共查询到20条相似文献，搜索用时 15 毫秒
1.
Anwar Jarndal Pouya Aflaki Renato Negra Ammar B. Kouki Fadhel M. Ghannouchi 《国际射频与微波计算机辅助工程杂志》2011,21(1):45-51
A large‐signal model for GaN HEMT transistor suitable for designing radio frequency power amplifiers (PAs) is presented along with its parameters extraction procedure. This model is relatively easy to construct and implement in CAD software since it requires only DC and S‐parameter measurements. The modeling procedure was applied to a 4‐W packaged GaN‐on‐Si HEMT, and the developed model is validated by comparing its small‐ and large‐signal simulation to measured data. The model has been employed for designing a switching‐mode inverse class‐F PA. Very good agreement between the amplifier simulation and measurement shows the validity of the model. © 2010 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2011. 相似文献
2.
WANG Xiaoliang WANG Cuimei HU Guoxin WANG Junxi RAN Junxue FANG Cebao LI Jianping ZENG Yiping LI Jinmin LIU Xinyu LIU Jian QIAN He 《中国科学F辑(英文版)》2005,48(6):808-814
AlGaN/GaN high electron mobility transistor (HEMT) structures were grown on 2 inch sapphire substrates by MOCVD, and 0.8-μm
gate length devices were fabricated and measured. It is shown by resistance mapping that the HEMT structures have an average
sheet resistance of approximately 380 Θ/sq with a uniformity of more than 96%. The 1-mm gate width devices using the materials
yielded a pulsed drain current of 784 mA/mm atV
gs=0.5 V andV
ds=7 V with an extrinsic transconductance of 200 mS/mm. A 20-GHz unity current gain cutoff frequency (f
T) and a 28-GHz maximum oscillation frequency (f
max) were obtained. The device with a 0.6-mm gate width yielded a total output power of 2.0 W/mm (power density of 3.33 W/mm)
with 41% power added efficiency (PAE) at 4 GHz. 相似文献
3.
WANG Xiaoliang WANG Cuimei HU Guoxin WANG Junxi RAN Junxue FANG Cebao LI Jianping ZENG Yiping LI Jinmin LIU Xinyu LIU Jian & QIAN He . Institute of Semiconductors Chinese Academy of Sciences Beijing China . Institute of Microelectronics Chinese Academy of sciences Beijing China 《中国科学F辑(英文版)》2005,(6)
GaN-based high electron mobility transistors (HEMTs) are promising devices for high power and high temperature applications[1―4]. Improvements over the years in material growth and device design have produced state-of-the-art AlGaN/GaN HEMTs with con- tinuous output power densities greater than 30 W/mm[3]. However, despite the impres- sive achievements, there exist some problems in developing the devices for application purposes, such as the current leakage through the GaN buffer layer[… 相似文献
4.
A new modeling methodology for gallium nitride (GaN) high‐electron‐mobility transistors (HEMTs) based on Bayesian inference theory, a core method of machine learning, is presented in this article. Gaussian distribution kernel functions are utilized for the Bayesian‐based modeling technique. A new small‐signal model of a GaN HEMT device is proposed based on combining a machine learning technique with a conventional equivalent circuit model topology. This new modeling approach takes advantage of machine learning methods while retaining the physical interpretation inherent in the equivalent circuit topology. The new small‐signal model is tested and validated in this article, and excellent agreement is obtained between the extracted model and the experimental data in the form of dc I–V curves and S‐parameters. This verification is carried out on an 8 × 125 μm GaN HEMT with a 0.25 μm gate feature size, over a wide range of operating conditions. The dc I–V curves from an artificial neural network (ANN) model are also provided and compared with the proposed new model, with the latter displaying a more accurate prediction benefiting, in particular, from the absence of overfitting that may be observed in the ANN‐derived I–V curves. 相似文献
5.
This article presents efficient parameters extraction procedure applied to GaN High electron mobility transistor (HEMT) on Si and SiC substrates. The method depends on combined technique of direct and optimization‐based to extract the elements of small‐signal equivalent circuit model (SSECM) for GaN‐on‐Si HEMT. The same model has been also applied to GaN‐on‐SiC substrate to evaluate the effect of the substrates on the model parameters. The quality of extraction was evaluated by means of S‐parameter fitting at pinch‐off and active bias conditions. 相似文献
6.
This article presents a detailed procedure to learn a nonlinear model and its derivatives to as many orders as desired with multilayer perceptron (MLP) neural networks. A modular neural network modeling a nonlinear function and its derivatives is introduced. The method has been used for the extraction of the large‐signal model of a power MESFET device, modeling the nonlinear relationship of drain‐source current Ids as well as gate and drain charge Qg and Qd with respect to intrinsic voltages Vgs and Vds over the whole operational bias region. The neural models have been implemented into a user‐defined nonlinear model of a commercial microwave simulator to predict output power performance as well as intermodulation distortion. The accuracy of the device model is verified by harmonic load‐pull measurements. This neural network approach has demonstrated to predict nonlinear behavior with enough accuracy even if based only on first‐order derivative information. © 2003 Wiley Periodicals, Inc. Int J RF and Microwave CAE 13: 276–284, 2003. 相似文献
7.
Anwar Jarndal 《国际射频与微波计算机辅助工程杂志》2014,24(3):389-400
In this article, small‐signal modeling approaches for GaN HEMTs on SiC and Si substrates have been developed. The main advantage of these approaches is their accuracy, reliability, and dependency on only cold S‐parameter measurements to extract the parasitic elements of the device. The proposed equivalent circuit model for GaN on Si HEMT considers extra effects due to parasitic conduction through substrate or buffer layers. S‐parameter measurements at different bias conditions in addition to physical based analysis have been used to validate the accuracy and reliability of the developed modeling methods. © 2013 Wiley Periodicals, Inc. Int J RF and Microwave CAE 24:389–400, 2014. 相似文献
8.
Behavioral models for microwave devices from time domain large‐signal measurements are developed. For the presented examples, the model is defined by representing the terminal currents as a function of the terminal voltages and their derivatives. When using these models as building blocks of higher level designs, the simulation speed is significantly improved. © 2003 Wiley Periodicals, Inc. Int J RF and Microwave CAE 13: 54–61, 2003. 相似文献
9.
Anwar Jarndal 《国际射频与微波计算机辅助工程杂志》2019,29(9)
This article presents an artificial neural network (ANN) approaches for small‐ and large‐signal modeling of active devices. The small‐signal characteristics were modeled by S‐parameters based feedforward NN models. The models have been implemented to simulate the bias, frequency and temperature dependence of measured S‐parameters. Feedback NN based large‐signal model was developed and implemented to simulate the drain current and its inherent thermal effect due to self‐heating and ambient temperature. Both small‐ and large‐signal models have been validated by measurements for 100‐μm and 1‐mm GaN high electron mobility transistors and very good agreement was obtained. 相似文献
10.
Arijit Majumdar Soumyo Chatterjee Sulagna Bose Sayan Chatterjee Sheli S. Chaudhari Dipak R. Poddar 《国际射频与微波计算机辅助工程杂志》2019,29(6)
In this article differential evolution based method of small signal modeling of GAN HEMT has been investigated. The method uses a unique search space exploration strategy to obtain optimized values of intrinsic and extrinsic elements pertaining to compact small signal model from extracted equivalent circuit elements and measured S‐parameter data. Effectiveness of the method has been illustrated by comparing the measured S‐parameter data of a 4 × 0.1 × 75 μm2 GaN/SiC HEMT in the frequency range of 1 to 30 GHz wherein modeled and measured data are in good agreement. 相似文献
11.
In this contribution an analytical approach to the design of high‐isolation microwave transmission line‐resonated switches is presented. Simulated and measured performance of a GaN HEMT single‐FET switch cell topology and the one of a complete SPDT using the proposed approach are presented to demonstrate the approach feasibility and effectiveness. The resulting SPDT, operating at X Band, is featured by 1 dB insertion loss, isolation better than 37 dB all over the operating bandwidth and a power handling capability higher than 39 dBm. © 2010 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2010. 相似文献
12.
The harmonic spur characteristics of a hybrid integrated S‐band power amplifier (PA), consisting of both stages of LDMOSFET and AlGaN/GaN HEMT, are studied at different temperatures. The PA offers a peak output power of 50 dBm (100 W) with power added efficiency higher than 50%, and adjacent channel power ratio performance is less than ?30 dBc. A temperature test chamber is employed for measuring the harmonic spur of PA from 233 to 393 K, and its linear response to temperature is captured at high output power level. 相似文献
13.
Lin‐Sheng Liu 《国际射频与微波计算机辅助工程杂志》2011,21(3):343-352
A complete empirical large‐signal model for the GaAs‐ and GaN‐based HEMTs is presented. Three generalized drain current I–V models characterized by the multi‐bias Pulsed I–V measurements are presented along with their dependence on temperature and quiescent bias state. The new I–V equations dedicated for different modeling cases are kept accurate enough to the higher‐order derivatives of drain‐current. Besides, an improved charge‐conservative gate charge Q–V formulation is proposed to extract and model the nonlinear gate capacitances. The composite nonlinear model is shown to accurately predict the S‐parameters, large‐signal power performances as well as the two‐tone intermodulation distortion products for various types of GaAs and GaN HEMTs. © 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE , 2011. 相似文献
14.
In this article, a new extraction technique is proposed to extract the small‐signal parameters of gallium nitride (GaN) high electron mobility transistors (HEMTs) on three different substrates namely, Si, SiC, and Diamond. This extraction technique used a single small‐signal circuit model to efficiently describe the physical and electrical properties of GaN on different substrates. This technique takes into account any asymmetry between the gate‐source and gate‐drain capacitances on the asymmetrical GaN HEMT structure, charge‐trapping effects, passivation layer inclusion, as well as leakage currents associated with the nucleation layer between the GaN buffer layer and the different substrates. The extracted values were then optimized using the grey wolf optimizer. The proposed technique was demonstrated through a close agreement between simulated and measured S‐parameters. 相似文献
15.
给出了一种X波段GaN基功率放大器的设计方法。研究了相关的偏置电路、匹配网络以及稳定性网络,实现了6个GaNHEMT器件的功率合成。该方法在偏置VGS=-3.2V,VDS=6V,IDS=200mA,频率为8GHz时,可以仿真得到的放大器增益为20.380dB,饱和输出功率可以达到35.268dBm(约为3.36W)。 相似文献
16.
This article presents the design and fabrication of a 6 W X‐band hybrid Class‐J power amplifier (PA) based on a bare die GaN on SiC HEMT by accurate implementing the transistor nonlinear capacitor effects. The transistor input capacitor is precisely modelled and its nonlinearity effects on Class‐J performance is studied for the first time. It is shown that the harmonic generation property of the nonlinear input capacitor, especially at the second harmonic, can be of benefit to shape the transistor gate voltage as a quasi‐half wave sinusoidal waveform and consequently, it can improve the power added efficiency (PAE). A complete 3D thermal model of the power transistor is developed using ANSYS software and it is calibrated based on the thermal measured data. The PA achieves 13 dB average power gain over the frequency range of 8.8‐9.6 GHz. The drain efficiency and PAE are about 67% and 58% at 9.2 GHz, respectively. 相似文献
17.
This article reports a comparative study of two artificial neural network structures and associated variants used to describe and predict the behavior of 2 × 200 μm2 GaN high electron mobility transistors (HEMTs), utilizing radiofrequency characterization. Two architectures namely multilayer perceptron and cascade feedforward, have been investigated in this work to develop the behavioral model. A study is conducted utilizing the two architectures, all trained using Levenberg‐Marquardt, in terms of accuracy, convergence rate, and generalization capability to develop the behavioral model of GaN HEMT. However, to ensure the robustness of the model, accuracy, convergence rate, time elapsed, and generalization capability of the proposed model is also tested under couple of training algorithms, activation functions, number of hidden layers and neuron embedded inside it, methods for initialization of weights and bias and certain other vital parameters playing vital role in influencing the model accuracy and effectiveness. An excellent agreement found between measured S‐parameters and the proposed model proves the effectiveness of the proposed approach and excellent prediction ability for a sweeping multibias set and broad frequency range of 1 to 18 GHz. Moreover, a very good generalization capability is also recorded under variation of crucial parameters of GaN HEMT‐based neural model. 相似文献
18.
提出一种基于人工神经网络的城市交通信号的自校正预测控制方法.充分考虑相邻交叉路口之间交通流的强耦合性,在此基础上建立关于队长的交通模型;其中,受控路口下一周期到达的车辆数用人工神经网络(ANN)来预测;通过该ANN还可获得确定最佳周期长度所需要的交通参量,因此还可预测下一周期的长度;上述预测值均用实测信息进行反馈校正,在此基础上即可给出带约束的预测控制算法,从而确定下一周期的控制策略.仿真实例表明该方法具有较好的控制效果. 相似文献
19.
In this article, a large‐signal modeling approach based on the combination of equivalent circuit and neuro‐space mapping modeling techniques is proposed for MOSFET. In order to account for the dispersion effects, two neuro‐space (S) mapping based models are used to model the drain current at DC and RF conditions, respectively. Corresponding training process in our approach is also presented. Good agreement is obtained between the model and data of the DC, S parameter, and harmonic performance for a 0.13 μm channel length, 5 μm channel width per finger and 20 fingers MOSFET over a wide range of bias points, demonstrating the proposed model is valid for DC, small‐signal and nonlinear operation. Comparison of DC, S‐parameter, and harmonic performance between proposed model and empirical model further reveals the better accuracy of the proposed model. © 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE , 2011. 相似文献
20.
Lakshman Mareddy Mohammad Almalkawi Srinivasa Vemuru Mohamed Bakr Vijay Devabhaktuni 《国际射频与微波计算机辅助工程杂志》2013,23(5):559-569
This article proposes a new trust region‐based optimization technique for Radio Frequency (RF)/microwave devices. The proposed approach is apt for modeling scenarios, where standard ANN multilayer perceptron (MLP) and Prior Knowledge Input (PKI) models fail to deliver a satisfactory model. This approach feeds output of standard ANN model as knowledge input to PKI model. The ANN model and the PKI model form a symbiotic pair to yield accurate results. In this paper, the dogleg routine is exploited in the process of optimization to obtain valid trust region steps. The proposed method is compared with sensitivity technique via several RF/microwave components. © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2013. 相似文献