300KeV氩离子辐照非晶态合金两代表面发泡形成

室温下，用３００ＫｅＶ氩离子辐照了非晶态合金Ｆｅ４０Ｎｉ４０Ｐ１２Ｂ８、Ｆｅ４０Ｎｉ４０Ｓｉ１２Ｂ８、Ｆｅ３９Ｎｉ３９Ｖ２Ｓｉ１２Ｂ８和Ｆｅ３９Ｎｉ３９Ｍｏ２Ｓｉ１２Ｂ８，研究了表面形貌随剂量的演变。在所研究的１．０×１０１７到５．０×１０１７离子／Ｃｍ２的剂量范围，表面形貌以发泡形貌为主，并观测到了两代表面发泡的形成，第二代表面发泡的直径与第一代发泡相比，明显减小。溅射自始至终影响着表面形貌，溅射对表面发泡的腐蚀抑制了剥落、层离等表面腐蚀的出现。当剂量增加到足以溅射掉第一代表面发泡时，针孔形成，针孔的密度随剂量增加而增加。     

300KeV氩离子辐照非晶态合金两代表面发泡形成

室温下，用３００ＫｅＶ氩离子辐照了非晶态合金Ｆｅ４０Ｎｉ４０Ｐ１２Ｂ８、Ｆｅ４０Ｎｉ４０Ｓｉ１２Ｂ８、Ｆｅ３９Ｎｉ３９Ｖ２Ｓｉ１２Ｂ８和Ｆｅ３９Ｎｉ３９Ｍｏ２Ｓｉ１２Ｂ３，研究了表面形貌随剂量的演变。在所研究的１．０×１０＾１７到５．０×１０＾１７离子／ｃｍ＾２的剂量范围，表面形貌以发泡形貌为主，并观测到了两代表面发泡的形成，第二代表面发泡的直径与第一代发泡相比，明显减小。油射自始至终影响着表面形     

B_4C-SiC/C复合材料高温自愈合抗氧化性能研究 Ⅱ复合材料结构变化与其自愈合抗氧化相关性研究

用扫描电镜观察了复合材料高温氧化后的表面形貌，通过对复合材料断面ＳＥＭ考察获得了复合材料氧化后表面陶瓷层的厚度，据此对复合材料氧化过程中的结构变化与其自愈合抗氧化的相关性进行了分析。结果表明：８００℃氧化时，复合材料表面的陶瓷层主要由Ｂ２Ｏ３／ＳｉＣ粒子组成，复合材料中Ｂ４Ｃ含量高及Ｂ／Ｓｉ比大时，可实现较好的自愈合抗氧化；１０００℃氧化时，ＢＳ２０１０和ＢＳ２０２０复合材料样品表面形成了熔融流动性好的硼硅酸玻璃相，有着良好的自愈合抗氧化性；１２００℃氧化时，随着复合材料中ＳｉＣ含量及陶瓷总含量的增加，复合材料（ＢＳ２０２０和ＢＳ１５３０）表面趋于形成致密的硼硅酸玻璃相，从而有利于高温自愈合抗氧化。     

B4C—SiC／C复合材料高温自愈合抗氧化性能研究：Ⅱ 复合材料结构变化 …

用扫描电镜观察了复合高温氧化后的表面形貌，通过对复合材料断面ＳＥＭ考察获得了复合材料氧化后表面陶瓷层的厚度，据此对复合材料氧化过程中的结构变化与其自愈合抗氧化的相关性进行了分析。结果表明；８００℃氧化时，复合材料表面的陶瓷层主要由Ｂ２Ｏ３／ＳｉＣ粒子组成，复合材料中Ｂ４Ｃ含量高及Ｂ／Ｓｉ比大时，可实现较好的自愈合抗氧化；１０００℃氧化时，ＢＳ２０１０和ＢＳ２０２０复合材料样品表面形成了熔融流动性好     

BP－SiC晶须的特性及显微结构研究

本文对稻壳合成的ＳｉＣ晶须（简称ＳｉＣｗ）中试产品进行了分析，结果表明：三种ＢＰ－ＳｉＣｗ的形貌及结构各具特点，ＢＰ－１ＳｉＣｗ表面粗糙，呈多节状；ＢＰ－３ＳｉＣｗ表面光滑平整，为完整β－Ｓｉｃ单晶；ＢＰ－ＳｉＣｗ介于两者之间，并含有一定量的弯晶。ＢＰ－ＳｉＣｗ的质量达到了美国、日本同类产品的水平。     

HL—1M装置硼化,硅化和锂化壁的出气特性

借助ＱＭＳ诊断技术，完成了ＨＬ－１Ｍ装置Ｂ化，Ｓｉ化与Ｌｉ化壁的出气特性的对比实验研究。ＧＤＣ期间，Ｈ２出气占支配地位，杂质分压与Ｈ２分压成正比，ＧＤＣ后的本底放气率较同时间烘烤去气后低；ＧＤＣ（Ｈｅ＋Ｈ２）是去除膜的有效方法；Ｂ化、Ｓｉ化和Ｌｉ化壁相比，托卡马了放电后的Ｈ２出量绋１：０．１３：０．２１。其中Ｂ化壁Ｈ２出气量主于ｓｓ壁，Ｓｉ化和Ｌｉ化壁则低于ｓｓ壁，出Ｈ２量／送Ｈ２量，ｓｓ壁为０．     

聚碳硅烷／二乙烯基苯的高温裂解

采用ＴＧ－ＤＴＡ、ＩＲ、ＸＲＤ、ＸＰＳ、ＳＥＭ等手段研究了聚碳硅烷（ＰＣＳ）／二乙烯基苯（ＤＶＢ）的高温裂解行为及其裂解产物的结构与性能。结果表明，ＰＣＳ／ＤＶＢ的裂解过程可分成５个阶段，其裂解产物主要由ＳｉＣ、ＳｉＯ２和Ｓｉ－Ｏ－Ｃ非晶网络及游离Ｃ组成，其中游离Ｃ的含量随ＤＶＢ的增加而增加，且对β－ＳｉＣ的结晶有一定的抑制作用，裂解产物的形貌为不发泡的致密结构。     

非晶态Ni—Si—B系合金在FeCl3溶液中的腐蚀行为

用失重法研究了几种Ｎｉ－Ｓｉ－Ｂ系合金在ＦｅＣｌ３溶液中腐蚀行为，分别考查了腐蚀速率与材料组分，表面状态，溶液温度，浓度及ｐＨ值的关系。结果表明：随着Ｎｉ含量增加，表面状态越粗糙，溶液浓度增加，温度升高，ＰＨ值降低，均将使腐蚀速率增加。     

氧注入损伤对6HSiC光学性质的影响

ＳｉＣ是一种重要的宽禁带半导体材料,在高温、高压、高功率及高频器件方面有重要的应用前景。ＳｉＣ中的离子注入无论在基础研究还是在器件工艺中都具有重要的意义。本文研究了ＳｉＣ 的注入（７０ｋｅＶ,剂量５ ×１０１３ 至５ ×１０１５ｃｍ － ２） 损伤及其对ＳｉＣ光学性质的影响。研究表明,ＳｉＣ的表面形貌对离子注入极其敏感。剂量较低时,主要影响晶格缺陷吸收及杂质吸收（＜ ２．９ｅＶ）,而在剂量较高时,对带间跃迁产生影响。ＳｉＣ是一种重要的宽禁带半导体材料,在高温、高压、高功率及高频器件方面有重要的应用前景。ＳｉＣ中的离子注入无论在基础研究还是在器件工艺中都具有重要的意义。本文研究了ＳｉＣ 的注入（７０ｋｅＶ,剂量５ ×１０１３ 至５ ×１０１５ｃｍ － ２） 损伤及其对ＳｉＣ光学性质的影响。研究表明,ＳｉＣ的表面形貌对离子注入极其敏感。剂量较低时,主要影响晶格缺陷吸收及杂质吸收（＜ ２．９ｅＶ）,而在剂量较高时,对带间跃迁产生影响。     

氢化非晶硅激光诱导结晶膜微结构的椭偏谱分析

用ＸｅＣｌ准分子激光器对氢化非晶硅（ａ－Ｓｉ：Ｈ）薄膜进行了诱导晶化处理。测定了结晶膜的椭偏谱。利用多层膜模型与Ｂｒｕｇｇｅｍａｎ有效介质近似（Ｂ－ＥＭＡ）分析了结晶膜的微结构特性。研究表明：低能量密度辐照形成的结晶层需用含有ａ－Ｓｉ：Ｈ的ＥＭＡ混合物表征，说明其结晶度相对较低；而高能量密度辐照形成的结晶层，因基结晶度较高，可用不含ａ－Ｓｉ：Ｈ的ＥＭＡ混合物表征。在结晶膜与衬底之是形成了互混层，其     

Surface erosion of stressed materials under high energy helium ion irradiation

Experiments on the influence of external mechanical loading on radiation blistering and flaking of stainless steel and aluminium were carried out. An increase in the critical dose for blistering or flaking of materials was observed when the level of stress increased from zero up to the yield point in a particular temperature range. This phenomenon is discussed in the frame of enhanced capture of helium atoms by bent dislocations in the presence of external mechanical loading. Some supplementary experiments supported the possibility of a dislocation-based mechanism.     

氢,氦共注入的硅样品的退火行为

在以氢先氦后的顺序注入的硅样品中，经不同温度的退火，发现比氢、氦分别单独注入时小得多的注入剂量足以使硅样品表面产生砂眼及了。本文用ＲＢＳ／Ｃ、Ｘ射线罩是衍射、ＡＦＭ、ＸＴＥＭ等不同方法对氢、氦共注入样品进行了研究，对结果作了计算机模拟，并对其机制做了分析与研究。     

Surface blistering of low temperature annealed hydrogen and helium co-implanted germanium and its application to splitting of bonded wafer substrates

Applications involving transfer of germanium layers to silicon-based substrates often require a process involving a restricted thermal budget. The use of relatively low temperatures has a major advantage in reducing stresses when thermal splitting of implanted germanium wafers bonded to silicon-based substrates is used to create germanium-on-oxide (GeOI) layers. The present study investigates the phenomenon of blistering of hydrogen and helium co-implanted germanium over the temperature range 250–400 °C, optical microscopy being used to detect the initial appearance of the blisters. Results showed that plots of Ln(time) vs. blister initiation temperature consisted of several straight-line regions yielding an activation energy for each region. The plots showed similarities to those observed in previous work with silicon co-implanted and annealed under similar conditions. At temperatures below the blister initiation temperature, transmission electron microscopy (TEM), revealed the presence of spherical bubbles at a depth below the surface estimated to be approximately that of the hydrogen implant projected range. GeOI layers were produced by thermal splitting of co-implanted germanium wafers bonded to oxide-coated silicon substrates wafers at a temperature of 300 °C. The RMS roughness of the split germanium surface measured by atomic force microscopy (AFM) was about 11 nm averaged over the wafer surface. In addition there were isolated and randomly distributed regions of 27 nm roughness covering about 20% of the total surface area of the wafer.     

A modified blister test to study the adhesion of thin coatings based on local helium ion implantation

A modified blister test has been developed based on helium ion implantation into selected areas of the metal substrate prior to the coating deposition. After a post-deposition thermal annealing, blisters are formed by agglomeration of the implanted gas at the ceramic–metal interface. This method can be used to control the pressure in the blister which eventually may lead to delamination at the periphery of the blister. A microsieve with a regular array of circular holes is used during the implantation to assure the initial blister size. Two different microsieves were employed in this work, with pore diameters of 1.5 and 4.5 μm, respectively. The distance between the centres of neighbour pores is twice the pore diameter. Scanning Electron Microscopy (SEM) and Confocal Scanning Optical Microscopy (CSOM) observations allowed the determination of the blistering parameters such as the radius, the height and the blister volume. From the gas content and these parameters, the work of adhesion or energy release rate can be obtained.In this work, we present the first results of this blister test applied to W–C:H films and multilayers of Ti and Al deposited by Physical Vapour Deposition on polycrystalline copper substrates. The copper substrates were implanted with 34 keV He⁺ ions up to fluences of 3 and 5×10¹⁶ cm⁻² before the deposition of the coatings and annealed afterwards in vacuum at temperatures from 773 to 1073 K for 30 min. Delamination of the Ti/Al multilayer coatings was already detected after annealing at 873 K with an energy release rate estimated to be 0.5 J m⁻² at a typical helium pressure of 10⁷ Pa. No delamination but only helium swelling was observed for W–C:H coatings annealed at 1073 K. Results of experiments on uncoated copper samples are also shown in order to explain the mechanism of helium bubble growth and helium release that causes the creation of the blisters.     

Correlation between surface damage and micro-defects in Si covered with insulating layer by implantation of He and H ions

Cz n-type Si (100) wafers covered with a 220 nm SiO₂ layer or a 170 nm Si₃N₄ layer were singly implanted with 160 keV He ions at a dose of 5 × 10¹⁶/cm² or successively implanted with 160 keV He ions at a dose of 5 × 10¹⁶/cm² and 110 keV H ions at a dose of 1 × 10¹⁶/cm². Surface morphologies together with defect microstructures have been studied by means of several techniques, including optical microscopy, atomic force microscopy, and cross-sectional transmission electron microscopy (XTEM). Only surface blistering has been observed for He and H sequentially implanted SiO₂/Si samples after annealing in temperature range up to 1000 °C. However, as for the He and H implanted Si₃N₄/Si samples, surface features including blistering and the localized exfoliation of both the top Si₃N₄ layer and the implanted Si layer have been well demonstrated during subsequent annealing. XTEM observations reveal quite different defect morphologies in two kinds of materials under the same implantation and annealing conditions. The possible mechanisms of surface damage in two kinds of materials have been discussed and presented based on the XTEM results.     

Surface blistering of low-temperature annealed hydrogen and helium co-implanted silicon and its application to splitting of bonded wafer substrates

Applications involving transfer of pre-processed silicon layers to substrates of different material often requires a restricted thermal budget. In the case of thermal splitting of hydrogen and helium implanted bonded wafer substrates this can mean restricting temperatures within the range 250-400 °C depending on application. The present study investigates the phenomenon of blistering of implanted substrates as a precursor to thermal splitting following annealing over this temperature range. Optical microscopy was used to detect blister initiation temperature and TEM to show details of sub-surface processes. Results showed that plots of Ln(time) v. blister initiation temperature consisted of several straight-line regions yielding an activation energy for each region. TEM showed strain lines extending to the surface and the development of voiding at the platelet line and between the platelet line and sample surface. The results suggest that the movement of He and its interaction with vacancy complexes plays an important role during annealing. Hydrogen and helium co-implanted silicon wafers bonded to oxide-coated silicon wafers were thermally split at a temperatures between 280 and 300 °C yielding a pinhole-free silicon-on-oxide (SOI), layer of about 460 nm with an RMS roughness measured by AFM in the range 3-6 nm rms.     

银离子掺杂TiO2薄膜的物理性能研究

不同剂量的银离子被注入到采用反应磁控溅射(RMS)制备出的TiO2薄膜中.实验发现,薄膜的成分以二氧化钛和单质银为主,薄膜中可以看到银的纳米晶颗粒.注入的银离子在薄膜中呈近高斯分布,分布峰随注入剂量的增加而向表层移动.银离子注入后原本致密平整的TiO2薄膜表面出现了沟壑和晶粒粗化现象,且均方根粗糙度随注入剂量的增加而增加.不同的注入剂量对薄膜的表面能没有明显的影响.     

An investigation of ion implantation-induced near-surface stresses and their effects in sapphire and glass

Using both cantilever bending and indentation fracture techniques, the generation of near-surface compressive stresses by ion-implantation into sapphire and glass has been monitored and characterized. In all cases, the surface stresses initially increase with ion dose until a critical dose (dependent on material and ion species/ energy) is reached. Beyond this dose, stress relief has been observed and, for sapphire implanted with both Y⁺ and Ti⁺, this has been attributed to the formation and growth of an amorphous layer as monitored by hardness testing. The stress relief has been simply modelled and values estimated for the mechanical strength of the amorphous layer produced. For sapphire, the integrated stress produced over the near-surface volume was found to increase linearly with dose; values of the integrated stress produced by the two different species were similar when considered in terms of energy deposition. Estimates of the contribution to the integrated stress of both the implantation-induced damage and the implanted species profile suggest that the implanted profile makes a minor but significant (20%) contribution. Broadly similar behaviour was observed for soda-lime-silica glass specimens implanted with both C⁺ and N⁺. While the origins of the compressive stress produced are probably similar to those in crystalline materials (i.e. defect production and ion-stuffing), no microstructural explanations for both the observed hardening with increasing dose and stress relief have been forthcoming. However, high-dose implantation of N⁺ into glass leads to blistering and concomitant softening.     

氦注入铝的热解吸谱

用氦热解吸谱(THDS)研究了10keV,4.0×1017cm-2剂量He+辐照(200)择优取向Al的氦热解吸行为及其与升温速率的关系。结果显示,He解吸开始于270℃附近,THDS中无干扰峰存在。He解吸行为与升温速率密切相关,其解吸峰个数及峰位随升温速率的变化而改变,且不遵循通常的一级化学反应模型,而可能是多级或一级与多级化学反应的混合模型。     

离子束溅射Si薄膜的纵向结晶性分析

研究了离子束溅射制备微晶硅薄膜的生长纵向结晶演化过程.纵向分布Raman光谱分析显示,当硅薄膜厚度减薄时,表面硅层的结晶峰强度明显减弱,峰位有微弱的蓝移.最薄的样品显示为非晶态结构.当Raman激光聚焦斑点向64.5nm厚的薄膜样品深层面聚焦取样时,微晶硅薄膜的结晶性先由表层向下逐渐变好,最大晶粒尺寸达3.318nm,最高晶化率达47.6%.最后,当激光聚焦斑点到达薄膜与玻璃衬底的界面孵化层时,硅薄膜显非晶态.