Full-wave analysis of aperture-coupled microstrip lines

Two methods are presented for the analysis of aperture-coupled microstrip lines. Assuming a quasi-transverse electromagnetic traveling wave incident on the feeding line, an expression for the wave on the coupled line is derived. First, the moment method is used and the current on the coupled line is represented by a traveling wave propagating away from the slot. In the second method, the reciprocity theorem is applied to the coupled line. Both the moment method and the reciprocity method make use of the exact Green functions and produce results that are in very close agreement. An equivalent circuit is derived and the S-parameters are computed. Theoretical results are verified with measurements     

用Cauer网络综合技术提取PBG等效电路模型

本文从全波场分析结果出发,提取了PBG单元结构的集总等效有耗电路模型。对每个PBG单元采用时域有限差分（FDTD）方法进行全波分析,然后用Cauer部分分式展开形式和网络综合技术,由全波分析结果提取等效有损电路模型参数,并将提取获得的PBG单元等儿电路模型嵌入HP－ADS软件对整个PBG结构进行SPICE分析,得到的散射参量和全波分析结果比较基本一致,证明了该模型的准确性。这种模型可以嵌入电路分析和设计软件中,用来对应用了PBG结构的无源和有源电路进行优化与设计。     

An investigation of the power characteristics and saturationmechanisms in HEMTs and MESFETs

A method for large-signal transistor analysis is presented. The method is based on the harmonic-balance approach but makes use of input data from measured S-parameters instead of DC or pulsed DC characteristics and a large-signal equivalent circuit with harmonic elements. The topology of this circuit is nearly identical to commonly used small-signal equivalent circuits; its application allows a detailed interpretation of the computed results, which are very precise due to the use of small-signal S-parameters. The large-signal model is applied to HEMTs and MESFETs. Their saturation mechanisms are investigated and the operational difference is discussed. The importance of including higher harmonic signal components in the large-signal analysis is also shown     

CRLH-TL激励源的设置和S参数的提取计算

该文使用两种全波分析法对传统的带阻滤波器和一维复合左右手传输线(Composite Right/left-handed Transmission Line CRLH-TL)进行了数值分析,解决了多端口激励源的设置和多端口S参数提取的两大难点,计算结果分别与FEKO和电路模型等效法的分析结论进行了比较,吻合较好;并通过增加CRLH单元数得出电路模型等效法的不足,不仅验证了此激励源设置和S参数提取的正确性,也得出了CRLH-TL不同于传统右手传输线的一些左手特性,为分析、优化CRLH传输线以及CRLH漏波天线提供了一定的理论支持。     

Very high-frequency small-signal equivalent circuit for shortgate-length InP HEMTs

A small-signal equivalent circuit for short gate-length InP high electron-mobility transistors (HEMTs) operating at very high frequency (HF) is proposed. First, the extrinsic parameters of the equivalent circuit are determined using a cold HEMT, but without forward gate bias. Then the intrinsic parameters of the equivalent circuit are extracted, including the frequency dependence of some of them. A fast and accurate method based on least-squares regressions is presented to obtain the extrinsic and intrinsic parameters from measured S-parameters. The improved equivalent circuit accurately fits the S-parameters of 0.25-μm InP HEMTs over the 500-MHz up to 40-GHz measurement bandwidth, for all gate-to-source and drain-to-source voltages     

两种接地条件下的片上变压器的分析与建模

本文在两种接地条件（即共地情况和隔离地情况）下分别设计制作了两个片上变压器,并对这两个片上变压器的不同特性进行了相应的测试与比较。借助于电磁场仿真软件,本文分别从电场和磁场两方面对两种接地条件下片上变压器的不同性能进行深入分析。从等效电路模型的角度考虑,片上变压器在这两方面（即电场和磁场方面）的差异可以归结为集总电容和集总电感的差异。基于物理意义,本文为两种接地条件下的片上变压器提供了等效电路模型。另外,针对相应等效电路模型的简单参数提取方法同样呈现在文中。本文对模型中的所有参数均进行提取,提取结果与前文的分析相吻合。为了检验所提出模型的有效性和准确性,本文比较了模型仿真和实际测试下的散射参数,发现两者在很宽的频率范围内均吻合得很好。     

Application of a new MPIE formulation to the analysis of adielectric resonator embedded in a multilayered medium coupled to amicrostrip circuit

A new mixed-potential integral-equation (MPIE) formulation is developed for the analysis of electromagnetic problems due to conducting or dielectric objects of arbitrary shape embedded in a planarly stratified medium. In the new MPIE formulation, the dyadic kernel of the vector potential is kept in the simple form originally developed by Sommerfeld. The scalar potential, which is related to the vector potential via the Lorenz gauge, is then represented by a double dot product of a dyadic kernel with a dyadic charge density. An extra line integral term, which is well behaved and nonsingular, will appear when the object penetrates an interface. The numerical implementation of the double dot product is found to be trivial if one takes advantage of the well-established basis functions in which the unknown current density is expressed. The new MPIE formulation is employed in conjunction with the triangular patch model to treat the problem of a dielectric resonator (DR) excited by microstrip circuit. A matched-load simulation procedure has been used to extract the network S-parameters of a DR microstrip circuit. The diameters of the Q circles have been measured to determine the coupling coefficients and the Q factors of the DR excited by a microstrip circuit. The validity of the new MPIE formulation and the numerical procedure have been verified by comparing the obtained S-parameters, with available measurement data     

A parallel FFT accelerated transient field-circuit simulator

A novel fast electromagnetic field-circuit simulator that permits the full-wave modeling of transients in nonlinear microwave circuits is proposed. This time-domain simulator is composed of two components: 1) a full-wave solver that models interactions of electromagnetic fields with conducting surfaces and finite dielectric volumes by solving time-domain surface and volume electric field integral equations, respectively, and 2) a circuit solver that models field interactions with lumped circuits, which are potentially active and nonlinear, by solving Kirchoff's equations through modified nodal analysis. These field and circuit analysis components are consistently interfaced and the resulting coupled set of nonlinear equations is evolved in time by a multidimensional Newton-Raphson scheme. The solution procedure is accelerated by allocating field- and circuit-related computations across the processors of a distributed-memory cluster, which communicate using the message-passing interface standard. Furthermore, the electromagnetic field solver, whose demand for computational resources far outpaces that of the circuit solver, is accelerated by a fast Fourier transform (FFT)-based algorithm, viz. the time-domain adaptive integral method. The resulting parallel FFT accelerated transient field-circuit simulator is applied to the analysis of various active and nonlinear microwave circuits, including power-combining arrays.     

Calculation of the surface-wave excitation in multilayeredstructures

A novel rigorous analysis of the surface waves excited by a Hertzian dipole embedded in a multilayered structure is presented. A transmission-line resonator equivalent circuit is used to calculate the surface wave's electromagnetic field components. It is shown that the power carried by the surface waves is related to the energy stored in the resonator. An analytical method for the calculation of the stored energy is given. A simple algorithm iterating over the layers of the structure is derived to analytically calculate the surface wave's electromagnetic field components and the power carried by surface waves. The need of numerical integration or calculation of residues is omitted. This benefits a reduction in computation time and an improvement in accuracy and versatility of computer-aided design (CAD) programs. The presented method has been implemented in a microwave CAD program. Numerical results for planar antennas are presented     

利用频率选择表面改善微波吸收材料S波段的吸波性能

研究了如何利用金属周期性频率选择表面(FSS)的频率特性来改善微波吸收材料S波段的吸波性能。利用频率选择表面的等效电路和传输线理论分析了FSS和吸波材料涂层双层结构的微波反射特性。采用基于有限元方法的电磁波全波分析软件设计并仿真分析了FSS的结构和尺寸,实际制作了FSS和吸波材料涂层双层结构,测量了微波反射性能。理论分析和实验研究表明,利用FSS可以明显改善吸波材料涂层S波段的吸波性能,展宽涂层的吸波带宽,从而改善吸波材料的低频吸波性能。     

Circular-pad via model based on cavity field analysis

An equivalent circuit model of a circular-pad grounding via is proposed based on cavity modal analysis. The modes of the via are derived analytically. Each mode is represented by an equivalent circuit taking into account ohmic losses, as well as losses due to spatial and surface wave radiation. It is shown that the degradation of grounding via characteristics at high frequencies is caused by the multimode effects and radiation. The accuracy of the proposed semi-analytical via model is comparable with that of full-wave analysis up to 75 GHz. It is fast and is easily incorporated in high-frequency circuit simulators.     

高阻抗电磁表面及其在真空电子器件中的应用

近十年来,一种新型的高电磁阻抗表面得到迅速发展。这种高电磁阻抗表面实际上是一种新的电磁结构——光子带隙晶体结构。在频率禁带,这种结构的表面具有很高的电磁阻抗。利用这种特性,可以构建一种平面型行波管。这种行波管采用曲折线作互作用慢波电路。为了减小电磁波传输损耗,曲折线放置在高电磁阻抗表面上。本文对高电磁阻抗表面的特性和这种平面型行波管的工作原理进行了讨论。     

A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs

A new four-port scattering parameter (S-parameter) and broad-band noise deembedding methodology is presented. This deembedding technique considers distributed on-wafer parasitics in the millimeter-wave band (f>30GHz). The procedure is based on simple analytical calculations and requires no equivalent circuit modeling or electromagnetic simulations. Detailed four-port system analysis and deembedding expressions are derived. Comparisons between this new method and the industry-standard "open-short" method were made using measured and simulated data on state-of-the-art SiGe HBTs with a maximum cutoff frequency of approximately 180 GHz. The comparison demonstrates that better accuracy is achieved using this new four-port method. Based on a combination of measurements and HP-ADS simulations, we also show that this new technique can be used to accurately extract the S-parameters and broad-band noise characteristics to frequencies above 100 GHz.     

砷化镓衬底上螺旋电感的建模和分析

针对砷化镓(GaAs)衬底上螺旋电感提出了一种改进形式的集总参数等效电路模型,该等效电路模型能很好地表征螺旋电感的高频效应.同时,应用电磁场全波分析方法对螺旋电感进行仿真,并分析各参数对电感性能的影响.从得到的散射参数中提取出有效电感、Q值和自谐振频率.基于参数优化方法提取等效电路模型中各元件值,并利用曲线拟合技术给出其相应的闭合表达式.这些表达式可用于射频和微波集成电路的设计,从而提高电路设计的性能和效率.     

在片传输线等效电路模型的传递函数分析

提出了一种通过传递函数分析来确定在片传输线等效电路模型拓扑结构的新方法。通过这种方法,可分析得出由不同1-π单元组成的等效电路的拟合能力。通过对测量S参数的有理逼近构建了一个宽带宏模型。通过对比等效电路模型与宏模型的传递函数的零点和极点,开发出一种可靠且高效的确定传递函数等效电路结构的方法。分析发现复极点决定了模型的宽带拟合能力。共面传输线到50 GHz的测量S参数证明了本文提出的方法非常有助于寻找满足精度要求且最简单的拓扑。     

A new parameter extraction technique for small-signal equivalentcircuit of polysilicon emitter bipolar transistors

We propose a new parameter extraction method for advanced polysilicon emitter bipolar transistors. This method is based on the predetermination of equivalent circuit parameters using the analytical expressions of de-embedded Z-parameters of these devices. These parameter values are used as initial values for the parameter extraction process using optimization. The entire device equivalent circuit, containing RF probe pad and interconnection circuit parameters extracted by test structures, is optimized to fit measured S-parameters for eliminating de-embedding errors due to the imperfection of pad and interconnection test structures. The equivalent circuit determined by this method shows excellent agreement with the measured S-parameters from 0.1 to 26.5 GHz     

随钻电磁波在矿产识别中的应用分析

相比泥浆脉冲传输而言,随钻电磁波传输方式具有不依赖钻井泥浆介质循环、信息传输快等优点,此外,电磁波对于地层电阻率反映灵敏度高,便于及时发现矿产目的层.正是基于上述特点,近年来随钻电磁波传输系统越来越广泛地应用于石油、天然气和煤层气（煤矿）等矿产资源的开发.文中采用不同于以往的随钻电磁波传输分析方法,即根据电磁波在地层中传播规律和极低频（extremely low frequency, ELF）电磁波的近场辐射特性,采用等效电路法对随钻电磁波在地层信道中的传输进行分析.此外,根据等效电路分析结果,利用地面接收电磁波信号幅度包络瞬时变化率大小来作为判断地层电阻率特性的条件.山西沁水煤层探测案例实际结果验证了提出的方法在煤炭等矿产资源探测方面具有明显时效性,进一步证明了随钻电磁波信息传输系统可以同时兼作一种有效的实时测井系统.     

Hybrid S-Parameters for Transmission Line Networks With Linear/Nonlinear Load Terminations Subject to Arbitrary Excitations

We propose a generalized S-parameter analysis for transmission lines (TLs) with linear/nonlinear load terminations subject to arbitrary plane-wave and port excitations. S-parameters are prevalently used to model TLs such as cable bundles and interconnects on printed circuit boards (PCBs) subject to port excitations. The conventional S-parameter approach is well suited to characterize interactions among ports. However, nontraditional port excitations associated with plane-wave coupling to physical ports at TL terminals lead to forced, as well as propagating, modal waves, necessitating a modification of the standard S-parameter characterization. In this paper, we consider external plane-wave excitations, as well as port (internal) sources, and propose a hybrid S-parameter matrix for characterization of the associated microwave network and systems. A key aspect of the approach is to treat the forced waves at the ports as constant voltage sources and induced propagating modal waves as additional entries (hybrid S-parameters) in the S-parameter matrix. The resulting hybrid S-matrix and voltage sources can be subsequently exported to any circuit solver such as HSPICE and Agilent's Advanced Design System for the analysis of combined linear and nonlinear circuit terminations at ports. The proposed method is particularly suited for susceptibility analysis of cable bundles and PCBs for electromagnetic interference evaluations. It also exploits numerical techniques for structural and circuit domain characterization and allows for circuit design optimization without a need to perform any further computational electromagnetic analysis     

A Broadband and Scalable Lumped Element Model for Fully Symmetric Inductors Under Single-Ended and Differentially Driven Operations

A broadband and scalable 2-T model is developed to accurately simulate fully symmetric inductors with various dimensions. The 2-T model is defined to reflect the structure of an equivalent circuit with two identical T-model circuits. Two-step de-embedding is assisted by open and through pads for extraction of intrinsic characteristics. The accuracy is validated by 3-D full- wave electromagnetic simulation. A novel parameter extraction flow is established, and a single set of model parameters is derived to be valid for both single-ended and differentially driven topologies. The broadband accuracy is proven by a good match with S-parameters, L(omega), Re(Z_ln(omega)), and Q(omega) over frequencies up to 20 GHz. The scalability is justified by good fitting with either a linear or a parabolic function of spiral coil radii. Furthermore, all model parameters are frequency independent so as to ensure computation efficiency. This 2-T model consistently predicts the enhancement of Q_max by 20%-30% for the symmetric inductors under a differential excitation. The Q improvement is even better than 100% over broader frequencies beyond f_m (Q_max).     

Analytical parameter extraction of the HBT equivalent circuit withT-like topology from measured S-parameters

A pure analytical method for extraction of the small-signal equivalent circuit parameters from measured data is presented and successfully applied to heterojunction bipolar transistors (HBT's). The T-like equivalent circuit is cut into three shells accounting for the connection, and the extrinsic and intrinsic parts of the transistor. The equivalent circuit elements are evaluated in a straightforward manner from impedance and admittance representation of the measured S-parameters. The measured data are stripped during the extraction process yielding, step by step, a full set of circuit elements without using fit methods. No additional knowledge of the transistor is needed to start the extraction process with its self-consistent iteration loop for the connection shell. The extrinsic and intrinsic equivalent circuit elements are evaluated using their bias and frequency dependencies. This method yields a deviation of less then 4% between measured and modeled S-parameters