128×128-element IrSi Schottky-barrier focal plane arrays forlong-wavelength infrared imaging

The fabrication and initial laboratory test of 128×128-element focal plane arrays integrating IrSi detectors with a cutoff wavelength of ~9.4 μm and surface-channel CCD readout circuitry are presented. This extends thermal imaging with silicide Schottky-barrier detector arrays into the long-wavelength infrared (LWIR) spectral band (8 to 14 μm) for the first time. High-quality imagery with a minimum resolvable temperature of ~0.3 K is obtained     

256×256 hybrid HgCdTe infrared focal plane arrays

Hybrid HgCdTe 256×256 focal plane arrays have been developed to meet the sensitivity, resolution, and field-of-view requirements of high-performance medium-wavelength infrared (MWIR) imaging systems. The detector arrays for these hybrids are fabricated on substrates that reduce or eliminate the thermal expansion mismatch to the silicon readout circuit. The readouts are foundry-processed CMOS switched-FET circuits that have charge capacities greater than 10⁷ electrons and a single video output capable of 20-MHz data rates. The high quantum efficiency, tunable absorption wavelength, and broad operating temperature range of these large HgCdTe staring focal plane arrays give them significant advantages over competing sensors. The mature Producible Alternative to CdTe for Epitaxy-1 (PACE-1) technology, using sapphire detector substrates, has demonstrated 256×256 MWIR arrays with mean laboratory noise equivalent temperature difference (NETD) of 9 mK for a 4.9-μm cutoff wavelength, 40-μm pixel size, and 80-K operating temperature. RMS detector response nonuniformities are less than 4%, and pixel yields are greater than 99%. The newly developed PACE-3 process uses silicon for the detector substrate to eliminate completely the thermal mismatch with the silicon readout circuit. It has the potential for similar performance in even larger array sizes. A 640×480 hybrid array is under development     

15-μm 128×128 GaAs/AlxGa1-xAsquantum well infrared photodetector focal plane array camera

In this paper, we discuss the development of very sensitive, very long wavelength infrared GaAs/Al_xGa_1-xAs quantum well infrared photodetectors (QWIPs) based on bound-to-quasi-bound intersubband transition, fabrication of random reflectors for efficient light coupling, and the demonstration of a 15-μm cutoff 128×128 focal plane array imaging camera. Excellent imagery, with a noise equivalent differential temperature (NEΔT) of 30 mK has been achieved     

不致冷红外焦平面列阵

分析比较了四种红外焦平面列阵（ＩＲＦＰＡ）的特征，阐述了不致冷ＩＲＦＰＡ具有价格低廉和使用方便的明显优势，对三种不致冷ＩＲＦＰＡ作了介绍，特别是辐射热微测量主地ＩＲＦＰＡ是当前研制重点，将给夜视热像系统带来革命性变化，最后列举了红外焦平面列阵在非军事领域的应用。     

160×128元多量子阱长波红外焦平面探测器件研制

报道了新研制出的160×128元GaAs/AlGaAs多量子阱长波红外焦平面器件.使用MBE的方法在半绝缘的GaAs衬底上生长器件结构;开发了用普通光刻技术和离子束刻蚀法制备2D光栅技术,以及探测器芯片与读出电路互联技术.在77 K时测试,器件的平均峰值探测率D*λ=1.28×1010 cmW-1Hz1/2,峰值波长为λp=8.1μm,截止波长为λc=8.47μm.器件的非盲元率≥98.8%,不均匀性10%.     

Long wavelength infrared 128×128 AlxGa1-xAs/GaAs quantum well infrared camera and imaging system

The authors discuss the development of a long-wavelength (8-14-μm) 128×128 Al_xGa_1-xAs/GaAs multiquantum well infrared (MQW IR) imaging system. Highly uniform, high-yield GaAs focal plane arrays, incorporating an integral grating structure for efficient optical coupling, were hybridized to CMOS multiplexers. Excellent imagery, with low noise, a noise equivalent differential temperature (NEΔT) of less than 10 mK, and a high image contrast signal-to-noise ratio, has been achieved. It is shown that figures of merit concerning array uniformity, such as yield, NEΔT, and maximum deliverable charge to the CMOS multiplexer are much more relevant variables that affect image quality than D*     

混成式热释电非制冷红外焦平面探测器研究

热释电非制冷红外焦平面探测器在军民领域具有广阔的应用前景.为了实现探测器的国内工程化研制,采用混成式技术,成功研制了基于锆钛酸铅(PZT)铁电陶瓷材料,像元尺寸为35 μm×35μm,列阵规模为320×240元的非制冷红外焦平面探测器.通过自主设计,研发的非制冷焦平面测试平台,得到了此器件的基本性能参数平均电压响应率1.1×105V/W,平均探测率5.6×107cm·Hz1/2·W-1,并实现了该探测器热成像.结合实际的研究工作,较为系统地介绍和讨论了热释电非制冷红外焦平面研制过程中各项关键技术.在器件光电响应测试数据分析的基础上,进一步提出下一阶段研究工作的重点和器件性能优化的方向.     

A 128×128-pixel standard-CMOS image sensor with electronicshutter

A 128×128-pixel image sensor with a 20 s-10^-4 s electronic shutter has been integrated in a 1.2-μm digital CMOS technology. The pixel cell consists of four PMOS transistors and a photodiode with antiblooming suppression. Each pixel measures 24 μm by 24 μm and has a fill factor of 25%. Current is used to transfer pixel signals to the column readout amplifiers in order to minimize voltage swings on the highly capacitive column lines. Correlated double sampling is used to reduce intracolumn fixed pattern noise. The saturation voltage is 470 mV. The peak output signal to noise ratio is 45 dB, and the optical dynamic range is 56 dB. The frame transfer rate is 1.7 ms per frame     

非制冷红外焦平面非均匀性测试技术研究

非制冷焦平面的非均匀性和噪声是限制非制冷红外热成像系统性能的主要因素.研制了非制冷红外焦平面的非均匀性测试系统,系统由黑体、红外光学系统、焦平面驱动电路、热电温控电路、信号处理系统、计算机和测试软件等构成,利用该系统可以将微测辐射热计非制冷红外焦平面各像元的输出信号数字化后传输给计算机,实现对焦平面的非均匀性测试和盲元统计,并给出了实验结果.     

凝视型红外焦平面组件的军事应用

随着军事技术的发展,对用于侦察和制导的红外探测 器的要求也越来越高。目前,红外探测器已发展到了第三代－－红外焦平面列阵。文中着重讨论了凝视红外焦平面的概念,并介绍了其与机械扫描系统相比应用于军事目的的优点,如提高了信噪比和热灵敏度、结构紧凑、更好地发挥探测器的快速 性、易于信号处理和可批量生产等。针对各个波长范围内的应用情况,对如何利用现有技术发展红外凝视系统提出了几点建议。     

Hybrid infrared focal plane signal and noise model

A signal and noise model is presented for an infrared sensor with an advanced hybrid focal plane that uses a CMOS readout integrated circuit (ROIC). Part of the motivation for this work is to present a clear foundation for some of the well-known practical and useful rules that apply to infrared sensors in use today. The model shows explicitly how a correlated double sampler (CDS) eliminates kTC noise, explains the interesting dependence of output 1/f noise on integration and epoch times, and is generic enough to treat a large class of ROIC preamps. A sensor with a direct injection readout is treated as an example and user-friendly formulas are listed and used to calculate sensor signal and noise     

二极管原理非制冷红外焦平面阵列的集成设计

面向非制冷红外成像的低成本高性能应用,二极管原理的红外焦平面阵列的设计和工艺实现得到研究和发展.焦平面和读出电路的设计集成以及CMOS和MEMS工艺集成是此项技术的研究重点.基于SOI的二极管原理焦平面阵列在低成本的利用CMOS工艺实现大规模阵列集成方面有很大的优势.读出电路是基于标准CMOS工艺进行设计的.320×2...     

128×128元氮化镓紫外焦平面读出电路的设计与封装研究

随着GaN基紫外材料的成熟,GaN基紫外探测器迅速发展,半导体紫外探测技术成为继红外和激光探测技术后发展起来的又一新型光电探测技术.GaN基紫外探测器以其固有的量子效率高、可靠性高、使用方便等特点,将在紫外探测、预警、天际及地空通信和紫外弱光成像系统等领域发挥重要作用.读出电路作为紫外焦平面信号调理与输出部分对紫外焦平面组件性能起至关重要的作用.封装是通用传感器组件应用前的一道重要工序,合理的封装结构对组件及系统是必要的.描述了128×128元紫外焦平面读出电路与封装的设计过程,用Cadence与Hspice软件仿真分析了3×3元读出电路的工作点以及封装要考虑的热耗散问题,最后给出了读出电路的工作点与合理封装形式的建议.文中提到的128×128元50 μm×50μm紫外读出电路已设计完成并采用Charter线宽为0.35 μm的2P4MCMOS工艺流片.     

Fabrication of 128×128 element optical switch array by micromachining technology

Polycrystalline VO₂ thin films were obtained on Si substrates by ion beam sputtering deposition and annealing in flowing Ar gas. SEM images indicate that VO₂ thin films were grown into compact surfaces. Four-probe measurements indicated that the VO₂ thin films own good electrical homogeneity. After the films' production, micromachining technology including lithography, reaction ion etching and metallization connection processes was used to produce the optical switch array. As a result, the 128×128 element optical switch array was achieved.     

Integrated-optic 1×128 power splitter with multifunnelwaveguide

An integrated-optic 1×128 power splitter is demonstrated. It is composed of a slab waveguide, funnel-shaped waveguides, and output waveguides. Input light from a fiber is diffracted in the slab waveguide and received by funnel waveguides. To achieve uniform power splitting, the width of the funnel waveguides is designed based on the Gaussian diffraction pattern; that is the funnel widths increase progressively away from the center. The splitter is fabricated with GeO₂-doped silica waveguides on silicon. The 1×128 splitting is achieved with a low excess loss of 2.3 dB and a small standard deviation of 0.63 dB     

红外焦平面探测器测试数据的校正

针对红外焦平面探测器现有测试方法的不足,讨论了像元辐射通量的校正方法,推导的校正公式具有相当高的精度,适用于不同规格的圆形冷屏探测器.介绍了凝视红外焦平面探测器测试数据的校正研究,对Sofradir中波320×256探测器的输出信号数据进行了校正,并对校正结果进行了讨论.校正因子与真实解(数值解)十分接近,66个数据的平均相对误差为0.04%.校正后的曲线十分平直,信号的非均匀性有较大改善,由校正前的3.27%下降到1.33%,响应信号的平均值有所提高.为了真实地反映探测器的性能参数,特别是非均匀性,需要对像元辐射通量进行校正.     

红外焦平面阵列非均匀性校正方法的研究

介绍了几种基于定标法和场景法的红外焦平面阵列非均匀性校正方法,重点对神经网络自适应校正方法进行了理论分析、算法改进和数据仿真.     

红外焦平面阵列非均匀性校正技术的最新进展

面列阵红外焦平面探测器的非均匀性校正技术是正在探索的一项关键技术。介绍了近期国内外发展的红外焦平面阵列非均匀性校正技术：基于场景的代数算法、基于干扰抵消原理的自适应校正法和基于低次插值的多点校正法。     

红外焦平面阵列剩余非均匀性的计算

从理论、计算方法和计算结果等方面分析了已有的三种剩余非均匀性(即剩余误差)计算方法的不足,根据探测器非线性响应原理,提出了一种新的方法。以实验数据对有关方法进行了验证,结果表明新的方法更为简单且更符合实际。与以前理论比较,推导出了近似公式。