Temporal and Remote Tuning of Piezophotonic‐Effect‐Induced Luminescence and Color Gamut via Modulating Magnetic Field

Light‐emitting materials have been extensively investigated because of their widespread applications in solid‐state lighting, displays, sensors, and bioimaging. In these applications, it is highly desirable to achieve tunable luminescence in terms of luminescent intensity and wavelength. Here, a convenient physical approach of temporal and remote tuning of light‐emitting wavelength and color is demonstrated, which is greatly different from conventional methods. It is shown that by modulating the frequency of magnetic‐field excitation at room temperature, luminescence from the flexible composites of ZnS:Al, Cu phosphors induced by the piezophotonic effect can be tuned in real time and in situ. The mechanistic investigation suggests that the observed tunable piezophotonic emission is ascribed to the tilting band structure of the ZnS phosphor induced by magnetostrictive strain under a high frequency of magnetic‐field excitation. Furthermore, some proof‐of concept devices, including red–green–blue full‐color displays and tunable white‐light sources are demonstrated simply by frequency modulation. A new understanding of the fundamentals of both luminescence and magnetic–optics coupling is thus provided, while offering opportunities in magnetic–optical sensing, piezophotonics, energy harvesting, novel light sources, and displays.     

Mixed Lead–Tin Halide Perovskites for Efficient and Wavelength‐Tunable Near‐Infrared Light‐Emitting Diodes

Near‐infrared (NIR) light‐emitting diodes (LEDs), with emission wavelengths between 800 and 950 nm, are useful for various applications, e.g., night‐vision devices, optical communication, and medical treatments. Yet, devices using thin film materials like organic semiconductors and lead based colloidal quantum dots face certain fundamental challenges that limit the improvement of external quantum efficiency (EQE), making the search of alternative NIR emitters important for the community. In this work, efficient NIR LEDs with tunable emission from 850 to 950 nm, using lead–tin (Pb‐Sn) halide perovskite as emitters are demonstrated. The best performing device exhibits an EQE of 5.0% with a peak emission wavelength of 917 nm, a turn‐on voltage of 1.65 V, and a radiance of 2.7 W Sr^?1 m^?2 when driven at 4.5 V. The emission spectra of mixed Pb‐Sn perovskites are tuned either by changing the Pb:Sn ratio or by incorporating bromide, and notably exhibit no phase separation during device operation. The work demonstrates that mixed Pb‐Sn perovskites are promising next generation NIR emitters.     

Progress in Piezo‐Phototronic‐Effect‐Enhanced Light‐Emitting Diodes and Pressure Imaging

Wurtzite materials exhibit both semiconductor and piezoelectric properties under strains due to the non‐central symmetric crystal structures. The three‐way coupling of semiconductor properties, piezoelectric polarization and optical excitation in ZnO, GaN, CdS and other piezoelectric semiconductors leads to the emerging field of piezo‐phototronics. This effect can efficiently manipulate the emission intensity of light‐emitting diodes (LEDs) by utilizing the piezo‐polarization charges created at the junction upon straining to modulate the energy band diagrams and the optoelectronic processes, such as generation, separation, recombination and/or transport of charge carriers. Starting from fundamental physics principles, recent progress in piezo‐phototronic‐effect‐enhanced LEDs is reviewed; following their development from single‐nanowire pressure‐sensitive devices to high‐resolution array matrices for pressure‐distribution mapping applications. The piezo‐phototronic effect provides a promising method to enhance the light emission of LEDs based on piezoelectric semiconductors through applying static strains, and may find perspective applications in various optoelectronic devices and integrated systems.     

Gallium Complexes in Three‐Layer Organic Electroluminescent Devices

Organic light‐emitting diodes fabricated by subsequently spin‐coating two layers—a hole‐transporting followed by a metal chelate emissive layer—onto poly(3,4‐ethylenedioxythiophene)/poly(styrenesulfonate) are presented for the first time. The electron–hole recombination occurs in a layer consisting of Ga complexes (see Figure), which exhibit high fluorescence quantum yields, and their emission spectra are blue‐shifted relative to that of tris(8‐hydroxyquinoline) aluminum. By doping this spin‐coated emission layer with fluorescent emitters the emission band can be shifted within the visible spectral range.     

Light‐Emitting Diodes with Cu‐Doped Colloidal Quantum Wells: From Ultrapure Green,Tunable Dual‐Emission to White Light

Copper‐doped colloidal quantum wells (Cu‐CQWs) are considered a new class of optoelectronic materials. To date, the electroluminescence (EL) property of Cu‐CQWs has not been revealed. Additionally, it is desirable to achieve ultrapure green, tunable dual‐emission and white light to satisfy the various requirement of display and lighting applications. Herein, light‐emitting diodes (LEDs) based on colloidal Cu‐CQWs are demonstrated. For the 0% Cu‐doped concentration, the LED exhibits Commission Internationale de L'Eclairage 1931 coordinates of (0.103, 0.797) with a narrow EL full‐wavelength at half‐maximum of 12 nm. For the 0.5% Cu‐doped concentration, a dual‐emission LED is realized. Remarkably, the dual emission can be tuned by manipulating the device engineering. Furthermore, at a high doping concentration of 2.4%, a white LED based on CQWs is developed. With the management of doping concentrations, the color tuning (green, dual‐emission to white) is shown. The findings not only show that LEDs with CQWs can exhibit polychromatic emission but also unlock a new direction to develop LEDs by exploiting 2D impurity‐doped CQWs that can be further extended to the application of other impurities (e.g., Mn, Ag).     

Electrically Pumped White‐Light‐Emitting Diodes Based on Histidine‐Doped MoS2 Quantum Dots

MoS₂ quantum dots (QDs)‐based white‐light‐emitting diodes (QD‐WLEDs) are designed, fabricated, and demonstrated. The highly luminescent, histidine‐doped MoS₂ QDs synthesized by microwave induced fragmentation of 2D MoS₂ nanoflakes possess a wide distribution of available electronic states as inferred from the pronounced excitation‐wavelength‐dependent emission properties. Notably, the histidine‐doped MoS₂ QDs show a very strong emission intensity, which exceeds seven times of magnitude larger than that of pristine MoS₂ QDs. The strongly enhanced emission is mainly attributed to nitrogen acceptor bound excitons and passivation of defects by histidine‐doping, which can enhance the radiative recombination drastically. The enabled electroluminescence (EL) spectra of the QD‐WLEDs with the main peak around 500 nm are found to be consistent with the photoluminescence spectra of the histidine‐doped MoS₂ QDs. The enhanced intensity of EL spectra with the current increase shows the stability of histidine‐doped MoS₂ based QD‐WLEDs. The typical EL spectrum of the novel QD‐WLEDs has a Commission Internationale de l'Eclairage chromaticity coordinate of (0.30, 0.36) exhibiting an intrinsic broadband white‐light emission. The unprecedented and low‐toxicity QD‐WLEDs based on a single light‐emitting material can serve as an excellent alternative for using transition metal dichalcogenides QDs as next generation optoelectronic devices.     

Designable Luminescence with Quantum Dot–Silver Plasmon Coupler

We explore a strongly interacting QDs/Ag plasmonic coupling structure that enables multiple approaches to manipulate light emission from QDs. Group II–VI semiconductor QDs with unique surface states (SSs) impressively modify the plasmonic character of the contiguous Ag nanostructures whereby the localized plasmons (LPs) in the Ag nanostructures can effectively extract the non‐radiative SSs of the QDs to radiatively emit via SS–LP resonance. The SS–LP coupling is demonstrated to be readily tunable through surface‐state engineering both during QD synthesis and in the post‐synthesis stage. The combination of surface‐state engineering and band‐tailoring engineering allows us to precisely control the luminescence color of the QDs and enables the realization of white‐light emission with single‐size QDs. Being a versatile metal, the Ag in our optical device functions in multiple ways: as a support for the LPs, for optical reflection, and for electrical conduction. Two application examples of the QDs/Ag plasmon coupler for optical devices are given, an Ag microcavity + plasmon‐coupling structure and a new QD light‐emitting diode. The new QDs/Ag plasmon coupler opens exciting possibilities in developing novel light sources and biomarker detectors.     

White‐Emissive Self‐Assembled Organic Microcrystals

Organic semiconductor micro‐/nanocrystals with regular shapes have been demonstrated for many applications, such as organic field‐effect transistors, organic waveguide devices, organic solid‐state lasers, and therefore are inherently ideal building blocks for the key circuits in the next generation of miniaturized optoelectronics. In the study, blue‐emissive organic molecules of 1,4‐bis(2‐methylstyryl)benzene (o‐MSB) can assemble into rectangular microcrystals at a large scale via the room‐temperature solution‐exchange method. Because of the Förster resonance energy transfer, the energy of the absorbed photons by the host matrix organic molecules of o‐MSB can directly transfer to the dopant organic molecules of tetracene or 1,2:8,9‐dibenzopentacene (DBP), which then emit visible photons in different colors from blue to green, and to yellow. More impressively, by modulating the doping molar ratios of DBP to o‐MSB, bright white‐emissive organic microcrystals with well‐preserved rectangular morphology can be successfully achieved with a low doping ratio of 1.5%. These self‐assembled organic semiconductor microcrystals with multicolor emissions can be the white‐light sources for the integrated optical circuits at micro‐/nanoscale.     

Tunable Dual‐Emission in Monodispersed Sb3+/Mn2+ Codoped Cs2NaInCl6 Perovskite Nanocrystals through an Energy Transfer Process

Double halide perovskites are a class of promising semiconductors applied in photocatalysis, photovoltaic devices, and emitters to replace lead halide perovskites, owing to their nontoxicity and chemical stability. However, most double perovskites always exhibit low photoluminescence quantum efficiency (PLQE) due to the indirect bandgap structure or parity‐forbidden transition problem, limiting their further applications. Herein, the self‐trapped excitons emission of Cs₂NaInCl₆ by Sb‐doping, showing a blue emission with high PLQE of 84%, is improved. Further, Sb/Mn codoped Cs₂NaInCl₆ nanocrystals are successfully synthesized by the hot‐injection method, showing a tunable dual‐emission covering the white‐light spectrum. The studies of PL properties and dynamics reveal that an energy transfer process can occur between the self‐trapped excitons and dopants (Mn²⁺). The work provides a new perspective to design novel lead‐free double perovskites for realizing a unique white‐light emission.     

Large‐Scale Horizontally Aligned ZnO Microrod Arrays with Controlled Orientation,Periodic Distribution as Building Blocks for Chip‐in Piezo‐Phototronic LEDs

A novel method of fabricating large‐scale horizontally aligned ZnO microrod arrays with controlled orientation and periodic distribution via combing technology is introduced. Horizontally aligned ZnO microrod arrays with uniform orientation and periodic distribution can be realized based on the conventional bottom‐up method prepared vertically aligned ZnO microrod matrix via the combing method. When the combing parameters are changed, the orientation of horizontally aligned ZnO microrod arrays can be adjusted (θ = 90° or 45°) in a plane and a misalignment angle of the microrods (0.3° to 2.3°) with low‐growth density can be obtained. To explore the potential applications based on the vertically and horizontally aligned ZnO microrods on p‐GaN layer, piezo‐phototronic devices such as heterojunction LEDs are built. Electroluminescence (EL) emission patterns can be adjusted for the vertically and horizontally aligned ZnO microrods/p‐GaN heterojunction LEDs by applying forward bias. Moreover, the emission color from UV‐blue to yellow‐green can be tuned by investigating the piezoelectric properties of the materials. The EL emission mechanisms of the LEDs are discussed in terms of band diagrams of the heterojunctions and carrier recombination processes.     

Near‐Unity Emitting Copper‐Doped Colloidal Semiconductor Quantum Wells for Luminescent Solar Concentrators

Doping of bulk semiconductors has revealed widespread success in optoelectronic applications. In the past few decades, substantial effort has been engaged for doping at the nanoscale. Recently, doped colloidal quantum dots (CQDs) have been demonstrated to be promising materials for luminescent solar concentrators (LSCs) as they can be engineered for providing highly tunable and Stokes‐shifted emission in the solar spectrum. However, existing doped CQDs that are aimed for full solar spectrum LSCs suffer from moderately low quantum efficiency, intrinsically small absorption cross‐section, and gradually increasing absorption profiles coinciding with the emission spectrum, which together fundamentally limit their effective usage. Here, the authors show the first account of copper doping into atomically flat colloidal quantum wells (CQWs). In addition to Stokes‐shifted and tunable dopant‐induced photoluminescence emission, the copper doping into CQWs enables near‐unity quantum efficiencies (up to ≈97%), accompanied by substantially high absorption cross‐section and inherently step‐like absorption profile, compared to those of the doped CQDs. Based on these exceptional properties, the authors have demonstrated by both experimental analysis and numerical modeling that these newly synthesized doped CQWs are excellent candidates for LSCs. These findings may open new directions for deployment of doped CQWs in LSCs for advanced solar light harvesting technologies.     

A Colloidal‐Quantum‐Dot‐Based Self‐Charging System via the Near‐Infrared Band

A novel self‐charging platform is proposed using colloidal‐quantum‐dot (CQD) photovoltaics (PVs) via the near‐infrared (NIR) band for low‐power electronics. Low‐bandgap CQDs can convert invisible NIR light sources to electrical energy more efficiently than wider spectra because of reduced thermalization loss. This energy‐conversion strategy via NIR photons ensures an enhanced photostability of the CQD devices. Furthermore, the NIR wireless charging system can be concealed using various colored and NIR‐transparent fabric or films, providing aesthetic freedom. Finally, an NIR‐driven wireless charging system is demonstrated for a wearable healthcare bracelet by integrating a CQD PVs receiver with a flexible lithium‐ion battery and entirely embedding them into a flexible strap, enabling permanent self‐charging without detachment.     

Fabrication and Doping Methods for Silicon Nano‐ and Micropillar Arrays for Solar‐Cell Applications: A Review

Silicon is one of the main components of commercial solar cells and is used in many other solar‐light‐harvesting devices. The overall efficiency of these devices can be increased by the use of structured surfaces that contain nanometer‐ to micrometer‐sized pillars with radial p/n junctions. High densities of such structures greatly enhance the light‐absorbing properties of the device, whereas the 3D p/n junction geometry shortens the diffusion length of minority carriers and diminishes recombination. Due to the vast silicon nano‐ and microfabrication toolbox that exists nowadays, many versatile methods for the preparation of such highly structured samples are available. Furthermore, the formation of p/n junctions on structured surfaces is possible by a variety of doping techniques, in large part transferred from microelectronic circuit technology. The right choice of doping method, to achieve good control of junction depth and doping level, can contribute to an improvement of the overall efficiency that can be obtained in devices for energy applications. A review of the state‐of‐the‐art of the fabrication and doping of silicon micro and nanopillars is presented here, as well as of the analysis of the properties and geometry of thus‐formed 3D‐structured p/n junctions.     

Inkjet Printed Bilayer Light‐Emitting Electrochemical Cells for Display and Lighting Applications

A new bilayer light‐emitting electrochemical cell (LEC) device, which allows well‐defined patterned light emission through an easily adjustable, mask‐free, and additive fabrication process, is reported. The bilayer stack comprises an inkjet‐printed lattice of micrometer‐sized electrolyte droplets, in a “filled” or “patterned” lattice configuration. On top of this, a thin layer of light‐emitting compound is deposited from solution. The light emission is demonstrated to originate from regions proximate to the interfaces between the inkjetted electrolyte, the light‐emitting compound, and one electrode, where bipolar electron/hole injection and electrochemical doping are facilitated by ion motion. By employing KCF₃SO₃ in poly(ethylene glycol) as the electrolyte, Super Yellow as the light‐emitting compound, and two air‐stabile electrodes, it is possible to realize filled lattice devices that feature uniform yellow–green light emission to the naked eye, and patterned lattice devices that deliver well‐defined and high‐contrast static messages with a pixel density of 170 PPI.     

Controllable Growth of Aligned Monocrystalline CsPbBr3 Microwire Arrays for Piezoelectric‐Induced Dynamic Modulation of Single‐Mode Lasing

CsPbBr₃ shows great potential in laser applications due to its superior optoelectronic characteristics. The growth of CsPbBr₃ wire arrays with well‐controlled sizes and locations is beneficial for cost‐effective and largely scalable integration into on‐chip devices. Besides, dynamic modulation of perovskite lasers is vital for practical applications. Here, monocrystalline CsPbBr₃ microwire (MW) arrays with tunable widths, lengths, and locations are successfully synthesized. These MWs could serve as high‐quality whispering‐gallery‐mode lasers with high quality factors (>1500), low thresholds (<3 µJ cm^?2), and long stability (>2 h). An increase of the width results in an increase of the laser quality and the resonant mode number. The dynamic modulation of lasing modes is achieved by a piezoelectric polarization‐induced refractive index change. Single‐mode lasing can be obtained by applying strain to CsPbBr₃ MWs with widths between 2.3 and 3.5 µm, and the mode positions can be modulated dynamically up to ≈9 nm by changing the applied strain. Piezoelectric‐induced dynamic modulation of single‐mode lasing is convenient and repeatable. This method opens new horizons in understanding and utilizing the piezoelectric properties of lead halide perovskites in lasing applications and shows potential in other applications, such as on‐chip strain sensing.     

Light‐Driven Chiral Molecular Switches or Motors in Liquid Crystals

The ability to tune molecular self‐organization with an external stimulus is a main driving force in the bottom‐up nanofabrication of molecular devices. Light‐driven chiral molecular switches or motors in liquid crystals that are capable of self‐organizing into optically tunable helical superstructures undoubtedly represent a striking example, owing to their unique property of selective light reflection and which may lead to applications in the future. In this review, we focus on different classes of light‐driven chiral molecular switches or motors in liquid crystal media for the induction and manipulation of photoresponsive cholesteric liquid crystal systems and their consequent applications. Moreover, the change of helical twisting powers of chiral dopants and their capability of helix inversion in the induced cholesteric phases are highlighted and discussed in the light of their molecular geometric changes.     

Optically Rewritable Transparent Liquid Crystal Displays Enabled by Light‐Driven Chiral Fluorescent Molecular Switches

Functional soft materials exhibiting distinct functionalities in response to a specific stimulus are highly desirable towards the fabrication of advanced devices with superior dynamic performances. Herein, two novel light‐driven chiral fluorescent molecular switches have been designed and synthesized that are able to exhibit unprecedented reversible Z/E photoisomerization behavior along with tunable fluorescence intensity in both isotropic and anisotropic media. Cholesteric liquid crystals fabricated using these new fluorescent molecular switches as chiral dopants exhibit reversible reflection color tuning spanning the visible and infrared region of the spectrum. Transparent display devices have been fabricated using both low chirality and high chirality cholesteric films that operate either exclusively in fluorescent mode or in both fluorescent and reflection mode, respectively. The dual mode display device employing short pitch cholesteric film is able to function on demand under all ambient light conditions including daylight and darkness with fast response and high resolution. Moreover, the proof‐of‐concept for a “remote‐writing board” using cholesteric films containing one of the light‐driven chiral fluorescent molecular switches with ease of fabrication and operation is disclosed herein. Such optically rewritable transparent display devices enabled by light‐driven chiral fluorescent molecular switches pave a new way for developing novel display technology under different lighting conditions.     

Lead Halide Post‐Perovskite‐Type Chains for High‐Efficiency White‐Light Emission

Hybrid metal halides containing perovskite layers have recently shown great potential for applications in solar cells and light‐emitting diodes. Such compounds exhibit quantum confinement effects leading to tunable optical and electronic properties. Thus, broadband white‐light emission has been observed from diverse metal halides and, owing to high color rendering index, high thermal stability, and low‐temperature solution processability, these materials have attracted interest for application in solid‐state lighting. However, the reported quantum yields for white photoluminescence (PLQY) remain low (i.e., in the range 0.5–9%) and no approach has shown to successfully increase the intensity of this emission. Here, it is demonstrated that the quantum efficiencies of hybrid metal halides can be greatly enhanced if they contain a polymorph of the [PbX₄]^2? perovskite‐type layers: the [PbX₄]^2? post‐perovskite‐type chains showing a PLQY of 45%. Different piperazines lead to a hybrid lead halide with either perovskite layers or post‐perovskite chains influencing strongly the presence of self‐trapped states for excitons. It is anticipated that this family of hybrid lead halide materials could enhance all the properties requiring the stabilization of trapped excitons.     

Addressable and Color‐Tunable Piezophotonic Light‐Emitting Stripes

Piezophotonic light‐emitting devices have great potential for future microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS) due to the added functionality provided by the electromechanical transduction coupled with the ability of light emission. Piezophotonic light‐emitting source based on Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ (PMN–PT) bulk is severely restricted by many challenges, such as high voltage burden, low integration density, and micromanufacturing complexity. Developing chip‐integrated devices or incorporating such photonic components onto a Si platform is highly sought after in this field. In this work, the authors overcome the abovementioned problems by introducing single‐crystal PMN–PT thin films on Si as central active elements. Taking advantage of mature microfabrication techniques, arrays of PMN–PT actuators with small footprints and low operation voltages have been implemented. Each actuator can be individually addressed, generating local deformation to trigger piezophotonic luminescence from ZnS:Mn thin films. Moreover, the authors have realized continuous and reversible color manipulation of piezophotonic luminescence on a bilayer film of ZnS:Cu,Al/ZnS:Mn. The color tunability promises an extra degree of freedom and distinctly suggests its great potential in developing a more compact and colorful piezophotonic light sources and displays related applications together with the “single pixel” addressability.     

Efficient Self‐Driven Photodetectors Featuring a Mixed‐Dimensional van der Waals Heterojunction Formed from a CdS Nanowire and a MoTe2 Flake

Heterojunctions formed from low‐dimensional materials can result in photovoltaic and photodetection devices displaying exceptional physical properties and excellent performance. Herein, a mixed‐dimensional van der Waals (vdW) heterojunction comprising a 1D n‐type Ga‐doped CdS nanowire and a 2D p‐type MoTe₂ flake is demonstrated; the corresponding photovoltaic device exhibits an outstanding conversion efficiency of 15.01% under illumination with white light at 650 µW cm^?2. A potential difference of 80 meV measured, using Kelvin probe force microscopy, at the CdS–MoTe₂ interface confirms the separation and accumulation of photoexcited carriers upon illumination. Moreover, the photodetection characteristics of the vdW heterojunction device at zero bias reveal a rapid response time (<50 ms) and a photoresponsivity that are linearly proportional to the power density of the light. Interestingly, the response of the vdW heterojunction device is negligible when illuminated at 580 nm; this exceptional behavior is presumably due to the rapid rate of recombination of the photoexcited carriers of MoTe₂. Such mixed‐dimensional vdW heterojunctions appear to be novel design elements for efficient photovoltaic and self‐driven photodetection devices.