AgSnO2电接触材料熔桥行为的高速摄像研究

本研究以AgSnO₂电接触材料为研究对象,借助高速摄像技术并与电接触试验机组成电接触-高速摄像试验体系,观测电触头对在不同负载条件下熔桥行为的基本特征和规律,并进行定量测量研究,同时通过扫描电镜(SEM)和能谱分析(EDS)对熔桥行为后触头表面的微观结构和元素分布进行分析。结果表明,AgSnO₂触头熔桥演化行为可分为接触区域熔化、熔桥稳定存在和熔桥失稳及断开三个阶段,熔桥和电弧现象可以同时存在,并且存在一定的协同和竞争关系,AgSnO₂触头材料的熔桥尺寸为微米级(0.027-0.295 mm),熔桥直径随电流的增大而增大,熔桥长度随电流的增大而减小,熔桥演化行为过程中熔桥形状依次表现为墩粗型、圆柱型和哑铃型,熔桥行为会改变触头的表面形貌和元素分布。     

不同方法制备的AgSnO2TiB2 电接触材料的微观结构和电弧侵蚀行为

分别采用球磨法、可溶性淀粉模板法和滤纸模板法制备了AgSnO₂TiB₂复合粉末,并利用火花等离子体烧结技术（SPS）制备了块体材料。对Ag4%SnO₂4%TiB₂（质量分数）电接触材料的物理性能和电弧侵蚀特性进行了研究。结果表明,模板的空间限域效应有效地改善了增强相在基体中的均匀分散,提高了Ag4%SnO₂4%TiB₂接触材料的导电率和硬度。与球磨法相比,滤纸模板法和淀粉模板法制备的Ag4%SnO₂4%TiB₂复合材料的电导率分别增加了12.18倍和9.60倍, 显微硬度分别增加了17.10%和33.94%。滤纸模板更有利于SnO₂和TiB₂的均匀分散,减少集中电弧侵蚀和飞溅损失,因此具有更好的抗弧蚀性。     

SnO2 增强相对AgCuOIn2O3 电触头材料显微组织与性能的影响

采用反应合成法结合塑性变形工艺制备了不同SnO₂含量的AgCuOIn₂O₃SnO₂电触头材料,利用扫描电镜和金相显微镜表征了材料的微观形貌及显微组织,分析对比了不同SnO₂含量的材料金相组织及其增强相的分布均匀性,并利用X射线衍射分析了材料的物相结构。测量了材料的抗拉伸强度、硬度、电阻等性能。结果表明：添加适量的SnO₂能使组织中的孔隙尺寸缩小、其他缺陷明显减少。氧化物弥散分布在银基体中,极大地改善了AgCuOIn₂O₃电触头材料的显微组织均匀性。在SnO₂含量不变时,材料的电阻率随塑性变形程度增加而有所降低;随着SnO₂含量增多,电阻率呈现先降低后升高的趋势,最后趋于定值,约为2.4 μΩ·cm。添加SnO₂后各试样材料的硬度均显著升高,SnO₂含量为1%（质量分数）的材料具有最优的抗拉伸强度和延伸率。     

SnO2@TiO2核-壳纳米线的制备及其光催化性能研究

本文通过固-液-气(VLS)生长机制,利用化学气相沉积法(CVD)制备SnO₂纳米线。利用原子层沉积(ALD)以钛酸四异丙酯为前驱体在SnO₂纳米线表面沉积不同厚度的TiO₂壳层,形成SnO₂@TiO₂核-壳纳米线结构。通过中间Al₂O₃插层,分别制备出金红石和锐钛矿两种不同晶型的TiO₂,从而制备出两种不同复合结构的SnO₂@TiO₂核-壳纳米线。实验研究该复合结构中TiO₂的厚度与晶型对紫外光下光催化降解甲基橙溶液活性的影响。     

原位氧化工艺制备Ag-92SnO2In2O3电接触材料研究

以Ag-65SnIn-8熔炼雾化粉体为原料,采用原位氧化工艺制备了Ag-60SnO₂In₂O₃中间体粉体,与雾化纯银粉配比成Ag-92SnO₂In₂O₃材料,通过混粉-等静压-烧结-热压-挤压技术制备Ag-92SnO₂In₂O₃带材,再通过固相复合工艺制备所需要的Ag-92SnO₂In₂O₃/Cu/Fe电接点材料。相对比常规氧化工艺制备的Ag-60SnO₂In₂O₃中间体粉体制备的Ag-92SnO₂In₂O₃/Cu/Fe电接点材料,原位氧化工艺制备的Ag-92SnO₂In₂O₃/Cu/Fe电接点材料电阻率可达2.1μΩ.cm以下,硬度可达85~110HV;产品应用于380V,65A,功率因数0.7的电动机负载电路的热保护器中,电器寿命满足5000次分断要求,替代AgCdO/Cu/Fe电接点材料,实现环保,无镉化切换。     

AgSnO2触点涂层的组织与性能

采用高能球磨方法制备Ag-SnO₂复合粉末,将球磨粉末冷喷涂到铜基板上,能够获得几毫米厚度的较致密的AgSnO₂触点涂层。850 ℃退火后涂层发生进一步致密化并且在原始粉末颗粒边界形成富银区,涂层材料硬度略为降低。电弧侵蚀和电接触试验表明,冷喷涂的AgSnO₂涂层材料具有低而稳定的接触电阻,能够满足触点的基本性能要求。     

新型AgZrB2 触头材料的制备及电气性能

采用超声、球磨和放电等离子烧结相结合的方法制备了不同ZrB₂含量（3%,5%,7%,质量分数）的新型AgZrB₂触头材料,并通过电接触试验研究了触头材料的电弧侵蚀和材料转移行为。结果表明,ZrB₂含量显著影响AgZrB₂触头材料的耐电弧侵蚀性能。Ag-3% ZrB₂触头材料具有稳定的闭合/分断燃弧能量和持续时间,表现出较好的耐电弧侵蚀性能。但是,过多的ZrB₂会导致更高的闭合燃弧能量和更长的闭合燃弧时间,并且分断燃弧能量和时间会产生较大的波动,电弧侵蚀较为严重,这说明过量的ZrB₂不利于提高触头材料的耐电弧侵蚀性能。此外,Ag-3% ZrB₂和Ag-5% ZrB₂触头材料具有相同的材料转移模式——从阳极向阴极转移,而Ag-7% ZrB₂触头材料则呈现出相反的转移模式——从阴极向阳极转移。     

不同粒度银粉的Ag-TiB2 触头材料电弧侵蚀行为

采用不同粒度的银粉和放电等离子烧结工艺制备了Ag-4% TiB₂（质量分数,下同）触头材料,测量了Ag-4% TiB₂触头材料的致密度、导电率和硬度,并在真空下对Ag-4% TiB₂触头材料进行了电弧侵蚀实验。采用扫描电子显微镜对Ag-4% TiB₂触头材料电弧侵蚀后的表面形貌进行了表征,采用TDS-2014双通道数字存储示波器记录了燃弧波形,并计算了燃弧时间,对电弧侵蚀机理进行了探讨。结果表明,Ag-4% TiB₂触头材料的致密度、导电率和硬度均随着Ag粒度的降低而增加。另外,采用细银粉制备的Ag-4% TiB₂触头材料具有较长的燃弧时间、较大的侵蚀面积和较浅的蚀坑,表明细小的Ag颗粒有助于电弧分散,能够提高材料的耐电弧侵蚀性能。     

MSM结构TiO2基紫外探测器的制备及光电特性研究

采用RF磁控溅射技术在石英衬底上生长了厚度可调的锐钛矿相TiO₂薄膜,继而采用光刻技术在薄膜上生长了Ag叉指电极,获得了MSM结构TiO₂基紫外探测器。I-V特性测试结果表明Ag与TiO₂之间表现出优良的欧姆接触特性,所制备探测器为欧姆接触。此外,TiO₂薄膜厚度对探测器的光电性能影响显著,当薄膜厚度达到197 nm时,光电性能达到最高。此时,光电流高出暗电流近2.5个数量级,紫外光区的响应度高出可见光区近2个数量级。所制备Ag/TiO₂MSM紫外探测器表现出高灵敏度和可见盲特性。     

AgSnO2NiO电触头材料电接触性能的研究

采用合金内氧化法制备了不同NiO含量的AgSnO₂NiO电触头材料,在JF04C触点材料测试机上对材料进行电接触实验,研究了该材料的接触电阻、抗熔焊性、材料转移特性,并通过扫描电镜对试样阴/阳极表面电侵蚀下的微观形貌进行了分析。结果表明,NiO的加入有利于减小并稳定接触电阻,电压不高于18 V时,接触电阻随开闭次数的增加呈现出缓慢下降最后趋于稳定的趋势,而当测试电压增大到25 V时,各试样的接触电阻随之增大,且各试样接触电阻的增幅不同;材料的熔焊力和燃弧能量均随电压的增加而增大,NiO含量的增加并不会明显降低熔焊力,但起到了减小燃弧能量的作用。电接触过程材料为阳极转移,材料总损耗量随NiO的加入量增多而降低,阴极触头表面明显附有一层凝固后的熔融金属液形貌,材料转移主要以熔桥方式进行,且凸峰表面呈现浆糊状尖峰的形貌特征。     

Preparation and microstructure characterization of a nano-sized Ti<Superscript>4+</Superscript>-doped AgSnO<Subscript>2</Subscript> electrical contact material

A Ti⁴⁺-doped nano-structured AgSnO₂ material was prepared using sol-gel method and characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and scanning electron microscopy (SEM). The results show that Ti⁴⁺ cations are successfully doped into the crystal lattice of SnO₂, and thus significantly improve the electrical conductivity of the sample. Furthermore, the coating of Ag on Ti⁴⁺-doped SnO₂ nano-sized particles enhances the surface wettability and enables the resulting AgSnO₂ material to have better mechanical properties.     

Ag/SnO2电接触材料的制备及其燃弧特性研究

以Ag粉和自制SnO_2为原料,采用机械合金化和热挤压拉拔工艺制备Ag/SnO_2电接触材料。采用冷压焊工艺设备制备了Ag/SnO_2铆钉元件。采用X射线衍射仪(XRD)对Ag粉、自制SnO_2及Ag/SnO_2复合粉体进行物相分析;采用扫描电子显微镜(SEM)对电寿命测试前后Ag/SnO_2铆钉元件的表面形貌进行了表征。并考察了不同电气参数对Ag/SnO_2铆钉元件的燃弧特性、电弧侵蚀形貌、质量损失及其失效退化模式等特性研究。结果表明:Ag/SnO_2电接触材料在电弧作用下相比于纯Ag表现出更高的燃弧时间和燃弧能量,平均闭合与断开燃弧时间分别为51.78和25.86 ms,比纯Ag多出4.87和2.78 ms;同理,平均闭合、断开燃弧能量分别为988.14和493.85 mJ,比纯Ag高出104.93和58.76mJ;随着循环操作次数的增加,Ag/SnO_2电接触材料的总质量损失为负值,其失效退化模式主要表现为液滴飞溅与SnO_2颗粒上浮。     

Effect of Oxide Buffer Layer on the Thermochromic Properties of VO2 Thin Films

VO₂ thin films were deposited on soda lime glass substrates with ZnO, TiO₂, SnO₂, and CeO₂ thin films applied as buffer layers between the VO₂ films and the substrates in order to investigate the effect of buffer layer on the formation and the thermochromic properties of VO₂ film. Buffer layers with thicknesses over 50 nm were found to affect the formation of VO₂ film, which was confirmed by XRD spectra. By using ZnO, TiO₂, and SnO₂ buffer layers, monoclinic VO₂ (VO₂(M)) film was successfully fabricated on soda lime glass at 370 °C. On the contrary, films of VO₂(B), which is known to have no phase transition near room temperature, were formed rather than VO₂(M) when the film was deposited on CeO₂ buffer layer at the same film deposition temperature. The excellent thermochromic properties of the films deposited on ZnO, TiO₂, and SnO₂ buffer layers were confirmed from the temperature dependence of electrical resistivity from room temperature to 80 °C. Especially, due to the tendency of ZnO thin film to grow with a high degree of preferred orientation on soda lime glass at low temperature, the VO₂ film deposited on ZnO buffer layer exhibits the best thermochromic properties compared to those on other buffer layer materials used in this study. These results suggest that deposition of VO₂ films on soda lime glass at low temperature with excellent thermochromic properties can be achieved by considering the buffer layer material having structural similarity with VO₂. Moreover, the degree of crystallization of buffer layer is also related with that of VO₂ film, and thus ZnO can be one of the most effective buffer layer materials.     

Effects of Oxide-Modified Spherical ZnO on Electrical Properties of Ag/ZnO Electrical Contact Material

Silver-zinc oxide (Ag/ZnO) electrical contact material is widely used as contacts of the medium duty switching devices. Effects of modified ZnO on properties of Ag/ZnO electrical contact material were investigated in this work. NiO and CuO were introduced to modify spherical ZnO by a chemical solution nano-coating method. Ag/ZnO contacts prepared using the modified spherical ZnO were produced by powder metallurgy (PM) method in a muffle furnace in temperature ranges from 750 to 900 °C. Results show that electrical conductivity, stability of relative density, and Vickers’ hardness of Ag/ZnO electrical contact material can be improved by the addition of NiO because of the formation of NiO solid solution Zn_0.2Ni_0.8O. The addition of CuO to Ag/ZnO electrical contact material makes arcing energy and mass loss lower. Since this is attractive for a longer service life, using NiO and CuO co-modified ZnO as a second phase may be a promising way to improve properties of Ag/ZnO electrical contact material. Hence, the presented results could also be useful for the design of a new Ag/ZnO electrical contact material.     

Exploring the microstructural and electrical properties of SnO2 nanorods prepared by a widely applicable route

Tin dioxide (SnO₂) is a unique functional material with significant technological applications. A good understanding of the microstructure and electronic properties of this material is of fundamental importance in the development of nanodevices. In this paper, SnO₂ nanorods were prepared in bulk quantity by a widely applicable route based on reaction processes. Microstructural investigations by X-ray diffraction and transmission electron microscopy indicated that these nanorods have the tetragonal rutile form of SnO₂, and are structurally perfect and uniform, with widths of 10–25 nm, and lengths of several hundred nanometers to a few micrometers. Electrical measurements by connecting a single SnO₂ nanorod in field-effect transistor configuration showed that these nanorods exhibit good electrical properties. The findings indicate that other one-dimensional nanostructural materials may be manipulated by using this simple technique. This work might provide insight into new opportunities for applications as building blocks for nanoelectronics and active sensing materials.     

掺杂不同粒度添加剂的AgSnO2触头材料的物理特性和电接触特性

在本文中,研究了添加剂的粒度和AgSnO2触头材料的性能之间的关系。Bi2O3、TiO2和CeO2被选作添加剂,并且四种粒度被选择,与此同时添加剂的比例通过润湿性试验获得。AgSnO2 触头材料通过粉末冶金法制备。对掺杂不同种类不同粒度的AgSnO2触头材料的物理和电接触性能进行了研究,结果表明三种添加剂（Bi2O3、TiO2和CeO2）的粒度对触头材料性能的影响趋势是一致的,并且细的添加剂颗粒有利于AgSnO2触头材料性能的改进。随着添加剂粒度的减小,AgSnO2触头材料的物理和电接触性能都得到了提高,并且添加剂的最佳粒径200nm。结果表明AgSnO2触头材料的性能可以通过选择添加剂的最佳粒度改进。