0.2 THz二倍频器研究

基于六阳极结反向串联型GaAs平面肖特基二极管,设计并实现了0.2 THz大功率二倍频器。肖特基二极管倒装焊接在50m石英电路上。采用电磁场和电路联合设计仿真获得了二倍频器的倍频效率。当入射功率在100 mW时,输出频率在190~225 GHz带内效率大于5%。在小功率（Pin100 mW）和大功率（Pin300 mW）注入条件下,测试了倍频电路的输出功率和倍频效率。在100 mW驱动功率下采用自偏压测试,最大输出功率为14.5 mW@193 GHz,对应倍频效率为14%;在300 mW驱动功率下采用自偏压测试,在188~195 GHz,输出功率大于10 mW,最大输出功率为35 mW@192.8 GHz,对应倍频效率为11%。     

全固态Cr:LiSAF/LBO腔内倍频蓝光激光器

本文报道了利用最大输出功率为650mW的全固态Nd:YVO4/LB0671nm红光激光器作为泵浦源,纵向泵浦Cr:LiSAF,利用LBO腔内倍频,获得430nm的连续蓝光输出的实验研究,并解释了当泵浦功率继续增大时,输出功率下降的原因。在泵浦功率为560mW时,获得了最大输出功率为9mW的430nm蓝光输出,激光的阈值为230mW。     

A frequency doubler for 200 GHz with a planar Schottky varactor

A frequency doubler for 200 GHz utilising a planar surface channel Schottky varactor was designed, constructed and tested. The doubler employes novel split-waveguide mount design with two sliding backshorts at both input and output waveguides. The theoretical maximum efficiency of the doubler is 44.0 % with input power level of 32 mW and the maximum output power is 16.5 mW with input power level of 50 mW. The measured maximum efficiency of the doubler was 7.1 % and the maximum output power was 2.6 mW     

高功率密度自对准结构AlGaAs/GaAs 异质结双极晶体管

利用各向异性的湿法刻蚀和侧墙隔离技术实现了发射极金属和基极金属的自对准,采用该自对准技术成功地研制出了自对准结构的AlGaAs/GaAs异质结双极晶体管,器件直流电流增益大于20,电流增益截止频率fT大于30GHz,最高振荡频率fmax大于50GHz,连续波功率测量表明：在1dB增益压缩时,单指HBT可以提供100mW输出功率,对应的功率密度为6.67W/mm,功率饱和时最大输出功率112mW,对应功率密度为7.48W/mm,功率附加效率为67%．     

High-Output, Single- and Dual-Diode, Millimeter-Wave Frequency Doublers

A balanced, dual-diode varactor frequency doubler for 85-116 GHz is described and its performance compared to that of a single-diode device. The balanced doubler can provide a minimum of 18 mW between 85 and 116 GHz for 190-mW maximum safe input power, while the single-diode doubler using the same diode-type exhibits a minimum output power of 10 mW over the same frequency range for a maximum safe input power of 90 mW. An improved single-diode design using a higher break-down voltage diode has achieved a minimum output power of 18 mW between 97 and 116 GHz for a maximum safe input power of 150 mW. These devices have been used in cascade with a frequency tripler to implement a 6X multiplier chain to 310-350 GHz with a minimum output power in this submillimeter band of 0.6 mW.     

新型准光学瓦级固态功率合成器

本文介绍一种新型短焦距开放腔固态功率合成器的实验结构和实验结果。由4只标称功率为155mW,160mW,160mW和165mW的Gunn二极管,采用串联型接法进行的合成实验,在X波段获得了开机输出功率大于1W,稳定输出功率为850mW。     

A high-power tapered and cascaded active multimode interferometer semiconductor laser diode

A high power semiconductor laser diode with a tapered and cascaded active multimode interferometer (MMI) cavity was designed and demonstrated.An output power as high as 32 mW was obtained for the novel laser diode with a tapered and cascaded active MMI cavity,being much higher than the 9.8 mW output power of the conventional single ridge F-P laser with the same material structure and the same device length due to the larger active area;and also being higher than the 21.2 mW output power of the rectangular and cascaded active MMI laser diode with nearly the same structure,except for the shape of the MMI area.In addition,the tapered and cascaded active multimode interferometer laser showed stable single mode outputs up to the maximum output power.     

高功率密度自对准结构AlGaAs/GaAs异质结双极晶体管

利用各向异性的湿法刻蚀和侧墙隔离技术实现了发射极金属和基极金属的自对准 ,采用该自对准技术成功地研制出了自对准结构的 Al Ga As/ Ga As异质结双极晶体管 ,器件直流电流增益大于 2 0 ,电流增益截止频率 f T 大于30 GHz,最高振荡频率 fmax大于 5 0 GHz,连续波功率测量表明 :在 1d B增益压缩时 ,单指 HBT可以提供 10 0 m W输出功率 ,对应的功率密度为 6 .6 7W/ m m,功率饱和时最大输出功率 112 m W,对应功率密度为 7.48W/ m m,功率附加效率为 6 7%     

High output power single longitudinal mode graded index separateconfinement multiple quantum well InGaAs/InP distributed feedback (GRINSCH MQW DFB) lasers

A high continuous-wave (CW) output and high quantum efficiency of 1.5 μm-wavelength InGaAs/InP graded-index separate-confinement multiple-quantum-well DFB lasers were demonstrated. A threshold current of 45 mA with a maximum output power close to 100 mW and a quantum efficiency of 0.33 mW/mA was obtained. Single-frequency light output with power as high as 16 dBm (40 mW) was launched into a single-mode fiber     

Visible laser sources based on frequency doubling in nonlinearwaveguides

This paper reviews nonlinear quasi-phase-matching (QPM) waveguides and laser diodes with application to conversion of infrared laser diode wavelengths to the visible. The discussion of nonlinear QPM waveguides includes Ti-diffusion poled and E-field poled LiNbO₃ and KTP waveguides. Up to 25 mW of blue output power has been demonstrated for 120-mW infrared power injected into a nonlinear waveguide. Semiconductor laser sources suitable for frequency doubling are discussed, including distributed Bragg reflection (DBR) lasers operating at up to 200 mW output power, master oscillator power amplifiers with over 1 W output power, and wavelength-tunable flared semiconductor lasers with over 0.5 W output. A compact blue laser with 1-4 mW output power at 425-nm wavelength has been demonstrated based on a DBR laser frequency doubled in a nonlinear waveguide     

Lithium neodymium tetraphosphate lasers pumped via close-couplingto high-power laser diode arrays

With a pump power of approximately 250 mW, a TEM₀₀, multilongitudinal mode output power of 73 mW has been obtained from an external mirror device operating simultaneously on the two lines at 1047 and 1055 nm. Devices operating at 1317 nm have also been studied and a close-coupled, monolithic laser with an output power in excess of 28 mW has been demonstrated     

Optimization of a 250-GHz Schottky tripler using novel fabricationand design techniques

A technique for optimizing a diode waveguide mount for millimeter- and submillimeter-wave applications has been developed. The structure consists of a planar rectangular radiator for which an accurate derivation of impedance is available. The planar radiating probe incorporates the diode contacting tip, is fabricated integrally with the microstrip filter, and is used in a 230-290-GHz frequency tripler. Modification of the tripler using the described technique resulted in an improvement of ≈6 dB in available output power, compared to the authors' previous results for this device. Device output power exceeds 8.5 mW at 245 GHz for an input power of 132 mW. The best flange-to-flange efficiency (in excess of 11%) was achieved at 3.3-mW output power. This technique was then applied to a waveguide mount, incorporating two diodes contacted in parallel, so that greater input power could be handled. This resulted in a tripler with a maximum output power of 15 mW at 270 GHz for an input of 280 mW     

2cm波段耿管电调振荡器

报道了采用部分集成方案研制的Ｋｕ波段变容管调谐耿管振荡器（ＶＣＯ）及两管功率合成器。研制的两只中心频率为１６和１７ＧＨＺ的电调振荡器，其中１６ＧＨＺ的电调带宽大于６４０ＭＨｚ，输出功率大于１１０ｍＷ，功率起伏小于０．６ｄＢ；而１７ＧＨｚ的电调带宽大于２３０ＭＨｚ，输出功率大于１１０ｍＷ，功率起伏小于０．９ｄＢ。两管功率合成器的振荡频率为１７．３ＧＨｚ，输出功率达２５０ｍＷ．     

High-power output over 200 mW of 1.3 µm GaInAsP VIPS lasers

Maximum CW output power was investigated in GaInAsP 1.3μm V-grooved inner stripe on P-substrate (VIPS) lasers considering both cavity length and facet reflectivity. Long-cavity lasers show a strong dependence of maximum output power on front reflectivity. A CW light output over 200 mW was obtained at room temperature using a 700 μm long cavity laser with 5 and 98 percent reflectivity of the front and rear facets, respectively. The fundamental transverse mode operation was confirmed up to 170 mW. A coupled power over 110 mW into a single-mode fiber was achieved with a coupling efficiency of 58 percent. We have verified the high reliability under high power levels, as high as 75 percent of the maximum CW output powers at room temperature.     

基于光纤光栅法布里-珀罗腔的高效窄线宽光纤激光器

报道了采用双光纤光栅(FBG)法布里-珀罗(F-P)腔选模的线形腔结构窄线宽光纤激光器。激光器以高掺杂Er~(3 )光纤为增益介质,利用全光纤型法拉第旋转器(FR)抑制空间烧孔效应,通过两个短光纤光栅法布里-珀罗腔选模,产生了稳定的1534．83 nm单频激光输出。激光器采用两支976 nm单模激光二极管(LD)抽运,两端输出。激光器阈值抽运光功率为12 mW,在总抽运光功率为145 mW时总输出信号光功率为39．5 mW,单端最高输出信号光功率为22 mW。光-光转换效率为27％,斜率效率为29．7％。随着抽运功率的增加,激光器输出功率趋于饱和。采用延迟自外差方法精确测量光纤激光器线宽,实验中使用了15 km单模光纤延迟线,由于测量精度的限制,得到激光器的线宽小于7kHz。这种光纤激光器具有输出功率高、线宽窄、信噪比高的特点,可用于高精度的光纤传感系统。     

High efficient and narrow linewidth fiber laser based on fiber grating Fabry-Perot cavity

A high Er3+-doped narrow linewidth fiber laser based on fiber Bragg grating Fabry-Perot cavity was demonstrated. The spatial hole burning effect was restrained by a fiber Faraday rotator. Two short fiber Bragg grating Fabry-Perot cavities as narrow bandwidth filters discriminated and selected laser longitudinal modes efficiently. A stable single-frequency 1534.83 nm laser was acquired. Pumped by two 976 nm laser diodes and two-ended output, the fiber laser exhibited a 12 mW threshold. Total 39.5 mW output power and one end 22 mW output power were obtained at the maximum 145 mW pump power. Optical-optical efficiency was 27% and slope efficiency was 29.7%. The output power seemed to be saturated when pump power increased. The 3 dB linewidth of the laser was less than 7.5 kHz, measured by the delayed self-heterodyne method with 15 km monomode fiber. The high power narrow linewidth fiber laser can be used in high resolution fiber sensor systems.     

一种提高垂直腔面发射激光器性能的新工艺

采用一种新的工艺方法提高了垂直腔面发射激光器的输出功率.采用开环分布孔代替环形沟槽,使器件的输出功率提高了0.34倍.14μm孔径的器件输出功率超过10mW,工作电流为29.6mA时,最大输出功率达到12.48mW.而且,这些开环分布孔为电注入提供了便捷的桥通道,很好地解决了电极易过沟断线问题.器件表现了良好的高温工作特性,当温度高达60℃时输出功率仍可达到8mW.     

0.2THz宽带非平衡式倍频电路研究

基于四阳极结反向串联型GaAs平面肖特基二极管,设计并实现了0.2 THz宽带非平衡式二次倍频电路。肖特基二极管倒装焊接在75 m石英电路上。在小功率和大功率注入条件下,测试了倍频电路的输出功率和倍频效率。输入功率在10~15 mW时,通过加载正向偏置电压,在210~224 GHz,倍频效率大于3%,在212 GHz处有最高点倍频效率为7.8%。输入功率在48~88 mW时,在自偏压条件下,210~224 GHz带内倍频效率大于3.6%,在214 GHz处测得最大倍频效率为5.7%。固定输出频率为212 GHz,在132 mW功率注入时,自偏压输出功率最大为5.7 mW,加载反向偏置电压为-0.8 V时,输出功率为7.5 mW。     

Hybrid Integrated Triplers Frequency Doublers and to 300 and 450 GHz

High-power wide-band submillimeter-wave frequency sources have been developed. A frequency doubler to 300 GHz has delivered an output power of 5 mW with 3-dB-down bandwidth of more than 10 GHz. A frequency tripler to 450 GHz with an output power of 0.5 mW has also been tested. These multiplier output powers are highest values in the respective frequency regions up to date. The successful performances have been achieved by use of GaAs Schottky-barrier diodes and hybrid integrated circuits which are specially designed to obtain high output power.     

980nm InGaAs应变量子阱激光器及组合件

利用分子束外延技术研制出了高质量InGsAs/GaAs应变量子阱材料及量子阱激光器.脊形波导窄条形量子阱激光器的阈值电流和微分量子效率分别为15mA和0.8 W/A,线性输出功率大于150mW,基横模输出功率可达100mW.InGaAs应变量子阱激光器和单模光纤进行了耦合,其组合件出纤光功率典型值为40mW,最大值可达60mW.显示出了高的基横模输出功率和高的耦合效率.其组合件在40～60mW下,中心发射波长在977nm.满足了对掺铒光纤高效率泵浦的波长要求,成功地研制出适于掺铒光纤放大器用的应变量子阱激光器.