光纤通信SDH系统用石英晶体振荡器的研制

介绍了压控石英晶体振荡器的原理，设计特点和性能，针对光纤通信ＳＤＨ系统上的时钟频率源的基本原理和ＳＤＨ的网同步对网络单元时钟的要求，采有了适当频率温度曲线的谐振器，变容二极管移相器，高性能的放大电路，波形转换电路，振荡器具有高的稳定度，良好的调谐范围和占空比，当环境温度在０℃，到７０℃范围内变化时，作为网络单元时钟的压控振荡器的频率漂移优于±１ＰＰｍ，秒稳优于２．５×１０＾－９／秒。     

2.5～4.4Gb／s光纤无中继传输实验系统

本文报导在４×６２２Ｍｂ／ｓ）×１６０ｋｍ等三个常规单模光纤无中继传输实验系统，以及４．３５４Ｇｂ／ｓ×２００ｋｍ常规单模光纤传输实验系统方面的研究成果．带有掺饵光纤功放的高稳定度光发射机输出功率分别＞＋４ｄＢｍ／信道（４×６２２Ｍｂ／ｓ）和１１ｄＢｍ（单路２．５Ｇｂ／ｓ），频率稳定度分别优于６×１０－６和４．１×１０－６．带有掺铒光纤前放的四路光接收机灵敏度达到－４６．８ｄＢｍ（６２２Ｍｂ／ｓ，ＮＲＺ２２３－１ＰＲＢＳ）和－３９．５ｄＢｍ（４×２．５Ｇｂ／ｓ，ＮＲＺ２２３－１ＰＲＢＳ）．系统各信道误码率分别优于４×１０－１２～４×１０－１５．     

用于1．2μmCMOS70MS／sADC阵列中的一种10位5MS／s逐次逼近ADC单元

用于１．２μｍＣＭＯＳ７０ＭＳ／ｓＡＤＣ阵列中的一种１０位５ＭＳ／ｓ逐次逼近ＡＤＣ单元＝Ａ１０－ｂｉｔ５ＭＳ／ｓｓｕｃｃｅｓｓｉｖｅａｐｐｒｏｘｉｍａｔｉｏｎＡＤＣｃｅｌｌｕｓｅｄｉｎａ７０ＭＳ／ｓＡＤＣａｒｒａｙｉｎ１．２μｍＣＭＯＳ［刊，英］／Ｙ...     

大唐电信40×10Gbit/sDWDM设备再获应用

在日前启动的广州市重点建设项目———广州宽带网络首期工程建设中 ,大唐电信４０×１０Ｇｂｉｔ／ｓＤＷＤＭ技术和１０Ｇｂｂｉｔ／ｓＳＤＨ技术被应用于本次工程骨干内环的建设。大唐１６×１０Ｇｂｉｔ／ｓＤＷＤＭ设备具有丰富的业务接口 ,能实现各种速率的ＳＤＨ、ＰＤＨ、以太网、ＡＴＭ交换机及ＩＰ路由器 ;１０Ｇｂｉｔ／ｓ的ＯＴＵ波长变换单元具有强大的ＦＥＣ能力及先进的数字包封技术 ;整个系统对色散进行严格控制。由于整个波分复用系统采用模块化设计 ,系统仅通过增加复用器、解复用器模块便可实现１．６Ｔｂｉｔ／ｓ（１６…     

In0.53Ga0.47As表面钝化及降低界面态密度的方法

采用ＰＥＣＶＤ技术，以ＴＥＯＳ为源，对Ｉｎ０．５３Ｇａ０．４７Ａｓ材料进行表面钝化，研究了ＳｉＯ２／Ｉｎ０．５３Ｇａ０．４７Ａｓ的界面态，提出降低界面态密度的方法，使其降低到８．５×１０＾１０ｅＶ＾－１ｃｍ＾－２。     

128元长波碲镉汞焦平面器件

本文概要叙述了１２８元长波碲镉汞焦平面器件的原理及研制工艺；ＣＭＯＳ互连后测试结果：峰值Ｄλ＾＊＝３．４×１０＾１０ｃｍＨｚ＾１／２Ｗ＾－１，Ｒｖλ＝１．２×１０＾８Ｖ／Ｗ，利用１２８元长波碲镉汞焦平面器件研制成功的热像仪成像情况。     

频率合成技术在2×155 Mbit／s SDH微波通信系统中的应用

本文介绍了现代通信领域的新技术－－吞脉冲式锁相环频率合成器技术在我所研制的Ｍ２０００Ｄ系列２×１５５Ｍｂｉｔ／ｓ ＳＤＨ微波通信系统中的应用。通过对其工作原理的讨论，给出了采用吞脉冲式锁相环频率合成器方式设计的２×１５５Ｍｂｉｔ／ｓ ＳＤＨ微波通信系统收、发信锁相本振源的设计和测试结果。     

四极SIMS对AlxGa1—xAs中Si的定量分析

本讨论了用ＭＩＱ－１５６四极ＳＩＭＳ仪器对ＡｌｘＧａ１－ｘＡｓ中Ｓｉ进行定量分析的实验方法，考察了测量结果的重复性及ｘ变化时ＳｉＲＳＦ的变化规律，在ＩＭＳ－４ｆＳＩＭＳ仪器上进行了对比测试，用Ｃｓ＾＋源对＾２９Ｓｉ的原子检测了限达到了４×１０＾１５ｃｍ＾－３。     

高性能的24bit.8fs数字滤波器SM5842AP

高性能的２４ｂｉｔ·８ｆ＿ｓ数字滤波器ＳＭ５８４２ＡＰ前言现在，许多业务用机，测量仪器以及家用高级数字ＡＶ机都使用２０ｂｉｔ·８ｆｓ数字滤波器ＳＭ５８０３ＡＰ／ＡＰＴ．ＳＭ５８０３有１６ｂｉｔ源，在１６／１８ｂｉｔＤＡＣ成为主流的当时，输入１６／１８...     

光纤以太网及其应用

光纤以太网产品可以借助以太网设备采用以太网数据包格式实现ＷＡＮ通信业务 ,该技术可以适用于任何光传输网络———光纤直接传输、ＳＤＨ以及ＤＷＤＭ网络传输。目前 ,光纤以太网可以实现１０Ｍｂｉｔ／ｓ、１００Ｍｂｉｔ／ｓ以及１Ｇｂｉｔ／ｓ等标准以太网速度 ,而达到１０Ｇｂｉｔ／ｓ后它更将成为各种业务的亮点。迄今为止 ,基本接入端口速度为１０／１００Ｍｂｉｔ／ｓ ,而最终用户以１Ｍｂｉｔ／ｓ或１０Ｍｂｉｔ／ｓ为单位来使用网络。光纤以太网业务与其它宽带接入（例如ＤＳ３）相比更为经济高效 ,但到目前为止它的使用只限于办…     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first