Confinement losses in honeycomb fibers

The confinement losses in honeycomb photonic bandgap fibers are numerically investigated by means of the finite element method. Honeycomb fibers with both an extra hole and a low refractive index region as defects are considered. It is shown that by means of a proper design, confinement losses lower than 0.1 dB/km at /spl lambda/=1.55 /spl mu/m can be obtained with four hole rings.     

Room-temperature InAsSb photovoltaic detectors for mid-infrared applications

Novel noncryogenic InAsSb photovoltaic detectors grown by molecular beam epitaxy are proposed and demonstrated. The quaternary alloy In/sub 0.88/Al/sub 0.12/As/sub 0.80/Sb/sub 0.20/ is introduced as a wide bandgap barrier layer lattice matched to the GaSb substrate. The valence band edge of In/sub 0.88/Al/sub 0.12/As/sub 0.80/Sb/sub 0.20/ nearly matches with InAs/sub 0.91/Sb/sub 0.09/, leading to more efficient transport of photogenerated holes. The resulting mid-infrared photovoltaic detector exhibits a 50% cutoff wavelength of 4.31 /spl mu/m and a peak responsivity of 0.84 A/W at room temperature. High Johnson-noise-limited detectivity (D/sup */) of 2.6/spl times/10/sup 9/ cm/spl middot/Hz/sup 1/2//W at 4.0 /spl mu/m, and 4.2/spl times/10/sup 10/ cm/spl middot/Hz/sup 1/2//W at 3.7 /spl mu/m are achieved at 300 K and 230 K, respectively.     

Optical subthreshold current method for extracting the interface states in MOS systems

Optical subthreshold current method (OSCM) is proposed for characterizing the interface states in MOS systems using the current-voltage characteristics under a photonic excitation. An optical source with a subbandgap (E/sub ph/相似文献   

Dispersion-flattened photonic crystal fiber with large effective area and low confinement loss

A photonic crystal fiber (PCF) can realize a flat dispersion over a wide wavelength range that cannot be realized with a conventional single-mode fiber. However, the confinement loss tends to increase in a conventional dispersion-flattened PCF (DF-PCF) that has uniform air holes. In this paper, a novel PCF that has two cladding layers with different effective indices is proposed. The authors numerically show that the proposed PCF can achieve an ultralow dispersion variation of less than 0.8 ps/nm/spl middot/km in all telecommunication bands, with both a large effective area greater than 100 /spl mu/m/sup 2/ and a low confinement loss less than 0.01 dB/km.     

Bismuth oxide nonlinear fibre-based 80 Gbit/s wavelength conversion and demultiplexing using cross-phase modulation and filtering scheme

Reported is the experimental demonstration of wavelength conversion and subsequent demultiplexing of an 80 Gbit/s OTDM signal using the cross-phase modulation and spectral filtering technique in short lengths of bismuth oxide-based nonlinear fibre with a nonlinearity of /spl gamma/=/spl sim/1100 W/sup -1/ /spl middot/ km/sup -1/. Error-free, overall operation is readily achieved over a wavelength tuning range of /spl sim/10 nm.     

Air guiding with honeycomb photonic bandgap fiber

We notice that honeycomb cladding was overlooked for air-guiding photonic bandgap fiber design. Air-silica honeycomb cladding is shown in this letter to be able to guide light in a slightly large-sized hollow core, with a reasonably wide bandwidth (/spl sim/200 nm). Noncircular air-hole shape is also explored for air-guiding honeycomb fiber design.     

A dependency of quantum efficiency of silicon CMOS n/sup +/pp/sup +/ LEDs on current density

A dependency of quantum efficiency of nn/sup +/pp/sup +/ silicon complementary metal-oxide-semiconductor integrated light-emitting devices on the current density through the active device areas is demonstrated. It was observed that an increase in current density from 1.6/spl times/10/sup +2/ to 2.2/spl times/10/sup +4/ A/spl middot/cm/sup -2/ through the active regions of silicon n/sup +/pp/sup +/ light-emitting diodes results in an increase in the external quantum efficiency from 1.6/spl times/10/sup -7/ to 5.8/spl times/10/sup -6/ (approximately two orders of magnitude). The light intensity correspondingly increase from 10/sup -6/ to 10/sup -1/ W/spl middot/cm/sup -2//spl middot/mA (approximately five orders of magnitude). In our study, the highest efficiency device operate in the p-n junction reverse bias avalanche mode and utilize current density increase by means of vertical and lateral electrical field confinement at a wedge-shaped n/sup +/ tip placed in a region of lower doping density and opposite highly conductive p/sup +/ regions.     

Very large effective area singlemode photonic bandgap fibre

A photonic bandgap fibre consisting of a 34 /spl mu/m diameter pure silica core surrounded by a periodic cladding has been modelled and characterised. It guides a robust HE/sub 11/ mode at 1.55 /spl mu/m with a 517 /spl mu/m/sup 2/ effective area and 0.4 dB/m propagation losses.     

Investigation of a periodically segmented waveguide Fabry-Pe/spl acute/rot interferometer for use as a chemical/biosensor

We present a periodically segmented waveguide Fabry-Pe/spl acute/rot interferometer (PSW-FPI) intended to be used for tagless real-time chemical/ biological sensing through bulk-material interaction. The differential sensor detects changes in the refractive index (RI) of a sample regardless of its absolute RI value. Experiments with a series of sucrose solutions of various concentrations are compared with theoretical results, and a very good match is found between the two. The theoretical sensitivity limit for a 50-dB-signal-to-noise-ratio (SNR) measurement system is estimated as /spl delta/n=3/spl middot/10/sup -7/. For a 29-dB-SNR measurement system, a measured sensitivity limit of /spl delta/n=4/spl middot/10/sup -5/ is comparable with the previously reported sensitivities of label-free real-time optical biosensors (2/spl middot/10/sup -5/-5/spl middot/10/sup -5/). However, the total required sensing length (720 /spl mu/m) of our PSW-FPI sensor is much shorter than that of the previously reported devices (9-20 mm).     

Microfluidic integration of porous photonic crystal nanolasers for chemical sensing

We have recently developed planar photonic crystal nanolasers based on porous cavity designs. High-quality factor cavities confine light within the pores of the photonic crystal and, thus, our lasers are ideally suited for the investigation of nanoscale interactions between light and matter. We have demonstrated the operation of photonic crystal lasers within different chemical solutions, embedded them into silicone microfluidic flow channels, and were able to detect refractive index changes as small as /spl Delta/n=0.005. We predict that our porous nanolasers can detect refractive index changes as small as /spl Delta/n=8.23/spl middot/10/sup -4/.     

High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

We report investigations of Si face 4H-SiC MOSFETs with aluminum (Al) ion-implanted gate channels. High-quality SiO/sub 2/-SiC interfaces are obtained both when the gate oxide is grown on p-type epitaxial material and when grown on ion-implanted regions. A peak field-effect mobility of 170 cm/sup 2//V/spl middot/s is extracted from transistors with epitaxially grown channel region of doping 5/spl times/10/sup 15/ cm/sup -3/. Transistors with implanted gate channels with an Al concentration of 1/spl times/10/sup 17/ cm/sup -3/ exhibit peak field-effect mobility of 100 cm/sup 2//V/spl middot/s, while the mobility is 51 cm/sup 2//V/spl middot/s for an Al concentration of 5/spl times/10/sup 17/ cm/sup -3/. The mobility reduction with increasing acceptor density follows the same functional relationship as in n-channel Si MOSFETs.     

High-performance, metamorphic In/sub x/Ga/sub 1-x/As tunnel diodes grown by molecular beam epitaxy

Thin In/sub x/Ga/sub 1-x/As tunnel junction diodes having compositions from x=0.53 to 0.75 that span a range of bandgap energies from 0.74 to 0.55 eV, were grown on InP and metamorphic, step-graded In/sub x/Al/sub 1-x/As/InP substrates using molecular beam epitaxy and evaluated in the context of thermophotovoltaic (TPV) applications. Both carbon and beryllium were investigated as acceptor dopants. Metamorphic tunnel diodes with a bandgap of 0.60 eV (x=0.69) using carbon acceptor doping displayed highest peak current densities, in excess of 5900 A/cm/sup 2/ at a peak voltage of 0.31 V, within a 200 /spl Aring/ total thickness tunnel junction. Identically doped lattice-matched tunnel diodes with a bandgap of 0.74 eV exhibited lower peak current densities of approximately 2200 A/cm/sup 2/ at a higher peak voltage of 0.36 V, consistent with the theoretical bandgap dependence expected for ideal tunnel diodes. Specific resistivities of the 0.60 eV bandgap devices were in the mid-10/sup -5/ /spl Omega/-cm/sup 2/ range. Together with their 200 /spl Aring/ total thickness, the electrical results make these tunnel junctions promising for TPV applications where low-resistance, thin metamorphic tunnel junctions are desired.     

High brightness index-guided parabolic bow-tie laser arrays

This letter describes a novel 980-nm parabolic bow-tie laser array (PBTLA) that is suitable for high-power and high-brightness operation. Output powers in excess of 2.5 W/facet pulsed in a 1/spl deg/ (lateral) beam, less than twice the diffraction limit, corresponding to 275 MW/spl middot/cm/sup -2//spl middot/sr/sup -1/ brightness, have been measured without the use of external lenses from uncoated PBTLAs fabricated in-house (top metal contact surface area/spl sim/0.1 mm/sup 2/). Experimental results presented in this letter indicate that coherence effects are significant in the operation of such devices. Theoretical models based on the simple diffraction theory and on the coupled-mode theory have been used to interpret the experimental results.     

A resonant tunneling quantum-dot infrared photodetector

A novel device-resonant tunneling quantum-dot infrared photodetector-has been investigated theoretically and experimentally. In this device, the transport of dark current and photocurrent are separated by the incorporation of a double barrier resonant tunnel heterostructure with each quantum-dot layer of the device. The devices with In/sub 0.4/Ga/sub 0.6/As-GaAs quantum dots are grown by molecular beam epitaxy. We have characterized devices designed for /spl sim/6 /spl mu/m response, and the devices also exhibit a strong photoresponse peak at /spl sim/17 /spl mu/m at 300 K due to transitions from the dot excited states. The dark currents in the tunnel devices are almost two orders of magnitude smaller than those in conventional devices. Measured values of J/sub dark/ are 1.6/spl times/10/sup -8/ A/cm/sup 2/ at 80 K and 1.55 A/cm/sup 2/ at 300 K for 1-V applied bias. Measured values of peak responsivity and specific detectivity D/sup */ are 0.063 A/W and 2.4/spl times/10/sup 10/ cm/spl middot/Hz/sup 1/2//W, respectively, under a bias of 2 V, at 80 K for the 6-/spl mu/m response. For the 17-/spl mu/m response, the measured values of peak responsivity and detectivity at 300 K are 0.032 A/W and 8.6/spl times/10/sup 6/ cm/spl middot/Hz/sup 1/2//W under 1 V bias.     

Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts

The optical and electrical properties of Ni(5 nm)-Au(5 nm) and Ni(3.5 nm)-indium tin oxide (ITO) (60 nm) films were studied. It was found that the normalized transmittance of Ni/ITO film could reach 87% at 470 nm, which was much larger than that of the Ni-Au film. It was also found that the specific contact resistance was 5 /spl times/ 10/sup -4/ /spl Omega/ /spl middot/ cm/sup 2/ and 1 /spl times/ 10/sup -3/ /spl Omega/ /spl middot/ cm/sup 2/, respectively, for Ni-Au and Ni/ITO on p-GaN. Furthermore, it was found that the 20 mA output power of light-emitting diode (LED) with Ni-Au p-contact layer was 5.26 mW. In contrast, the output power could reach 6.59 mW for the LED with Ni/ITO p-contact layer.     

四方格子全固光子带隙光纤带隙特性研究

基于平面波展开法,对四方格子全固光子带隙光纤带隙随结构的变化特性进行了数值模拟,并与具有相同结构参数三角格子全固光子带隙光纤进行了比较,数值结果表明带隙的位置由高折射率棒的结构参数决定,而与高折射率棒的排列方式和棒之间的间距无关,这一结果与反谐振效应非常吻合。最后对理想和实际拉制出的四方格子的全固态光子带隙光纤的带隙进行了比较,得出了在设计光纤时,应利用较低的带隙的结论。     

Low-frequency noise in TaSiN/HfO/sub 2/ nMOSFETs and the effect of stress-relieved preoxide interfacial layer

Low-frequency noise characteristics are reported for TaSiN-gated n-channel MOSFETs with atomic-layer deposited HfO/sub 2/ on thermal SiO/sub 2/ with stress-relieved preoxide (SRPO) pretreatment. For comparison, control devices were also included with chemical SiO/sub 2/ resulting from standard Radio Corporation of America clean process. The normalized noise spectral density values for these devices are found to be lower when compared to reference poly Si gate stack with similar HfO/sub 2/ dielectric. Consequently, a lower oxide trap density of /spl sim/4/spl times/10/sup 17/ cm/sup -3/eV/sup -1/ is extracted compared to over 3/spl times/10/sup 18/ cm/sup -3/eV/sup -1/ values reported for poly Si devices indicating an improvement in the high-/spl kappa/ and interfacial layer quality. In fact, this represents the lowest trap density values reported to date on HfO/sub 2/ MOSFETs. The peak electron mobility measured on the SRPO devices is over 330 cm/sup 2//V/spl middot/s, much higher than those for equivalent poly Si or metal gate stacks. In addition, the devices with SRPO SiO/sub 2/ are found to exhibit at least /spl sim/10% higher effective mobility than RCA devices, notwithstanding the differences in the high-/spl kappa/ and interfacial layer thicknesses. The lower Coulomb scattering coefficient obtained from the noise data for the SRPO devices imply that channel carriers are better screened due to the presence of SRPO SiO/sub 2/, which, in part, contributes to the mobility improvement.     

Characterization of copper germanide as contact metal for advanced MOSFETs

The material and electrical characteristics of /spl epsiv/-Cu/sub 3/Ge as a contact metal were investigated. The samples were prepared by direct copper deposition on germanium wafers, followed by rapid thermal annealing. The /spl epsiv/-Cu/sub 3/Ge formed at 400 /spl deg/C has a resistivity of 6.8 /spl mu//spl Omega//spl middot/cm, which is lower than typical silicides for silicon CMOS. Cross-sectional transmission electron microscopy showed smooth germanide/germanium interface, with a series of nanovoids aligning close to the top surface. These voids are believed to be the results of Kirkendall effect arising from the different diffusion fluxes of copper and germanium. The specific contact resistivity of Cu/sub 3/Ge, obtained from four-terminal Kelvin structures, was found to be as low as 8/spl times/10/sup -8/ /spl Omega//spl middot/cm/sup 2/ for p-type germanium substrate. This low resistivity makes Cu/sub 3/Ge a promising candidate for future contact materials.     

Characterization of the temperature sensitivity of gain and recombination mechanisms in 1.3-/spl mu/m AlGaInAs MQW lasers

The potential of 1.3-/spl mu/m AlGaInAs multiple quantum-well (MQW) laser diodes for uncooled operation in high-speed optical communication systems is experimentally evaluated by characterizing the temperature dependence of key parameters such as the threshold current, transparency current density, optical gain and carrier lifetime. Detailed measurements performed in the 20/spl deg/C-100/spl deg/C temperature range indicate a localized T/sub 0/ value of 68 K at 98/spl deg/C for a device with a 2.8 /spl mu/m ridge width and 700-/spl mu/m cavity length. The transparency current density is measured for temperatures from 20/spl deg/C to 60/spl deg/C and found to increase at a rate of 7.7 A/spl middot/cm/sup -2//spl middot/ /spl deg/C/sup -1/. Optical gain characterizations show that the peak modal gain at threshold is independent of temperature, whereas the differential gain decreases linearly with temperature at a rate of 3/spl times/10/sup -4/ A/sup -1//spl middot//spl deg/C/sup -1/. The differential carrier lifetime is determined from electrical impedance measurements and found to decrease with temperature. From the measured carrier lifetime we derive the monomolecular ( A), radiative (B), and nonradiative Auger (C) recombination coefficients and determine their temperature dependence in the 20/spl deg/C-80/spl deg/C range. Our study shows that A is temperature independent, B decreases with temperature, and C exhibits a less pronounced increase with temperature. The experimental observations are discussed and compared with theoretical predictions and measurements performed on other material systems.     

Fabrication and characterization of 11-kV normally off 4H-SiC trenched-and-implanted vertical junction FET

This letter reports the first demonstration of 101 kV trenched-and-implanted normally off 4H-SiC vertical junction field-effect transistor (TI-VJFET) with a 120 /spl mu/m /spl sim/4.9/spl times/10/sup 14/ cm/sup -3/-doped drift layer. Blocking voltages (V/sub B/) of 10 kV to 11 kV have been measured. The best specific on-resistance (R/sub SP/_/sub ON/) normalized to source active area has been determined to be 130 m/spl Omega//spl middot/cm/sup 2/. Three-dimensional computer modeling including current spreading effect shows that the TI-VJFET would have a specific resistance of 168 m/spl Omega//spl middot/cm/sup 2/ if it is scaled up substantially in size.