sensitivity and the widest dynamic range yet reported for 10 Gbit/s APD receivers  相似文献   

7.
基于IBM 0.18μm SiGe Bi CMOS标准工艺设计实现了一种高速、低功耗的光接收机前端模拟电 路。接收机芯片包括调节型共源共栅 (RGC) 跨阻放大器(TIA)、四级限幅放大器(LA)和 输出缓冲 电路(buffer)。采用高跨导SiGe异质结双极晶体管(HBT)作为输入级的RGC TIA有效隔离了 探测器结电容和输入寄生电容的影响,更好地拓展了光接收机的带宽。仿真结果表明,在1.8V电源电 压供电下,驱动50Ω电阻和10pF电容负载时 ,光接收机前端的跨阻增益为76.67dB带宽为2.1GHz 。 测试结果表明,光接收机前端电路的-3dB带宽为1.2GHz,跨阻增 益为72.2dB,在误码率(BER)为10-9的条件 下,光接收机实现了1.5Gbit/s的数据传输速率。在1. 8V电源电压 下,芯片功耗仅为44mW,芯片总面积为800 μm×370μm。  相似文献   

8.
A completely monolithic quadrature demodulator for an optical heterodyne CPFSK receiver is reported for the first time. The demodulator is realised as a GaAs MMIC and operates up to 2.5 Gbit/s at an intermediate frequency of 9.8 GHz, yielding a receiver sensitivity of -42.5 dBm  相似文献   

9.
A 10 Gbit/s optical receiver module using a Si-bipolar IC has been developed. For low power and low cost, a pure Si-bipolar IC is used in place of a GaAs IC, which is commonly used for over 10 Gbit/s. To widen the frequency bandwidth, multifeedback techniques and a two-stage buffer configuration are used in the preamplifier IC. In addition, a differential circuit configuration is used for stable operation at high frequency. The IC was fabricated using 0.25 μm Si-bipolar technology. The module exhibits sensitivity of <-16 dBm for 10 Gbit/s data with an input dynamic range >15 dB. Small power consumption of 410 mW is achieved with the single power-supply voltage of +5 V  相似文献   

10.
By transmitting 40 channels over 300 km of TeraLight fibre, it is shown that optical differential phase shift keying can be used in 100 GHz-spaced 40 Gbit/s systems, with direct detection and a simple receiving filter. Chromatic dispersion tolerance around 300 ps/nm is also measured, compared to 70 ps/nm for NRZ.  相似文献   

11.
Chow  K.K. Shu  C. 《Electronics letters》2003,39(19):1395-1397
All-optical wavelength conversion with multicasting has been demonstrated with a single electroabsorption modulator based on cross-absorption modulation. It is shown that the input signal wavelength can simultaneously convert to six different wavelengths at 10 Gbit/s, and the relation between the power penalty and the number of simultaneously operating channels is investigated.  相似文献   

12.
A low-power 2/spl times/2 switch IC using InP HEMTs as cold FETs is presented. It has a logic-level-independent interface since no signal line is grounded. The IC yields low insertion loss of 1.5-2.7 dB and high isolation of >21.2 dB below 30 GHz. When two 40 Gbit/s signals were input, error-free operation was confirmed with virtually zero power dissipation.  相似文献   

13.
63 nm continuous signal band of a 1.5 Tbit/s (75/spl times/20 Gbit/s) dense wavelength division multiplexed transmission over 200 km was demonstrated by applying Er/sup 3+/-doped tellurite fibre amplifiers.  相似文献   

14.
《Electronics letters》2005,41(25):1373-1374
A serial backplane receiver with adaptive blind decision feedback equalisation (DFE) is proposed, which can operate at up to 4 Gbit/s over 1.2 m distance, which includes discontinuities due to the packaging and backplane connectors. A reduced complexity DFE implementation is achieved by biasing high-speed comparators. DFE coefficient calculation is not performed on every consecutive received sample, which significantly reduces the design complexity and power consumption.  相似文献   

15.
For the first time experimental bit error rate curves are presented for an optically preamplified direct detection differential phase and shift keying (DPSK) communication link. DPSK offers approximately 6 dB peak power sensitivity improvement over more traditionally optically preamplified on/off keying (OOK). Using an erbium doped fibre preamplifier, a fibre Fabry-Perot filter, an optical DPSK demodulator consisting of a fibre-optic Mach-Zehnder interferometer with a 1 bit differential delay, and a balanced receiver, a sensitivity of 116 photon/bit was obtained. To the authors' knowledge these results represent the first demonstration of optically preamplified DPSK with better sensitivity than previously reported multigigabit per second heterodyne DPSK and approximately 3 dB more sensitivity on a peak power basis than previously reported preamplified OOK systems.<>  相似文献   

16.
周华 《光通信研究》2006,32(5):68-70
文章介绍了采用0.35 μm双极型互补氧化物半导体(BiCMOS)工艺制作的光纤通信用低功耗的1.25 Gbit/s限幅放大器,其电路采用3.3 V单电源供电,电路增益可以达到70 dB,功耗为20 mW,在27 dB的输入动态范围内,可以保持800 mV的恒定输出摆幅.整个芯片的面积为1.30 mm×0.75 mm.  相似文献   

17.
A transimpedance amplifier array for 12 parallel optical-fiber channels each operating at 10 Gb/s is presented, which is used in the receiver of short-distance links. It stands out for the following features: high gain (transimpedance 25 k/spl Omega/ in the limiting mode), high input sensitivity and wide input dynamic range (input current swing from 20 to 240 /spl mu/A/sub p-p/), constant output voltage swing (differential 0.5 V/sub p-p/ at 50 /spl Omega/ load), and low power consumption (1.4 W) at a single supply voltage (5 V). Each channel has its own offset-current control circuit. To the best of the authors' knowledge, the total throughput of 12/spl times/10 Gb/s=120 Gb/s is the highest value reported for a single-chip amplifier array. The target specifications have been achieved with the first technological run without needing any redesign. This fact demonstrates that the inherent severe crosstalk problems of such high-gain amplifier arrays can reliably be solved by applying adequate decoupling measures and simulation tools.  相似文献   

18.
本文介绍了一种用于10Gbit/sSDH光传输系统的光接收机。该接收机的光接口指标可满足ITU-TG.SCS建议的要求。已将该接收机用于10Gbit/s光纤传输实验。  相似文献   

19.
Ultra-long-span 500 km 16/spl times/10 Gbit/s WDM unrepeatered transmission without dedicated fibre for remote pumping is successfully demonstrated for the first time. Enabling technologies are the RZ-DPSK format, forward pumped Raman amplification, and second-order backward pumped Raman amplification in combination with enlarged effective area SMF and conventional SMF.  相似文献   

20.
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