烧结助剂中CaO质量分数及烧结温度对氧化铝基微波陶瓷性能的影响

选用CaO–SiO_2–TiO_2作为氧化铝陶瓷的烧结助剂,在空气气氛下经过常压烧结制备Al_2O_3陶瓷。研究了烧结助剂中CaO质量分数以及烧结温度对Al_2O_3基微波陶瓷的相组成、微观结构和介电性能的影响。结果表明:添加含CaO烧结助剂的Al_2O_3陶瓷中,出现了CaAl_(12)O_(19)第二相,相含量随着CaO质量分数的增加而增加;随着烧结助剂中CaO质量分数的增加,Al_2O_3陶瓷试样介电常数增大,品质因数先升高后降低。随着烧结温度的升高,Al_2O_3陶瓷相对密度和品质因数先升高后降低,介电常数和谐振频率温度系数增大。当烧结温度为1450℃、烧结助剂中CaO质量分数为0.4%时,烧结体的相对密度达到最大值98.61%,介电常数为9.88,品质因数值为21957GHz,谐振频率温度系数为-21.353×10~(-6)/℃。     

MgTiO_3-CaTiO_3系微波陶瓷介电性能的研究

以分析纯的MgO、TiO_2、CaTiO_3为初始原料,采用固相法制备(1-x)MgTiO_3-xCaTiO_3(摩尔分数x=0.01~0.10)系列微波介质陶瓷材料,研究添加CaTiO_3后,体系的晶体结构、显微结构、微波介电性能之间的变化规律。研究表明,随着CaTiO_3掺杂量的增加,陶瓷的体积密度、介电常数和谐振频率温度系数不断增大,而体系的品质因数呈下降趋势。当掺杂7%(摩尔分数)CaTiO_3时,陶瓷在1 400℃烧结4 h可获得近零的频率温度系数,τ_f=0.652×10~(-6)/℃,品质因数Q×f=38 753 GHz,介电常数ε_r=19.45。     

ZnO-B_2O_3掺杂陶瓷的微观结构和微波介电性能

研究了ZnO-B_2O_3(ZB_2)对(Ca_(0.254)Li_(0.19)Sm_(0.14))TiO_3陶瓷的烧结行为和微波介电性能的影响。结果表明:ZnO-B_2O_3添加质量分数为3%时,试样的相对密度达到最大值;烧结温度从1 300℃降低到1 100℃时,试样的微波介电性能没有衰减。添加3%ZB_2(质量分数)的(Ca_(0.254)Li_(0.19)Sm_(0.14))TiO_3陶瓷在1 100℃烧结3 h呈现出较好的微波介电性能,介电常数ε_r=108.2,品质因数Q_f=6 545 GHz,共振频率温度系数τf=6.5×10~(-6)/℃,表明ZB_2是一种有效改善(Ca_(0.254)Li_(0.19)Sm_(0.14))TiO_3陶瓷致密性和微波介电性能的烧结助剂。     

掺杂不同质量分数Y_2O_3、MgO对Al_2O_3陶瓷显微结构及介电性能的影响

利用放电等离子烧结技术制备了不同质量分数Y_2O_3单独掺杂及不同质量分数Y_2O_3、MgO共同掺杂的Al_2O_3陶瓷,研究了烧结助剂掺杂质量分数对Al_2O_3陶瓷显微结构及介电性能的影响。结果表明,孔隙率是影响Al_2O_3陶瓷介电性能的主要因素;单独掺杂质量分数为0.25% Y_2O_3时,Al_2O_3陶瓷得到最优的介电性能,介电常数(ε_r)为9.5±0.2,介质损耗(tanδ)稳定在10~(-3)数量级以内;同时掺杂Y_2O_3和MgO能进一步改善其介电性能,当两者质量分数均为0.25%时,得到最优值,介电常数(ε_r)为10.3±0.2,介质损耗(tanδ)稳定在8×10~(-4)以下。     

不同方式引入CuO制备低温烧结(Bi1.5Zn0.5)(Zn0.5Nb1.5)O7陶瓷

以Bi₂O₃、ZnO和Nb₂O₅为原料,采用传统固相反应法制备（Bi_1.5Zn_0.5）（Zn_0.5Nb_1.5）O₇（BZN）陶瓷。通过CuO包覆层修饰BZN粉体表面,引入CuO助烧剂代替直接混合BZN和CuO粉体。以CuSO₄溶液为先驱体制备CuO包覆层,采用液相包覆法引入助烧剂可减少CuO的添加量,从而降低CuO对BZN陶瓷介电性能的不良影响。结果表明,当CuSO₄溶液浓度为0.5 mol/L时,可以促进陶瓷的烧结和致密化过程,经900℃烧结3 h所得BZN陶瓷介电性能最佳,介电常数（ε_r）为141,品质因数值（Q_f）为426 GHz,谐振频率温度系数（τ_f）为—357×10-6/℃（4 GHz）,皆优于固相混合法所得介电性能（介电常数为134,品质因数为287 GHz,谐振频率温度系数为—374×10-6/℃（4 GHz））。     

复合钙钛矿型Ba[(Co_(1-x)Mg_x)_(1/3)Nb_(2/3)]O_3基微波陶瓷的结构与性能

采用传统固相法制备复合钙钛矿型Ba[(Co_(1-x)Mg_x)_(1/3)Nb_(2/3)]O_3(0.0≤x≤0.4)微波陶瓷。通过介电性能测试,结合X射线衍射仪、拉曼光谱、透射电镜等表征手段,系统研究Mg掺杂对Ba(Co_(1/3)Nb_(2/3))O_3微波陶瓷的B位1:2有序度与性能的影响。结果表明,Mg掺杂能显著提高Ba(Co_(1/3)Nb_(2/3))O_3陶瓷的B位1:2有序度,进而提高材料的品质因子。1 420℃下烧结的掺杂量x=0.2的陶瓷有序度最高,在1 300℃退火24 h后,其B位1:2有序度进一步提高,并且第二相得以消除,获得与传统Ta基复合钙钛矿微波陶瓷相当的微波性能:介电常数ε_r=30.94,品质因子Q·f=63 161 GHz,谐振频率温度系数τ_f=4.1 ppm/℃。     

不同Nd掺杂量(Ba_(1-3x/2)Nd_x)(Ti_(0.99)Zr_(0.01))O_3陶瓷结构及介电性能

采用高温固相合成法对Ba Ti O_3粉体进行Nd_2O_3和Zr O_2双施主复合掺杂,制备(Ba_(1-3 x/2)Nd_x)(Ti_(0.99)Zr_(0.01)) O_3(BTNZ)陶瓷,研究Nd掺杂量对BTNZ粉体的陶瓷微观结构和介电性能的影响,结果表明,掺杂适量的Nd~(3+)和Zr~(4+)分别置换Ba Ti O_3中的Ba~(2+)和Ti~(4+)能有效地改善Ba Ti O_3陶瓷材料的介电性能,随着Nd~(3+)掺杂量的增加,介电峰逐渐展宽,介电峰值非线性地从10049降低到5100,居里峰对应的T_c从136℃降至56℃。     

SrTiO_3-Al_2O_3系陶瓷的制备及介电性能的研究

采用固相反应法制备(1-x)Sr Ti O3-x Al2O3(摩尔分数x=0.30~0.50)系列微波介质陶瓷材料。通过设计实验改变Al2O3的添加量和烧结温度来研究体系的相组成、显微结构及介电性能之间的变化规律。结果表明:随着Al2O3添加量的增多,陶瓷体系的介电常数呈减小趋势;在1390~1450℃下,保温4h烧结时制备的(1-x)Sr Ti O3-x Al2O3陶瓷的致密度随烧结温度的变化不大,均在94%以上。当烧结温度为1450℃,x=0.5时,所制备的陶瓷体系具有较好的介电性能:介电常数约为77.57,介电损耗小于4.4×10-4,致密度约为98%。     

Y~(3+)掺杂高介低损耗钛酸锶钡陶瓷的研究

为获得高介电常数低介电损耗的钛酸锶钡陶瓷,采用固相反应法制备了Y~(3+)掺杂BST_(60),BST_(65),BST_(70)陶瓷。用X射线衍射(XRD)、扫描电子显微镜(SEM)和阻抗分析仪,对陶瓷的微观结构和介电性能进行了测量。研究发现,Y~(3+)的掺入并未改变陶瓷母体结构,Y~(3+)在BST中形成了连续固溶体。最佳烧结温度处,随Ba/Sr比增大,晶粒尺寸增加;同一Ba/Sr比下,掺杂Y~(3+)能促进晶粒生长,由开始的平均1μm增大为3μm~4μm,尺寸连续分布,致密度提高。适量Y~(3+)掺杂有利于提高材料介电常数,降低介电损耗。当烧结温度为1450℃,Y~(3+)掺杂量为0.3%(摩尔分数)时,BST_(70)陶瓷相对密度为95.7%,介电常数最大为27891;此时BST_(65)介电常数为17811,损耗最小为0.00869,频率稳定性最好。     

MgF2掺杂对0.95MgTiO3-0.05CaTiO3陶瓷结构与微波性能的影响

采用传统固相合成法制备Mg F₂掺杂0.95MgTiO₃-0.05CaTiO₃(95MCT)微波陶瓷,结合X射线衍射谱、拉曼光谱、X射线光电子能谱、扫描电镜及矢量网络分析等表征技术,系统研究Mg F₂掺杂对95MCT陶瓷烧结温度、晶体结构、微观形貌与微波性能的影响。结果表明：少量Mg F₂掺杂能够促进陶瓷晶粒均匀生长,抑制Ti⁴⁺离子向Ti³⁺离子转变,增强[TiO₆]八面体中Ti—O键的结合强度,从而使95MCT陶瓷的品质因子由30 335 GHz提高至89 470 GHz。1 225℃烧结的Mg F₂质量分数为1%的95MCT陶瓷具有优异的综合微波性能：相对介电常数ε_r约为19.74,品质因子Q×f值约为89 470 GHz,谐振频率温度系数τ_f约为-10.2×10^-6℃^-1。     

Effect of La2O3-Dopant on Microstructure and Microwave Dielectric Properties of CaO-MgO-Nb2O5-TiO2 System Ceramics

With the development of microwave integratedsystem for wireless communication, requirements ofthe microwave device are combined with high dielec tric constants (εr), low dielectric losses (Q = 1/tanδ) and near zero temperature coefficient for stabili ty and frequency selectivity[1,2]. But it is hard to findmaterials that satisfy all above mentioned requiredcharacteristics. In general, a ceramic with a high di electric constant has a larger positive temperature coef fi…     

Properties of La2O3-Doped PNSZT Piezoelectric Ceramics Having Tetragonal and Rhombohedral Coexistent Phases

The relationship between composition and the electric mechanical properties for La2O3-doped lead niobium stibium zirconate titanate(La2O3-doped PNSZT) piezoelectric ceramics,in which there are tetragonal and rhombohedral coexistent phases, was studied. A series of piezoelectric ceramics with good properties was obtained, having dielectric constants(ε=1500～2500), plane electromechanical coupling factor(Kp=0.45～0.65), mechanical quality factor(Qm=500～1600). These materials are used for making ultrasonic sensor and filter, and marine acoustic launching and receiving device, and so on. It has been explored that the influence of composition on the lattice constant and phase composition of La2O3-doped PNSZT piezoelectric ceramics by XRD(X-ray diffraction). The character of dielectric constant changing of La2O3-doped PNSZT piezoelectric ceramics before polarization and after polarization was studied. The affecting mechanism about composition on the electric machine properties of phase coexistent La2O3-doped PNSZT piezoelectric ceramics was analyzed and discussed.     

Rare earth doped CaCu_3Ti_4O_(12) electronic ceramics for high frequency applications

Ca1-xRxCu3Ti4O12(R=La,Y,Gd;x=0,0.1,0.2,0.3) electronic ceramics were fabricated by conventional solid-state reaction method.The microstructure and dielectric properties as well as impedance behavior were carefully investigated.XRD results showed that the secondary phases with the general formula R2Ti2O7 existed at grain boundaries of rare earth doped ceramics,which inhibited abnormal grain growth.The dielectric constant decreased from 4×105 in pure CaCu3Ti4O12(CCTO) ceramics to 2×103 with rare earth doping.However,all samples showed high dielectric constant in broad frequency range(10 MHz).The cutoff frequency(f0) was remarkably shifted to higher frequency from 13 MHz(pure CCTO ceramics) to 80 MHz(Gd-doped CCTO ceramics).Meanwhile,the dielectric loss tangent rapidly decreased approximately 10 times.These improvements of dielectric properties by rare earth doping are very useful in wide frequency chip capacitor and LTCC devices.     

Dielectric Properties of CeO2 -Doped Ba( Zr, Ti)O3 Ceramics

The influence of additive amount of CeO2 on the properties of Ba(Ti, Zr)O3 (BTZ) capacitor ceramics prepared using conventional solid-state reaction method was investigated. The dielectric constant(ε) increases to a maximum when w( CeO2 ) is about 1.0% and then decreases again at higher doping concentration of CeO2. The dielectric constant gets a maximum while w ( CeO2 ) is about 1. 0%, and the dielectric loss is minimum while w ( CeO2 ) is0.5 %. CeO2 can decrease the curie temperature, widen the εr-T peak and decrease the absolute value of dielectric constant temperature coefficient. The influence mechanism of CeO2 additive on the properties of the BTZ ceramics was discussed. The results show that CeO2 additive influences the properties of BTZ ceramics by means of forming defect solid solution , shifting curie temperature peak effect, segregating in crystal boundary , and impeding grain growth.     

Study on BaO-Sm2O3-TiO2 Microwave Dielectric Ceramics Doped with Bismuth and Zinc

BaO-Sm2O3-TiO2 microwave dielectric ceramics doped with Bi and Zn was studied. The experiment was based on BST microwave dielectric ceramics doped with Bi2O3, which is shown by Ba4(Sm1-yBiy)28/3Ti18O54. When y=0.15, ZnO was added and the effects of ZnO on this system were studied. The result shows that the dielectric characteristics of BST microwave dielectric ceramics are the most excellent when the content of ZnO is 3%, and the optimal sintering temperature is 1200 ℃.     

Sm2O3掺杂BSTN陶瓷的制备与介电性能

采用溶胶凝胶法制备了Sm3+掺杂(Ba,Sr)TiO3/(Ba,Sr)Nb2O6复相陶瓷,XRD衍射表明,样品由钙钛矿相和钨青铜相组成,无其他杂相生成。随着Sm3+掺杂量的增加,样品衍射峰向小角度方向移动,表明掺杂的Sm3+取代了体系中Nb5+及Ti4+。检测了样品的介电-温度性能,结果表明,随着Sm3+掺杂量的增加,样品的介电常数及介电损耗都有所降低,当Sm3+掺杂量达到0.004时,样品介电损耗最低,再增加Sm3+的掺杂量,样品的介电损耗又出现增加的趋势。可以得出,适量Sm3+的掺杂可以有效降低样品的介电损耗。     

Piezoelectric Properties and Stability of Resonant Frequency of Cr Modified PSZN-PZT Ceramics

The structure, piezoelectric properties, aging rate and temperature coefficient of resonant frequency of( Pb0. 97Pr0. 03 ) [ ( Zn1/3 Nb2/3 )0.06 ( Sn1/3 Nb2/3 )0.06 ( Zr0. 43 Ti0.45 )0. 88] O3 0.5wt% MnO2 ceramics were investigated as a function of Cr dopant content. X-ray diffraction pattern indicates that all samples are all in the tetragonal side near the morphotropic phase boundary, and the tetragonality of PSZN-PZT ceramics is decreased with increasing Cr content.The EPR spectra and the piezoelectric properties of the PSZN-PZT ceramics prove that as the Cr content is low, and high valence of Cr ion plays an important role in ceramics. When Cr content increasing, the properties are dominated by the low valence of Cr ion. The solubility of the Cr in PSZN-PZT ceramics is about 0.7%. 0.5% ～ 0.7% of Cr and 0.5 % Mn are best stabilizers to improve the temperature dependence and aging rate of the resonant frequency of the PSZN-PZT ceramics.     

氧化钆对钛酸钡陶瓷结构和介电性能的影响

采用固相法制备得到了掺杂 1% (mol) Gd2 O3的钛酸钡陶瓷 ,并通过 X射线衍射分析和扫描电镜对其结构进行了表征。对其介电常数、介电损耗和室温电阻率进行了测定 ,结果表明 Gd2 O3掺杂 Ba Ti O3陶瓷的介电常数明显增加 ,介电损耗也有所升高 ,室温电阻率明显降低