HPI接口技术的研究与应用

文章主要介绍了TMS320C54x DSP通过自身HPI接口与PC进行通信的设计方案,实现了PC 实时读写DSP任意片内存储单元的内容。     

多通道图像处理采集卡的设计

针对图像数据采集系统中的实时图像处理、多通道接入及高速数据传输需求,提出了利用TI图像处理器TMS320DM642型DSP芯片完成图像数据的处理、DMA和PCI总线图像数据传输的实现方法,介绍了TMS320DM642型DSP的PCI接口特性,以及DSP在PCI主模式下控制并启动DMA数据传输,并给出了DMA数据传输系统的实现原理、工作流程、WINDOWS系统下的PCI设备驱动和应用程序的实现方法.     

面向视频安全与监控应用的DSP

针对视频安全监控应用推出的TMS320DM647与TMS320DM648两款全新达芬奇技术DSP基于TMS320c64x＋内核，为基于TMS320DM642的现有视频处理应用提供了无缝移植路径，在降低整体成本的同时实现性能双倍提升。     

LWIP在TMS320DM642平台的实现

TMS320DM642平台上实现TCP／IP通信,可为嵌入式多媒体系统的网络应用提供技术支持。分析TMS320DM642芯片功能和轻量级网络协议（LWIP）层次结构,通过LWIP的移植,实现TMS320DM642非网络开发者套件（NDK）解决方案的TCP／IP网络通信,实例验证了LWIP移植方法的有效性。     

TMS320DM642和TLV230AIC23B通信的接口设计

根据DSP芯片TMS320DM642的特点,搭建了音频编解码芯片TLV230AIC23B和DSP之间的串口通信的软硬件系统。通过对AIC23B和DSP芯片功能的了解,设计AIC23B和DSP之间的硬件电路的连接,设置了TLV230AIC23B和TMS320DM642的相关的寄存器,实现了TLV230AIC23B和TMS320DM642之间的通信,并给出了FC写入TLV230AIC23B和初始化MCASP的操作代码。这种接口设计具有广泛的通用性,可应用于各种相关的音频处理设备．进行音频信号的处理。     

TI达芬奇技术升级视频安全与监控应用

日前，德州仪器（TI）针对视频安全监控应用推出了TMS320DM647与TMS320DM648两款全新达芬奇（DaVinci）技术数字信号处理器（DSP）。这两款新品建立在TI最新TMS320C64×＋DSP内核基础上，为基于TMS320DM642的现有视频处理应用提供了无缝移植路径，在降低整体成本的同时实现性能双倍提升。[第一段]     

C54X DSP的HPI与PC机并口技术研究

本文介绍了TI TMS320C5402 DSP通过自身HPI(主程序接口)接口与PC机并口(EPP)进行连接的设计方案。该方案充分利用了DSP的HPI接口功能,实现了PC机实时读写DSP任意片内存储单元的内容,在高级语言下完成了对DSP应用系统的监控。     

远程医疗中的图像加密系统

介绍了一种基于TO公司的TMS320DM642 DSP的图像加密系统.该系统直接从医疗仪器(如CT、核磁共振等)中读取已生成的数字图像信号,通过网络接口将其输入到DSP处理模块,并使用图像加密算法对图像进行计算和变换.最后通过TMS320DM642独有的EMAC模块对数据进行传输,实现医学图像的远程传输.     

基于TMS320DM642实现网络通信功能的研究

本文对TMS320DM642芯片网络功能模块及其网络开发套件NDK进行了研究与分析,并以DM642开发板与PC之间的网络通信为例,分别介绍了PC端的WINSOCK编程和DSP端NDK开发的一般过程。     

德州仪器推出高性能TMS320DM64X^TM数字媒体开发套件

德州仪器推出高性能TMS320DM64x数字媒体开发套件 德州仪器(TI)推出一款综合TMS320DM64x数字媒体开发套件,该套件标配了基于高速XDS560 PCI的仿真器、600MHz TMS320DM642评估板、数字媒体版的强大Code Composer Studio櫦煽⒒肪骋约叭子τ萌砑褪涤贸绦颉?DMDK组合了业界功能最强大、最全面的媒体优化DSP工具,并包含了设计人员所需的全部功能,它的主要组件有:(1)DM642 EVM,它是一块PCI卡,采用600MHz DM642基于DSP的数字媒体处理器,具有32MB外部SDRAM、4MB闪存、组合视频输入/输出、S-视频输入/输出、VGA输…     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.