ZnO薄膜紫外探测器的研制

利用射频磁控溅射技术在SiO2/n-Si衬底上制备了ZnO薄膜,并在薄膜上制作了Ag-ZnO肖特基二极管和Ag-ZnO-Ag肖特基MSM叉指结构的紫外探测器。所制备的ZnO薄膜具有良好的c轴择优取向,表面平整,在可见光范围具有较高的透射率,吸收边在370 nm附近;所制作的肖特基二极管显示了良好的整流特性,有效势垒高度约为0.65 eV;所制作的MSM紫外探测器在5 V偏压下漏电流为3.3×10-8A,在紫外波段有较高的响应度,光响应度峰值在365 nm附近。     

氩氧比对ZnO薄膜特性的影响与紫外探测器的研制

利用射频磁控溅射技术在SiO2／n—Si和玻璃衬底上制备ZnO薄膜,研究了溅射气体氩氧比对薄膜特性的影响,在氩氧比为2：3下所制备的ZnO薄膜c轴择优取向相对较好,薄膜的颗粒随氩氧比的增加而增大,所制备的薄膜在可见光均具有较高的透射率,吸收边在360-380nm附近;并在以SiO。／n—Si为衬底,氩氧比为2：3,经过退火处理的ZnO薄膜上制作Ag-ZnO—Ag肖特基MSM叉指结构的紫外探测器,所制作的探测器在5V偏压下漏电流为3．3×10^-8A,在紫外波段有较高的响应度,光响应度峰值在365nm附近。     

基于ZnO/Glass声表面波器件的高速紫外传感特性研究

基于氧化锌/玻璃(ZnO/Glass)结构的声表面波(SAW)器件可以用来制作性能优良的紫外探测器。使用有限元分析软件COMSOL Multiphysics仿真了该种结构的声表面波器件,并得到其S11参数。基于仿真结果,制备了相应的SAW器件,实验所用ZnO薄膜采用直流反应磁控溅射方法沉积,所制备的ZnO薄膜呈(0002)取向。基于该种结构的SAW紫外探测器对紫外光的反应时间仅3 s,其紫外探测的灵敏度高达36.4×10-6/mW/cm2。     

一种IDT/(002)ZnO/SiO2/Si多层结构的声表面波器件

以IDT/(002)ZnO/SiO2/Si多层结构的声表面波器件为研究对象,通过有限元软件对单对叉指的三维结构进行有限元仿真,得到了不同的ZnO膜厚对SAW器件所激发瑞利波的相速度、机电耦合系数的影响规律,以及SiO2膜厚与SAW器件频率温度系数之间的关系.采用热氧化、射频磁控溅射以及光刻工艺在Si衬底上分别制备SiO2膜、ZnO膜和IDT,制备了三组不同ZnO膜厚的延迟线型SAW器件.通过X射线衍射仪对制备的ZnO薄膜进行检测,结果表明ZnO薄膜具有良好的(002)晶体取向以及良好的结晶质量.采用矢量网络分析仪对所制作SAW器件进行了测试,得到了器件的传输曲线,实验结果与有限元仿真结果具有较好的一致性.     

以Si3N4作增透膜的Si基Ge量子点探测器的研究

设计并制作了以Si3N4作增透膜的Si基Ge量子点红外探测器.采用气态源分子束外延(GSMBE)方法在Si(100)衬底上生长了20层的自组织Ge量子点.在此基础上,流水制作了p-i-n结构的量子点红外探测器.为了提高探测器的响应度,采用Si3N4作为增透膜以增强探测器对入射光的吸收.用传输矩阵方法模拟的结果显示,185上nm厚的Si3N4增透膜可以使探测器在1310 nm波长处具有较高的吸收率.根据此结果,用等离子体增强化学气相沉积(PECVD)方法在探测器表面淀积了185 nm的Si3N4.在室温下,测得量子点探测器在1.31μm处的响应度为8.5 mA/W,跟没有增透膜的器件相比,响应度提高了将近30倍.     

Pd/SnO2/SiO2/Si集成薄膜的结构与气敏性能

采用磁控溅射技术制备Pd/SnO2/SiO2/Si集成薄膜.研究退火处理对薄膜微观结构和表面形貌的影响,进而测试了相关的气敏性能.实验证明,经过氧化性退火处理,集成薄膜中的SiO2层厚度从3 nm增长到50 nm左右,形成Pd/SnO2/SiO2/Si结构,SnO2薄膜形成金红石结构的多孔柱状晶.气敏测试表明,Pd/SnO2/SiO2/Si集成薄膜在低温区对H2、CH4、CO和C2 H5OH敏感性较高,另外,随着H2气体浓度的增加,相应灵敏度从35递增至73.5.     

硅基底和金刚石基底上沉积ZnO薄膜工艺研究

采用射频磁控溅射方法分别在硅基底和金刚石基底上制备ZnO薄膜,研究了硅和金刚石衬底的不同对ZnO薄膜生长机理的影响,同时分析了氩氧比和退火温度这两个工艺参数对薄膜的晶格取向和表面形貌的影响。利用XRD和AFM对ZnO压电薄膜的性能进行了测试。结果显示,金刚石基片上制备的薄膜表面状态远优于硅基片上的薄膜表面状态;在同类型基底上生长的ZnO薄膜,薄膜的晶格取向随着氩氧比的升高而增强;对于硅基底上生长的ZnO薄膜,适当的退火能够成倍地提高薄膜的c轴取向性。     

Ti3C2TX/硅微孔阵列光电探测器的研究

过渡金属碳化物和氮化物(MXenes)具有高电导率、大范围可调的功函数等特性,在高性能光电探测器的构筑中有着广阔的应用前景。本文采用简单的旋涂方法在具有六边形微孔阵列的n-Si上制备了Ti₃C₂T_X MXenes肖特基接触电极,构建了垂直的Ti₃C₂T_X/硅微孔阵列肖特基结光电探测器。研究发现器件具有良好的整流特性,势垒高度为0.68 eV,在零偏压工作模式780 nm光照下,响应度为40.2 mA/W,响应速度为0.025 ms。基于器件良好的光电响应,获得了高质量的PPG信号,成功用于心率监测。     

基于SiO2/ZnO/SiO2/SiC复合结构瑞利波谐振器设计

采用有限元法建立了ZnO/SiC,ZnO/SiO2/SiC和SiO2/ZnO/SiC这3种不同复合结构模型,仿真分析了ZnO薄膜厚度一定的情况下,不同厚度SiO2薄膜对谐振器瑞利波相速度、机电耦合系数的影响,并根据分析结果设计出了基于SiO2/ZnO/SiO2/SiC复合结构瑞利波谐振器的具体尺寸.结果表明:设计的谐振...     

基于低缺陷ZnO电子传输层的PbS量子点光电探测器研究

PbS胶体量子点因其光吸收系数高、制备成本低、沉积工艺简单、带隙可调等优点,成为备受关注的新型红外探测纳米材料。光电二极管结构的PbS量子点光电探测器通常使用高透过率、高电子迁移率的ZnO来制备N型层,以加快光生载流子的分离和提取。但是通过溶胶-凝胶法制备的ZnO薄膜在制备过程中会在薄膜中产生缺陷,限制ZnO层性能的发挥。本文通过调节ZnO前驱体溶液的浓度成功制备出缺陷更低的ZnO薄膜并应用于ZnO/PbS光电探测器件,经测试,当溶液浓度为0.7M(mol/L)时,所制备的器件表现出最佳的性能,在1 600 nm处的响应度和探测率分别为0.32A/W和3.48×10¹¹Jones,外量子效率为25%,器件的响应时间为τ_R=130μs,τ_F=20μs。这项工作为PbS量子点光电器件性能的优化提供了新的解决方案。     

Fabrication of ultraviolet photoconductive sensor using a novel aluminium-doped zinc oxide nanorod-nanoflake network thin film prepared via ultrasonic-assisted sol-gel and immersion methods

Unique and novel thin films with aluminium (Al)-doped zinc oxide (ZnO) nanostructures consisting of nanorod-nanoflake networks were prepared for metal-semiconductor-metal (MSM)-type ultraviolet (UV) photoconductive sensor applications. These nanostructures were grown on a glass substrate coated with a seed layer using a combination of ultrasonic-assisted sol-gel and immersion methods. The synthesised ZnO nanorods had diameters varying from 10 to 40 nm. Very thin nanoflake structures were grown vertically and horizontally on top of the nanorod array. The thin film had good ZnO crystallinity with a root mean square roughness of approximately 13.59 nm. The photocurrent properties for the Al-doped ZnO nanorod-nanoflake thin films were more than 1.5 times greater than those of the seed layer when the sensor was illuminated with 365 nm UV light at a density of 5 mA/cm². The responsivity of the device was found to be dependent on the bias voltage. We found that similar photocurrent curves were produced over eight cycles, which indicated that the UV sensing capability of the fabricated sensor was highly reproducible. Our results provide a new approach for utilising the novel structure of Al-doped ZnO thin films with a nanorod-nanoflake network for UV sensor applications. To the best of our knowledge, UV photoconductive sensors using Al-doped ZnO thin films with a nanorod-nanoflake network have not yet been reported.     

Performance improvements of IGZO and ZnO thin‐film transistors by laser‐irradiation treatment

Abstract— Zinc oxide (ZnO) and indium gallium zinc oxide (IGZO) thin films subjected to laser irradiation were investigated. The structural, optical, and electrical properties of the as‐deposited and laser‐irradiated films at different laser dosages were studied. The crystallinity of the structure increased after laser treatment. The transmittances without/with laser irradiation had a net rise of 85–92% and 80–95% (@550 nm) for 250‐nm ZnO and IGZO films, respectively. Thin‐film transistors (TFTs) with ZnO and IGZO as the active layer were fabricated. The as‐deposited ZnO/IGZO TFT devices had a field‐effect mobility of 0.19 and 1.3 cm²/V‐sec, respectively. The electrical characteristics increased by more than 2.8 times for ZnO and by 5.8 times for IGZO with laser treatment. The field‐effect mobility of ZnO and IGZO are 0.5 and 7.65 cm²/V‐sec.     

Laser‐irradiated zinc oxide thin‐film transistors fabricated by solution processing

Abstract— This study investigates the effects of subjecting zinc oxide (ZnO) thin films to laser irradiation. The optical, structural, and electrical properties of the as‐deposited and laser‐irradiated films at different laser energies were studied. The transmittances without/with laser irradiation showed a net increase from 85 to 92% (@550 nm) for 250‐nm ZnO films, indicating an improvement in sample crystal linity. In addition, laser treatment decreased the ZnO band gap. Composition structure analysis shows that the crystallinity increased when the laser energy increased. Thin‐film transistors (TFTs) with a ZnO active layer were fabricated. The mobility of as‐deposited ZnO TFT devices (0.19 cm²/V‐sec) increased more than 2.5 times for ZnO of unirradiated laser treatment (0.49 cm²/V‐sec).     

Field emission properties of amorphous GaN ultrathin films fabricated by pulsed laser deposition

Amorphous gallium nitride (a-GaN) films with thicknesses of 5 and 300 nm are deposited on n-Si (100) substrates by pulsed laser deposition (PLD), and their field emission (FE) properties are studied. It shows that compared with thicker (300 nm) a-GaN film, better FE performance is obtained on ultrathin (5 nm) a-GaN film with a threshold field of 0.78 V/μm, which is the lowest value ever reported. Furthermore, the current density reaches 42 mA/cm2 when the applied field is 3.72 V/μm. These experimental resul...     

Influence of sputtering power on properties of ZnO thin films fabricated by RF sputtering in room temperature

High mobility and c-axis orientated ZnO thin films were deposited on glass substrates using RF sputtering method at room temperature.Structural properties of ZnO thin films were investigated by X-ray diffraction (XRD).Surface morphology and roughness were studied with scanning electron microscopy (SEM) and atomic force microscopy (AFM).Electrical properties were measured at room temperature using a Hall effect measurement system.The influence of sputtering power on characteristics of ZnO thin films is studied.The results indicate that the sputtering powers have great influence on the crystal quality and mobility of ZnO thin films.By using optimized sputtering conditions,high crystal quality ZnO thin films with Hall mobility of 34 cm 2 /V·s at room temperature were obtained.     

Fabrication and characteristics of ZnO thin films deposited by RF sputtering on plastic substrates for flexible display

ZnO thin films were successfully grown on flexible plastic substrates using radio-frequency mag-netron sputtering method at room temperature.The effects of the sputtering power on the quality of the ZnO films have been investigated.The results show that thin films were polycrystalline,with wurtzite structure and a strong preferred c-axis orientation (002).The root-mean-square (rms) surface roughness of the ZnO thin films is 22.1 nm.The ZnO thin films fabricated by sputtering with 70 W sputtering power have a high mobility of 34.33 cm 2 /V·s.The ZnO films are shown to be compatible with flexible display on plastic substrates.     

Acetylene sensor based on Pt/ZnO thick films as prepared by flame spray pyrolysis

ZnO nanoparticles loaded with 0.2-2.0 at.% Pt have been successfully produced in a single step by flame spray pyrolysis (FSP) technique using zinc naphthenate and platinum(II) acetylacetonate, as precursors dissolved in xylene and their acetylene sensing characteristics have been investigated. The particle properties were analyzed by XRD, BET, TEM, SEM and EDS. Under the 5/5 (precursor/oxygen) flame condition, ZnO nanoparticles and nanorods were observed. The crystallite sizes of ZnO spherical and hexagonal particles were found to be ranging from 5 to 20 nm while ZnO nanorods were seen to be 5-20 nm in width and 20-40 nm in length. In addition, very fine Pt nanoparticles with diameter of ∼1 nm were uniformly deposited on the surface of ZnO particles. From gas-sensing characterization, acetylene sensing characteristics of ZnO nanoparticles is significantly improved as Pt content increased from 0 to 2  at.%. The 2 at.% Pt loaded ZnO sensing film showed an optimum C₂H₂ response of ∼836 at 1% acetylene concentration and 300 °C operating temperature. A low detection limit of 50 ppm was obtained at 300 °C operating temperature. In addition, Pt loaded ZnO sensing films exhibited good selectivity towards hydrogen, methane and carbon monoxide.     

SnO2基薄膜气体传感器制作与敏感性测试

在现有的粉末烧结型SnO2基气敏传感器基础上研制了薄膜型SnO2基气体传感器,以抛光的丽热石英玻璃为基片,真空磁控溅射50～70nm厚度的SnO2薄膜,在SnO2薄膜上分别溅射不连续的ZnO、Al2O3、CeO2、InO2等薄膜,传感器背面溅射30μm的Ni80Cr20电阳合金作为传感器加热电阻,用薄膜热电偶测量传感器工作温度。测试了不同的复合瞑对传感器灵敏度和选择性的影响,并对传感器的吸附与解吸速度进行了测试,薄嗅传感器达到相同灵敏度所需的工作温度比粉末烧结型传感器下降100～150℃,吸附解吸速度比粉末烧结型快。