共查询到20条相似文献,搜索用时 15 毫秒
1.
Yasuhiro Sugimoto Masahiro Sekiya 《Analog Integrated Circuits and Signal Processing》1999,20(2):149-153
This paper describes an MOS current-mode sample-and-hold (S/H) circuit that potentially operates with a sub-1.5 V supply voltage, 20 MHz clock frequency, and less than 0.1% linearity. A newly developed voltage-to-current converter suppresses the voltage change at an input terminal and achieves low-voltage operation with superior linearity. Sample switches are differentially placed at the inputs of a differential amplifier so that the feed through errors from switches cancel out. The MOS current mode S/H circuit is designed and simulated using CMOS 0.6 m device parameters. Simulation results indicate that an operation with 20 MHz clock frequency, linearity error of less than 0.1%, and 1 MHz input from a 1.5 V power supply is achievable. 相似文献
2.
I. Grech J. Micallef C. J. Debono P. Malcovati F. Maloberti 《Analog Integrated Circuits and Signal Processing》2001,27(1-2):151-163
A second order switched capacitor sigma-delta modulator operating at a supplyvoltage of 1 V is presented. This low supply voltage restricts the gate overdrivevoltage available for switching transistors. The design relies on the elimination ofcritical switches by using a modified switched op amp for the integrator and novelswitched half-supply and reference voltage generators. The design has been carried outin a fully differential configuration in order to minimize errors arising from chargeinjection and clock-feedthrough effects. The converter has been implemented using aconventional 0.8 m double-poly double-metal CMOS process, having a nominalthreshold voltage of 0.75 V. Test results, showing more than 9 bits of resolutionwith an oversampling ratio of 64, are also presented. 相似文献
3.
Mohiuddin Hafiz Khondker Zakir Ahmed A.B.M. Harun-ur Rashid 《Microelectronics Journal》2011,42(5):648-660
A 0.8 V input, 84% duty cycle, variable frequency CMOS DC-DC step-up converter with integrated power switches has been presented in this paper. The converter has the properties of both the current mode and hysteric control mode operations. The inductor charging time of the topology is designed to be inversely proportional to the input voltage and as a result the inductor current disturbance dies out immediately. Hence, no external components and extra I/O pins are required for the compensation of the current loop. The step-up converter has been fabricated with a standard pseudo BiCMOS process. Special MOS device of threshold voltage 0.5 V and start-up circuitries enable the converter to start from a voltage as low as 0.8 V. The real time data show that the converter can boost 0.8 V to as high as 5 V, which makes it suitable for low voltage applications. The efficiency of the chip has been found over 75 % for the entire load range from 10 to 100 mA. 相似文献
4.
Daheng Yin Zunqiao Zhang Jianwen Li 《Analog Integrated Circuits and Signal Processing》1991,1(4):353-361
A simple integrated capacitance-to-frequency converter is presented. Its core is a switched-capacitor integrator. Under the control of a switch clock the converter produces a square-wave signal whose frequency depends on an external capacitor. It is insensitive to parasitic capacitance and not affected by the op amp offset voltage. Moreover, this converter has a linear capacitance-to-frequency transform characteristic. This experimental circuit has been implemented by a low voltage double-polysilicon 5-m NMOS technology. Since the circuit is cost-effective and power consumption is low (less than 10 mW), such a converter is suitable for many mesurement systems which use a capacitor as a sensor. For example, it can be used for atmospheric pressure measurement in a meteorological balloon which cannot be reclaimed after release. 相似文献
5.
A Single-Inductor Step-Up DC-DC Switching Converter With Bipolar Outputs for Active Matrix OLED Mobile Display Panels 总被引:2,自引:0,他引:2
《Solid-State Circuits, IEEE Journal of》2009,44(2):509-524
6.
This paper presents a DC-DC step-down converter, which can accommodate the range of power supply voltage from VDD to sub-2×VDD. By utilizing stacked power MOSFETs, a voltage level converter, a detector and a controller, the proposed design is realized by a typical 1P6M CMOS process without using any high voltage process to resolve gate-oxide reliability and leakage current problems. The core area of the proposed design is less than 0.184 mm2, while the power supply range is up to 5 V. Since the internal reference voltage is 1.0 V, it can increase the output regulation range. The proposed design attains very high conversion efficiency to prolong the life time of battery-based power supply. Therefore, it can be integrated in a SOC (system-on-chip) to provide multiple supply voltage sources. 相似文献
7.
《Power Electronics, IEEE Transactions on》2008,23(5):2387-2398
8.
《Very Large Scale Integration (VLSI) Systems, IEEE Transactions on》2008,16(9):1240-1243
9.
《Circuits and Systems II: Express Briefs, IEEE Transactions on》2009,56(2):152-156
10.
Beiranvand R. Rashidian B. Zolghadri M. R. Alavi S. M. H. 《Power Electronics, IEEE Transactions on》2010,25(1):197-208
11.
12.
《Power Electronics, IEEE Transactions on》2009,24(2):388-397
13.
S. V. Bulyarskiy A. V. Lakalin I. E. Abanin V. V. Amelichev V. V. Svetuhin 《Semiconductors》2017,51(1):66-72
The experimental results and calculations of the efficiency of the energy conversion of Ni-63 β-radiation sources to electricity using silicon p–i–n diodes are presented. All calculations are performed taking into account the energy distribution of β-electrons. An expression for the converter open-circuit voltage is derived taking into account the distribution of high-energy electrons in the space-charge region of the p–i–n diode. Ways of optimizing the converter parameters by improving the technology of diodes and optimizing the emitter active layer and i-region thicknesses of the semiconductor converter are shown. The distribution of the conversion losses to the source and radiation detector and the losses to high-energy electron entry into the semiconductor is calculated. Experimental values of the conversion efficiency of 0.4–0.7% are in good agreement with the calculated parameters. 相似文献
14.
《Circuits and Systems II: Express Briefs, IEEE Transactions on》2009,56(3):210-214
15.
《Circuits and Systems II: Express Briefs, IEEE Transactions on》2008,55(8):753-757
16.
In this paper, a new architecture for performing analog-to-digital conversion with the throughput of flash conversion, but with some relief from the high power and area requirements, is presented. The key element of this technique is the two-range comparator circuit. This new circuit compares the analog input with more than one reference voltage simultaneously, allowing for a large reduction in the total number of comparator circuits required. Simulation results are presented which show a performance increase of 20% in a converter implemented with the new comparator when compared to a conventional flash converter operated at the same power dissipation level. 相似文献
17.
This paper describes a 10 bit CMOS current-mode A/D converter with a current predictor and a modular current reference circuit. A current predictor and a modular current reference circuit are employed to reduce the number of comparator and reference current mirrors and consequently to decrease a power dissipation. The 10 bit current-mode A/D converter is fabricated by the 0.6 m n-well double poly/triple metal CMOS technology. The measurement results show the input current range of 16–528 A, DNL and INL of ±0.5 LSB and ±1.0 LSB, conversion rate of 10 M samples, and power dissipation of 94.4 mW with a power supply of 5 V. The effective chip area excluding the pads is 1.8 mm×2.4 mm. 相似文献
18.
《Solid-State Circuits, IEEE Journal of》2009,44(4):1067-1077
19.
Jun Liu Leicheng Chen Shiquan Fan Li Geng 《Analog Integrated Circuits and Signal Processing》2014,80(1):85-97
Dynamic voltage scaling (DVS) can effectively reduce energy consumption by dynamically varying the supply voltage of the system accordingly to the clock frequency. A new DVS-enabled DC–DC converter is presented in this paper. State trajectory is employed to analyze the transient features of PWM and PFM Buck converters. A novel transient enhancement circuit is designed to improve the transient response of the DVS-enabled Buck converter. To further expand the output voltage range of the converter, a current-starved voltage controlled delay line is proposed in the controller of DC–DC converter to obtain an ultra low voltage of 0.5 V. When the input voltage is 3.3 V, the output voltage of the converter can be dynamically regulated from 0.5 to 2.0 V. The output voltage tracking speed is less than 7.5 μs/V and the recovery speed is 33 μs/A for a load current step from 0.6 to 0.2 A at output voltage of 0.5 V. The chip area is 1.75 mm × 1.33 mm in a 0.18 μm standard CMOS process. 相似文献
20.
《Power Electronics, IEEE Transactions on》2008,23(6):2855-2866