Proposed designs for a “dry” dilution refrigerator with a 1 K condenser

Recent development of “dry” dilution refrigerators has used mechanical cryocoolers and Joule-Thomson expansion stages to cool and liquefy the circulating ³He. While this approach has been highly successful, we propose three alternative designs that use independently-cooled condensers. In the first, the circulating helium is precooled by a mechanical cooler, and liquified by self-contained ⁴He sorption coolers. In the second, the helium is liquefied by a closed-cycle, continuous flow ⁴He refrigerator operating from a room temperature pump. Finally, the third scheme uses a separate ⁴He Joule-Thomson stage to cool the ³He condenser. The condensers in all these schemes are analogous to the “1-K pot” in a conventional dilution refrigerator. Such an approach would be advantageous in certain applications, such as instrumentation for astronomy and particle physics experiment, where a thermal stage at approximately 1 K would allow an alternative heat sink to the still for electronics and radiation shielding, or quantum computer research where a large number of coaxial cables must be heat sunk in the cryostat. Furthermore, the behaviour of such a refrigerator is simplified due to the separation of the condenser stage from the dilution circuit, removing the complex interaction between the 4-K, Joule-Thomson, still and mixing chamber stages found in current dry DR designs.     

Self‐Formed Electronic/Ionic Conductive Fe3S4 @ S @ 0.9Na3SbS4⋅0.1NaI Composite for High‐Performance Room‐Temperature All‐Solid‐State Sodium–Sulfur Battery

Fe₃S₄ @ S @ 0.9Na₃SbS₄?0.1NaI composite cathode is prepared through one‐step wet‐mechanochemical milling procedure. During milling process, ionic conduction pathway is self‐formed in the composite due to the formation of 0.9Na₃SbS₄?0.1NaI electrolyte without further annealing treatment. Meanwhile, the introduction of Fe₃S₄ can increase the electronic conductivity of the composite cathode by one order of magnitude and nearly double enhance the ionic conductivities. Besides, the aggregation of sulfur is effectively suppressed in the obtained Fe₃S₄ @ S @ 0.9Na₃SbS₄?0.1NaI composite, which will enhance the contact between sulfur and 0.9Na₃SbS₄?0.1NaI electrolyte, leading to a decreased interfacial resistance and improving the electrochemical kinetics of sulfur. Therefore, the resultant all‐solid‐state sodium–sulfur battery employing Fe₃S₄ @ S @ 0.9Na₃SbS₄?0.1NaI composite cathode shows discharge capacity of 808.7 mAh g^?1 based on Fe₃S₄@S and a normalized discharge capacity of 1040.5 mAh g^?1 for element S at 100 mA g^?1 for 30 cycles at room temperature. Moreover, the battery also exhibits excellent cycling stability with a reversible capacity of 410 mAh g^?1 at 500 mA g^?1 for 50 cycles, and superior rate capability with capacities of 952.4, 796.7, 513.7, and 445.6 mAh g^?1 at 50, 100, 200, and 500 mA g^?1, respectively. This facile strategy for sulfur‐based composite cathode is attractive for achieving room‐temperature sodium–sulfur batteries with superior electrochemical performance.     

The structure and properties of a Cr<Subscript>3</Subscript>C<Subscript>2</Subscript>-Ni coating deposited by a high-velocity plasma jet onto a copper substrate

Chromium carbide-nickel coatings were deposited onto a technical grade copper substrate by means of a high-velocity plasma jet of a plasmatron operating in specially selected regimes. An analysis of the coatings showed evidence of the formation of a Ni-based solid solution, a complex chromium carbide (Cr₇C₃), and an fcc crystal phase with a lattice parameter of 3.614 Å. The surface of the coatings exhibits a characteristic relief resulting from a dynamic interaction between melted and fused particles of the initial powder. The local hardness on some areas of the surface and in depth of the coating reaches 66±4.5 HRC, while the coating adhesion strength varies from 25 to 300 MPa.     

The future of patent information––a user with a view

The future of patent information is considered from the combined perspective of an information specialist, a patent agent, an inventor and a corporate patent information user. A brief overview of current patenting trends is highlighted, followed by a close look at future trends in the patent information field, including changes in the delivery, analysis and management of patent information, and in the role of intermediaries. A few examples are provided in support of forward-looking statements to illustrate the challenging dynamics involved in this field. Finally, a long-term view is considered, which indicates there remains much need for improvement.     

Zinc Diffusion into InP via a Narrow Gap from a Planar Zn<Subscript>3</Subscript>P<Subscript>2</Subscript>-Based Source

An original technology of zinc diffusion into InP via a narrow gap is described, which allows reproducible formation of p–n junctions with preset depth of doping and retained surface morphology of the doped layers. Using the proposed method, desired charge carrier distribution profiles in Zn-doped InP layers were obtained. It has been experimentally confirmed that the method of cross-sectional scanning electron microscopy allows to precision measure of the zinc diffusion depth.     

Two-wavelength emission from a GaInPAsSb/InAs structure with a broken-gap isotype heterojunction and a <Emphasis Type="Italic">p-n</Emphasis> junction in the substrate

An electroluminescent structure of the P-Ga_0.92In_0.08P_0.05As_0.08Sb_0.87/p-InAs/n-InAs type containing a broken-gap P-p isotype heterojunction and a p-n junction in the substrate volume is obtained and is shown to exhibit emission peaks at λ=1.9 and 3.1 μm at 77 K and 2.1 and 3.6 μm at 300 K. The longwave luminescence band is due to radiative recombination in the p-region of the p-n junction. The shortwave luminescence band is due to recombination in the P-GaInPAsSb wide-bandgap solid solution layer to which non-equilibrium electrons are supplied from the p-n junction in the substrate volume.     

Microstructure and phase transformations in a Ni<Subscript>50</Subscript>Mn<Subscript>29</Subscript>Ga<Subscript>16</Subscript>Gd<Subscript>5</Subscript> alloy with a high transformation temperature

A Heusler Ni₅₀Mn₂₉Ga₁₆Gd₅ alloy with a high transformation temperature has been obtained by substituting 5 at% Gd for Ga in a ternary Ni₅₀Mn₂₉Ga₂₁ ferromagnetic shape memory alloy. The microstructure and phase transformations in the Ni₅₀Mn₂₉Ga₁₆Gd₅ alloy have been investigated by scanning electron microscopy, transmission electron microscopy, X-ray diffraction and differential scanning calorimetry. It is shown that the microstructure of the Ni₅₀Mn₂₉Ga₁₆Gd₅ alloy consists of matrix and hexagonal Gd (Ni,Mn)₄Ga phase, which indicates a eutectic structure composed of these two phases. One-step thermoelastic martensitic transformation occurs in this quaternary alloy. Ni₅₀Mn₂₉Ga₁₆Gd₅ alloy exhibits a martensite transformation start temperature up to 524 K, approximately 200 K higher than that of Ni₅₀Mn₂₉Ga₂₁ alloy. At room temperature, non-modulated martensite with twin substructure is observed in Ni₅₀Mn₂₉Ga₁₆Gd₅ alloy.     

Dissociation energy of a Sc<Subscript>2</Subscript> molecule

The–(G°(T)–H°(0))/T Gibbs energy functions have been calculated for Sc₂ at Т = 2000 K in the context of recent data on the low-lying electron states for this kind of molecules. In particular, some recent experimental results on the vapor composition over scandium are presented in this study. The data on the measured scandium vapor composition have been processed using the evaluated Gibbs energy function values. The advised dissociation energy value for Sc₂ is found to be D°₀(Sc₂) = 7750 ± 1750 cm^–1.     

Mechanisms of the formation of a surface phase with the matrix composition in a Ca<Subscript>2</Subscript>Nb<Subscript>2</Subscript>O<Subscript>7</Subscript> single crystal

We have studied the local composition and nanoscale surface morphology of a calcium niobate, Сa₂Nb₂O₇, single crystal after thermally stimulated heterosegregation with the aim of identifying the mechanisms underlying the formation of a surface phase with the matrix composition. The identity of the compositions of the surface phase and matrix is accounted for in terms of a liquid-phase model for surface segregation, which includes diffusion, melting, and crystallization processes.     

Induced Voltage Measurements on a YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>7−<Emphasis Type="Italic">δ</Emphasis></Subscript> Superconducting Thin Film Due to a Pair of Rotating Magnets

In this study, the induced voltages due to the rotation of a pair of magnets on an YBCO superconducting thin film sample (SS) with and without bias current were measured. It was found that the induced root mean square voltage (V _rms) was a constant (V ₀) at temperatures higher than the critical temperature (T _c ) of the SS, as expected from Faraday’s law. At a temperature in the superconducting transition region, the induced V _rms is a sensitive function of both the motion of the magnet and the bias current applied to the SS. These results can be understood by considering the superposition of the two kinds of induced voltages. One is induced according to Faraday’s law, and the other one is induced by the vortex movements inside the SS which is caused by the bias current. At temperatures below the transition region, the induced V _rms had a value equal to V ₀ and remained unchanged as the temperature further decreased. An explanation based on the distribution of the magnetic flux inside the SS was given, and it was concluded that the superconductor-normal conductor loop acted like a normal-normal conductor loop to the moving magnetic fields in this low temperature region.     

An X‐FEM‐based numerical–asymptotic expansion for simulating a Stokes flow near a sharp corner

A numerical technique that is based on the integration of the asymptotic solution in the numerical framework for computing the local singular behavior of Stokes flow near a sharp corner is presented. Moffat's asymptotic solution is used, and special enriched shape functions are developed and integrated in the extended finite element method (X‐FEM) framework to solve the Navier–Stokes equations. The no‐slip boundary condition on the walls of the corner is enforced via the use of Lagrange multipliers. Flows around corners with different angles are simulated, and the results are compared with both those of the known analytic solution and the X‐FEM with no special enrichment near the corner. The results of the present technique are shown to greatly reduce the error made in computing the pressure and velocity fields near a corner tip without the need for mesh refinement near the corner. The method is then applied to the estimation of the permeability of a network of fibers, where it is shown that the local small‐scale pressure singularities have a large impact on the large‐scale network permeability. Copyright © 2014 John Wiley & Sons, Ltd.