Origin of diameter-dependent growth direction of silicon nanowires

A nucleation thermodynamic model was developed to clarify the diameter-dependent crystallographic orientation of silicon nanowires (SiNWs) grown via the vapor-liquid-solid (VLS) mechanism with an Au catalyst. The calculated critical energies (E(r*)) and corresponding critical radii (r*) of the SiNWs with <111> and <110> orientations as a function of Au-catalyst size (D(Au)) revealed that the 110-oriented SiNW with r is preferred below D(Au) = approximately 25 nm, but the preferred direction changes to <111> above D(Au) = approximately 25 nm. The model indicated that the nucleated SiNW with a radius (r) above r is stable and continues to grow until the diameter becomes equal to D(Au) but that the crystallographic orientation is maintained. Thus, the predicted growth direction of the final SiNW with a size of D(Au) is <110> for D(Au) < approximately 25 nm and <111> for D(Au) > approximately 25 nm, which is in excellent agreement with reported experimental results.     

Pressure-induced orientation control of the growth of epitaxial silicon nanowires

Single crystal silicon nanowires (SiNWs) were synthesized with silane reactant using Au nanocluster-catalyzed one-dimensional growth. We have shown that under our experimental conditions, SiNWs grown epitaxially on Si(111) via the vapor-liquid-solid growth mechanism change their growth direction as a function of the total pressure. Structural characterization of a large number of samples shows that SiNWs synthesized at a total pressure of 3 mbar grow preferentially in the 111 direction, while the one at 15 mbar favors the 112 direction. Specifically by dynamically changing the system pressure during the growth process morphological changes of the NW growth directions along their length have been demonstrated.     

Diameter-dependent coloration of silver nanowires

Silver nanowires were synthesized with a green method and characterized with microscopic and diffractometric methods. The correlation between the colors of the nanowires deposited on a solid substrate and their diameters was explored. Silver nanowires that appear similar in color in the optical micrographs have very similar diameters as determined by atomic force microscopy. We have summarized the diameter-dependent coloration for these silver nanowires. An optical interference model was applied to explain such correlation. In addition, microreflectance spectra were obtained from individual nanowires and the observed spectra can be explained with the optical interference theory. This work provides a cheap, quick and simple screening method for studying the diameter distribution of silver nanowires, as well as the diameter variations of individual silver nanowires, without complicated sample preparation.     

Au-free epitaxial growth of InAs nanowires

III-V nanowires have been fabricated by metal-organic vapor-phase epitaxy without using Au or other metal particles as a catalyst. Instead, prior to growth, a thin SiOx layer is deposited on the substrates. Wires form on various III-V substrates as well as on Si. They are nontapered in thickness and exhibit a hexagonal cross-section. From high-resolution X-ray diffraction, the epitaxial relation between wires and substrates is demonstrated and their crystal structure is determined.     

Diameter-dependent electromechanical properties of GaN nanowires

The diameter-dependent Young's modulus, E, and quality factor, Q, of GaN nanowires were measured using electromechanical resonance analysis in a transmission electron microscope. E is close to the theoretical bulk value ( approximately 300 GPa) for a large diameter nanowire (d=84 nm) but is significantly smaller for smaller diameters. At room temperature, Q is as high as 2,800 for d=84 nm, significantly greater than what is obtained from micromachined Si resonators of comparable surface-to-volume ratio. This implies significant advantages of smooth-surfaced GaN nanowire resonators for nanoelectromechanical system (NEMS) applications. Two closely spaced resonances are observed and attributed to the low-symmetry triangular cross section of the nanowires.     

Stranski-Krastanow growth of germanium on silicon nanowires

There have been extensive studies of germanium (Ge) grown on planar silicon (Si) substrates by the Stranski-Krastanow (S-K) mechanism. In this study, we present S-K growth of Ge on Si nanowires. The Si nanowires were grown at 500 degrees C by a vapor-liquid-solid (VLS) method, using silane (SiH4) as the gaseous precursor. By switching the gas source from SiH4 to germane (GeH4) during the growth and maintaining the growth conditions, epitaxial Ge islands deposited on the outer surface of the initially formed Si nanowires. Transmission electron microscopy (TEM), scanning TEM, and energy-dispersive X-ray spectroscopy techniques were utilized to identify the thin wetting layer and the three-dimensional Ge islands formed around the Si core nanowires. Cross-sectional TEM verified the surface faceting of the Si core nanowires as well as the Ge islands.     

Stressed solid-phase epitaxial growth of ion-implanted amorphous silicon

The kinetics of stressed solid-phase epitaxial growth (SPEG), also referred to as solid-phase epitaxy, solid-phase epitaxial regrowth, solid-phase epitaxial recrystallization, and solid-phase epitaxial crystallization, of amorphous () silicon (Si) created via ion-implantation are reviewed. The effects of hydrostatic, in-plane uniaxial, and normal uniaxial compressive stress on SPEG kinetics are examined in intrinsic (0 0 1)Si. Particular emphasis is placed on unifying the results of different experiments in a single-stress-dependent SPEG model. SPEG kinetics are observed to suffer similar exponentially enhanced growth rates in hydrostatic and normal uniaxial compressive stress. However, there are discrepancies between researchers in terms of the influence of in-plane stress on growth rates. Two different stress-dependent SPEG models are thus advanced, each with different physical bases. The model advanced by Aziz et al. proposes SPEG can be modeled as a single-atomistic process while the model advanced by Rudawski et al. suggests that stress influences the nucleation and migration processes of growth differently and that SPEG cannot be modeled as a single step. The basis for the Rudawski et al. model is based on the crystal island and ledge migration model of SPEG advanced by others. Morphological instabilities of the growing /crystalline interface with in-plane compression are also addressed within the context of both the Aziz et al. and Rudawski et al. models. Finally, using the Rudawski et al. model, it is possible to examine, characterize, and isolate the different atomistic processes during growth. Calculation of the activation energies for nucleation and migrations processes suggests that the activation energy of 2.7 eV observed for the growth rate in stress-free SPEG by Olsen and Roth is representative of the activation energy for the single-atomistic process of crystal island nucleation. Thus, the study of stressed SPEG provides a new atomistic picture of the nature of growth.     

Self-catalytic growth of silicon nanowires on stainless steel

Silicon nanowires were grown on a stainless steel substrate using a vapor-liquid-solid mechanism in self-catalytic mode. The multi-component Fe-Cr-Ni-Mn-Si catalyst that was formed from the substrate leads the growth of single-crystal Si nanowires with lengths of several micrometers and diameters ranging from 100 to 150 nm. A systematic investigation of the processing parameters revealed that the hydrogen flow rate is critical to the growth of the nanowires. At a high flow rate that exceeds 1000 sccm, the substrate is embrittled by H₂, and liquid droplets, which lead the growth of nanowires by the vapor-liquid-solid mechanism, are formed on the substrate. Electrical transport measurements indicated that the nanowires grown with the multi-component catalyst have electrical properties comparable to those grown by a single-component Ti catalyst.     

Silicide-induced multi-wall carbon nanotube growth on silicon nanowires

A novel multi-walled carbon nanotube (MWNT) growth process is reported based on carbon incorporation in a nickel catalyst layer deposited via plasma-enhanced atomic layer deposition (PEALD) on silicon nanowires and silicon wafer substrates. As-deposited PEALD Ni films containing relatively high amounts of carbon (>18?at.%) were observed to promote the growth of MWNTs upon post-deposition rapid thermal annealing. For these films the carbon originated from the ALD precursor ligand and MWNT growth occurred in the absence of a vapor-phase carbon feedstock. MWNT growth relied on the formation of nickel silicide at the PEALD Ni/Si interface which increased the local carbon concentration in the Ni film sufficiently to promote carbon saturation/precipitation at Ni catalyst grains and nucleate MWNT growth. Similar MWNT growth from annealed PEALD Ni films was not observed on SiO(2)-coated Si wafer substrates, consistent with the role of silicidation in the observed Ni-catalyzed MWNT growth on Si. This MWNT growth mode requires neither the catalytic decomposition of a gaseous hydrocarbon source nor the high-temperature pyrolysis of metallocene materials and purposely avoids a catalyst diffusion barrier at the Si substrate, commonly used in MWNT growth processes on Si.     

The growth of small diameter silicon nanowires to nanotrees

In this work we have studied a way to control the growth of small diameter silicon nanowires by?the vapour-liquid-solid (VLS) mode. We have developed a method to deposit colloids with good density control, which is a key point for control of the nanowire (NW) diameter. We also show the high dependence of the allowed growth diameter on the growth conditions, opening the door to the realization of as-grown 2?nm silicon NWs. Finally we have developed a smart way to realize nanotrees in the same run, by tuning the growth conditions and using gold on the sidewall of nanowires, without the need for two catalyst deposition steps.     

Epitaxial growth of silicon nanowires using an aluminium catalyst

Silicon nanowires have been identified as important components for future electronic and sensor nanodevices. So far gold has dominated as the catalyst for growing Si nanowires via the vapour-liquid-solid (VLS) mechanism. Unfortunately, gold traps electrons and holes in Si and poses a serious contamination problem for Si complementary metal oxide semiconductor (CMOS) processing. Although there are some reports on the use of non-gold catalysts for Si nanowire growth, either the growth requires high temperatures and/or the catalysts are not compatible with CMOS requirements. From a technological standpoint, a much more attractive catalyst material would be aluminium, as it is a standard metal in Si process lines. Here we report for the first time the epitaxial growth of Al-catalysed Si nanowires and suggest that growth proceeds via a vapour-solid-solid (VSS) rather than a VLS mechanism. It is also found that the tapering of the nanowires can be strongly reduced by lowering the growth temperature.     

Electric-field assisted growth and self-assembly of intrinsic silicon nanowires

Electric-field assisted growth and self-assembly of intrinsic silicon nanowires, in-situ, is demonstrated. The nanowires are seen to respond to the presence of a localized DC electric field set up between adjacent MEMS structures. The response is expressed in the form of improved nanowire order, alignment, and organization while transcending a gap. This process provides a simple yet reliable method for enhanced control over intrinsic one-dimensional nanostructure placement and handling.     

Fabrication of vertical ZnO nanowires on silicon (100) with epitaxial ZnO buffer layer

Vertical ZnO nanowires were successfully grown on epitaxial ZnO (002) buffer layer/Si (100) substrate. The nanowire growth process was controlled by surface morphology and orientation of the epitaxial ZnO buffer layer, which was deposited by radio-frequency (rf) sputtering. The copper catalyzed the vapor-liquid-solid growth of ZnO nanowires with diameter of approximately 30 nm and length of approximately 5.0 microm. The perfect wurtzite epitaxial structure (HCP structure) of the ZnO (0002) nanowires synthesized on ZnO (002) buffer layer/Si (100) substrate results in excellent optical characteristics such as strong UV emission at 380 nm with potential use in nano-optical and nano-electronic devices.     

Hot-wire chemical vapor deposition for epitaxial silicon growth on large-grained polycrystalline silicon templates

We investigate low-temperature epitaxial growth of thin silicon films by HWCVD on Si [1 0 0] substrates and polycrystalline template layers formed by selective nucleation and solid phase epitaxy (SNSPE). We have grown 300-nm thick epitaxial layers at 300 °C on silicon [1 0 0] substrates using a high H₂:SiH₄ ratio of 70:1. Transmission electron microscopy confirms that the films are epitaxial with a periodic array of stacking faults and are highly twinned after approximately 240 nm of growth. Evidence is also presented for epitaxial growth on polycrystalline SNSPE templates under the same growth conditions.     

Controlling silicon nanowire growth direction via surface chemistry

We report on the first in situ chemical investigation of vapor-liquid-solid semiconductor nanowire growth and reveal the important, and previously unrecognized, role of transient surface chemistry near the triple-phase line. Real-time infrared spectroscopy measurements coupled with postgrowth electron microscopy demonstrate that covalently bonded hydrogen atoms are responsible for the (left angle bracket 111 right angle bracket) to (left angle bracket 112 right angle bracket) growth orientation transition commonly observed during Si nanowire growth. Our findings provide insight into the root cause of this well-known nanowire growth phenomenon and open a new route to rationally engineer the crystal structure of these nanoscale semi-conductors.     

Growth of high-density titanium silicide nanowires in a single direction on a silicon surface

Understanding the growth mechanisms of nanowires is essential for their successful implementation in advanced devices applications. In situ ultrahigh-vacuum transmission electron microscopy has been applied to elucidate the interaction mechanisms of titanium disilicide nanowires (TiSi2 NWs) on Si(111) substrate. Two phenomena were observed: merging of the two NWs in the same direction, and collapse of one NW on a competing NW in a different direction when they meet at the ends. On the other hand, as one NW encounters the midsection of the other NW in a different direction, it recedes in favor of bulging of the other NW at the midsection. Since crystallographically the nanowires are favored to grow on Si(110) only in the [1 -1 0] direction, this crucial information has been fruitfully exploited to focus on the growth of a high density of long and high-aspect-ratio Ti silicide NWs parallel to the surface on Si(110) in a single direction. The achievement in growth of high-density NWs in a single direction represents a significant advance in realizing the vast potential for applications of silicide NWs in nanoelectronics devices.     

Gallium-assisted growth of silicon nanowires by electron cyclotron resonance plasmas

The use of gallium droplets for growing Si nanowires (SiNWs) by electron cyclotron resonance plasmas is investigated. First, the relationship between evaporation time and resultant size of the gallium droplets is studied. Through the use of spectroscopic ellipsometry, the dependence of the surface plasmon resonance (SPR) energy on the droplet size is determined. From these gallium droplets, SiNWs were grown at 300 and 550?°C in electron cyclotron resonance plasmas containing SiH(4), Ar, and H(2). Scanning electron microscopy results show that tapered NWs are obtained for a wide range of growth conditions. Besides, it is found that H(2) plays an important role in the parasitic axial growth of the SiNWs. Namely, H(2) inhibits the radial growth and contributes dramatically to increasing the SiNW defects.     

Wafer-level site-controlled growth of silicon nanowires by Cu pattern dewetting

An approach for the wafer-level synthesis of size- and site-controlled amorphous silicon nanowires (α-SiNWs) is presented in this paper. Microscale Cu pattern arrays are precisely defined on SiO₂ films with the help of photolithography and wet etching. Due to dewetting, Cu atoms shrink to the center of patterns during the annealing process, and react with the SiO₂ film to open a diffusion channel for Si atoms to the substrate. α-SiNWs finally grow at the center of Cu patterns, and can be tuned by varying critical factors such as Cu pattern volume, SiO₂ thickness, and annealing time. This offers a simple way to synthesize and accurately position a SiNW array on a large area.

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Single-crystal CdSe nanowires prepared via vapor-phase growth assisted with silicon

Hexagonal cadmium selenide (CdSe) nanowires, with diameter around 20 nm, were synthesized using a simple vapor-phase growth. Silicon (Si) powder acts as a source material assisting the synthesis, which is very important to the formation of the CdSe nanowires. We also suggest that self-catalysis at the Cd-terminated (0001) surface, together with the assistance action of Si, leads to the formation of wire-like structures to be formed. Meanwhile, the assistance of Si is responsible for the fineness and uniformity of the CdSe nanowires. The possible growth mechanism of the CdSe nanowires is proposed, and the optical property of the as-grown CdSe nanowires is characterized.