Bimodal and monomodal diamond particle effect on the thermal properties of diamond-particle-dispersed Al–matrix composite fabricated by SPS

Diamond-particle-dispersed aluminum (Al) matrix composites consisting of monomodal and bimodal diamond particles were fabricated in spark plasma sintering process, where the mixture of diamond, pure Al and Al–5 mass% Si alloy powders were consolidated in liquid and solid co-existent state. Microstructures and thermal properties of the composites fabricated in such a way were investigated and the monomodal and bimodal diamond particle effect was evaluated on the thermal properties of the composites. The composites can be well consolidated in a temperature range between 773 K and 878 K and scanning electron microscopy detects no reaction product at the interface between the diamond particle and the Al matrix. Relative packing density of the composite containing monomodal diamond particles decreased from 99.1% to 87.4% with increasing volume fraction of diamond between 50% and 60%, whereas that of the composite containing bimodal diamond particles was higher than 99% in a volume fraction of diamond up to 65%. The thermal conductivity of the composite containing bimodal diamond particles was higher than that of the composite containing monomodal diamond particles in a volume fraction of diamond higher than 60%. The coefficients of thermal expansion (CTEs) of the diamond-particle-dispersed Al–matrix composites fall in the upper line of Kerner model, indicating good bonding between the diamond particle and the Al matrix in the composite. The thermal conductivity of the composite containing 70 vol.% bimodal diamond particles was 578 W/m K and its CTE was 6.72 × 10⁻⁶ at R.T.     

Direct comparison of charge transport and electronic traps in polymer–fullerene blends under dark and illuminated conditions

A direct comparison of charge transport and electronic traps in representative polymer–fullerene blend, poly (3-hexylthiophene) (P3HT) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61 (PCBM), is carried out in dark and illuminated conditions based on the measurements of temperature-dependent current–voltage characteristics. In dark condition, the charge transport presents a transition from Ohmic to trap-limited current. While the trap-filled space charge limited current is observed under illumination at the same applied bias. From evaluations of trap density and energy distribution by a differential method, it is reveal that the diverse charge transport in dark and illuminated conditions is mainly caused by the different trap states distribution, which strongly affects the space charges and the electrical field in P3HT: PCBM blends.     

Effect of cadmium concentration and laser irradiation on photoconductivity of CdxSe100−x thin films

In this paper we have studied the effect of cadmium concentration and N₂ laser irradiation on steady state, photosensitivity and transient photoconductivity of Cd_xSe_100?x (x=54, 34) thin films, which were prepared by thermal vacuum evaporation method. Photoconductivity measurements on the thin films are carried out at different levels of light intensities at room temperature. The current–voltage characteristic shows ohmic behavior of the films. The photosensitivity of the Cd_xSe_100?x thin films is found to decrease with increase of cadmium concentration in the system, whereas it increases after irradiation with N₂ laser. Apart from this, the photocurrent follows the I_ph∝F^γ law. Also, the differential lifetimes (τ_d) are found to increase with increase in the cadmium concentration in the Cd_xSe_100?x thin films and also with increase in the laser irradiation time.     

A comparative investigation of the oxidation of silicon using H2/O2, TCA/O2 and HCl/O2 mixtures

The oxidation of single-crystal silicon wafers has been investigated using an industrial thermal oxidation system. The growth characteristics and electrical properties of the oxides resulting from pure hydrogen/oxygen (H₂/O₂), trichloroethane/oxygen (TCA/O₂) and hydrogen chlorid/oxygen (HCl/O₂) mixtures have been investigated and compared. The addition of both HCl and TCA to oxygen produces higher growth rates and improved electrical characteristics. It is shown that the oxidation rate for TCA/O₂ is approximately 30%–40% higher than for HCl/O₂ and that comparable electrical properties can be readily obtained. A TCA/O₂ ratio of 1 mol% gives the optimum process for VLSI applications, though 3 mol% HCl/O₂ gives comparable results. It is suggested that the overall mechanisms governing the processes are similar. However, the TCA process is a safer and cleaner alternative because it generates HCl in situ in the oxidation chamber.     

自适应脑机接口研究综述

脑机接口(BCI)不依赖于外周神经和肌肉,在大脑与外部设备之间建立起直接交流的通路。近年来,该技术在识别准确率和系统交互速率方面已取得巨大突破。然而,脑电(EEG)信号非平稳特性较强且用户主观状态波动较大,传统脑机接口技术对大脑活动的动态变化欠缺适应性,影响了脑机接口系统的控制稳定性,也限制了其智能化发展和应用。自适应脑机接口可根据大脑当前状态动态调整诱发范式和实时更新识别模型,从而增强脑控系统对非平稳大脑活动的适应性,提高其控制精度和鲁棒性,实现更加实用化的脑控系统,对推动脑机接口技术进一步发展极具意义。该文对自适应脑机接口的相关研究进行了回顾和总结,并对该技术未来发展的方向进行了展望。     

Characterisation of JSR’s spin-on hardmask FF-02

Some of the spin-on interlayer dielectrics (ILD) with dielectric constant k below 2.3, targeted for the 65 nm node and below, are available with their spin-on hard masks (SoHM) to reduce the total effective capacitance and to provide high selectivity to their respective ILDs during integration. In this work, FF-02, JSR’s SoHM is characterised. Its thermal stability, chemical compatibility to stripping solutions and resistance to moisture are investigated. Methods to seal the surface of FF-02 to chemicals are explored. Electrical properties including the dielectric constant, leakage current and breakdown fields are evaluated in planar capacitors and in single damascene structures.     

Effect of annealing on the microstructure and bonding interface properties of Ag–2Pd alloy wire

This study investigated the mechanical and electrical properties of Ag–2Pd wire after thermal annealing. The thermal stability of the tested wire was examined by separately imposing static annealing at 275 °C, 325 °C and 375 °C in a vacuum environment. It was found that annealing the Ag–2Pd wire at 275 °C promoted the formation of a fully annealed structure with equiaxed grains. Annealing Ag–2Pd wire had a shorter heat affect zone (HAZ) length than those of conventional wire, and offered outstanding mechanical properties. A long-term electrical test found Ag₃(Pd)Al and Ag₂(Pd)Al compounds between the Ag–Pd ball and Al pad. These results confirmed the high-reliability properties of annealed Ag–2Pd wires for the wire bonding process.     

Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure

The electrical and dielectric properties of Al/SiO₂/p-Si (MOS) structures were studied in the frequency range 10 kHz-10 MHz and in the temperature range 295-400 K. The interfacial oxide layer thickness of 320 Å between metal and semiconductor was calculated from the measurement of the oxide capacitance in the strong accumulation region. The frequency and temperature dependence of dielectric constant (ε′), dielectric loss (ε″), dielectric loss tangent (tan δ) and the ac electrical conductivity (σ_ac) are studied for Al/SiO₂/p-Si (MOS) structure. The electrical and dielectric properties of MOS structure were calculated from C-V and G-V measurements. Experimental results show that the ε′ and ε″ are found to decrease with increasing frequency while σ_ac is increased, and ε′, ε″, tan δ and σ_ac increase with increasing temperature. The values of ε′, ε″ and tan δ at 100 kHz were found to be 2.76, 0.17 and 0.06, respectively. The interfacial polarization can be more easily occurred at low frequencies, and the number of interface state density between Si/SiO₂ interface, consequently, contributes to the improvement of dielectric properties of Al/SiO₂/p-Si (MOS) structure. Also, the effects of interface state density (N_ss) and series resistance (R_s) of the sample on C-V characteristics are investigated. It was found that both capacitance C and conductance G were quite sensitive to temperature and frequency at relatively high temperatures and low frequencies, and the N_ss and R_s decreased with increasing temperature. This is behavior attributed to the thermal restructuring and reordering of the interface. The C-V and G/ω-V characteristics confirmed that the N_ss, R_s and thickness of insulator layer (δ) are important parameters that strongly influence both the electrical and dielectric parameters and conductivity in MOS structures.     

Electrical and optical properties of ZnO/Si heterojunctions as a function of the Mg dopant content

Undoped and Mg-doped ZnO thin films prepared by a sol–gel process were deposited on p-Si and glass substrates via spin coating. The electrical and optical properties of the films were investigated. Atomic force microscopy images revealed that the ZnO films are formed from fibers consisting of nanoparticles. The electrical conductivity mechanism of the films was investigated. The I–V characteristics of Al/ZnO/p-Si samples showed rectification behavior with a rectification ratio that depended on the applied voltage and the Mg doping ratio. ZnO/p-Si heterojunction diodes exhibited non-ideal behavior with an ideality factor greater than unity that could be ascribed to the interfacial layer, interface states, and series resistance. The barrier height for undoped and Mg-doped ZnO/p-Si diodes was in the range 0.78–0.84 eV. The results demonstrate that the electrical properties of ZnO/p-Si heterojunction diodes are controlled by the Mg dopant content and suggest that the optical bandgap of these ZnO films can be tuned using the Mg level.     

Composites of Higher Manganese Silicides and Nanostructured Secondary Phases and Their Thermoelectric Properties

Composites of higher manganese silicides (HMS) and hydrothermally synthesized nanostructured Ag₂Te or PbTe powders were fabricated by mechanical mixing and hot-pressing. A reduction of the thermal conductivity and an increase of the Seebeck coefficient were obtained for the Ag₂Te/HMS composite, while the Seebeck coefficient of the PbTe/HMS composite was less influenced and its thermal conductivity decreased too. However, both composites showed a considerably reduced electrical conductivity, which degraded the figure of merit. The lattice contribution was found to be the main part of the thermal conductivity for all the samples. The present results indicate that introducing a secondary phase into a matrix material could be an effective way to reduce the thermal conductivity. On the other hand, a more detailed design of the microstructures and the distribution of the secondary phases is still needed with respect to the effect on the electrical properties.     

Effect of the fabrication method on the electrical properties of poly(acrylonitrile-co-butadiene-co-styrene)/carbon black composites

Poly(acrylonitrile-co-butadiene-co-styrene) (ABS), an engineering plastic, was combined with carbon black (CB) to increase its conductivity. The ABS/CB composites were prepared using two different methods: dissolution of ABS in Butan-2-one and manual mixing of the constituent materials. These fabrication methods led to different microstructures, which led to vastly different electrical properties. The microstructures were acquired using scanning electron microscopy (SEM) and optical microscopy, while the electrical conductivity was obtained using impedance spectroscopy. The percolation threshold of the composites fabricated using the manual mixing method was found to be much lower (0.0054 vol.% CB) than that of the composites fabricated using the dissolution method (2.7 vol.% CB).     

Synthesis and characterizations of poly(3,6-thienophenanthrene) and poly(2,7-thienophenanthrene) and their applications in polymer light-emitting devices and solar cells

Here we report the synthesis of two novel phenylene-based polymers-poly(3,6-thienophenanthrene) (PTP36) and poly(2,7-thienophenanthrene) (PTP27) via base-free Suzuki–Miyaura reaction. The structure and electroluminescent properties of the meta-linked PTP36 and para-linked PTP27 are fully characterized. The obtained polymers were found to be liquid-crystalline, with broad band gap of 2.72 eV and 2.49 eV, respectively, which are much smaller than those of corresponding polyphenanthrenes. On the basis of PTP36 and PTP27, copolymers of 2,7-thienophenanthrene and 3,6-thienophenanthrene with 5,6-bis(octyloxy)-4,7-di(thiophen-2-yl)benzothiadiazole (DBT), namely PTP36-DBT and PTP27-DBT were prepared and be investigated as a potential donor material for polymer solar cells. The preliminary data show that the maximal power conversion efficiencies (PCEs) of the PTP27-DBT- and PTP36-DBT-based polymer solar cells are 3.5% and 0.9%, respectively.     

Simple source/drain contact structure for solution-processed n-channel fullerene thin-film transistors

This paper describes a simple approach for reducing the contact resistances at the source/drain (S/D) contacts in solution-processed n-channel organic thin-film transistors (OTFTs). Blending poly(ethylene glycol) (PEG) into the fullerene semiconducting layer significantly improved the device performance. The PEG molecules in the blends underwent chemical reactions with the Al atoms of the electrodes, thereby forming a better organic-metal interface. Further, the rougher surface obtained after the addition of PEG could also increase the effective contact area, thereby reducing the resistance. As a result, the electrical properties of the devices were significantly improved. Unlike conventional bilayer structures, this approach allows the ready preparation of OTFTs with a low electron injection barrier at the S/D contacts.     

嵌入式平台下GUI工具的设计

开发了一套C语言实现的Windows风格用户界面的图形用户接口（GUI）工具,介绍了GUI系统的设计思想、原则及特点。系统已成功应用于一款有线数字电视接收机。     

Properties of fluorine-doped SnO2 thin films by a green sol–gel method

Fluorine doped tin oxide (FTO) films were fabricated on a glass substrate by a green sol–gel dip-coating process. Non-toxic SnF₂ was used as fluorine source to replace toxic HF or NH₄F. Effect of SnF₂ content, 0–10 mol%, on structure, electrical resistivity, and optical transmittance of the films were investigated using X-ray diffraction, Hall effect measurements, and UV–vis spectra. Structural analysis revealed that the films are polycrystalline with a tetragonal crystal structure. Grain size varies from 43 to 21 nm with increasing fluorine concentration, which in fact critically impacts resultant electrical and optical properties. The 500 °C-annealed FTO film containing 6 mol% SnF₂ shows the lowest electrical resistivity 7.0×10⁻⁴ Ω cm, carrier concentration 1.1×10²¹ cm⁻³, Hall mobility 8.1 cm²V⁻¹ s⁻¹, optical transmittance 90.1% and optical band-gap 3.91 eV. The 6 mol% SnF₂ added film has the highest figure of merit 2.43×10⁻² Ω⁻¹ which is four times higher than that of un-doped FTO films. Because of the promising electrical and optical properties, F-doped thin films prepared by this green process are well-suited for use in all aspects of transparent conducting oxide.     

氧化镍/膨胀石墨复合物的合成及其电容性能

采用液相沉淀法制备了膨胀石墨(EG)质量分数为40％的氧化镍/膨胀石墨(NiO/EG)复合物,研究了该复合物电化学性能.结果表明:纳米NiO均匀分散在EG表面;导电性良好的EG显著提高了NiO的电化学性能.在6 mol·L-1 KOH电解液中,NiO/EG复合物电极的氧化和还原峰的电位差降低了0.141 V,100 mA·g-1电流密度下比容量可达到370 F·g-1,远高于纯NiO(约206 F·g-1)和纯EG的比容量(约25 F·g-1).NiO/EG复合物在充放电500次后,比容量仅衰减了2.5％.