Ionic transport studies of the glassy silver vanadomolybdate system

Ionic conductivity of the Ag₂O-MoO₃-V₂0₅ system has been studied over a wide range of frequency, temperature and composition. A narrower glass forming region has been found in comparison to the corresponding Ag₂O-MoO₃-P₂O₅ and Ag₂O-B₂O₃-P₂O₅ systems. The highest conductivity at room temperature, _rt, = 3.21 × 10^–6–1 cm^–1 (d.c.) with an activation energy,E _act, of 0.466 eV, was observed for the glass former's ratio of unity. Further, it reached a maximum value of 2.2 × 10^–2¨-1 cm^–1 withE _act = 0.153 eV when the oxide-base glass was dissolved with Agl. D.c. conductivity, hopping rate and relaxation time in the present system have been found to be characterized by the same activation energy.     

Frequency and temperature dependencies of a.c. conductivity of polyvinyl alcohol (PVA)-CoCl2 composites

The a.c. conductivity for polyvinyl alcohol (PVA)-CoCl₂ composites prepared by a casting method has been measured at different frequencies (0.1–10 kHz) in the temperature range 300–450 K. At constant temperature, the frequency dependence of a.c. conductivity, (), was found to fit the established equation () = A ^s quite well. On the other hand, the temperature dependence of a.c. conductivity suggested an electronic hopping conduction mechanism in a thermally assisted electric field. Various theoretical mechanisms have been discussed to clarify the conduction processes in these samples. The correlated barrier hopping (CBH) mechanism, proposed by Elliott, was found to be the most appropriate one.     

A.c. conductivity for amorphous TeO2-P2O5 glass system

The a.c. conductivity for the TeO₂-P₂O₅ glassy system was measured in the temperature range 300–573 K and in the frequency range 100 Hz to 10 kHz. The a.c. conductivity () increased with frequency according to the relation ()^s. The frequency exponent s was found to decrease with increasing temperature. The composition dependence of the conductivity was also investigated. The density of states was also calculated using the Elliott model. The a.c. conductivity increased over the studied temperature range. The obtained experimental data have been analysed with reference to various theoretical models. The analysis shows that the correlated barrier hopping (CBH) model is the most appropriate mechanism for conduction in the TeO₂-P₂O₅ glass system.     

The optical properties and a.c. conductivity of magnesium phosphate glasses

Magnesium phosphate [X MgO-(100–X) P₂O₅] glasses in the composition range [X=20, 25, 30, 40, 45, 50 mol %] have been made. The optical properties and a.c. conductivities were measured and their amorphous nature confirmed by X-ray diffraction technique. The variation of relative density with x was anomalous. In the ultraviolet/visible regions it was found that the fundamental absorption edge is a function of glass compositions and lower absorption coefficients, () follow the so-called Urbach edge. At lower absorption levels (1<<10⁴cm^–1), the width of the tail of localized states in the band gap, E _g, did not vary significantly with glass composition and lay in the range (0.26–0.343) eV. In the high absorption region (()>10⁴ cm^–1), the behaviour of () suggests that there are two different transition energies for electrons in k-space, namely direct allowed transitions and non-direct transitions. In the infrared region at wavelengths =2.5–30 m, the transmission spectrum has four absorption bands. Using the Kramers-Kronig theory, the optical constants (refractive index n and extinction coefficient k) have been determined from the transmission spectrum. The a.c. conductivity, (), real and imaginary dielectric constants, ₁, ₂, and loss factor, tan , have been determined at room temperature in the frequency region, = 2×10⁴–10⁶ Hz. It has previously been established theoretically that () ^s and s was found to be in the range 0.64–0.73, depending on glass composition.     

Ionic conductivity of synthetic analcime,sodalite and offretite

The ionic conductivity of pressed pellets of dehydrated synthetic analcime, sodalite and offretite was determined by a.c. measurements within the range 10 Hz to 10 MHz. The ionic conductivity values of those zeolites exchanged with various monovalent cations were determined by the complex impedance plane method. The conduction activation energies range between 63 and 101 kJ mol^–1. Sodium analcime shows the best ionic conductivity, namely 1.8×10^–4–1 cm^–1 at 400° C. A comparison with the conductivity of other ion-conducting solids was made.     

Electrical conductivity,TEP and dielectric studies on mol% 66.6 Agl-22.2 Ag2O-11.1 (0.8 V2O5-0.2 P2O5) electrolyte material for solid state batteries

In the superionic conducting quarternary system Agl-Ag₂O-V₂O₅-P₂O₅, the best ionic conductivity was obtained for the composition 66.6% Agl-33.3% (2Ag₂O-1 (V₂O₅-P₂O₅)), when the GF/GM ratio was varied from 0.20 to 5.0. Then fixing the GF/GM ratio at 0.50, the ratio of the glass formers V₂O₅ and P₂O₅ were varied and the highest conducting composition was obtained as 66.6% Agl-22.2 Ag₂O-11.1% (0.8 V₂O₅-0.2 P₂O₅). A preliminary investigation using this material in the form of an electrolyte in a solid state electrochemical cell is reported. The polycrystalline and amorphous compounds were prepared from the same melt, by open air crucible melting and the rapid quenching technique. The ionic conductivity for the best conducting polycrystalline (hence referred as 66VP82P) and amorphous (66VP82G) samples was obtained as 8.3 × 10^–3 and 4.2 × 10^{–2 –1} cm^–1 respectively. The electronic conductivity of the order 10^{–10 –1} cm^–1 was observed for 66VP82G and 10^{–8 –1} cm^–1 for 66VP82P samples. Thermoelectric power studies revealed that the charge carriers are the Ag⁺ ions, with an activation energy of 0.288eV for 66VP82G, which correlated well with the activation energy obtained from the conductivity measurements. The dielectric constant, dielectric loss and the loss tangent were calculated for both polycrystalline and glassy 66VP82 material. It was observed that the dielectric loss is more for the glassy material than the polycrystalline material. Solid state galvanic cells with 66.6% Agl-22.2% Ag₂O-11.1% V₂O₅, 66.6% Agl-22.2%-Ag₂O-11.1% P₂O₅ and 66.6% Agl-22.2% Ag₂O-11.1% (0.8 V₂O₅-0.2 P₂O₅) (coded as 66V, 66P and 66VP82 respectively) electrolytes were constructed. Both polycrystalline and amorphous electrolyte cells were fabricated for a comparative study and the polarization effects were observed to be negligible in amorphous cells. The variation of open circuit voltage with temperature was reported and the current discharge curves indicate that the 66VP82 material has higher current capacity with high current drain when compared to 66V and 66P cells.     

Bias voltage dependence properties of cadmium oxide films deposited by d.c. reactive magnetron sputtering

Cadmium oxide films were grown on glass substrates using d.c. reactive magnetron sputtering technique by sputtering from a metallic cadmium target in an oxygen partial pressure of 1×10^–3 mbar under various substrate bias voltages. The substrate bias voltage significantly influences the crystallographic structure of the deposited films. The influence of substrate bias voltage on the electrical and optical properties of the films was systematically studied. The films formed at a substrate temperature of 473 K and bias voltage of –80 V showed an electrical resistivity of 1×10^–3 cm, optical transmittance of 86%, optical band gap of 2.47 eV and a figure of merit of 7×10^{–3 –1}.     

NMR Studies on 3He-3He and 3He-4He tunneling motions in solid 3He-4He mixtures

Helium-3 nuclear spin relaxation times T ₁, T ₂, and T ₁have been measured for ³He-⁴He solid mixtures at the exchange plateau region (~0.5K). The ³He concentrations X ₃of the samples were 7.2, 2.9, 1.8, 1.4, 0.67, 0.65, and 0.22%, and their molar volumes varied between 19.9 and 20.9cm³/mole in hcp phase. The spectral density function J() for dipolar field fluctuations was determined in the low-frequency branch from T ₁measurements and in the high-frequency branch from conventional T ₁measurements. It was found that J() is given by J() = cJ()|_3–4 + (1–c)J()|_3–3, where J()|_3–4 is the spectral density function due to the ³He-⁴He tunneling motions, and J()|_3–3 is that due to the ³He-³He tunneling motions. Using the Torrey theory, the correlation frequency of the ³He-⁴He tunneling motions was evaluated from T ₁data, and was found to be in good agreement with Landesman 's theory.Supported in part by the Japan Society for the Promotion of Science through a grant to Y.H.     

Liquid-Phase Sintering and Properties of Si3N4–TiN Composites

Densification during liquid-phase sintering of Si₃N₄–TiN was studied in the presence of Y₂O₃. The content of TiN was varied from 0–50 mass%. During the densification Y-silicate was formed. The amount of silicate increased with both decreasing fraction of TiN and increasing isothermal heating time. Density, fracture toughness, and electrical resistivity were measured as a function of TiN content. It was found that the density and fracture toughness increased with increasing TiN content. The electrical resistivity drops drastically, from 10¹⁰ m for sintered Si₃N₄ to 10^–3 m for sintered Si₃N₄–TiN composite containing 30 vol% TiN.     

Ordering within precipitates in copper-nickel-titanium alloys

The precipitation process in alloys containing 4% Ti and 5 to 16% Ni was investigated using transmission electron microscopy, hardness and electrical conductivity measurements. After ageing, spherical -Ni₃Ti precipitates with ordered DO₂₂ superlattice were observed in alloys CuTiNi5 to 10 and the L1₂ superlattice in the CuTi4Ni16 alloy. With increasing nickel content the size of precipitates decreases; this has only a minor influence on the age hardening. The CuTiNi10 alloy has the best electrical conductivity approaching 18m^–1mm^–2.     

Preparation and characterization of YBa2Cu3O7?x samples for microwave applications

We prepared several samples of YBa₂Cu₃O_7–x thick films electrophoretically deposited on metallic substrates, thin films sputtered on dielectric substrates, and bulk pellets, and we tested their microwave properties. Various preparation techniques are described in detail and the importance of appropriate thermal treatment during the fabrication process is emphasized. Experimental results show that electrophoretically deposited thick films on silver substrates reached, after heat treatment, a surface resistance at 50 K of 4×10^–2 comparable with the silver value, while the same measurement before sinterization gave a value of 0.5 . Either bulk pellets or thin films gave worse results, though a lack of sensitivity in our experimental apparatus could have influenced our data. The problem of sensitivity in the characterization of microwave properties of small samples is discussed in the appendices.     

Empirical heat-exchange equation for a hydroresistor thermoanemometer

An empirical equation is obtained which well describes the heat-exchange process at the sensor of a hydroresistor thermoanemometer in the range of Reynolds numbers from 3 · 10³ to 10⁵ and with a Prandtl number of 7.5.Notation effective electrical conductivity of water in the averaging volume of the sensor, (·cm)^–1 - ₀ electrical conductivity of the surrounding medium - t effective temperature of water heating at sensor, deg - t₀ temperature of surrounding medium - R active resistance of sensor at the temperature t, - R₀ resistance at the temperature t₀ - I effective value of current through the sensor, A - F area of heating layer on sensor head, cm² - heat-transfer coefficient - D diameter of the sensor head - Nu Nusselt number - Pr Prandtl number - Re Reynolds number - circular frequency of voltage supplied to sensor, sec^–1 - magnetic permeability of the medium - v local stream velocity beyond the limits of the boundary layer at the surface of the sensor head, cm/sec - V velocity of the undisturbed stream, cm/sec - x distance from center of the microelectrode along the surface of the head, cm - f designation of functional dependence - coefficient of thermal conductivity of water - kinematic viscosity - _* electrical conductivity of water at the base temperature t_* - b temperature coefficient of electrical conductivity Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 35, No. 5, pp. 827–833, November, 1978.     

Precision submillimeter wave laser reflection measurements of high-temperature superconductors

Submillimeter wave laser reflection measurements of surface resistance can provide improved capability in the combination of sensitivity, spatial resolution, and frequency range. We have made reflectivity measurements on metals at 1630 GHz with an uncertainty of less than 0.3%. This sensitivity corresponds to a measurement sensitivity for surface resistance of 0.3 . Assuming anf ² frequency scaling of high-temperature superconductor surface resistance from the microwave to the terahertz frequency range, this sensitivity corresponds to about 1 ×10^–5 at 10 GHz. Capability for 10^–7 sensitivity could eventually be possible. Preliminary submillimeter wave reflection measurements of a YBCO thin film have been made with a sensitivity of 1%. Submillimeter wave reflectometry can make it possible to determine the spatial dependence of surface resistance in a wide range of material sizes and shapes. The spatial resolution could be on the order of 0.3–0.5 mm.     

Transport properties of CdGa2Se4 thin films

The d.c. conductivity was determined for CdGa₂Se₄ thin films in the temperature range 300–625 K for as-deposited and heat-treated films. The conductivity at room temperature of films of thickness 326 nm prepared at a temperature of 573 K was found to be 10^–12 ( cm)^–1. The dependence of the electrical conductivity on the annealing temperature in a vacuum of 1 Pa for a thin film of thickness 140 nm, shows that the electrical conductivity increases with increasing annealing temperature. However, the activation energies E and E decrease with increasing annealing temperature. The data of these annealed films are in agreement with the Meyer–Neldel rule. The thermoelectric power measurements indicate p-type conduction in the as-deposited films as well as for the heat-treated films. The p-type conduction is due to the cadmium deficiency as indicated by EDX. The difference between the value of the activation energy calculated from the thermoelectric power E _S and that obtained from the conductivity E indicates the presence of long-range potential fluctuations.     

Magnetic field dependence of zero-sound attenuation close to the pair-breaking edge in3He-B due toJ=1−,J z =±1 collective modes

Our previous theory yielded for the Zeeman splitting of the imaginaryJ=1 collective mode in³He-B the result =2+0.25J _z ( is the effective Larmor frequency). In this paper we take into account the downward shift of the pair-breaking edge from 2 to 2₂– (₂ and ₁ are the longitudinal and transverse gap parameters). This leads to a complex Landé factor: the frequencies of theJ _z =±1 components become =2+0.39J _z , and the linewidths of these resonances become finite: =0.18. The coupling amplitudes of theJ _z =±1 components to density are found to be proportional to gap distortion, (₁–₂/(/)². Our results for the ultrasonic attenuation due to theJ _z =±1,J=1 modes are capable of explaining the field dependence of the attenuation close to the pair-breaking edge as observed by Dobbs, Saunders, et al. The observed peak is caused by theJ _z =–1 component: its height increases due to gap distortion as the field is increased, and the peak shifts downward in temperature and its width increases with the field due to the complex Landé factor. TheJ _z =+1 component gives rise to a corresponding dip relative to the continuum attenuation.     

Electro-conducting glass-ceramics produced by ion-exchange and reduction treatments

The crystallization characteristics of some bismuth-containing soda-lime-silica glasses have been studied. The addition of bismuth reduces the glass transition temperature as well as the crystallization temperatures of these glasses. Electrically conducting layers have been induced in such glass-ceramics by subjecting them to a Na⁺ Ag⁺ ionexchange reaction followed by a reduction treatment in hydrogen. Resistances of the surfaces vary from 0.08 /square to 14.76 /square depending on the glass composition as well as the reduction parameters. Induced surface conductance tends to rise with the increase of volume of the crystalline phase in the parent glass. The TCR values range between 400 and 2300 p.p.m. K^–1. The thicknesses of these layers are about 130 m. The high surface conductivity arises from the percolation of the silver metallic phase in the glass-crystal boundary region. The glass-crystal interface is believed to act as heterogeneous nucleation sites.     

Thermophysical Properties of Molten Germanium Measured by a High-Temperature Electrostatic Levitator1

Thermophysical properties of molten germanium have been measured using the high-temperature electrostatic levitator at the Jet Propulsion Laboratory. Measured properties include the density, the thermal expansivity, the hemispherical total emissivity, the constant-pressure specific heat capacity, the surface tension, and the electrical resistivity. The measured density can be expressed by _liq=5.67×10³–0.542 (T–T _m ) kg·m^–3 from 1150 to 1400 K with T _m=1211.3 K, the volume expansion coefficient by =0.9656×10^–4 K^–1, and the hemispherical total emissivity at the melting temperature by _{T, liq}(T _m)=0.17. Assuming constant _{T, liq}(T)=0.17 in the liquid range that has been investigated, the constant-pressure specific heat was evaluated as a function of temperature. The surface tension over the same temperature range can be expressed by (T)=583–0.08(T–T _m) mN·m^–1 and the temperature dependence of the electrical resistivity, when r _liq(T _m)=60·cm is used as a reference point, can be expressed by r _{e, liq}(T)=60+1.18×10^–2(T–1211.3)·cm. The thermal conductivity, which was determined from the resistivity data using the Wiedemann–Franz–Lorenz law, is given by _liq(T )=49.43+2.90×10^–2(T–T _m) W·m^–1·K^–1.     

Inversion of Optical Conductivity Data in Metals

The McMillan–Rowell inversion of tunneling data has long served as one of the best methods for obtaining information about the microscopic interactions in a superconductor with strong electron–phonon interactions. In this contribution we outline a method designed to yield similar information, based on the optical conductivity. The precise inversion in this case is a more difficult problem than in tunneling. Fortunately, however, an approximate formula can be derived, which gives the inelastic scattering function, ²F(), explicitly from the data. We apply this method to K₃C₆₀, and demonstrate that the electron–phonon interaction is sufficiently strong to support the superconductivity in this compound.     

The properties of directionally-solidified eutectic and hypo-eutectic copper-zirconium alloys

Alloys of the copper-Cu₅Zr eutectic have been directionally solidified over a range of growth rates. The tensile strength was found to be high, 0.6 to 1.0 GN m^–2, in contrast to the poor electrical conductivity, typically 22 m ^–1 mm^–2. In order to improve the latter at the expense of the former, hypo-eutectic (copper-rich) alloys were also studied. Alloys of composition in the region of copper-4 wt % zirconium possessed a useful combination of properties but these were not superior to the properties of conventionally cast samples. These alloys were shown to be stable against exposure to elevated temperatures.     

Preparation of transparent,electrically conducting ZnO film from zinc acetate and alkoxide

Very uniform and transparent zinc oxide thin films doped with aluminium and indium were fabricated by the dip-coating technique using solutions prepared by the ethanolamine method. As starting materials, zinc acetate and zinc n-propoxide were used. Zinc acetate and propoxide are soluble in PrⁱOH in the presence of diethanolamine, although they are hardly soluble without the amine. The prepared solutions were very stable and suitable for dip-coating. Zinc oxide was crystallized by heating above 500 °C, and doping of aluminium and indium retarded the crystallization. The electrical resistivity of the film was decreased by doping with aluminium and indium. The lowest resistivity of 2 × 10^–2 cm was obtained by post-coating treatment in a nitrogen atmosphere.