Photoluminescence and third-order nonlinear optical limiting properties of Sn1-xNdxO2 thin films deposited via spray pyrolysis

In the present work, spray pyrolysis method was adopted to synthesis nano thin films of Sn_1-xNd_xO₂ (x = 0.01 to 0.1) possessing tetragonal structure with (1 1 0) plane orientation. Nd doping reduced the overall crystallinity of the films, however Sn_0.92Nd_0.08O₂ film showed crystallite size of 18.7 nm, similar to that of the pure film. The morphology changed to distinct grains at lower doping concentration, beyond which a fibrous nature evolved but again changed to smaller grains with further increase in the doping. The oxidation states of the constituent elements were confirmed using XPS. The transmittance of the films reduced due to incorporation of Nd ions. A decrease in the energy band gap was also noticed in the films following dopant addition. The PL emissions corresponding to the Nd ion transitions was found in the NIR region resulting from internal 4f-shell transitions of Nd³⁺ ions. Other defect related emissions like the one from oxygen vacancies also showed up in the UV and visible wavelength regions, which were responsible for a near white light emission. The third-order optical nonlinearity of the films was confirmed using the Z-scan technique. All the Sn_1-xNd_xO₂ films till 8 at. % of doping showed reverse saturable absorption. The highest and lowest nonlinear absorption coefficient was exhibited by Sn_0.92Nd_0.08O₂ and Sn_0.98Nd_0.02O₂ films, respectively. Depending on the Nd concentration, the films either showed self-focusing or self-defocusing behavior and influenced the nonlinear refractive indices of the films. The least optical limiting values among the doped films was obtained in the range of 1.73 kJ/cm² for Sn_0.92Nd_0.08O₂ films.     

Room temperature tunability of ferroelectricity and dielectricity in La and Mn codoped BiFeO3 nanoflakes: Implications for electronic devices applications

This study sheds a light on the in-situ growth of nanoflakes structure in Bi₀.₉La₀.₁Fe₀.₅Mn₀.₅O₃ (BLFMO) thin film. The BLFMO thin films of various thicknesses were grown on LaNiO₃ (LNO) coated Si (100) substrates using pulsed laser deposition technique. A long-range crystal structure of the as prepared BLFMO thin films was studied by X-ray diffraction measurements, which shows that the LNO buffer layer allows growth for a specific orientation. The compact and densely packed nanoflake structures in BLFMO thin film samples were confirmed by surface morphological investigations. To measure the polarization versus electric field (p-E) loop of BLFMO chip samples, a standard bipolar sinusoidal waveform with its magnitude of 250 kV/cm was applied at the frequency of 1 kHz. The maximum saturation and remnant polarizations of 104.50 μC/cm² and 86.24 μC/cm² respectively were probed for a critical thickness (420 nm) of the BLFMO layer. The voltage polarity-dependent leakage current behavior of Ag/BLFMO/LNO thin-film capacitor is thoroughly explored in detail. The value of leakage current density was observed from 1.16 × 10^?4 to 2.24 × 10^?5 J/cm² for BLFMO thin films at an external applied electric field of 300 kV/cm. The highest tunability ～60.20% and minimum temperature capacitance coefficient ～1.23 × 10^?3 were also observed for the same critical thickness of proposed chip element. The present study may open up a new opportunity to fabricate thin film based ferroelectric memory devices.     

Thickness dependent growth and ferroelectric/dielectric properties of phase-pure 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 thin film derived from a modified sol-gel process

Annealing parameter and thickness are two significant factors affecting microstructure and electrical performance of sol-gel derived 0.65Pb(Mg_1/3Nb_2/3)O₃?0.35PbTiO₃ (0.65PMN-0.35PT) thin film. In this paper, various durations are firstly selected for the investigations on annealing parameter of 0.65PMN-0.35PT thin film. Enhanced insulating and ferroelectric properties can be obtained for the film annealed for 1 min due to its phase-pure and homogeneous perovskite structure. Based on this, a series of 0.65PMN-0.35PT thin films with various thicknesses by modifying deposition layer are synthesized annealed for 1 min and the effects of thickness on crystalline, insulating, ferroelectric and dielectric properties are characterized. It reveals that thickness-dependent behavior can be noticed for 0.65PMN-0.35PT thin film with the results that the 8-layered film possesses a relative large remanent polarization (P_r) of 23.34 μC/cm², and reduced leakage current density of 10^?9 A/cm² with low dissipation factor (tanδ) of 0.03 can be achieved for the 14-layered film.     

Grafting polythiophene on polyethylene surfaces

Polythiophene (PT) was grafted on PE film using three reaction steps. First, PE films were brominated in the gas phase, yielding PE–Br; second, a substitution reaction of PE–Br with 2‐thiophene thiolate anion gave the thiophene‐functionalized PE; finally PT was grafted on the PE surface using chemical oxidative polymerization to give PE–PT. The polymerization was carried out in a suspension solution of anhydrous FeCl₃ in CHCl₃, yielding a reddish PE–PT film after dedoping with ethanol. ATR‐FTIR shows that the PT was grafted on PE in the 2,5‐position. SEM imaging revealed islands of PT on the PE film. AFM analysis found the thickness of islands to be in the range of 120–145 nm. The conductivity of these thin films was in the range of 10^?6 S cm^?1, a significant increase from the value of ～10^?14 S cm^?1 measured for PE film. © 2003 Society of Chemical Industry     

Synthesis and thermal expansion behaviors of spin-coated Sc2Mo3O12 thin films

Orthorhombic Sc₂Mo₃O₁₂ films have been successfully prepared via spin coating technique followed by annealing at 500–750 °C. The phase composition, microstructure, morphology and negative thermal behavior of the synthesized Sc₂Mo₃O₁₂ films were investigated. XRD and XPS analysis indicate that as-deposited film is amorphous. Orthorhombic Sc₂Mo₃O₁₂ films can be prepared after post-annealing at 500–750 °C for 1 h. The crystallinity of Sc₂Mo₃O₁₂ films gradually improved with the increase of post-annealing temperature. SEM analysis shows as-deposited film is smooth and compact, and the grain size of Sc₂Mo₃O₁₂ film grows up as the post-annealing temperature increases. Variable temperature XRD analysis demonstrates that the synthesized orthorhombic Sc₂Mo₃O₁₂ films show stable thermo-chemical and anisotropic NTE property in 25–700 °C. The corresponding coefficients of thermal expansion (CTEs) of the orthorhombic Sc₂Mo₃O₁₂ film in a, b and c directions are ?6.68 × 10^?6 °C^?1, 5.08 × 10^?6 °C^?1 and ?4.76 × 10^?6 °C^?1, respectively. The whole unit cell of the orthorhombic Sc₂Mo₃O₁₂ film shrinks and the volumetric CTE of the Sc₂Mo₃O₁₂ thin film is ?6.36 × 10^?6 °C^?1, and the linear CTE is about ?2.12 × 10^?6 °C^?1 (α_v = 3α_l).     

Fabrication and characterization of MOCVD (In1-xAlx)2O3 (0.1≤x≤0.6) ternary films

A series of (In_1-xAl_x)₂O₃ (0.1 ≤ x ≤ 0.6) films with tunable bandgap were grown on MgO (100) substrates by MOCVD. The influences of chemical compositions and growth temperatures on the film properties were studied systematically. XRD analyses indicated that the film quality degraded from crystalline to amorphous structure as Al concentration (x) increased. The (In_1-xAl_x)₂O₃ films prepared at 700 °C exhibited better film crystallinity than those of the ones grown at 600 °C. The films prepared at 700 °C with x = 0.1–0.3 showed an epitaxial In₂O₃ <111> orientation with the corresponding growth relationship of In₂O₃ (111)∥MgO (100). The film with x = 0.2 exhibited the best crystallinity and the largest grain size of 25.9 nm. The Hall mobilities and resistivities of the films were influenced evidently by Al concentrations. The Hall mobility showed a monotonous decrease from 12 to 1.1 cm²V^?1s^?1 as x increased from 0.1 to 0.6. The lowest resistivity of 9.2 × 10^?3 Ω cm was acquired for the film with x = 0.2. The average transmittances in the visible region for all the films were beyond 83%. The bandgap of the (In_1-xAl_x)₂O₃ films can be regulated in the range of 3.85–4.88 eV by changing Al concentrations from 0.1 to 0.6.     

Sol-gel processed high-k aluminum oxide dielectric films for fully solution-processed low-voltage thin-film transistors

High-k oxide dielectric films have attracted intense interest for thin-film transistors (TFTs). However, high-quality oxide dielectrics were traditionally prepared by vacuum routes. Here, amorphous high-k alumina (Al₂O₃) thin films were prepared by the simple sol-gel spin-coating and post-annealing process. The microstructure and dielectric properties of Al₂O₃ dielectric films were systematically investigated. All the Al₂O₃ thin films annealed at 300–600?°C are in amorphous state with ultrasmooth surface (RMS ~ 0.2?nm) and high transparency (above 95%) in the visible range. The leakage current of Al₂O₃ films gradually decreases with the increase of annealing temperature. Al₂O₃ thin films annealed at 600?°C showed the low leakage current density down to 3.9?×?10^?7 A/cm² at 3?MV/cm. With the increase of annealing temperature, the capacitance first decreases then increases to 101.1?nF/cm² (at 600?°C). The obtained k values of Al₂O₃ films are up to 8.2. The achieved dielectric properties of Al₂O₃ thin films are highly comparable with that by vapor and solution methods. Moreover, the fully solution-processed InZnO TFTs with Al₂O₃ dielectric layer exhibit high mobility of 7.23?cm² V^?1 s^?1 at the low operating voltage of 3?V, which is much superior to that on SiO₂ dielectrics with mobility of 1.22?cm²/V^?1 s^?1 at the operating voltage of 40?V. These results demonstrate that solution-processed Al₂O₃ thin films are promising for low-power and high-performance oxide devices.     

Multiferroic and magnetoelectric properties of lead-free Ba0.8Sr0.2Ti0.9Zr0.1O3-Ni0.8Zn0.2Fe2O4 composite films with different deposition sequence

Ba_0.8Sr_0.2Ti_0.9Zr_0.1O₃/Ni_0.8Zn_0.2Fe₂O₄(BN) and Ni_0.8Zn_0.2Fe₂O₄/Ba_0.8Sr_0.2Ti_0.9Zr_0.1O₃ (NB) composite film were deposited on Pt/Ti/SiO₂/Si substrates by the sol-gel method and spin-coating method. The results show that the deposition sequences of the composite films have significant influence on the ferroelectric, ferromagnetic and magnetoelectric properties of the composite films. Two composite films possess not only good ferroelectric and ferromagnetic properties but good magnetoelectric properties as well. The NB composite film has clear interface between the ferroelectric film and ferromagnetic film and possesses greater magnetoelectric coupling effect than the BN composite film under the same H_bias. The maximum value of α_E is 70.14?mV?cm^?1 Oe^?1 was obtained in the NB composite film when H_bias is 638?Oe.     

Influence of doping with various cations on electrical conductivity of apatite-type neodymium silicates

Apatite-type neodymium silicates doped with various cations at the Si site, Nd₁₀Si₅BO_27?δ (B=Mg, Al, Fe, Si), were synthesized via the high-temperature solid state reaction process. X-ray diffraction and complex impedance analysis were used to investigate the microstructure and electrical properties of Nd₁₀Si₅BO_27?δ ceramics. All Nd₁₀Si₅BO_27?δ ceramics consist of a hexagonal apatite structure with a space group P63/m and a small amount of second phase Nd₂SiO₅. Neodymium silicates doped with Mg²⁺ or Al³⁺ cations at the Si site have an enhanced total conductivity as contrasted with undoped Nd₁₀Si₆O₂₇ ceramic at all temperature levels. However, doping with Fe³⁺ cations at the Si site has a little effect on improving the total conductivity above 873 K. The enhanced oxide-ion conductivity in a hexagonal apatite-type structure depends upon the diffusion of interstitial oxide-ion through oxygen vacancies induced by the Mg²⁺ or Al³⁺ substitution to the Si⁴⁺ site and through the channels between the SiO₄ tetrahedron and Nd³⁺ cations. At 773 K, the highest total conductivity is 4.19×10^?5 S cm^?1 for Nd₁₀Si₅MgO₂₆ ceramic. At 1073 K, Nd₁₀Si₅AlO_26.5 silicate has a total conductivity of 1.55×10^?3 S cm^?1, which is two orders of magnitude higher than that of undoped Nd₁₀Si₆O₂₇.     

Effects of specific surface area of electrode and different electrolyte on capacitance properties in nano porous-structure CrN thin film electrode for supercapacitor

Thickness and specific surface area of the film electrode are critical parameters for supercapacitors. The relationship between the thickness and the specific surface area of the film directly affects the capacitance and electrochemical stability performance of super supercapacitors, which virtually affects the contact chance of ion in the electrolyte on the surface of electrode and the ion transport path of electrode. In this paper, the CrN thin films with a thickness of 200–3500 nm are prepared using direct current magnetron sputtering. Atomic force microscopy (AFM) technique is introduced to investigate the relationship between thickness and the specific surface area of the CrN films. The electrochemical performances of CrN electrode with the nanoporousper structure is analyzed in different electrolytes H₂SO₄, Na₂SO₄ and NaCl aquous solutions. The specific surface area of the film increases linearly with the film thickness increases. The areal capacitance is also linearly related to the specific surface area. The spurtted CrN film with a thickness of 3370 nm has a specific surface of up to 43.59 cm² per cm² footprint area. Its areal and volume capacitances reache to 53.92 mF cm^?2 and 650 F cm^?3 at 5 mV s^?1, respectively. In addition, the areal capacitance of CrN film electrode with 655 nm possesses reaches to 40.53 mF cm^?2 for 0.5 M H₂SO₄ solution, 32.69 mF cm^?2 for 0.5 M Na₂SO₄ solution and 9.17 mF cm^?2 for NaCl solution at a scan rate of 5 mV s^?1. Furthermore, the CrN film electrode exhibits excellent capacitance retention of 95.3%, 93.8% and 89.9% in H₂SO₄, Na₂SO₄ and NaCl electrolytes, respectively, after 2000 cycles. Therefore, the sputtered CrN thin film is an potential electrode material for electrochemical supercapacitors.     

Conductance measurement of thin oxide films on a platinum anode

Conductance of two types of oxides, which were galvanostaticaly formed on a smooth platinum anode with 200 mA/cm² at 45°C in 0.5 M H₂SO₄, were measured with a new conductance cell.It was found that two types of oxide films differ in conductance property. The conductivity of the one, a outermost monolayer oxide film, was equal to that of metalic Pt. The other, a multilayer oxide which grows under the monolayer oxide, showed a definite conductivity lower than that of the metal. The conductivity per monolayer of this oxide in the vertical direction of the film plane was 0.67 × 10⁵ Ω^?1 per unit real surface area. The specific conductance value of the multilayer oxide was estimated to be about 1–2 × 10^?3 Ω^?1 cm^?1, assuming that the multilayer oxide is composed of PtO₂ and that this monolayer is twice the thickness of a PtO monolayer.     

Effect of (Zn,Mn) co-doping on the structure and ferroelectric properties of BiFeO3 thin films

BiFe_1-2xZn_xMn_xO₃ (BFZMO, with x = 0–0.05) thin films were synthesized via sol–gel method. Effects of (Zn, Mn) co-doping on the structure, ferroelectric, dielectric, and optical properties of BiFeO₃ (BFO) films were investigated. BFZMO thin films exhibit rhombohedral structure. Scanning electron microscopy (SEM) images indicate that co-doping leads to a decrease in grain size and number of defects. Leakage current density (4.60 × 10^?6 A/cm²) of BFZMO film with x = 0.02 was found to be two orders of magnitude lower than that of pristine BFO film. Owing to decreased leakage current density, saturated P–E curves were obtained. Maximum double remnant polarization of 413.2 μC/cm² was observed for BFZMO thin film with x = 0.02, while that for the BFO film was found to be 199.68 μC/cm². The reason for improved ferroelectric properties is partial substitution of Fe ions with Zn and Mn ions, which resulted in a reduction in the effect of oxygen vacancy defects. In addition, co-doping was found to decrease optical bandgap of BFO film, opening several possible routes for novel applications of these (Zn, Mn) co-doped BFO thin films.     

Isothermal transient current studies in cellulose acetate films

Step voltage transient current studies have been made in cellulose acetate films as a function of filed and thickness. A logarithmic plot (Scherr-Montroll plot) of the transient current vs. time gives a knee at a time t_T, which is interpreted as the transit time of the charge carrier. The value of the carrier mobility has been estimated to be 3.9 × 10^?9 cm².V^?1.S^?1 in cellulose acetate film. The carrier mobility in iodine-doped (2% w/w) cellulose acetate film has also been determined from Scher-Montroll plot and is found to be 3.3 × 10^?7 cm².V^?1.S^?1.     

Fluorescence measurements of the diffusion coefficient for butylated hydroxyanisole in low-density polyethylene

Measurement of the diffusion coefficient (D) of butylated hydroxyanisole (BHA) in low density polyethylene at 31°C was made by two techniques. (1) Measurement of diffusion rate in the absence of solvent was made by use of a film stack with BHA-loaded discs on top and bottom. After a given diffusion time, the films were separated and the BHA extracted from the films into 1 -propanol. The fluorescence of the solutions provided values of BHA concentration as a function of film position in the stack, from which the value 3.4 (SD 0.3) × 10^?9 cm² s^?1 for D was calculated. (2) Fluorescence monitoring, under oxygen free conditions, was used to measure rate of BHA extraction from a film into 1 -propanol at 31°C, and gave the value 3.8 × 10^?9 cm² s^?1 for D which agrees well with the value determined by measurement in the absence of solvent.     

Thickness dependence of microstructure,dielectric and leakage properties of BaSn0.15Ti0.85O3 thin films

The BaSn_0.15Ti_0.85O₃ (BTS) thin films are prepared on Pt-Si substrates with thickness ranging from ~ 60?nm to ~ 380?nm by radio frequency magnetron sputtering. The effects of thickness on microstructure, surface morphologies and dielectric properties of thin films are investigated. The thickness dependence of dielectric constant is explained based on the series capacitor model that the BTS thin film is consisted by a BTS bulk layer and an interfacial layer (dead layer) between the BTS and bottom electrode. The thin films with thickness of 260?nm give the largest figure of merit of 76.9@100?kHz, while the tunability and leakage current density are 64.6% and 7.46?×?10^?7 A/cm² at 400?kV/cm, respectively.     

Polypyrrole conductive polymer characteristics as an optical display device

The redox dynamic of electrochemically prepared thin films of polypyrrole is studied. A semi-empirical formula to explain the redox behavior is formulated and it seems applicable to the reduction dynamic. The redox dynamic is dominated by a diffusion process, depending on the relation between the film thickness and the rise time (t_1/2) of the reduction process. The diffusion coefficient, D, was measured to be 2 × 10^?9 cm²/sec for perchloride (ClO₄^?) anion dopant and 1.1 × 10^?9 cm²/sec for para-toluenesulfonate (PTS^?) anion dopant. The polypyrrole films exhibited a color change during the oxidation and reduction processes. The electrooptical properties of these films are studied.     

The properties of Al-doped TiO2 nanoceramic films deposited by simultaneous rf and dc magnetron sputtering

The Al-doped TiO₂ (TiO₂:Al) nanoceramic films were deposited by simultaneous rf magnetron sputtering of TiO₂ and dc magnetron sputtering of Al. The advantage of this method is that the Al content could be independently controlled. Al₂O₃ was favorable to form with decreasing Al content. The nanocrystallinity was enhanced by increasing the Al contents, because the increase of Al contents resulted in that the deposited films to be nearly stoichiometric. The morphologies of TiO₂:Al films were significantly affected by Al contents. The nonlinear refractive index of TiO₂:Al film on the glass substrate was measured by Moiré deflectometry, and was of the order of 10^?8 cm² W^?1. As Al content increased, the TiO₂:Al film had high VIS-IR transmission, high optical energy gap, high linear refractive index and low porosity.     

Mixed grains and orientation-dependent piezoelectricity of polycrystalline Nd-substituted Bi4Ti3O12 thin films

Polycrystalline Bi_3.15Nd_0.85Ti₃O₁₂ (BNT) thin films were prepared on Pt/Ta/glass substrates by a pulsed laser deposition method. X-ray diffraction measurements revealed that the BNT thin films were preferentially oriented along the (117) direction although they possessed a polycrystalline structure. Good ferroelectric properties of the BNT thin film were observed with a remnant polarization of 13 μC/cm² (2 P_r ~26 μC/cm²). The fatigue resistance test exhibited that the ferroelectric polarization of the BNT thin film degraded significantly after around 10⁹ switching cycles, which can be attributed to its crystal structure. We investigated the surface morphology and ferroelectric domain structure by atomic force microscopy (AFM) and piezoresponse force microscopy (PFM), respectively. Interestingly, mixed grains consisting of long and circular shapes were observed on the BNT film surface, which corresponded to a- and c-axes orientations of crystal growth, respectively. The PFM study revealed that the piezoelectric coefficient (d₃₃) of the long grains was much larger than that of the circular grains.     

Effects of Tb doping on structural and electrical properties of 47(Ba0.7Ca0.3)TiO3–0.53Ba(Zr0.2Ti0.8)O3 thin films at various annealing temperature by pulsed laser deposition

The ceramic thin films of 47(Ba_0.7Ca_0.3)TiO₃–0.53Ba(Zr_0.2Ti_0.8)O₃ (BCZT) + x (x = 0.2, 0.3, 0.4 and 0.5) mol% Tb were grown on Pt(111)/Si substrates with various annealing temperature by pulsed laser deposition. The XRD spectra confirm that Tb element can enhance the (l10) and (111) orientations in ceramic films. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) images show that Tb-doping can increase particle size effectively. The surface of Tb-doped film annealed at 800 ℃ is uniform and crack-free, and the average particle size and mean square roughness (RMS) are about 280 nm and 4.4 nm, respectively. Comparing with pure BCZT, the residual polarization (P_r) of 0.4 mol% Tb-doped film annealed at 800 ℃ increase from 3.6 to 9.8 μC/cm². Moreover, the leakage current density value of Tb doped films are one order of magnitude (5.33 × 10^?9?1.97 × 10^?8 A/cm² under 100 kV/cm) smaller than those of pure BCZT films (1.02 × 10^?7 A/cm²).     

The effect of solvent water content on the dielectric properties of Al2O3 films grown by atmospheric pressure mist-CVD

Aluminum oxide (Al₂O₃) dielectric layers were grown by a mist-chemical vapor deposition (mist-CVD) process at 300 °C, using solvent mixtures containing acetone and water. As the acetone to water ratio was varied from 9:1 to 7:3, the leakage current of Al₂O₃ at an electric field of 7 MV/cm² decreased from 9.0 × 10^?7 to 4.4 × 10^?10 A/cm², and the dielectric constant increased from 6.03 to 6.85 with improved hysteresis during capacitance-voltage measurements. Consequently, the most robust Al₂O₃ films were obtained at an acetone to water ratio of 7:3, with a dielectric constant (κ) close to the ideal value 7.0, and a breakdown field of approximately 9 MV/cm. Thin film transistors (TFTs) incorporating In-Sn-Zn-O (ITZO) as the semiconductor were fabricated with the Al₂O₃ (7:3) dielectric onto p⁺⁺-Si substrates. The devices exhibit high electrical performance, with a high field effect mobility of 42.7 cm²V^?1s^?1, and a small subthreshold swing (S.S.) value of 0.44 V/decade.