镁锌铁氧体磁芯的工艺研究

针对镁锌铁氧体与镍锌铁氧体磁芯在高频性能和机械强度方面存在的差异,对材料配方,烧结工艺,制料工艺等方面进行了调整。结果表明:起始磁导率μi为50~2000时,镁锌铁氧体磁芯完全可替代镍锌铁氧体磁芯,从而大幅降低原材料成本。     

元器件与组件

铁氧体磁芯的大电流电感器 SPE-400系列有20种水平安装的大电流电感器,它直接将导线绕在铁氧体磁芯上。电感值从0.9μH(饱和电流达13Adc)到1000μH(饱和电流达0.42Adc)。     

铁氧体磁芯的EMI抑制特征研究

小型铁氧体磁芯已被广泛用于电子设备的主要和外部电缆上，但是目前尚不知铁氧体磁芯是如何有效地抑制EMI电流和在实际应用中如何使用铁氧体磁芯。因此，在进行理论和实验分析的基础上，开发了一种用于评估实际铁氧体磁芯EMI抑制能力的方法。首先，推荐使用传导线型测量系统来模拟适应性测试设备以测量传导发射。然后，推导出理论表达式用以评估铁氧体磁芯的EMI抑制特性。此外，为进一步验证这些理论方程式的正确性，还使用一模拟EUT和市场上可购买的两个实际EUT，即，一个桌面pc和一个微波烤箱进行实验。     

多孔铁氧体磁芯及其应用

自从1950年中国人王安在美国首先试制成功了具有矩形磁滞回线的单孔磁芯以后,不久就大量地应用在数字计算机、自动、运动以及通信技术中.尽管单孔磁芯在某些方面比电子管、晶体管具有很多的优点,但是由于它只有一个磁路的作用,因此不能代替多个元件的工作.多孔铁氧体磁芯的出现,便解决了这个矛盾问题.1955年拉赫曼(Rajchnman)和罗无念试制成功了多孔铁氧体磁芯.这种多孔磁芯不仅具有单孔磁芯的功用,而且能够实现几个以至几十个元件的工作.据有关文献的介绍,一个六孔磁芯,能够代替72个电子管或15个晶体管的工作.目前国外多孔磁芯的品种     

电感测量技术在E型软磁铁氧化磁芯分选上的应用

简述国内外对软磁铁氧体磁芯分选技术的现状,重点介绍运用电感测量技术对软磁铁氧体磁芯测量分选的原理、方法及特点。     

NiZn铁氧体对叠层型薄膜变压器传输特性的改善

展示了一种新型的基于硅IC工艺的叠层型螺旋薄膜变压器,通过分析铁氧体的特性和磁谱,设计了薄膜变压器结构和制造工艺。采用光刻技术制备形状相同且完全叠合的初级与次级线圈,提高线圈耦合效率。空心变压器两层线圈之间采用SiO2作为绝缘层;磁芯变压器的两层线圈之间采用射频磁控溅射NiZn铁氧体薄膜作为绝缘层。在10MHz～20GHz的频率范围内分别对空心和磁芯叠层型螺旋薄膜变压器进行了测试,测试结果表明:磁芯薄膜变压器的带宽和传输效率都大于空心薄膜变压器;铁氧体薄膜能大幅度提高薄膜变压器的传输效率;匝数比为10∶10的磁芯薄膜变压器传输效率在频率9.85GHz时达到78.0%的最大传输效率。     

一种大功率宽频带低损耗定向耦合器的设计与实现

根据传输线变压器串并联同时耦合的原理,设计了一种13dB铁氧体定向耦合器,该定向耦合器是用漆包线绕在射频铁氧体磁芯上做成.具有尺寸小、结构简单和频带宽等优点,工作范围在100～400MHz.对其参数进行了理论计算和测量,满足设计要求.经过实际应用,验正了设计方法的可行性.     

铁氧体及感性元件在抑制电磁干扰中的应用

描述铁氧体磁性材料的基本特性及利用其特性来抑制电磁干扰的基本原理。介绍利用铁氧体磁性材料制成的各种抑制电磁干扰的感性元件及抗EMI磁芯。着重讨论如何选择铁氧体磁性材料及各种抑制电磁干扰的感性元件及磁芯。     

软磁铁氧体磁芯的自动分选

概述了软磁铁氧体磁芯国内外目前自动化分选的现状 ,重点介绍了YY2 751磁芯自动分选系统的特点 ,展望了我国磁芯机械化、自动化分选的前景     

铁氧体电波吸收板透射和反射特性研究

用三种不同磁导率 (μr1 、μr2 、μr3 )的铁氧体电波吸收剂 ,制成 10 0 m m× 10 0 mm双层结构的电波吸收板 ,在 8～ 12 GHz频段测得其透射吸收特性为 :涂层厚度 1.80 mm,吸收量 At=12 .2 d B;涂层厚度 1.15～ 1.85mm,吸收量 At>9d B。反射吸收特性为 :吸收量 Af=2 3d B,10 d B带宽 4GHz,匹配厚度 1.17mm。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.