还原氧化钽制备钽粉工艺研究进展

评述了几种由氧化钽还原制取钽粉的新工艺。并阐述了不同方法的工艺原理、特点和产品特性。钠还原法反应时间短,还原温度范围广,能过得到高纯度高比表面的钽粉。FFC法具有工艺简单,污染小,成本低的特点,可以用来制备电容器级粉末。SOM法电解速度快,具有很好的发展前景。采用镁蒸汽还原能够得到性能好的钽粉,但是还原时间长,还原装置复杂。     

表面活性剂对Ti/IrO2+Ta2O5阳极性能的影响

采用热分解法和Pechini法制备了Ti/IrO2+Ta2O5阳极,通过SEM、极化曲线、循环伏安、电化学阻抗谱及强化电解寿命试验等测试手段,研究表面活性剂对Ti/IrO2+Ta2O5阳极微观结构和电催化性能的影响。结果表明,加入适量的表面活性剂十二烷基硫酸钠(SDS)可以明显改善涂液的涂刷性能;与热分解法相比,阳极表面呈现较多的龟裂纹,而且裂纹变宽加深,其电化学活性表面积增大,析氧电催化活性提高,但稳定性降低。     

氧离子束流密度对Ta2O5薄膜的影响

利用氧离子辅助电子束蒸发沉积Ta2O5薄膜,在dd定氧离子能量的条件下研究了氧离子束流密度对Ta2O5薄膜的微观结构、化学计量比和漏电流密度的影响.利用原子力显微镜和X射线衍射仪对Ta2O5薄膜微观结构进行表征研究,发现随着离子束流密度增大,沉积的Ta2O5薄膜致密性提高,粗糙度下降,但薄膜一直保持非晶态;同时能谱仪测试的结果表明,薄膜中O/Ta比例逐渐提高,直至呈现富氧状态.测量了不同薄膜样品的漏电流密度和击穿场强,发现随着离子束流密度增大,薄膜漏电流密度显著降低,击穿场强提高.总之,提高氧离子束流密度能够明显改善Ta2O5薄膜的微观结构和电学性能.     

化学气相沉积法制备Ta2O5薄膜的研究进展

Ta2O5是重要的介电材料和光波导材料.从前驱体的选择方面综述了化学气相沉积法制备Ta2O5薄膜的研究进展,说明了五卤化钽和Ta金属有机化合物对CVD过程的影响,对这两类前驱体的优缺点进行了比较和评述,讨论了Ta2O5的生成机理,并对其发展方向作了简要的展望.     

Ti基IrO2+Ta2O5阳极的电化学特性

测量了Ti基IrO2 Ta2O5混合氧化物涂层的电化学阻抗谱（EIS），研究了Ti基IrO2 Ta2O5混合氧化物涂层阳极在H2SO4溶液中的电化学表面结构以及电化学行为，这种涂层阳极具有多层电化学结构，低频段的阻抗行为对应电极外表面/溶液界面的阻抗特性，高频段对应内表面/溶液界面的电化学特性和电极的物理阻抗。在析氧电位下，由于析出氧气的冲击，电极表面的总反应面积增大，而且析出的氧气对电极表面的改性受表面涂层的组织形态影响很大，由于晶粒的最细化，这种改性作用在IrO2含量为70%时最为明显，制备温度的升高使氧化物电极的多孔结构变得不明显，致密度上升以及活性表面积下降。     

磁控反应溅射制备的Ta2O5薄膜的光学与介电性能

采用直流磁控反应溅射技术，在不同的Ar/O2比条件下制备了系列Ta2O5薄膜样品，采用紫外．可见光透射光谱和椭偏光谱测试分析技术，研究了Ta2O5薄膜在可见光范围内的透射率、折射率和消光系数；同时还采用HP 4192A阻抗分析仪测试分析了样品在500Hz～13MHz频段的介电谱，结果表明在300～700nm的可见光波长范围内，氧化钽薄膜的消光系数k→0，折射率＞2．0，透射率大约80％。500Hz下的低频介电常数5的典型值为20.1。损耗角正切tgδ为19.9。     

阳极氧化法制备非晶Ta2O5及绝缘性能研究

利用阳极氧化法制备Ta2O5绝缘介质薄膜。扫描电子显微镜（SEM）、能谱分析（EDS）和X射线衍射仪（XRD）研究表明Ta2O5绝缘介质薄膜表面平整,致密,呈非晶态。电击穿场强测试系统研究利用Ta-Ta2O5-Al复合薄膜制备FED器件（MIM结构）的绝缘性,表明薄膜具有较高的耐击穿场强,约为2.3MV/cm,分析Ta2O5的导通机理,主要为肖特基效应和F-N效应。     

Observation of Resistive Switching Behavior in Crossbar Core–Shell Ni/NiO Nanowires Memristor

The crossbar structure of resistive random access memory (RRAM) is the most promising technology for the development of ultrahigh‐density devices for future nonvolatile memory. However, only a few studies have focused on the switching phenomenon of crossbar RRAM in detail. The main purpose of this study is to understand the formation and disruption of the conductive filament occurring at the crossbar center by real‐time transmission electron microscope observation. Core–shell Ni/NiO nanowires are utilized to form a cross‐structure, which restrict the position of the conductive filament to the crosscenter. A significant morphological change can be observed near the crossbar center, which results from the out‐diffusion and backfill of oxygen ions. Energy dispersive spectroscopy and electron energy loss spectroscopy demonstrate that the movement of the oxygen ions leads to the evolution of the conductive filament, followed by redox reactions. Moreover, the distinct reliability of the crossbar device is measured via ex situ experiments. In this work, the switching mechanism of the crossbar core–shell nanowire structure is beneficial to overcome the problem of nanoscale minimization. The experimental method shows high potential to fabricate high‐density RRAM devices, which can be applied to 3D stacked package technology and neuromorphic computing systems.     

添加Ta2O5对NiCuZn铁氧体显微结构及磁性能的影响

采用固相反应法制备添加Ta₂O₅的NiCuZn铁氧体, 研究了不同Ta₂O₅含量对NiCuZn铁氧体显微结构, 静磁性能和高频损耗的影响。结果表明: Ta₂O₅具有细化NiCuZn铁氧体晶粒的作用, 可降低材料的烧结密度。随着Ta₂O₅含量的增加, 样品的饱和磁感应强度和起始磁导率单调减小, 矫顽力则逐渐增大, 截止频率逐渐升高, 而高频损耗呈先降低后增加的趋势, 其主导因素由剩余损耗逐渐过渡到磁滞损耗。当Ta₂O₅含量为0.12wt%时, 样品在3 MHz、10 mT、100℃下总损耗最小, 为139 mW/cm³, 其中磁滞损耗和剩余损耗分别为93 mW/cm³和46 mW/cm³。     

Dual‐Stage Light Amplified Photodynamic Therapy against Hypoxic Tumor Based on an O2 Self‐Sufficient Nanoplatform

Tumor hypoxia severely limits the efficacy of traditional photodynamic therapy (PDT). Here, a liposome‐based nanoparticle (designated as LipoMB/CaO₂) with O₂ self‐sufficient property for dual‐stage light‐driven PDT is demonstrated to address this problem. Through a short time irradiation, ¹O₂ activated by the photosensitizer methylene blue (MB) can induce lipid peroxidation to break the liposome, and enlarge the contact area of CaO₂ with H₂O, resulting in accelerated O₂ production. Accelerated O₂ level further regulates hypoxic tumor microenvironment and in turn improves ¹O₂ generation by MB under another long time irradiation. In vitro and in vivo experiments also demonstrate the superior competence of LipoMB/CaO₂ to alleviate tumor hypoxia, suppress tumor growth and antitumor metastasis with low side‐effect. The O₂ self‐sufficient LipoMB/CaO₂ nanoplatform with dual‐stage light manipulation is a successful attempt for PDT against hypoxic tumor.     

C/C复合材料Ta2O5-TaC/SiC抗氧化抗烧蚀涂层研究

采用包埋法和低压化学气相沉积(CVD)法在碳/碳(C/C)复合材料表面依次制备了Ta2O5-TaC内涂层和SiC外涂层,用X射线衍射分析(XRD)、扫描电镜(SEM)及电子能谱(EDS)对涂层的相组成、微观形貌和元素组成进行了分析,研究了涂覆涂层后C/C复合材料在1 500℃静态空气中的防氧化性能及在氧-乙炔烧蚀中的抗烧蚀性能。结果表明:采用两步法制得的Ta2O5-TaC/SiC复合涂层结构致密,该复合涂层有效提高了C/C复合材料的抗氧化和抗烧蚀性能;Ta2O5-TaC/SiC复合涂层在1 500℃静态空气环境下可对C/C复合材料有效保护100 h以上;涂层试样在氧乙炔烧蚀环境中烧蚀60 s表明涂层可将C/C复合材料的线烧蚀率降低47.07%,质量烧蚀率降低29.20%。     

SrBi2Ta2O9铁电薄膜的结构与性能研究进展

综述了SrBi2Ta2O9的结构和性能研究进展,着重阐明化学组成、结晶取向、热处理条件、使用温度对SrBi2Ta2O9铁电性能的影响。结果表明,以Bi4Ti3O12作为过渡层,采用快速热处理法,Sr:Bi:Ta=0.8:2.2:2时,有助于提高SBT薄膜的剩余极化值,降低矫顽场强和电流漏损。     

High Detectivity Solar‐Blind High‐Temperature Deep‐Ultraviolet Photodetector Based on Multi‐Layered (l00) Facet‐Oriented β‐Ga2O3 Nanobelts

Fabrication of a high‐temperature deep‐ultraviolet photodetector working in the solar‐blind spectrum range (190–280 nm) is a challenge due to the degradation in the dark current and photoresponse properties. Herein, β‐Ga₂O₃ multi‐layered nanobelts with (l00) facet‐oriented were synthesized, and were demonstrated for the first time to possess excellent mechanical, electrical properties and stability at a high temperature inside a TEM studies. As‐fabricated DUV solar‐blind photodetectors using (l00) facet‐oriented β‐Ga₂O₃ multi‐layered nanobelts demonstrated enhanced photodetective performances, that is, high sensitivity, high signal‐to‐noise ratio, high spectral selectivity, high speed, and high stability, importantly, at a temperature as high as 433 K, which are comparable to other reported semiconducting nanomaterial photodetectors. In particular, the characteristics of the photoresponsivity of the β‐Ga₂O₃ nanobelt devices include a high photoexcited current (>21 nA), an ultralow dark current (below the detection limit of 10^?14 A), a fast time response (<0.3 s), a high R_λ (≈851 A/W), and a high EQE (～4.2 × 10³). The present fabricated facet‐oriented β‐Ga₂O₃ multi‐layered nanobelt based devices will find practical applications in photodetectors or optical switches for high‐temperature environment.     

Truly Concomitant and Independently Expressed Short‐ and Long‐Term Plasticity in a Bi2O2Se‐Based Three‐Terminal Memristor

Concomitance of diverse synaptic plasticity across different timescales produces complex cognitive processes. To achieve comparable cognitive complexity in memristive neuromorphic systems, devices that are capable of emulating short‐term (STP) and long‐term plasticity (LTP) concomitantly are essential. In existing memristors, however, STP and LTP can only be induced selectively because of the inability to be decoupled using different loci and mechanisms. In this work, the first demonstration of truly concomitant STP and LTP is reported in a three‐terminal memristor that uses independent physical phenomena to represent each form of plasticity. The emerging layered material Bi₂O₂Se is used for memristors for the first time, opening up the prospects for ultrathin, high‐speed, and low‐power neuromorphic devices. The concerted action of STP and LTP allows full‐range modulation of the transient synaptic efficacy, from depression to facilitation, by stimulus frequency or intensity, providing a versatile device platform for neuromorphic function implementation. A heuristic recurrent neural circuitry model is developed to simulate the intricate “sleep–wake cycle autoregulation” process, in which the concomitance of STP and LTP is posited as a key factor in enabling this neural homeostasis. This work sheds new light on the development of generic memristor platforms for highly dynamic neuromorphic computing.