Preparation and characterization of pulsed laser deposited CdS/CdSe bi-layer films for CdTe solar cell application

CdS/CdSe bi-layer film was prepared by pulsed laser deposition with different substrate temperatures as an improved window layer for CdTe solar cells. The total thickness of each CdS/CdSe bi-layer film was about 70 nm, which could contribute to comparatively high transmittance of photons and, therefore, improving the photocurrent. Substrate temperature influenced the properties of the CdS/CdSe bi-layer films and the study showed that the bi-layer film prepared at 400 °C achieved the best optical transmittance and crystallinity. The crystal structure and optical transmittance of CdS/CdSe/CdTe stack before and after CdCl₂ annealing treatment were investigated by utilizing X-ray diffraction and UV/Vis spectrophotometer, respectively. It showed that further CdCl₂ annealing treatment improved the inter-diffusion of Se into CdTe, facilitating the formation of a CdTe_1−xSe_x alloy in the absorber layer. Comparing with CdTe, the alloy actually showed a smaller band gap which produced an obvious red shift of the absorption edge in long wavelength region. CdSe window layer was consumed by the inter-diffusion, while enhanced the short wavelength response in the range of 300–500 nm. The device based on CdS/CdSe window layer realized a J_SC enhancement due to the improved collection within both short and long wavelength regions accompany with a V_OC enhancement when compared to CdS/CdTe solar cell. The CdTe cell with CdS/CdSe bi-layer window deposited at 200 °C showed an efficiency of 13.47% with V_OC of 791 mV and J_SC of 27.40 mA/cm².     

Carbazole based A-π-D-π-A dyes with double electron acceptor for dye-sensitized solar cell

Three novel carbazole-based A-π-D-π-A-featured dyes (CSG1–CSG3) have been designed, synthesized for applications in dye-sensitized solar cells and fully characterized with NMR, MS, IR, UV–vis and electrochemical measurements. These dyes share the same donor (N-hexylcarbazole) and acceptor/anchoring group (cyanoacrylic acid), but differs in conjugated linkers incorporated, such as benzene, furan or thiophene, to configure the novel A-π-D-π-A framework for effective electron flow. The power conversion efficiencies were observed to be sensitive to the π-bridging linker moiety. The photovoltaic experiments showed that dye with a benzene linker exhibited a higher open-circuit voltage (0.699 V) compared to thiophene and furan linker. Among all dyes, CSG2 containing a thiophene linker exhibited the maximum overall conversion efficiency of 3.8% (J_SC = 8.90 mA cm⁻², V_OC = 584 mV, FF = 0.74) under standard global AM 1.5 G solar condition. Under similar fabrication conditions, champion dye N719 exhibited the maximum overall conversion efficiency of 6.4% (J_SC = 14.74 mA cm⁻², V_OC = 606 mV, FF = 0.716).     

D–A copolymer with high ambipolar mobilities based on dithienothiophene and diketopyrrolopyrrole for polymer solar cells and organic field-effect transistors

Donor–acceptor (D–A) type conjugated polymers have been developed to absorb longer wavelength light in polymer solar cells (PSCs) and to achieve a high charge carrier mobility in organic field-effect transistors (OFETs). PDTDP, containing dithienothiophene (DTT) as the electron donor and diketopyrrolopyrrole (DPP) as the electron acceptor, was synthesized by stille polycondensation in order to achieve the advantages of D–A type conjugated polymers. The polymer showed optical band gaps of 1.44 and 1.42 eV in solution and in film, respectively, and a HOMO level of 5.09 eV. PDTDP and PC₇₁BM blends with 1,8-diiodooctane (DIO) exhibited improved performance in PSCs with a power conversion efficiency (PCE) of 4.45% under AM 1.5G irradiation. By investigating transmission electron microscopy (TEM), atomic force microscopy (AFM), and the light intensity dependence of J_SC and V_OC, we conclude that DIO acts as a processing additive that helps to form a nanoscale phase separation between donor and acceptor, resulting in an enhancement of μ_h and μ_e, which affects the J_SC, EQE, and PCE of PSCs. The charge carrier mobilities of PDTDP in OFETs were also investigated at various annealing temperatures and the polymer exhibited the highest hole and electron mobilities of 2.53 cm² V⁻¹ s⁻¹ at 250 °C and 0.36 cm² V⁻¹ s⁻¹ at 310 °C, respectively. XRD and AFM results demonstrated that the thermal annealing temperature had a critical effect on the changes in the crystallinity and morphology of the polymer. The low-voltage device was fabricated using high-k dielectric, P(VDF-TrFE) and P(VDF-TrFE-CTFE), and the carrier mobility of PDTDP was reached 0.1 cm² V⁻¹ s⁻¹ at V_d = −5 V. PDTDP complementary inverters were fabricated, and the high ambipolar characteristics of the polymer resulted in an output voltage gain of more than 25.     

Novel D–A–π–A carbazole dyes containing benzothiadiazole chromophores for dye-sensitized solar cells

New D–A–π–A carbazole dyes containing benzothiadiazole chromophores were designed and synthesized for application in dye-sensitized solar cells (DSSCs). The light-harvesting capabilities and photovoltaic performance of these dyes were investigated systematically through comparison of different π-bridges and acceptors. Compared with thiophene bridge, benzene bridge provides improved IPCE and V_OC, which leads to better photoelectricity conversion efficiency. Dyes with cyanoacetic acid acceptor display superior photovoltaic properties though with shorter absorption maximum and lower molar absorption coefficient compared with dyes with rhodanine acetic acid acceptor. Therefore, dye with benzene bridge and cyanoacetic acid acceptor shows the most efficient photoelectricity conversion efficiency and has the maximum η value of 5.40% (V_OC = 710 mV, J_SC = 10.99 mA/cm², and ff = 0.71) under simulated AM 1.5 irradiation (100 mW/cm²).     

Synthesis and photovoltaic properties of organic dyes containing N-fluoren-2-yl dithieno[3,2-b:2′,3′-d]pyrrole and different donors

New organic dyes containing fluorene appended dithienopyrrole as electron rich linker, different arylamine/heterocyclic units as conjugating donors and cyanoacrylic acid as acceptor have been synthesized and characterized as sensitizers for dye-sensitized solar cells. The effect of different conjugated donors such as triarylamine, carbazole and phenothiazine on the photophysical, electrochemical and photovoltaic properties is investigated. The optical and electrochemical properties of the dyes are strongly influenced by conjugating donors. The dye containing phenothiazine donor exhibited longer wavelength absorption and low oxidation potential. The time dependent density functional calculations performed on the dye models reveal charge transfer character for the longer wavelength absorption. The dye-sensitized solar cells fabricated using a dye containing fluorenyldiphenylamine donor displayed highest power conversion efficiency (6.81%) in the series originating from the high short circuit current density (J_SC = 14.01 mA cm⁻²) and high open circuit voltage (V_OC = 738 mV).     

Electrical properties and barrier modification of GaAs MIS Schottky device based on MEH-PPV organic interfacial layer

We report fabrication and electrical characterization of GaAs based metal-interfacial layer-semiconductor (MIS) device with poly[2-methoxy-5-(2^/-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV), as an interfacial layer. MEH-PPV raises the barrier height in Al/MEH-PPV/p-GaAs MIS device as high as to 0.87 eV. A Capacitance-Voltage (C–V) characteristic exhibits a low hysteresis voltage with an interface states density of 1.69×10¹¹ cm⁻² eV⁻¹. Moreover, a high transition frequency (f_c) of about 50 kHz was observed in the accumulation mode. The photovoltaic response of Al/MEH-PPV/p-GaAs device was measured under the air masses (AM) 1.0 and 1.5. The open circuit voltage (V_OC), short circuit current (I_SC), fill factor and the efficiency of the Al/MEH-PPV/p-GaAs device were found to be 1.10 V, 0.52 mA, 0.65, and 5.92%, respectively, under AM 1.0 condition.     

Fabrication of a counter electrode using glucose as carbon material for dye sensitized solar cells

Carbon material was produced from the graphitization of glucose at high temperature in flowing argon. The produced carbon material was characterized using Scanning electron microscopy, Transmission electron microscopy, Raman spectroscopy and XRD. Carbon slurry of the produced carbon was made in ethanol by using polyvinylpyrrolidone (PVP) as surfactant. Carbon slurry was coated homogeneously on fluorine doped tin oxide (FTO) glass by a doctor blade technique and applied as counter electrode for dye synthesized solar cell. The current density (J) and open circuit voltage (V_OC) of fabricated cell was 8.30 mA cm⁻² and 0.77 V respectively. The efficiency of the cell was 3.63%, which is comparable to 5.82% of cell with platinum counter electrode under the same experimental conditions.     

Enhance the performance of quantum dot-sensitized solar cell by manganese-doped ZnS films as a passivation layer

To make quantum dot-sensitized solar cells (QDSSCs) more attractive, it is necessary to achieve higher power conversion efficiency. A novel Mn-doped ZnS has been successfully fabricated on CdS/CdSe quantum dots (QDs) by simple successive ion layer adsorption and reaction (SILAR) technique. The Mn-doped ZnS is used as a passivation layer in the QDSSCs. The performance of the QDSSCs was examined in detail using sulfide/polysulfide electrolyte with a Pt or copper sulfide (CuS) counter electrode. Here we demonstrated, the fabricated Mn-doped ZnS QDs shows an improved V_oc (0.65 V) compared to bare ZnS QDs (0.60 V). The QDSSC based on a photoanode with Mn-doped ZnS (10 wt% of Zn) shows higher J_sc (15.32 mA cm⁻²) and power conversion efficiency (4.18%) compared to the bare ZnS photoanode (2.90%) under AM 1.5 G one sun illumination. We explore the reasons for this enhancement and demonstrated that it is caused by improved passivation of the ZnS surface by Mn ions, leading to a lower recombination of photo-injected electrons with the electrolyte. The effect of Cu ions in ZnS has been investigated by UV–Vis spectra and current density–voltage analysis.     

Application of sputter-deposited amorphous and anatase TiO2 as electron-collecting layers in inverted organic photovoltaics

We demonstrate the deposition of amorphous and anatase TiO₂ on indium tin oxide (ITO) substrates via the process of sputtering, and the use of these materials as electron-collecting layers (ECLs) in inverted-type organic photovoltaics (OPVs). Anatase TiO₂ was obtained via vacuum-annealing of as-deposited amorphous TiO₂ at 300 °C. No deterioration of optical and electrical properties of ITO was observed after both sputter-deposition of TiO₂ and annealing process. The anatase TiO₂ proved to be an effective ECL when employed in inverted OPVs using bulk heterojunction photoactive layer of poly(3-hexylthiophene) and [6,6]-phenyl-C61-butyric acid methyl ester, achieving a power conversion efficiency of 3.3% (J_SC = 9.0 mA cm^?2, V_OC = 0.62 V and FF = 0.60).     

Sb2(SxSe1−x)3 sensitized solar cells prepared by solution deposition methods

Solid state semiconductor sensitized solar cells are a very active research subject in emerging photovoltaic technologies. In this work, heterojunctions of antimony sulfide-selenide (Sb₂(S_xSe_1−x)₃) solid solution as the absorbing material and cadmium sulfide coated titanium dioxide (TiO₂/CdS) as the electron conductor have been developed with solution deposition methods such as spin-coating, successive ionic layer adsorption and reaction (SILAR), and chemical bath deposition. In particular, CdS has been deposited on mesoporous TiO₂ layers by SILAR deposition, followed by the chemical deposition of Sb₂(S_xSe_1−x)₃. It was found that by increasing the number of CdS SILAR deposition, both the open circuit voltage V_oc and the short circuit current density J_sc of the Sb₂(S_xSe_1−x)₃ sensitized solar cells had been increased from 153 to 434 mV and 0.77–9.73 mA/cm², respectively. This improvement was attributed to the fact that the presence of the CdS on TiO₂ surface reduces the formation of undesired Sb₂O₃ and promotes a better nucleation of the Sb₂(S_xSe_1−x)₃ during the chemical bath deposition. The best result was obtained for the solar cell with 30 cycles of CdS which produced a V_oc of 434 mV, a J_sc of 9.73 mA/cm², and a power conversion efficiency of 1.69% under AM1.5 G solar radiation.     

Enhanced performance in inverted polymer solar cells via solution process: Morphology controlling of PEDOT:PSS as anode buffer layer by adding surfactants

Inverted polymer solar cells were fabricated by adding the amphiphilic surfactant ‘Surfynol 104 series’ to Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as a anode buffer layer by solution process. With the introduction of Surfynol 104 series-added PEDOT:PSS, it was able to form a homogeneous film by adjusting the wettability of a hydrophobic poly(3-hexylthiophene) (P3HT):[6,6]-phenyl C₆₁-butyric acid methyl ester (PCBM) film. With decrease in series resistance (R_S) and increase in shunt resistance (R_SH), as a result, the short circuit current density (J_SC), open circuit voltage (V_OC) and fill factor (FF) of the optimized device were 10.2 mA/cm², 0.63 V and 61.3%, respectively, calculated the power conversion efficiency (PCE) was 4.0%. In addition, the air stability of the fabricated device was improved.     

Novel organic dyes containing N-bridged oligothiophene coplanar cores for dye-sensitized solar cells

Three novel organic dyes adopting fully-fused coplanar heteroarene as the donor moieties end-capped with two cyanoacrylic acids as acceptors and anchoring groups have been synthesized, characterized, and used as the sensitizers for dye-sensitized solar cells (DSSCs). The photophysical and electrochemical properties of the novel dyes and the characteristics of the DSSCs based on the novel organic dyes were investigated. The incorporation of the coplanar cores with electron-donating N-bridges are beneficial for the better intramolecular charge transfer (ICT), giving these new dyes good light-harvesting capability. The LUMO energy levels of these coplanar heteroacene-based dyes are sufficiently high for the efficient electron injection to TiO₂ upon photo-excitation, while the suitable HOMOs allow the regeneration of oxidized dyes with the electrolyte redox (I⁻/I₃⁻). The structural features of the coplanar cores (penta vs. hexa heteroarene) as well as the alkyl substitutions play crucial roles in governing the physical properties and device performance. Among these three novel organic sensitizers, the EHTt dye composed of a fully fused hexa-arene core and less bulky N-alkyl groups caused the DSSC to show the best photovoltaic performance with an open-circuit voltage (V_OC) of 0.58 V, a short-circuit photocurrent density (J_SC) of 13.72 mA/cm², and a fill factor (FF) of 0.69, yielding an overall power conversion efficiency (PCE) of 5.52% under AM 1.5G solar irradiation.     

Sol–gel derived nanocrystalline ZnO photoanode film for dye sensitized solar cells

Nanocrystalline ZnO was synthesized from zinc (II) acetate/oxalate mixture using a facile sol–gel synthesis and is characterized by techniques such as powder XRD, FTIR and Raman spectroscopy, TEM and SEM. The TEM and SEM study showed that the nanocrystalline ZnO powder and film have an average particle size of 25 nm. This material has been successfully applied as photoanodes in dye sensitized solar cells (DSCs) constructed with standard N719 dye and conventional iodide/triiodide (I⁻/I₃⁻) electrolytes. A systematic investigation of the performance of DSCs with film thickness and dyeing time had also been carried out. Among the five different film thicknesses 4, 8, 12, 16 and 20 μm prepared, the best result was obtained for the film thickness of 16 μm for 2 h dying showing an efficiency of 2.2% with a J_SC of 4.7 mA cm⁻² and a very high fill factor of >73%.     

A study on phase transformation of SnOx thin films prepared by reactive magnetron sputtering

In the paper, SnO_x thin films were deposited by reactive magnetron sputtering from a tin target in O₂ containing working gas. The evolution from Sn-containing SnO to tetravalent SnO₂ films was investigated. The films could be classified into three groups according to their optical band gaps, which are E_g<2.5 eV, E_g=3.0–3.3 eV and E_g>3.7 eV. The electric measurements show that high conductivity can be obtained much easier in SnO₂ than in SnO films. A high electron mobility of 15.7 cm² V⁻¹ s⁻¹, a carrier concentration of 1.43×10²⁰ cm⁻³ and a resistivity of 2.8×10⁻³ Ω cm have been achieved in amorphous SnO₂ films. Films with the optical band gap of 3.0–3.3 eV remain amorphous though the substrate temperature is as high as 300 °C, which implies that °btaining high mobility in p-type SnO is more challenging in contrast to n-type SnO₂ films.     

Pulse electrodeposited copper indium sulpho selenide films and their properties

Copper indium sulpho selenide films of different composition were deposited by the pulse plating technique at 50% duty cycle (15 s ON and 15 s OFF). X-ray diffraction studies indicated the formation of single phase chalcopyrite copper indium sulpho selenide films. Transmission Electron Microscope studies indicated that the grain size increased from 10 nm–40 nm as the selenium content increased. The band gap of the films was in the range of 0.95 eV–1.44 eV. Room temperature resistivity of the films is in the range of 16.0 Ω cm–33.0 Ω cm. Films of different composition used in photoelectrochemical cells have exhibited photo output. Films of composition, CuInS_0.9Se_0.1 have exhibited maximum output, a V_OC of 0.74 V, J_SC of 18.50 mA cm^?2, ff of 0.75 and efficiency of 11.40% for 60 mW cm^?2 illumination.     

Influence of aluminium electrode preparation on PCE values of polymeric solar cells based on P3HT and PCBM

The main goal of the paper was investigation of influence of aluminum electrode preparation via thermal evaporation (TE) and the magnetron sputtering (MS) on power conversion efficiency (PCE) of polymeric solar cells. The photovoltaic properties of such three kinds devices based on poly(3-hexylthiophene-2,5-diyl) (P3HT) as ITO/P3HT/Al, ITO/P3HT:PCBM (1:1, w/w)/Al and ITO/PEDOT:PSS/P3HT:PCBM (1:1, w/w)/Al were investigated. For the constructed devices impedance spectroscopy were analyzed. For devices lack of PEDOT:PSS layer or lack of PCBM, photovoltaic parameters were very low and similar to the parameters obtained for device with Al electrode prepared by magnetron sputtering. The devices comprising PEDOT:PSS with P3HT:PCBM showed the best photovoltaic parameters such as a V_OC of 0.60 V, J_SC of 4.61 mA/cm², FF of 0.21, and PCE of 5.7 × 10^?1%.     

Improved performance of nanoporous TiO2 film in dye-sensitized solar cells via ZrCl4 and TiCl4 surface co-modifications

In this study, nanoporous TiO₂ films were modified by a dip-coating process using a mixture aqueous solution of ZrCl₄ and TiCl₄ followed by calcination to prepare a photoanode for dye-sensitized solar cells. Compared with the control film modified with 0.04 mol L⁻¹ TiCl₄, the power conversion efficiency of the TiO₂ film modified with a mixed solution of 0.05 mol L⁻¹ ZrCl₄ and 0.04 mol L⁻¹ TiCl₄, was 18.67% higher because of the improved short circuit current (J_sc) and open circuit voltage (V_oc). The improvement in J_sc was due to the suppression of charge recombination, which was demonstrated by a series of measurements, including electrochemical impedance spectroscopy, monochromatic incident photon-to-electron conversion efficiency spectroscopy, and the open-circuit voltage decay technique. The Mott-Schottky measurement results indicated that the negative shift of a flat band led to the increased V_oc.     

All-solid solar cells with hybrid perovskite absorbers and graphene electron transport layers

This work reports the perovskite/titanium dioxide (TiO₂)heterojunction solid state solar cells (SSSCs) with a hole transport material (HTM) and graphene electron transport layer. The effects of a nanostructure CH₃NH₃PbI₃ perovskite thin film, the HTM, and graphene electron transport layer in SSSC structure were examined. The SSSCs prepared with the optimal parameter exhibited a short-circuit current density (J_SC), open-circuit voltage (V_OC), and power conversion efficiency (η) of 17.89 mA/cm², 0.89 V, and 6.91%, respectively. Obvious improvements in power conversion efficiency of the SSSCs were observed by using the HTM and graphene electron transport layer. The HTM and graphene thin films provide a great hole and electron transfer channel for the photogenerated carriers to external circuit, respectively.     

2,6-Conjugated Bodipy sensitizers for high-performance dye-sensitized solar cells

A series of novel 2,6-conjugated Bodipy metal-free organic dyes (UY5–8) with phenothiazine (PTZ) moiety as electron donor for the dye-sensitized solar cells (DSSCs) have been designed and synthesized. The optical, electrochemical properties and photovoltaic performances are extensively investigated. The structure–property relationship shows that the introduction of various auxiliary conjugated spacers and anchoring groups are favorable to changing the efficiency of DSSCs. Among these dyes, UY7 comprised of furan with lower resonance energy as linker and cyanoacetic acid unit as electron acceptor possesses a flatter structure and longer electron recombination lifetime. Hence, a DSSCs using UY7 showing best photovoltaic performance with a short-circuit photocurrent density (J_sc) of 13.64 mA cm⁻², an open-circuit photovoltage (V_oc) of 590 mV and a fill factor (ff) of 0.66, corresponding to an overall conversion efficiency (η) of 5.31% under 100 mW cm⁻² simulated AM 1.5 G solar irradiation. This is the best reported result in the solar cell with a Bodipy dye as photosensitizer.