毫米波CMOS集成电路的现状与趋势

随着深亚微米和纳米CMOS工艺的成熟,设计和实现低成本的毫米波CMOS集成电路已成为可能.简述了毫米波CMOS技术的发展现状,介绍了毫米波CMOS集成电路的关键技术,即晶体管建模和传输线建模,并给出了毫米波CMOS电路的最新进展和发展趋势.     

Millimeter-Wave Integrated Circuits

Monolithic millimeter-wave integrated circuits have been designed and fabricated on semi-insulating GaAs substrates using microstrip transmission lines. Circuits using hybrid techniques have also been constructed on quartz and ceramics. This paper shows that microstrip-line integrated circuits are feasible at millimeter-wave frequencies. Circuit functions have been constructed and tested in the 25- to 100-GHZ range. The loss in microstrip line on semi-insulating GaAs was found to be less than 0.3 dB//lambda/. Couplers from waveguide to microstrip have been made with transmission losses less than 0.5 dB. Monolithic integrated detectors showed 5-dB better sensitivity than a 1N53 diode in a Philips detector mount. Monolithic diodes delivered 1.5 mW at 28 GHz. The results are encouraging and a fully monolithic integrated receiver is under development.     

Millimeter-Wave Integrated Circuits

Monolithic millimeter-wave integrated circuits have been designed and fabricated on semi-insulating GaAs substrates using microstrip transmission lines. Circuits using hybrid techniques have also been constructed on quartz and ceramics. This paper shows that microstrip-line integrated circuits are feasible at millimeter-wave frequencies. Circuit functions have been constructed and tested in the 25- to 100-GHz range. The loss in microstrip line on semi-insulating GaAs was found to be less than 0.3 dB/ /spl lamda/. Couplers from waveguide to microstrip have been made with transmission losses less than 0.5 dB. Monolithic integrated detectors showed 5-dB better sensitivity than a 1N53 diode in a Philips detector mount. Monolithic diodes delivered 1.5 mW at 28 GHz. The results are encouraging and a fully monolithic integrated receiver is under development.     

高速宽带应用的毫米波CMOS集成电路

近年来,随着可应用于几个Gb/s无线通信的非许可60GHz频段的开放,低成本的毫米波单片集成电路已成为研究和开发的热点。论文简述了CMOS射频集成电路的发展历史,介绍了IEEE 802.15.3工作组提出的60GHzISM毫米波工作频段的特性,阐述了毫米波CMOS集成电路设计的若干关键技术。     

An Ultra-Low-Power Integrated RF Energy Harvesting System in 65-nm CMOS Process

In recent years, radio frequency (RF) energy harvesting systems have gained significant interest as inexhaustible replacements for traditional batteries in RF identification and wireless sensor network nodes. This paper presents an ultra-low-power integrated RF energy harvesting circuit in a SMIC 65-nm standard CMOS process. The presented circuit mainly consists of an impedance-matching network, a 10-stage rectifier with order-2 threshold compensation and an ultra-low-power power manager unit (PMU). The PMU consists of a voltage sensor, a voltage limiter and a capacitor-less low-dropout regulator. In the charge mode, the power consumption of the proposed energy harvesting circuit is only 97 nA, and the RF input power can be as low as \(-\)21.4 dBm \((7.24\,\upmu \hbox {W})\). In the burst mode, the device can supply a 1.0-V DC output voltage with a maximum 10-mA load current. The simulated results demonstrate that the modified RF rectifier can obtain a maximum efficiency of 12 % with a 915-MHz RF input. The circuit can operate over a temperature range from \(-40\hbox { to }125\,^{\circ }\hbox {C}\) which exceeds the achievable temperature performance of previous RF energy harvesters in standard CMOS process.     

A Millimeter-Wave 90-nm CMOS Self-Mixing Frequency Divider

This letter presents a millimeter-wave 90 nm CMOS divide-by-four frequency divider using self-mixing technique. The output of the push-push oscillator mixes with the input signal, and the resulting intermediate frequency signal locks the fundamental oscillation frequency of the oscillator at exactly one-fourth of the input signal frequency. The frequency divider is implemented in TSMC 90 nm 1P9M digital CMOS technology and the overall die size is 0.91 mm $times,$ 0.53 mm. For low-power mode, the divider consumes only 0.8 mW with a 0.8 V supply voltage, and the measured locking range is 300 MHz. For normal mode, the divider consumes 2 mW with a 1 V supply, and the locking range is extended to 1100 MHz. The operating range of the divider covers from 46.1 to 52.8 GHz with varactor tuning and band switching.      

Nonradiative Dielectric Waveguide for Millimeter-Wave Integrated Circuits

A nonradiative dielectric waveguide is proposed in which dielectic strips are sandwiched between two parallel metal plates separated by a distance smaller than half a wavelength. Though the structure is substantially the same as that of the H-guide, it is based on a quite different principle of operation. This dielectric guide is particularly applicable in millimeter-wave integrated circuits, since it is not only small in size, but also allows bends and junctions to be incorporated into the circuits with very little radiation and interference. A design diagram is given. Losses and coupling coefficients of the strips are calculated, as well. Some basic circuit components, such as 90° and 180° bends and T-junctions, made of polystyrene strips, are measured to confirm their usefulness in millimeter-wave integrated circuits.     

Channel Dropping Filter for Millimeter-Wave Integrated Circuits

The dielectric waveguide structure finds various applications in integrated circuits for the millimeter-optical-frequency range. Many passive and active devices, using dielectric waveguide, have been developed. From the viewpoint of Iow-loss property, the dielectric rectangular waveguide seems to be more suitable for integrated circuits. This paper describes the design method and experimental results for channel dropping filter using dielectric rectangular waveguide. Some experimental investigations of the dielectric rectangular waveguide properties are also presented. The channel dropping loss of the filter is 1.5 dB at a channel center frequency of 52 GHz with a 180-MHz 3-dB bandwidth. Experimental results agree fairly well with the theoretical calculations.     

A Leakage-Compensated PLL in 65-nm CMOS Technology

A leakage compensation technique is presented to compensate the on-chip loop filter leakage for phase-locked loops in 65-nm complementary metal-oxide-semiconductor technology. Using the leakage compensation technique, the measured root-mean-square jitter is reduced to 3.10 ps when the output frequency is 950 MHz. This chip consumes 10 mW, and the active area is 0.14 mm².     

A Periodic Branching Filter for Millimeter-Wave Integrated Circuits

A number of passive and active devices using dielectric waveguides have been developed and find various applications in integrated circuits at the millimeter optical-frequency range. The design, theoretical considerations and experimental findings of a periodic branching filter using rectangular dielectric waveguides are described in this paper. Low insertion loss for the periodic branching filter with 850-MHz 3-dB bandwidth, less than 1.0 dB, is achieved in the frequency range from 77 to 85 GHz. Measured results are in good agreement with theoretical calculations.     

Modified Wilkinson Power Dividers for Millimeter-Wave Integrated Circuits

A modification of the Wilkinson power divider is presented that eases planar implementation while maintaining performance. By adding transmission lines between the resistor and the quarter-wave transformers of the traditional design, a range of valid solutions exists that meet the conditions of being reciprocal, isolated between the output ports, and matched at all ports. The proposed design is particularly useful at millimeter-wave frequencies where reduced physical dimensions make a circuit configuration suitable for low-cost package-level implementation difficult using traditional methods. Two frequency bands are demonstrated. At V-band, the circuit gives 0.3-dB excess insertion loss, 19-dB isolation, and 50% bandwidth. At the W-band, the circuit gives 0.75-dB excess insertion loss, 24-dB isolation, and 39% bandwidth.     

Frequency-Dependent Characteristics of Microstrip Discontinuities in Millimeter-Wave Integrated Circuits

A theoretical approach for the representation of microstrip discontinuities by equivalent circuits with frequency-dependent parameters is presented. The model accounts accurately for the substrate presence and associated surface-wave effects, strip finite thickness, and radiation losses. The method can also be applied for the solution of microstrip components in the millimeter frequency range.     

An SEU-Resilient SRAM Bitcell in 65-nm CMOS Technology

This paper presents an SEU-resilient 12 T SRAM bitcell. Simulation results demonstrate that it has higher critical charge than the traditional 6 T cell. Alpha and proton testing results validate that it has a lower soft error rate compared to the reference designs for all data patterns and supply voltage levels. The improvement in SEU tolerance is achieved at the expense of 2X area penalty.     

Inverted Strip Dielectric Waveguide for Millimeter-Wave Integrated Circuits

A new type of dielectric waveguide, which has a number of advantages over other previously available waveguide structures for millimeter-wave integrated circuits, is described. Dispersion characteristics and the field distributions in the waveguide are calculated using the concept of effective dielectric constant. Field distributions have been measured in the 80-GHz range in order to check the accuracy of the analytical results. This measurement has been done using a novel experimental technique, which should also be applicable to many other millimeter-wave waveguides and components.     

Insulated Nonradiative Dielectric Waveguide for Millimeter-Wave Integrated Circuits

An improved version of the nonradiative dielectric waveguide (NRD-guide), called an insulated nonradiative dielectric waveguide, is proposed for millimeter-wave integrated circuits. This dielectric waveguide can overcome some difficulties which arise when high dielectric material is used in the NRD-guide. Guide wavelengths and transmission losses were measured at 50 GHz and compared with theory. In addition, some basic circuit components such as bends, ring resonators, chip resonators, and T-junctions were fabricated on the basis of the insulated NRD-guide and tested to confirm their usefullness in millimeter-wave integrated circuits. The fabricated components operated as expected without suffering from any appreciable radiation at curved sections and discontinuities.     

CMOS集成电路的抗辐射设计

随着商业微电子器件抗辐射能力的提高,使得对专用集成电路(ASIC)从设计上进行抗辐射加固成为可能.本文介绍了CMOS器件的抗电离辐射的主要加固设计方法,认为在商业工艺上可以获得低成本的中等复杂程度和耐辐射能力的专用集成电路(ASIC).     

Electronic Phase Shifter for Millimeter-Wave Semiconductor Dielectric Integrated Circuits

A new system is proposed for millimeter-wave integrated circuits. It is suggested that high-resistivity silicon be used as a medium for a dielectric waveguide. With the advent of high-resistivity silicon, propagation can occur with relatively low Ioss. Furthermore, since the medium is a semiconductor compatible with active devices, it is proposed that active devices can be constructed directly in the semiconductor dielectric guide or appendaged directly on the surface. The basic approach is similar to that used in integrated optics, except that the medium for millimeter-wave guidance is a semiconductor and the control devices rely on conductivity modulation rather than on electrooptical effects. Some particular devices suggested are oscillator, mechanical and electronic phase shifters, amplitude modulators (switches), and detectors. The first of such devices investigated has been the electronic phase shtiter. Related theory and experiments are reported here. In addition, preliminary results on oscillators imbedded in a dielectric resonator are presented.     

Design of Dielectric Ridge Waveguides for Millimeter-Wave Integrated Circuits

All-dielectric ridge waveguides may be useful as elements of millimeter- and submillimeter-wave integrated circuits; A planar metallic V-coupler can be used to couple energy between the guide and small circuit elements such as diodes. Desirable characteristics in such a guide/coupler system are a) quasi-single mode propagation; b) low radiation loss in bendy c) low coupling loss between guide and devices and d) adequate physical strength. In this paper, we discuss the general problem of designing guides and couplers to obtain the desired characteristics. The principal method used is simulation in the range 2-7 GHz. We find that with good compromise designs, typical coupling loss between waveguide and a small device is about 1.4 dB, exclusive of dielectric loss and ohmic loss in the coupler.     

New Waveguide Structures for Millimeter-Wave and Optical Integrated Circuits

Some new dielectric waveguide structures suitable for millimeter-wave and optical integrated circuits are presented. A method of analyzing wave propagation in these guides is developed by assuming simple field distribution and approximating the various regions of the guides in terms of effective dielectric constants. The mathematical formulation utilized results in simple eigenvalue equations from which the dispersion characteristics of the waveguides are readily obtained. Experimental results are described and the agreement between theory and experiment is shown to be quite good.