共查询到20条相似文献,搜索用时 93 毫秒
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基于可降解材料的瞬态电子器件,在完成指定功能或废弃后,受预定触发因素刺激,可实现短时间内部分退化或全部降解.凭借先进加工工艺和特殊的功能材料,瞬态电子器件在性能方面可与传统电子器件相媲美,并在功能上形成补充,将应用范围扩展到绿色电子、信息安全存储、植入式医疗和环境监测传感器等前沿领域.文章综合分析了瞬态电子的概念、组成、制造技术、降解机理以及重要瞬态器件,从信息安全存储、战场侦察监视、士兵伤情防治、物资精确投送4个方面,阐述了瞬态电子技术在军事方面的应用.总结了瞬态电子技术发展存在的问题,展望了其未来研究的发展趋势. 相似文献
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异质谷间转移电子器件的Monte Carlo模拟研究 总被引:1,自引:0,他引:1
使用量子阱能带混合隧穿共振理论和MonteCarlo模拟计算研究了异质谷间转移电子器件中的双能谷电子注入、两种谷间转移电子的相互作用、有源层电场分布及异质结电压的触发功能.首次发现了GaAs器件中的三能谷谷间电子转移.算得的二极管伏安特性和实验测量结果相吻合.用所得的电场结构图和三能谷电子分布图证明强场畴能直接在阴极端触发,消除了耿氏有源层中的死区.由此说明了器件振荡频率下降和振荡效率升高的特性. 相似文献
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在比较三代电子器件的基础上,说明纳电子器件是电子器件发展的新一代,它的主要特征是单电子行为和显著的量子效应.与真空电子器件、微电子器件相比,纳电子器件在信号加工中的主要特性有:(1)单电子,(2)保有相位,(3)量子电阻(h/e2),(4)量子字节(qubit),(5)普适电导涨落.电子器件的基本元件是具有信号放大能力的三极管,目前纳电子三极管有两种模式:纳米点三极管和碳纳米管三极管.文中重点讨论了构造纳电子三极管中的碳纳米材料的结构和特性. 相似文献
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在比较三代电子器件的基础上,说明纳电子器件是电子器件发展的新一代,它的主要特征是单电子行为和显著的量子效应.与真空电子器件、微电子器件相比,纳电子器件在信号加工中的主要特性有:(1)单电子,(2)保有相位,(3)量子电阻(h/e2),(4)量子字节(qubit),(5)普适电导涨落.电子器件的基本元件是具有信号放大能力的三极管,目前纳电子三极管有两种模式:纳米点三极管和碳纳米管三极管.文中重点讨论了构造纳电子三极管中的碳纳米材料的结构和特性. 相似文献
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在纳电子器件运输工程中,需要将纳电子器件的少电子输运性质进行有效的分析,以此充分发挥出纳电子器件的少电子所蕴藏的巨大作用。另外,也要加强纳电子器件少电子的应用,促进我国纳电子器件的发展。 相似文献
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无论氢在电子器件内部以何种形式(H2分子、H原子或H+离子)存在,均会对电子器件电离损伤产生作用,进而影响器件的抗辐照能力。本文深入研究了氢气和空气气氛条件下1 MeV电子辐照栅控横向PNP(GLPNP)型双极晶体管的辐射损伤缺陷演化行为。利用Keithley 4200SCS半导体参数测试仪对不同气氛下辐照过程中晶体管进行在线原位电性能参数测试,研究晶体管电性能退化与电子辐照注量和氢气深度之间的关系;基于栅扫技术(GS)和深能级瞬态谱技术(DLTS),研究双极晶体管中氢诱导电离损伤缺陷演化的基本特征。研究表明,与空气气氛相比,氢气气氛下电子辐照导致GLPNP的基极电流增加显著,而集电极电流明显降低,产生更多的氧化物电荷和界面态,这些现象均说明氢气加剧双极晶体管的电离辐射损伤。 相似文献
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A novel SCR structure for on-chip ESD protection implemented with a deep submicron triple well CMOS technology is presented. The triple well technology offers the possibility of biasing the p-well, on which the structure is built, under transient ESD stress conditions and independently from the substrate. This greatly affects the turn on mechanism of the structure. Unlike conventional SCR devices, the proposed p-well coupled SCR offers a reduced triggering voltage level as well as the enhanced ESD performance of the SCR devices. The turn on of this structure is realized with a common RC trigger network. The concept is supported by device simulation results 相似文献
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D. Pogany S. Bychikhin M. Heer W. Mamanee E. Gornik 《Microelectronics Reliability》2011,51(9-11):1592-1596
Transient Interferometric Mapping (TIM) tools are reviewed from a perspective of their particular application area and comparison to other transient optical analysis techniques. TIM studies on trigger behavior, current filamentation and failure modes in BCD DMOS and ESD protection devices under TLP and system-level-ESD – like pulses are overviewed. TIM analysis of CMOS ESD protection devices, in particular study of on-state spreading effect in 90 nm SCRs is also presented. Furthermore TIM investigations of substrate currents and parasitic SCR paths during transient latch-up events in 90 nm CMOS and BCD technology test structures and products are reviewed. Finally TIM studies of ESD and short-time self-heating phenomena in GaN HEMTs and lasers are also briefly mentioned. 相似文献
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Common ESD protection devices have a snapback characteristic similar to a silicon-control rectifier. The transient voltage required to trigger these devices usually is not an important design criterion as long as it is not too high. In this work, it is demonstrated that the defect generation mechanism in oxide during electrical stress remains unchanged in the sub-nanosecond stress regime. As a result, the voltage transient can create far more defects in the gate oxide than the main ESD event clamped at the holding voltage. Due to difficulty in measurement, this oxide reliability degradation can lead to chip failure but not show up in simulated ESD test. 相似文献
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由于硅材料本身的限制,传统硅电力电子器件性能已经接近其极限,碳化硅(SiC)器件的高功率、高效率、耐高温、抗辐照等优势逐渐突显,成为电力电子器件一个新的发展方向.综述了SiC材料、SiC电力电子器件、SiC模块及关键工艺的研究现状,重点从材料、器件结构、制备工艺等方面阐述了SiC二极管、金属氧化物半导体场效应晶体管(MOSFET)、结晶型场效应晶体管(JFET)、双极结型晶体管(BJT)、绝缘栅双极晶体管(IGBT)及模块的研究进展.概述了SiC材料、SiC电力电子器件及模块的商品化情况,最后对SiC材料及器件的发展趋势进行了展望. 相似文献
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Mete Batuhan Durukan Melih Ogeday Cicek Doga Doganay Mustafa Caner Gorur Simge nar Husnu Emrah Unalan 《Advanced functional materials》2022,32(1):2106066
Electronic waste (e-waste) grows in parallel with the increasing need for consumer electronics. This, unfortunately, is leading to pollution and massive ecological problems worldwide. A solution to this problem is the use of transient electronics. While transiency of a few components such as transistors and batteries have been proposed already, it is crucial to have all components in electronic devices to be transient. Therefore, the transiency of more electronic components should be demonstrated to alleviate the e-waste problem. Herein, multifunctional nanocomposite electrodes are fabricated using poly(vinyl alcohol), carbon black, and activated carbon. These simple electrodes are then used to fabricate physically transient supercapacitors, triboelectric nanogenerators, and capacitive sensors. Transient supercapacitors are used numerous times with excellent supercapacitive behavior before being discarded, which show promise as an energy storage component for transient systems. The fabricated transient triboelectric nanogenerators are used to harvest mechanical energy, eliminated the need for an external power supply, paving the way to self-powered devices, such as a touchpad as demonstrated herein. The fabricated transient capacitive sensors, on the other hand, have shown long linear sensitivities and offered waste-free monitoring of physiological signals and body motions. 相似文献
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Thomas Benoist Claire Fenouillet-Beranger Pierre Perreau Christel Buj Philippe GalyDavid Marin-Cudraz Olivier FaynotSorin Cristoloveanu Pierre Gentil 《Microelectronic Engineering》2011,88(7):1276-1279
In this article, the impact in FDSOI technology, of ground plane and buried oxide (BOX) size on the robustness and on the NMOS triggering voltage (Vt1) is shown. We show experimentally that firstly thin BOX devices are more robust than thick BOX devices and secondly with a higher Vt1, thin BOX device purposes a larger range to trigger ESD network and to optimize design. 相似文献
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ISP技术在《数字电路》课程设计中的应用 总被引:2,自引:0,他引:2
ISP技术是国内外最先进的设计最新一代数字系统的有力工具与器件之一,ISP器件也正被越来越多的电子技术设计人员所应用。介绍了ISP技术的功能和特点,并运用ISP技术灵活方便的特点在数字电路课程设计中设计了电子钟这个具体实例。通过这个实例的分析,丰富了实验教学手段,培养了学生实验操作能力。 相似文献