Synthesis and luminescence properties of Eu3＋, Sm3＋ doped （YxGd1-x）2O3： Si4＋, Mg2＋ long-lasting phosphor

A novel red long-lasting phosphor,(Y1-xGdx)2O3:Eu3+,Sm3+,Si4+,Mg2+,was synthesized by the co-precipitation method using oxalate precipitation as the precursor.X-ray diffraction(XRD),scanning electronic microscopy(SEM),integrated thermal analyzer(TG),and photoluminescence spectra(PL) as well as the ST-900PM weak light photometer were used to study the synthesis conditions,morphology,luminescence properties,and the decay time of the phosphor.The XRD results show that the products synthesized at 1400°C for 4 h...     

Structural and Dielectric Properties of Ba5RNiNb9O30 （R = La, Nd and Sm） ceramics

1 IntroductionSince the discovery of ferroelectricity and relatedproperties in BaTiO3,a large amount of research work onoxidesin search of novel materials for industrial applica-tions ,has been done .High performance dielectric ceram-ics are applied as key materials for resonators , discreteand multiplayer (MLC) capacitors ,andtemperature com-pensating capacitors . Some ferroelectric oxides are alsovery important due to the rapid progress in microwavetelecommunications ,satellite broadcastin…     

Dielectric Properties of Ag（Nb1-xTax）O3 and Bi2O3 Doped Ag（Nb1-xTax）O3 Ceramics

Dielectric properties of Ag（Nb1-xTa）O3 and Bi2O3 doped Ag（Nb1-xTax）O3 solid solutions were investigated. The results show that with the increase of Ta content （x）, the sintering temperature increased, and the dielectric loss （tanδ） and the temperature coefficient （αc） decreased. Ag（Nb1-xa）O3 （x=0.4） ceramics sintered at 1 100℃ had the highest permittivity （516.8） and a lower tanδ （0.0021） at 1 MHz, and its temperature coefficient was about 191 ppm/℃. The sintering temperature of Ag（Nb1-xTa）O3 （x=0.4） was lowered by the addition of Bi2O3, and its dielectric properties were improved. Ag（Nb0.6Ta0.4）O3 ceramics with 2.5 wt% Bi203 addition presented the optimum dielectric properties （ε=566, tanδ= 0.0007 and αc≈0ppm/℃） （1 MHz）,     

Effects of various fillers on sintering,microstructures and properties of Ca-Ba-Al-B-Si-O glass/ceramic composites简

Low-temperature sintering and properties of LTCC （low temperature co-fired ceramics） materials based on CaO-BaO-Al2O3-B2O3-SiO2 glass and various fillers such as Al2O3, silica glass, christobalite, AlN, ZrO2, MgO-SiO2, TiO2 were investigated. The results show that densification, crystallization, microstructures and dielectric properties of the composites are found to strongly depend on the type of filler. The densification process of glass/ceramic composites with various fillers is mainly from 600 ℃ to 925 ℃, and the initial compacting temperature of samples is 600 ℃. The initial rapid densification of samples starts at its glass softening temperature. LTCC compositions containing Al2O3, silica glass, AlN and MgO-SiO2 fillers start to have the crystallization peaks at 890, 903, 869 and 844 ℃, respectively. The crystallization peaks are believed as correlated to the crystallization of CaAl2SiO8, β-SiO2, Ca2Al2SiO7 and β-SiO2. The composite ceramic with Al2O3, silica glass and TiO2 ceramic have a better dense structure and better smooth fracture surface. Sample for Al2O3 has the lowest dielectric loss tanδ value of 0.00091, whereas the sample for MgO.SiO, has the highest dielectric loss tanδ value of 0.02576. The sample for TiO2 has the highest dielectric constant value of 14.46, whereas the sample for AIN has the lowest dielectric constant value of 4.61.     

Microstructure and electrical properties of La2O3-doped ZnO-based varistor thin films by sol-gel process简

Microstructure and electrical properties of La2O3-doped ZnO-Bi2O3 thin films prepared by sol-gel process have been investigated. X-ray diffraction shows that most diffraction peaks of ZnO are equal, and the crystals of ZnO grow well. Scanning electron microscopy and atomic force microscopy results indicate that the samples have a good structure and lower surface roughness. The nonlinear V-I characteristics of the films show that La2O3 develops the electrical properties largely and the best doped content is 0.3% lanthanum ion, with the leakage current of 0.25 mA, the threshold field of 150 V/mm and the nonlinear coefficient of 4.0 in detail.     

Microstructure, crystalline phase and electrical properties of Li0.06（Na0.5K0.5）0.94Nb（1-2x/5）MgxO3 lead-free piezoelectric ceramics

MgO-modified Li0.06(Na0.5K0.5)0.94NbO3(L6NKN) lead-free piezoelectric ceramics were synthesized by normal sintering at a relatively low temperature of 1000°C.The crystalline phase,microstructure,and electrical properties of the ceramics were investigated with a special emphasis on the influence of MgO content.The addition of MgO effectively improves the sinterability of the L6NKN ceramics.X-ray diffraction analysis indicates that the morphotropic phase boundary(MPB) separating orthorhombic and tetragonal ph...     

The Effect of Bi2O3 on the Structure and Microwave Dielectric Properties of Ba6-3xNd8＋2xTi18O54 System（x=2/3）

The structures and dielectric properties of Ba6-3xNd8＋2xTi18O54 system（x=2/3） doped with different contents of Bi2O3, whose final molecular formula is Ba6-3x（Nd1-yBiy）8＋2xTi18O54 were investigated. It is indicated that the dielectric constant increases greatly whereas Q value（f0=4 GHz） decreases with the increase of Bi2O3 content. However, the temperature coefficient could be controlled below 0±30×10^-6/℃ in the experiment. These phenomena are related to the appearance of a new phase, Bi4Ti3O12, which has high dielectric constant. Also, that Bi^3＋（0.13 nm） substitutes for Nd^3＋（0.099 5 nm） will increase the unit cell volume, which will lead to the enlargement of the octahedron B site occupied by Ti^4＋. So the spontaneous polarization of Ti^4＋ ions will be strengthened. Besides, Bi^3＋ will fill up some vacancies which Ba^2＋ or Nd^3＋ ions leave in two A1 sites and four A2 sites. More positive ions polarize, which also contributes to higher dielectric constant. The samples got with the optimium properties are sintered at 1 200 ℃ for 4 h, when y=0.25, ε≈110, Q≈5 400（f0=4 GHz）, TCC=-4.7×10^-6/℃; When y=0.3, ε≈120, Q≈5 000（f0=4 GHz）, TCC=-24×10^-6/℃.     

Effect of Li content on the microstructure and properties of lead-free piezoelectric （K0.5Na0.5）1-xLixNbO3 ceramics prepared by SPS

Lead-free piezoelectric （K0.5sNa0.5）1-xLixNbO3 （x = 0at%-20at%） ceramics were synthesized by spark plasma sintering （SPS） at low temperature and the effects of LiNbO3 addition on its crystal structure and properties were also studied. When the Li content was less than 6at%, a single proveskite phase with the similar structure of （K0.5Na0.5）NbO3 was formed; and a secondary phase with K3Li2Nb5O15 structure was observed in the 6at% 〈 x 〈 20at% compositional range. Furthermore, LiNbO3 existed as the third phase when the Li content was higher than 8at%. The grain sizes increased from 200-500 nm to 5-8 μm when the K3Li2Nb5O15 and LiNbO3 like phases were formed. With increasing Li content, the relative density of the ceramics first decreased from 97% to 93% and then kept constant. The piezoelectric coefficient d33, dielectric constant, and planner electromechanical coupling factor exhibited a decreasing tendency with increasing Li content because of the decrease in density and the formation of the secondary phase such as K3Li2Nb5O15 and LiNbO3. The formation of dense microstructure with a single phase is necessary in improving the properties of the （K0.5Na0.5）1-xLixNbO3 ceramics.     

Effects of Eu2O3 doping on microstructural and electronic properties of ZnO-Bi2O3-based varistor ceramics prepared by high-energy ball milling0推荐

ZnO-Bi2O3-based varistor ceramics doped with EU2O3 in a range from 0 to 0.4% were obtained by high-energy ball milling and fired at 900-1000 ℃ for 2 h. XRD and SEM were applied to determine the phases and microstructure of the varistor ceramics. A DC parameter instrument was applied to investigate the electronic properties and V-I characteristics. The XRD analysis of Eu2O3-doped ZnO-Bi2O3-based varistor ceramics shows that the ZnO, Eu-containing Bi-rich, Zn7Sb2O12-type spinel and Zn2Bi3Sb3O14-type which is the pyrochlore phase are present. With increasing Eu2O3 content, the average size of ZnO grain firstly decreases and then increases. The grain boundary defect model was particularly used to explain the excellent nonlinearity of ZnO-Bi2O3-based varistor ceramics with the addition of0.1% Eu2O3 and sintered at 950 ℃.     

Microstructure and microwave dielectric properties of lead borosilicate glass ceramics with Al2O3

The effects of Al₂O₃ addition on both the sintering behavior and microwave dielectric properties of PbO-B₂O₃-SiO₂ glass ceramics were investigated by Fourier transform infrared spectroscope (FTIR), differential thermal analysis (DTA), X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results show that with the increase of Al₂O₃ content the bands assigned to [SiO₄] nearly disappear. Aluminum replaces silicon in the glass network, which is helpful for the formation of boron-oxygen rings. The increase of the transition temperature T _g and softening temperature T _f of PbO-B₂O₃-SiO₂ glass ceramics leads to the increase of liquid phase precipitation temperature and promotes the structure stability in the glasses, and consequently contributes to the decreasing trend of crystallization. Densification and dielectric constants increase with the increase of Al₂O₃ content, but the dielectric loss is worsened. By contrast, the 3% (mass fraction) Al₂O₃-doped glass ceramics sintered at 725 °C have better properties of density ρ=2.72 g/cm³, dielectric constant ɛ _r =6.78, dielectric loss tan δ=2.6×10⁻³ (measured at 9.8 GHz), which suggest that the glass ceramics can be applied in multilayer microwave devices requiring low sintering temperatures.     

Microstructure and microwave dielectric properties of CaO-B2O3-SiO2 glass ceramics with various B2O3 contents

The effects of B2O3 addition on both the sintering behavior and microwave dielectric properties of CaO-B2O3-SiO2 (CBS) glass ceramics were investigated by Fourier transform infrared spectroscopy (FTIR),X-ray diffractometry (XRD) and scanning electron microscopy (SEM).The results show that the increasing amount of B2O3 causes the increase of the contents of [BO3],[BO4] and [SiO4],which deduces the increase of CaB2O4 and α-SiO2 and the decrease of CaSiO3 correspondingly.No new phase is observed throughout the...     

Ba3La2Ti2Ta2O15: A new microwave dielectric of A5B4O15-type cation-deficient perovskites

The synthesis, structure and properties of a new A5B4O15-type cation-deficient perovskite Ba3La2Ti2Ta2O15 were discribed. The compound was prepared by the conventional solid-state reaction route. The phase and structure of the ceramics were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）. The results reveal that the compound is successfully synthesized. The compound crystallizes in the trigonal system with unit cell parameter a=5.6730（2） A, c=11.6511（2） A, V=324.93（1） A^3 and Z=1. The microwave dielectric properties of the ceramic are studied using a network analyzer, and it shows a high dielectric constant of 45.1, a high quality factors with Q×fof21 029 GHz, and a positive τf of 5.3 ppm℃^-1.     

La3+掺杂BaAl2Si2O8陶瓷的结构及微波介电性能

采用传统固相反应合成Ba_1-xLa_xAl₂Si₂O₈(x=0, 0.005, 0.01, 0.015, 0.02),探讨不同La³⁺取代量对Ba_1-xLa_xAl₂Si₂O₈(BAS)陶瓷晶体结构和微波介电性能的影响,根据第一性原理计算讨论离子的取代位置,比较不同位置的形成能。结果表明：La³⁺最有可能取代Ba²⁺;La³⁺能有效地促进六方相向单斜相的转变,当x=0.02时,转化率达到98.71%,提高了品质因数(Q×f值)和谐振频率温度系数(τ_f);烧结温度1400 ℃、x =0.01时Ba_0.99La_0.01Al₂Si₂O₈陶瓷表现出最佳介电性能,Q×f为25674 GHz,密度ρ为3.30 g/cm³,介电常数ε_r为6.938,谐振频率温度系数τ_f 为−42.79×10^–6/ ℃。     

Microwave sintering of Ca0.6La0.2667TiO3 microwave dielectric ceramics

Ca0.6La0.2667TiO3 ceramics were prepared by conventional and microwave sintering techniques and their sinterability,microstruc-ture,and microwave dielectric properties were investigated in detail for comparison.Densified Ca0.6La0.2667TiO3 ceramics were obtained by microwave sintering at 1350oC for 30 min and by conventional sintering at 1450oC for 4 h.An unusual phenomenon was found that some larger grains(grain size range:8-10 μm) inclined to assemble in one area but some smaller ones(grain size range:2-4 μm) inclined to gather in another area in the microwave sintered ceramics.The microwave dielectric properties of Ca0.6La0.2667TiO3 ceramics prepared by micro-wave sintering at 1350oC were as follows:dielectric constant(εr) = 119.6,quality factor(Qf) = 17858.5 GHz,and temperature coefficient of resonant frequency(τf) = 155.5 ppm/oC.In contrast,the microwave dielectric properties of the ceramics prepared by conventional sintering at 1450oC were εr = 117.4,Qf = 13375 GHz,and τf = 217.2 ppm/oC.     

Effect of sintering aid CuO-MnO2 on dielectric properties of 0.5Ba(Mg1/3Nb2/3)O3-0.5Ba(Ni1/3Nb2/3)O3 ceramics

Microstructures and microwave dielectric properties of 0.5Ba(Mg_1/3Nb_2/3)O₃-0.5Ba(Ni_1/3Nb_2/3)O₃ ceramics with x wt% CuO−x wt% MnO₂ additions (x=0.25–1) prepared by conventional solid-state route were investigated. It is found that low level-doping of CuO-MnO₂ can significantly improve the density of the specimens and their microwave dielectric properties. The relative density of 0.5Ba(Mg_1/3Nb_2/3)O₃-0.5Ba(Ni_1/3Nb_2/3)O₃ ceramics can be increased by 95% sintering at 1 330 °C due to the liquid phase effect. The second phase is not observed in ceramics with CuO-MnO₂ addition. The parameter ε _r increases with increasing sintering temperature, and Q _f is effectively promoted by CuO-MnO₂ addition. Higher CuO-MnO₂ content would make τ_f value more positive. Meanwhile, ε _r value of 30.5, Q _f value of 63 200 GHz and τ _f value of 0.5 ppm/°C were obtained for 0.5Ba(Mg_1/3Nb_2/3)O₃-0.5Ba(Ni_1/3Nb_2/3)O₃ ceramics with 0.5 wt% CuO-0.5 wt% MnO₂ addition sintered at 1 330 °C for 4 h.     

Dielectric tunable properties of BaTi_4O_9-doped Ba_(0.6)Sr_(0.4)TiO_3 microwave composite ceramics

BaTi4O9-doped Ba0.6Sr0.4TiO3 (BST) composite ceramics were prepared by the conventional solid-state reaction and their structure, dielectric nonlinear characteristics and microwave dielectric properties were investigated. The secondary phase of the orthorhombic structure Ba4Ti13O30 is formed among BST composite ceramics with the increase of BaTi4O9. At the same time, a duplex or bimodal grains size distribution shows fine grains in a coarse grain matrix. The degree of frequency dispersion of dielectric permittivity below Tm is increased initially and then decreased with respect to BaTi4O9. As the BaTi4O9 content increases, the tunability of composite ceramics decreases, while the Q value increases. Inter-estingly, 70 wt% BaTi4O9-doped BST has a tunability ~4.0% (under 30 kV/cm biasing) versus a permit- tivity ~68 and quality factor ~134.1 (at ~3.2 GHz).     

Low-temperature sintering and microwave dielectric properties of Ba<Subscript>2</Subscript>Ti<Subscript>3</Subscript>Nb<Subscript>4</Subscript>O<Subscript>18</Subscript> ceramics

The effects of CuO and H3BO3 additions on the low-temperature sintering,microstructure,and microwave dielectric properties of Ba2Ti3Nb4O18 ceramics were investigated.The addition of less amount of CuO (< 1 wt%) considerably facilitated the densification of Ba2Ti3Nb4O18 ceramics.Appropriate addition of H3BO3 (< 3.5 wt%) remarkably improved the microwave dielectric properties of ceramics.The addition of H3BO3 and CuO successfully reduced the sintering temperature of Ba2Ti3Nb4O18 ceramics from 1300 to 1050 ℃.B...     

Effect of Rare Earth Oxides on the Microstructure and Microwave Dielectric Properties of CaO-MgO-Nb2Os-TiO2 System Ceramics

La2O3 and SrO-doped CaO-MgO-Nb2O3-TiO2 system ceramics were prepared by solid-state ceramic technique.The microstructure and microwave dielectric properties of CaO-MgO-Nb2O5-TiO2-La2O3 cermics can be adjusted by varying the amount of La^3＋ or Sr^2＋ ions respectively.The replacement of Ca^2＋ by La^3＋ at A-site of the ceramics increases the quality factor Q value（ at 7.6GHz）as well as the temperature coefficient of resonant frequency τf and decreases the dielectric constant εr and the substitution of Sr^2＋ at A-site in this ceramics system exhibits opposite characteristics.The microwave properties of La^3＋,Sr^2＋-doped CaO-MgO-Nb2O5-TiO2 system ceramics depend on the degree of octahedral distortion inside materials.     

稀土Nd掺杂对Sr（Fe0.5Nb0.5）O3基介质陶瓷巨介电性能的影响

铁铌酸锶是一种重要的介质材料,具有复合钙钛矿结构,同其他介质材料相比,具有相对高的介电常数的优点,在高储能等领域有重要的应用潜力,是一种用途广泛的功能陶瓷材料．实验以Sr（Fe0.5Nb0.5）O3基陶瓷为研究对象,研究了稀土Nd掺杂对该系陶瓷巨介电性能的影响．结果表明：随着Nd抖掺杂量的增加,陶瓷样品的介电常数逐渐变大;随着温度的上升,陶瓷体系的介电常数也逐渐增大;Nd抖含量x≤0．10时,陶瓷样品有着良好的频率稳定性,x=0．10的陶瓷样品在100kHZ下有着良好的温度稳定性．