The role of cesium fluoride as an n-type dopant on electron transport layer in organic light-emitting diodes

We report on the role of cesium fluoride (CsF) doping on the enhanced electron transport properties of tris-(8-hydroxyquinolin) aluminum (Alq₃) for organic light-emitting diodes. The electronic structures of CsF-doped Alq₃ layers with various doping concentration are characterized by in situ ultraviolet and X-ray photoelectron spectroscopies, showing an n-type electrical doping effect with Fermi level shift towards unoccupied molecular orbital and the formation of chemistry-induced gap-states. The increase in conductivity and reduction in electron injection barrier in CsF-doped Alq₃ layer with optimal doping concentration lead to the enhanced electron injection and transport, which are consistent with the improved electrical characteristics of OLEDs.     

High efficiency ITO-free flexible white organic light-emitting diodes based on multi-cavity technology

The technology of white organic light-emitting diodes (WOLEDs) is attracting growing interest due to their potential application in indoor lighting. Nevertheless the simultaneous achievement of high luminous efficacy (LE), high color rendering index (CRI), very low manufacturing costs and compatibility with flexible thin substrates is still a great challenge. Indeed, very high efficiency devices show usually low values of CRI, not suitable for lighting applications, and use expensive indium tin oxide (ITO) electrodes which are not compatible with low cost and/or flexible products. Here we show a novel low cost ITO-free WOLED structure based on a multi-cavity architecture with increased photonic mode density and still broad white emission spectrum, which allows for simultaneous optimization of all device characteristics. Without using out-coupling optics or high refractive index substrates, CRI of 85 and LE as high as 33 lm W⁻¹ and 14 lm W⁻¹ have been demonstrated on ITO-free glass and flexible substrates, respectively.     

Enhancement of light extraction of green top-emitting organic light-emitting diodes with refractive index gradually changed coupling layers

By means of refractive index gradually changed coupling layers, a highly efficient green top-emitting OLED (TOLED) with enhanced light coupling efficiency and stable colors over angles has been realized. The refractive index transition of the coupling layers including the doping layer smoothes light extraction from the semitransparent cathode metal to the air, which is the reason for the enhancement of light coupling efficiency. The doping layer in the coupling layers also acts as a microparticle diffuser to eliminate the shift in EL spectra with viewing angles. A universal simulation has also been carried out, and the result suggests that the light coupling efficiency will be enhanced further if the refractive index transition of the coupling layers is continuous.     

ITO-free down-conversion white organic light-emitting diodes with structured color conversion layers for enhanced optical efficiency and color rendering

We report our study on white organic light-emitting diodes (WOLEDs) implemented in a down-conversion scheme based on an ITO-free, cavity-enhanced blue phosphorescent OLED and a micro-structured color conversion layer (CCL) containing red and green phosphors. Cavity resonance induced by a ZnS/Ag/MoO₃ anode structure enables both efficiency enhancement/spectral refinement of blue phosphorescent OLED. In accordance with the resonance-induced effect, outcoupling assistance provided by micro-structuring of CCLs works to yield WOLEDs with both high efficiency and illumination-quality color rendering. Highly flexible WOLEDs are also demonstrated in the proposed scheme and tested at a radius of curvature of 10.8 mm to illustrate its advantages in realizing versatile next-generation light sources.     

Tunable microcavities in organic light-emitting diodes by way of low-refractive-index polymer doping

A method for enhancing the light out-coupling efficiency of organic light-emitting devices (OLEDs) has been demonstrated by blending a low-refractive-index polymer, poly(2,2,3,3,3-pentafluoropropyl methacrylate) (PPFPMA), into the emission layer. The resonant wavelength of the weak microcavity devices blueshifted accompanied with a decrease in refractive indices of the light-emitting layers after the addition of PPFPMA. Stronger directed emission toward the surface normal was obtained when the resonant wavelength became closer to the peak wavelength of intrinsic emission spectrum of the organic emitters. The luminous efficiency of the devices was enhanced by more than 20%. The results suggest that the microcavity properties of the OLEDs can be tunable through blending low-refractive-index materials.     

Small-sized Al nanoparticles as electron injection hotspots in inverted organic light-emitting diodes

Al nanoparticles, with small size and ultralow coverage on ITO, can play a key role as the electron injection hotspots in both the inverted fluorescent and phosphorescent organic light-emitting diodes. The presence of the hotspots greatly reduces the operational voltage and improves the current efficiency of the devices, which are strongly dependent on the hotspot size. The microscopic and spectroscopic characterization demonstrate that the small-sized hotspots have a minor influence on the surface roughness, transparency and work function of ITO. The hotspot effect is ascribed to the highly efficient electron injection at the Al nanoparticles enhanced by the local electric field, and a physical model is proposed to clarify this mechanism. The finding indicates a promising strategy by design and craft of the injection hotspots in nanoscale to facilitate carrier injection in organic thin film devices.     

Features of the current-voltage characteristics in thin conductive layers of organic light-emitting diodes

The current-voltage characteristic of a thin organic layer located between conductive electrodes is analytically modeled. To this end, a theoretical model is developed which considers not only the interaction of an injected carrier with its mirror charge “reflected” in the nearest electrode, but also the effect of multiple reflections and the injection current from the opposite electrode. The current-voltage characteristics at various temperatures and barrier heights are compared to the model previously developed by Arkhipov et al. The limits of applicability of this model are determined. At low temperatures and voltages, the effect of multiple reflections becomes significant, which cause an increase in the current. These results should be considered when testing individual thin layers constituting multilayer organic light-emitting diodes.     

Effect of electron injection and transport materials on efficiency of deep-blue phosphorescent organic light-emitting devices

We investigate the performance of FIr6-based deep-blue phosphorescent organic light-emitting devices (PHOLEDs) with three different electron transport materials, bathocuproine (BCP), 4,7-diphenyl-1,10-phenanthroline (BPhen), and tris[3-(3-pyridyl)mesityl]borane (3TPYMB), and study the effect of doping alkaline metals (Li and Cs) into these charge transport materials. External quantum efficiency (η_EQE) of (20 ± 1)% and peak power efficiency (η_P) of (36 ± 2) lm/W were achieved maintaining Commission Internationale de L’Eclairage (CIE) coordinates of (x = 0.16, y = 0.28) in p-i-n dual-emissive-layer (D-EML) deep-blue PHOLEDs with 3TPYMB as the electron transport material and 3TPYMB:Cs as the electron injection layer. The high efficiencies are attributed to the high triplet energy of 3TPYMB as well as the increased conductivity of 3TPYMB:Cs.     

Color stable and low driving voltage white organic light-emitting diodes with low efficiency roll-off achieved by selective hole transport buffer layers

White organic light-emitting diodes (WOLEDs) showing high color stability, low operating voltage, high efficiency and low efficiency roll-off by adopting different hole transport buffer layers which also behaves as electron/exciton blocking layers (EBL) have been developed. The characteristics of WOLEDs based on blue–green and orange phosphors could be easily manipulated by hole transport buffer layer, which tailors charge carrier transportation and energy transfer. Our WOLEDs show low operating voltages, 100 cd/m² at 3.2 V, 1000 cd/m² at 3.7 V and 10000 cd/m² at 4.8 V, respectively, and achieve a current efficiency of 35.0 cd/A, a power efficiency of 29.0 lm/W at a brightness of 1000 cd/m², and a low efficiency roll-off 8.7% calculated from the maximum efficiency value to that of 5000 cd/m².     

The doping effect of cesium-based compounds on carrier transport and operational stability in organic light-emitting diodes

The doping effect of cesium compounds (i.e., Cs₂CO₃, CsN₃ and CsF) doped electron injection layer (EIL) on charge transport properties and operational stability of organic light-emitting diodes (OLEDs) was systematically investigated in this work. It has been found that device characteristics and lifetime are highly dependent on the doping constituent materials. The doping of cesium compounds in EIL can improve the charge injection and transport of OLEDs, due to the increase in conductivity and reduction in electron injection barrier. Apart from the difference in electrical characteristics, the operational stability of OLEDs is strongly influenced by the doping mechanism of different cesium compounds in the EILs. The OLED device using Cs₂CO₃ as the n-type dopant for the EIL shows a superiority in both electrical property and operational lifetime.     

Hole injection polymer effect on degradation of organic light-emitting diodes

Polythienothiophene:poly(perfluoroethylene-perfluoroethersulfonic acid) (PTT:PFFSA) has been used to enhance hole injection into small molecule OLEDs. Compared to devices with polyethylene dioxythiophene polystyrene sulfonate (PEDOT:PSS) as the hole injection layer (HIL), the OLED using PTT:PFFSA as a HIL gives enhanced efficiency and a slower luminance decay as well as a slower rise in operating voltage. Further studies of capacitance–voltage characteristics reveal that positive trapped charges accumulate in the hole transporting layer during operation. These results thus highlight the significance of hole injection layer to OLED operational stability.     

High barrier properties of transparent thin-film encapsulations for top emission organic light-emitting diodes

This paper reported a low-temperature thin film encapsulation (TFE) process based on atomic layer deposition Al₂O₃ layer for top-emission organic light-emitting devices (TE-OLEDs). The barrier characteristics of both H₂O-based and O₃-based Al₂O₃ films were investigated. O₃-based Al₂O₃ TFE showed lower water vapor transmission rate (WVTR) of 8.7 × 10⁻⁶ g/m² day and longer continuous operation lifetime of 5 folds compared to the device with H₂O-based Al₂O₃ TFE under identical environmental and driving conditions. Furthermore, the extraction of emitting light of the devices with barrier layer was enhanced compared to the bared one. The theory simulation data were consistent with our experimental results and showed the potential for the design of TFE structures optimized for enhancing light transmission.     

Plasma-tolerant structure for organic light-emitting diodes with aluminum cathodes fabricated by DC magnetron sputtering: Using a Li-doped electron transport layer

We fabricate aluminum cathodes that are almost free from plasma damage by DC magnetron sputtering for organic light-emitting diodes (OLEDs). While sputtering is widely known to have numerous advantages over conventional evaporation for mass production of devices, it can cause serious damage to organic layers. In this report, we fabricate devices that are free from plasma damage by introducing a 1%-Li-doped electron transport layer (ETL). The difference of external electroluminescence quantum efficiency between OLEDs with the structure ITO/α-NPD/ETL/Al (where ITO is indium tin oxide and α-NPD is N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine) with Al cathodes deposited by conventional evaporation or sputtering is 0.1%, and their driving voltage is identical. We find that the Li-doped ETL should be thicker than 40 nm. Analysis of the depth profile of the ETL by time-of-flight secondary ion mass spectrometry indicates that considerable damage from sputtering extended to a depth of approximately 30 nm, suggesting that high-energy particles penetrated about 30 nm into the ETL.     

Sub-micron pinhole detection in the cathode of organic light-emitting diodes

A technique is presented on tracing the sub-micron pinholes that result in black spots in organic light-emitting diodes (OLED) when exposed to ambient atmosphere. The mystery about the type and nature of tiny pinholes present in the OLED cathode that allow oxygen and/or moisture ingress in minute quantities causing black spot formation, is clarified. The technique can accurately locate nanodefects or pinholes in the center of black spots of various sizes, even on a centimeter scale. Pinholes in the investigated OLEDs were shown to be caused by different particles originating from various locations in the device stack. Defects in the Ba-Al cathode of a solution processed polymer LED (PLED) and pinholes in the LiF-Al cathode of a thermally evaporated small molecule organic LED (smOLED) were investigated and compared. The technique is a powerful tool for inspection and can, thereby, accelerate the process optimization for OLED fabrication.     

Improving the performance of organic light-emitting diodes containing BCP/LiF/Al by thermal annealing

In this paper, we examined the effect of post-packaging annealing on the performance of organic light-emitting diodes containing tris-(8-hydroxyquinoline) aluminum (Alq,) or 2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) in direct contact with a LiF-Al bilayer cathode. The detailed electroluminescent (EL) characteristics were compared before and after annealing at 70 /spl deg/C for 5 hrs. It was found that better luminous efficiency as well as greater power efficiency could be achieved for devices with BCP/LiF/Al structure. However, other devices consisting of Alq/sub 3//LiF/Al were less affected. It is believed that the thermal treatment helps to enhance the electron injection for the former, and less helpful for the latter.     

Effect of the greenish-yellow emission on the color rendering index of white organic light-emitting devices

Effect of the greenish-yellow emission on the color rendering index (CRI) of white organic light-emitting devices (WOLEDs) was demonstrated. The correlated color temperature and CRI of the three-component WOLEDs were numerically modeled. The simulation predicted that the greenish-yellow emission is beneficial to improve the CRI of three-component WOLED. The corresponding hybrid WOLED with greenish-yellow dopant was carefully designed and fabricated. In a tolerable deviation from the Planckian locus, such WOLED shows general CRI values above 85 and a power efficiency of 10.4 lm/W.     

Above 20% external quantum efficiency in green and white phosphorescent organic light-emitting diodes using an electron transport type green host material

Highly efficient green and white phosphorescent organic light emitting diodes were developed using a green phosphorescent host material based on phenyl substituted spirobifluorene. A high quantum efficiency of 25.3% was achieved in the green phosphorescent device and a high quantum efficiency of 21.6% was obtained in the white device with a stacked emitting structure of deep blue and red:green emitting layers.     

Engineering of charge transport materials for universal low optimum doping concentration in phosphorescent organic light-emitting diodes

A universal low optimum doping concentration of below 5% was demonstrated in phosphorescent organic light-emitting diodes (PHOLEDs) by managing the energy levels of charge transport materials. The device performances of PHOLEDs could be optimized at a low doping concentration of 3% irrespective of the host material in the emitting layer. The suppression of charge trapping and hopping by the dopant through charge transport layer engineering optimized the device performance at low doping concentration. In addition, it was revealed that PHOLEDs with low optimum doping concentration show better quantum efficiency, low efficiency roll-off and low doping concentration dependency of the device performance.     

Effect of interface states on electron transport in 4H-SiCinversion layers

The effect of trapping in interface states on channel conductance and field-effect mobility in SiC MOSFETs is studied experimentally and theoretically. Hall effect measurements in n-channel MOS devices with varying densities of interface states were used to determine the effect of trapping on carrier mobility. The dependence of electron mobility on immobile interfacial charge density was quantified and was found to be similar to that in silicon, provided that the mobility is normalized to μ₀, the value in the absence of Coulomb scattering. A relationship has been established between the ratio of field-effect mobility to the actual carrier mobility and the density of interface states at the Fermi energy