Synchrotron Radiation Ti-k XANES Study of TiO2─Y2O3-Stabilized Tetragonal Zirconia Polycrystals

Valence state and site symmetry of Ti ions in TiO₂–Y₂O₃–ZrO₂ powders with 2 mol% Y₂O₃ and 5, 10, 15, and 20 mol% TiO₂, respectively, are studied by X-ray absorption near-edge spectroscopy (XANES). Tetravalent Zr⁴⁺ ions are replaced predominantly by Ti⁴⁺ ions. Within the solubility region of Ti ions, a subsequent displacement of Ti ions from the center of symmetry is observed with increasing TiO₂ content in TiO₂–Y₂O₃-stabilized tetragonal ZrO₂ polycrystals (Ti-Y-TZP) under investigation. This behavior cannot be interpreted with a random substitution of Ti⁴⁺ ions on Zr⁴⁺ lattice sites. On the contrary, this correlation between the TiO₂ content in Ti-Y-TZP and the shift of Ti ions indicates an increasing interaction between the Ti ions with growing TiO₂ content, caused by a subsequent clustering of Ti ions.     

Influence of TiO2 on Properties of Glasses in the System K2O–PbO–SiO2–TiO2 and Its Relation to Structure

By a progressive weight percent substitution of TiO₂ for SiO₂ at various rations of concentration of K₂O and PbO, the entire region of glass formation in the quaternary system K₂O–PbO–SiO₂–TiO₂ was covered with 51 glass compositions. The properties of these glasses were determined and studied with respect to the role of TiO₂ in the system. The results indicated that the dielectric constant increased progressively with increasing TiO₂ concentration whereas the dissipation factor showed an overall decrease, when measured at 1 Mc and 25°C. Density and the refractive index increased progressively with increasing TiO₂ concentration but deviated from the additive relation. Chemical durability, expansivity, and softening temperature vs. composition curves showed definite inflections. The effect of TiO₂ on oxygen packing indicated that Ti⁴⁺ strengthens the network in lower concentrations and weakens the network in higher concentrations in this system. It appears to be likely that Ti⁴⁺ changes its coordination number form 4 to 6.     

Physical Properties and Structure of Rf-Sputtered Amorphous Films in the System Ti02-Si02

Amorphous films in the system Ti0₂-Si0₂ were prepared by rf sputtering and their density, refractive index, and thermal expansion were measured. Also, the silicon Kα and titanium Kβ band emission spectra were obtained by X-ray emission spectroscopy in order to determine the coordination state of silicon and titanium ions in these amorphous films. The density and refractive index increased, but not proportionally, with increasing Ti0₂ content. On the other hand, a minimum was observed in the thermal expansion coefficient at =15 mol% Ti0₂. The coordination state of silicon ions in the amorphous films did not change with Ti0₂ content. However, the coordination number of titanium ions changed from 4 to 6, depending on Ti0₂ content. These results indicate that, in amorphous films in the system Ti0₂-Si0₂, the change of the coordination state of titanium ions has an important effect on physical properties, such as volume, molar refractivity, and thermal expansion.     

Co-Additions of TiO2 and SiO2 Crystalline Fillers to Tailor the Properties of BaO–ZnO–B2O3–SiO2 Glass for Application to Barrier Ribs of Plasma Display Panels

The influence of co-additions of crystalline TiO₂ and SiO₂ fillers (10 wt% addition in total) to BaO–ZnO–B₂O₃–SiO₂ glass on resultant properties was investigated from the viewpoint of applying the material to the barrier ribs of plasma display panels. The substitution of SiO₂ for TiO₂ reduced the dielectric constant significantly, while it maintained high optical reflectance and appropriate coefficient of thermal expansion (CTE) in the case when TiO₂ alone was used. A 5–7.5 wt% SiO₂ addition with 2.5–5 wt% TiO₂ under the constraint of 10 wt% total fillers demonstrated an optical reflectance of about 55%, a CTE of about 8.3 × 10⁻⁶ K⁻¹ (compatible with glass panels), and a dielectric constant of about 7.5, which are promising properties for the barrier rib application.     

Properties and Network Constitution of rf-Sputtered Amorphous Films in the System Silicon Dioxide–Aluminum Orthophosphate

Amorphous films in the system SiO₂–AlPO₄ were prepared by means of the rf-sputtering method, and their physical properties, such as density, refractive index, and temperature coefficient of Young's modulus, and infrared spectra were measured. Also, the K α X-ray emission spectra of silicon and aluminum were measured in order to investigate the coordination state of these cations in the amorphous films. The density and the refractive index were close to those of amorphous SiO₂ and AlPO₄ and the compositional dependence showed a small deviation from linearity. The temperature coefficients of Young's modulus were positive for all of the samples. The infrared absorption spectra of all of the samples were similar to those of SiO₂ glass and amorphous AlPO₄ film, and there was no evidence of the presence of P═O bonds. The coordination states of silicon and aluminum ions in the present amorphous films were the same as those in fused silica and AlPO₄ crystal, respectively. The results of the properties, infrared absorption spectra, and X-ray emission spectra suggest that SiO₄ tetrahedrons and AlO₄–PO₄ connecting tetrahedral dimers constitute the network of the present amorphous films. A small deviation of the physical properties from an additive rule was thought to result from the difference in the bond character between the newly formed Si–O–Al and Si–O–P bonds and the bonds in the end members, Si–O–Si and Al–O–P.     

Nanostructure of TiO2 Nano-Coated SiO2 Particles

We characterized SiO₂–TiO₂ nano-hybrid particles, prepared using the sol–gel method, using high-resolution transmission microscopy. A few nanometer-ordered TiO₂ anatase crystallites could be observed on the monodispersed SiO₂ nanoparticle surface. The quantum size effect of the TiO₂ anatase crystallites is attributed to the blue shift of the absorption band. The rough surface of the SiO₂–TiO₂ nano-hybrid particles was derived from the developed growth planes of the TiO₂ anatase crystallites, grown from fully hydrolyzed Ti alkoxide that did not react with acetic acid during the crystallization process at 600°C thermal annealing.     

Coordination and Bond Character of Silicon and Aluminum Ions in Amorphous Thin Films in the System SiO2-Al2O3

The coordination and bond character of the cations in amorphous SiO₂-Al₂O₃ films prepared by rf sputtering were examined by studying chemical shifts in the SiK and AlK X-ray emission spectra. The coordination number of Si ions in these films was always 4, regardless of composition, whereas the average coordination number of Al ions changed from 4 to 5, depending onAl₂O₃ content. TheSi-O-Al bond type seemed to appear as Al₂O₃ was introduced into amorphous SiO₂ films or vice versa.     

Physical Properties and Structure of rf-Sputtered Amorphous Films in the System Al2O3–Y2O3

Amorphous films in the system Al₂O₃–Y₂O₃ were prepared by the rf sputtering method in the range of 0–76 mol% Y₂O₃, and their density, refractive index, and elastic constants were measured. All of the physical properties of the amorphous Al₂O₃–Y₂O₃ films had a similar compositional dependence; that is, they increased continuously, but not linearly with increasing Y₂O₃ content. To confirm the coordination states of aluminum and yttrium ions in the amorphous Al₂O₃–Y₂O₃ films, the Al K α X-ray emission spectra and the X-ray absorption near edge structures (XANES) were measured. The average coordination number of aluminum ions in the amorphous films containing up to about 40 mol% Y₂O₃ content was 5, that is a mixture of 4-fold- and 6-fold-coordinated states. In the region of more than about 50 mol% Y₂O₃, the fraction of the 6-fold-coordinated aluminum ions increased with increasing Y₂O₃ content, while the results led to the conclusion that the coordination number of yttrium ions was always 6, regardless of composition. These results indicate that, in amorphous films in the system Al₂O₃–Y₂O₃, the change of the coordination state of aluminum ions has an important effect on physical properties.     

Phase Equilibria in the System CaO-TiO2–SiO2

Results of a study of phase equilibria in the system CaO–TiO₂–SiO₂ are presented. A prominent feature of the liquidus surface is a large two-liquid region which appears on the equilibrium diagram as a broad band extending from the SiO₂-CaO side to the SiO₂-TiO₂ side of the triangle. Evidence for the liquid immiscibility and the significance of the resulting large high-temperature liquidus region in silicate technology are discussed. Representative paths of crystallization of liquids in the system under equilibrium conditions are outlined. It is shown that solid solution in the system is virtually nonexistent except for the small-scale substitution of Ti⁴⁺ for Si⁴⁺ in wollastonite. Indices of refraction of glasses are given. Composition and temperature are listed for the twelve liquidus ternary invariant points.     

Sol–Gel Synthesis and Characterization of Ag and Au Nanoparticles in SiO2, TiO2, and ZrO2 Thin Films

Silver and gold nanoparticles were synthesized by the sol–gel process in SiO₂, TiO₂, and ZrO₂ thin films. A versatile method, based on the use of coordination chemistry, is presented for stabilizing Ag⁺ and Au³⁺ ions in sol–gel systems. Various ligands of the metal ions were tested, and for each system it was possible to find a suitable ligand capable of stabilizing the metal ions and preventing gold precipitation onto the film surface. Thin films were prepared by spin-coating onto glass or fused silica substrates and then heat-treated at various temperatures in air or H₂ atmosphere for nucleating the metal nanoparticles. The Ag particle size was about 10 nm after heating the SiO₂ film at 600°C and the TiO₂ and ZrO₂ films at 500°C. After heat treatment at 500°C, the Au particle size was 13 and 17 nm in the TiO₂ and ZrO₂ films, respectively. The films were characterized by UV–vis optical absorption spectroscopy and X-ray diffraction, for studying the nucleation and the growth of the metal nanoparticles. The results are discussed with regard to the embedding matrix, the temperature, and the atmosphere of the heat treatment, and it is concluded that crystallization of TiO₂ and ZrO₂ films may hinder the growth of Ag and Au particles.     

Immiscibility Area in the System TiO2–ZrO2–SiO2

A furnace for use in conjunction with the X-ray spectrometer was developed which was capable of heating small powdered specimens in air to temperatures as high as 1850°C. This furnace was also used for the heating and quenching of specimens in air from temperatures as high as 1850°C. An area of two liquids coexisting between 20 and 93 weight % TiO₂ above 1765°± 10°C. was found to exist in the system TiO₂–SiO₂, which is in substantial agreement with the previous work of other investigators. The area of immiscibility in the system TiO₂–SiO₂ was found to extend well into the system TiO₂–ZrO₂–SiO₂. The two liquids were found to coexist over a major portion of the TiO₂ (rutile) primary-phase area with TiO₂ (rutile) being the primary crystal beneath both liquids. The temperature of two-liquid formation in the ternary was found to fall about 80°C. with the first additions of ZrO₂ up to 3%. With larger amounts of ZrO₂ the change in the temperature of the boundary of the two-liquid area was so slight as to be within the limits of error of the temperature measurement. Primary-phase fields for TiO₂ (rutile), tetragonal ZrO₂, and ZrTiO₄ were found to exist in the system TiO₂–ZrO₂–SiO₂. SiO₂ as high cristobalite is known to exist in the system TiO₂–ZrO₂–SiO₂.     

A Study of the Phase Relations of ZrO2–TiO2 and ZrO2–TiO2–SiO2

The phase relations of the systems ZrO₂–TiO₂ and ZrO₂–TiO₂–SiO₂ were investigated. X-ray diffraction techniques served as the principal means of analysis. The binary system ZrO₂–TiO₂ was found to be one of partial solid solutions with no intermediate compounds. A eutectic point was found to exist at 50 to 55 weight % ZrO₂ and 1600°C. A preliminary investigation of the ternary system ZrO₂–TiO₂–SiO₂, although not extensive, resulted in a better understanding of this system, with a fairly accurate location of some of its boundary lines. A eutectic point was located at 2% ZrO₂, 10% TiO₂, and 88% SiO₂ at approximately 1500°C.     

Effects of the Addition of Different Types of Fillers on the Properties of BaO–ZnO–B2O3–SiO2 Glass Composites for Application to Barrier Ribs of Plasma Display Panels

Various types of crystalline ceramic fillers (TiO₂, ZrO₂, Al₂O₃, MgO, and cordierite) were added to BaO–ZnO–B₂O₃–SiO₂ (BZBS) glass (5–20 wt%), and the resultant dielectric constant, coefficient of thermal expansion (CTE), and optical reflectance were investigated for the application of the composites to the barrier ribs in plasma display panels. All the investigated fillers were partially dissolved into the glass at the fabrication temperature (575°C), and the residual fillers were aligned along the boundaries of sintered glass frits. By considering all aspects of the properties, the addition of TiO₂ fillers of about 10 wt% to BZBS glass was the most desirable of the types of fillers investigated. The addition of TiO₂ filler (10 wt%) yielded 61% in optical reflectance, 8.3 × 10⁻⁶ K^–1 in coefficient of thermal expansion, and 15.5 in dielectric constant, which were properties comparable with the currently used Pb-based barrier ribs.     

Sol–Gel-Processed SiO2/TiO2/Methylcellulose Composite Materials for Optical Waveguides

SiO₂–TiO₂–methylcellulose (MC) composite materials processed by the sol-gel technique were studied for optical waveguide applications. Dense, crack-free and homogeneous films as thick as 2 μm were obtained via the organic binder MC-assisted sol–gel process and single coating with low-temperature treatment. Light waveguiding in such hybrid film was demonstrated at a wavelength of 650 nm. About 1.1 dB/cm or lower propagation loss for the SiO₂ (80 mol%)–TiO₂ (20 mol%)–MC (22 wt%) film can be achieved. The effects of thermal treatment on the structure and properties of the gel films were also investigated.     

Titanium Diffusion into (K0.5Na0.5)NbO3 Thin Films Deposited on Pt/Ti/SiO2/Si Substrates and Corresponding Effects

Lead-free (K_0.5Na_0.5)NbO₃ (KNN) thin films were prepared on Pt/Ti/SiO₂/Si substrates by a sol–gel processing method, and titanium diffusion from the substrates into the KNN films under different thermal treatment conditions were investigated by the secondary ion mass spectroscopy depth profile and X-ray photoelectron spectroscopy surface analysis. Titanium diffusion was evident in all the KNN thin films, which was further aggravated not only by increasing the annealing temperature, but also surprisingly by higher ramping rate attributed to the resulting larger grain boundaries. The pronounced effects of the titanium diffusion and the resulting substitution of Ti⁴⁺ for Nb⁵⁺ with different valence states on the composition, structure, and electrical properties of the KNN thin films are analyzed and discussed. The results showed that the Ti diffusion from the substrate played a crucial role in affecting the structure and electrical properties of the ferroelectric KNN thin films deposited on Pt/Ti/SiO₂/Si substrate.     

Preparation of NiAl2O4/SiO2 and Co2+-Doped NiAl2O4/SiO2 Nanocomposites by the Sol–Gel Route

NiAl₂O₄/SiO₂ and Co²⁺-doped NiAl₂O₄/SiO₂ nanocomposite materials of compositions 5% NiO – 6% Al₂O₃– 89% SiO₂ and 0.2% CoO – 4.8% NiO – 6% Al₂O₃– 89% SiO₂, respectively, were prepared by a sol–gel process. NiAl₂O₄ and cobalt-doped NiAl₂O₄ nanocrystals were grown in a SiO₂ amorphous matrix at around 1073 K by heating the dried gels from 333 to 1173 K at the rate of 1 K/min. The formations of NiAl₂O₄ and cobalt-doped NiAl₂O₄ nanocrystals in SiO₂ amorphous matrix were confirmed through X-ray powder diffraction, Fourier transform infrared spectroscopy, differential scanning calorimeter, transmission electron microscopy (TEM), and optical absorption spectroscopy techniques. The TEM images revealed the uniform distribution of NiAl₂O₄ and cobalt-doped NiAl₂O₄ nanocrystals in the amorphous SiO₂ matrix and the size was found to be ∼5–8 nm.     

Fluoride Model Systems: II, The Binary Systems CaF2–BeF2, MgF2–BeF2, and LiF–MgF2

Data obtained by quenching, thermal, and high-temperature X-ray techniques are presented for the three binary systems CaF₂–BeF₂, MgF₂–BeF₂, and LiF–MgF₂. The systems CaF₂–BeF₂ and MgF₂–BeF₂ are presented as weakened models of the systems ZrO₂–SiO₂ and TiO₂–SiO₂, respectively. The compound CaBeF₄ is a model of ZrSiO₄ (zircon). New data obtained for the system LiF–MgF₂ explain many discrepancies among the results of previous authors. Solid solution is almost complete between LiF and MgF₂ at elevated temperatures, but a small gap occurs at the eutectic (735°C.) with extensive exsolution at lower temperatures.     

Degradation of Bioactive Polydimethylsiloxane–CaO–SiO2–TiO2 and Poly(tetramethylene oxide)–CaO–TiO2 Hybrids in a Simulated Body Fluid

It has been shown that polydimethylsiloxane (PDMS)–CaO–SiO₂–TiO₂ and poly(tetramethylene oxide) (PTMO)–CaO–TiO₂ hybrids form apatite on their surfaces in a simulated body fluid (SBF) and show mechanical properties similar to those of human cancellous bones. In the present study, changes, caused by soaking in SBF, were measured in the mechanical properties of PDMS–CaO–SiO₂–TiO₂ hybrids with different CaO and TiO₂ contents and PTMO–CaO–TiO₂ hybrids with different CaO contents. Significant decreases in the strength and strain at failure of the hybrids were observed for the PDMS–CaO–SiO₂–TiO₂ hybrids with high CaO or TiO₂ contents and PTMO–CaO–TiO₂ hybrids with a high CaO content after soaking in SBF for 4 w. This indicates that incorporation of a large amount of CaO component into the hybrids should result in the deterioration of the hybrids in the body environment.     

Correlation between Arrangement of Dielectric Layers and Microwave Dielectric Properties of Mg0.93Ca0.07TiO3−(Ca0.3Li0.14Sm0.42)TiO3 Ceramics

Effect of geometrical shape and induced thermal strain on the microwave dielectric properties of the layered structure ceramics of Mg_0.93Ca_0.07TiO₃ with (Ca_0.3Li_0.14Sm_0.42)TiO₃ was investigated as a function of the number of dielectric layers. The dielectric constant and the temperature coefficient of resonant frequency (TCF) were not changed significantly with the number of dielectric layers but only depended on the net compositional ratio. However, the dielectric loss quality was affected by the number of interfaces between dielectric layers, which had a partial composition inhomogeneity due to the diffusion of Mg²⁺ and Ti⁴⁺ ions. The dielectric loss quality also decreased with an increase of thermal strain induced to each dielectric layer.     

Preparation of 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 Thin Films Via a Polyvinylpyrrolidone-Assisted Aqueous Sol–Gel Process and Dielectric Properties

Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ (PMN–PT) thin films were prepared by spin coating using aqueous solutions of metal salts containing polyvinylpyrrolidone, where niobium oxide layers and lead—magnesium–titanium oxide layers were laminated on Pt(111)/TiO _x /SiO₂/Si(100) substrates and fired at 750° or 800°C. 250 ± 20 nm thick 0.7PMN–0.3PT thin films of a single-phase perovskite could be prepared, and the film fired at 750°C had dielectric constants and dielectric loss of 1900 ± 350 and 0.13 ± 0.03, respectively, exhibiting polarization-electric field hysteresis with a remanent polarization of 5.1 μC/cm² and a coercive field of 21 kV/cm.