适用于轻载高效BUCK转换器的自举电路设计

提出了一种高压Buck转换器自举供电电路。该电路直接由芯片外部电源对自举电容充电,具有快速响应和大驱动电流等特点,满足大尺寸N型功率开关管的驱动要求。本设计适用于具有轻载高效模式的高压Buck转换器,在高端和低端开关管不工作时,能较好地对自举电容充电,解决了传统自举电路在低端管不工作时,无法稳定调节自举电压的问题。采用0.25 μm UMC工艺库仿真,结果显示,只需满足输入电压要求,即使低端开关管不工作,且负载具有较高电压时,该电路也能将自举电压维持在3.6 V以上,提高了转换器的可靠性。     

可提高双晶体管正激DC-DC电路效率的同步整流器控制芯片

一个DC-DC变换器，如果其初级侧采用双晶体管正激拓扑，那么该变换器虽可接受高的输入电压，但却缺乏驱动闪级侧电路的动态复位电路。要解决这个问题，可以使用一种自举型控制芯片来扩展和优化次级侧的栅极驱动能力，并由此获得高的转换效率。     

高强度气体放电灯（HID）电子镇流器控制IC

IRS2573DS 600 VIC结合了高侧、双模式降压控制器和全桥驱动器。该器件新颖的降压电路能够在灯预热过程中实现连续导通模式控制,以及稳态运行下的临界导通模式。有关的全桥驱动器包含了所有高侧和低侧栅极驱动器输出,以及高侧电源电压的集成式自举MOSFET。     

自举式IR2110驱动集成电路在SRD系统中的应用

IR2110是具有两个输出的桥臂MOSFET栅极驱动器集成电路.由于IR2110具有快速完整的保护功能,因而可提高控制系统的可靠性,缩小控制板的尺寸.文中介绍了自举式IR2110集成驱动芯片的驱动原理和应用特点,给出了自举电容的选择和计算方法;同时给出了该集成驱动芯片在开关磁阻电机驱动系统中的应用实例,最后指出了电路调试中需要注意的几点问题.     

一种新型高线性度采样开关的设计

设计了一种应用于流水线ADC中的新型高线性度采样开关,该开关采用比较器、反相器链、CMOS对管开关,自举电容等实现,具有较高的线性度。其基本原理为：使MOS管栅极电压实时跟随输入电压,保证其差值恒定,从而实现整体采样保持电路较高的无杂散动态范围。通过Flip-around型采样保持电路进行验证,其无杂散动态范围可达91...     

电荷泵高端浮动自举式H桥功率驱动电路

提出了一种可以实现极低频甚至是０Ｈｚ下的高压Ｈ桥驱动电路的电荷泵高端浮动自举电路。通过理论分析、仿真和实验。主宰了在保证驱动器的开关速度不变的情况下,该电路能提供稳定物高端浮动电源。同时,对Ｈ桥功率驱动电路中高端浮动自举电路的设计方法也进行了探讨。     

一种用于无刷直流电机控制系统的MOSFET栅极驱动电路

介绍了一种用于无刷直流电动机控制系统的MOSFET栅极驱动电路,该电路完全利用分立元件.具有结构简单、安全可靠和实用性强等特点,该电路采用自举法驱动高压侧开关MOSFET,设置了死区时间以避免桥臂导通.并利用缓冲电阻减小振荡,通过设置合适的门极驱动电压减少了损耗,使电路效率得到了提高.     

半桥MOSFET驱动器

AAT4910采用一个逻辑输入同时驱动高／低边N沟道MOSFET。当逻辑输入驱动为高时,高侧外部MOSFET开启;当逻辑输入为低时,低侧MOSFET开启。当采用5V电源轨供电时,该器件的电路可通过高达28V的电源输入驱动高侧N沟道MOSFET。当驱动降低,启动输入随之将驱动器关闭,将运行电流降低至1μA以下。快速开关频率有助于将外部元件的成本和尺寸最小化。     

互感器传输设定脉宽的驱动电路设计分析(中)

根据文章（上）工作状态分析和IGBT栅极驱动特性的要求,文中对160个IGBT串联开关调制器的驱动电路进行了深入的论述、分析。全面系统地介绍了设定脉宽的电流互感器型驱动器的工程设计方法,给出了实用电路参数的计算公式,提出在密勒电容C_m影响下驱动器工作状态的设计原则,归纳出驱动电压U_GE前沿τ_r分段设计的2种计算方法。最后介绍了2种双极性脉冲驱动器的实用电路、RC加速网络的参数设计方法。     

高功率纳秒级激光二极管高侧驱动电路

纳秒级高功率的激光发射系统对激光雷达的探测性能产生重要影响。本文对普遍使用的激光二极管低侧栅极驱动电路进行修改得到高侧栅极驱动方式,使之能够适用于共阴极激光发射电路。该高侧驱动方式采用了一个半桥驱动器,两个GaN FET作为核心器件来控制激光二极管的发光。文中分析了该拓扑结构中电压、电容、电阻、电感等因素对流经激光器电流波形的影响。经过实验测试,在高重复频率下该电路能够产生3.1 ns脉冲宽度,约65 W的峰值功率,能够作为激光雷达的发射模块对场景进行扫描成像。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks